JP6487195B2 - 半導体光集積素子、半導体光集積素子の製造方法及び光モジュール - Google Patents

半導体光集積素子、半導体光集積素子の製造方法及び光モジュール Download PDF

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JP6487195B2
JP6487195B2 JP2014248981A JP2014248981A JP6487195B2 JP 6487195 B2 JP6487195 B2 JP 6487195B2 JP 2014248981 A JP2014248981 A JP 2014248981A JP 2014248981 A JP2014248981 A JP 2014248981A JP 6487195 B2 JP6487195 B2 JP 6487195B2
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semiconductor optical
semiconductor
integrated device
optical integrated
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JP2016111263A5 (https=
JP2016111263A (ja
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光一朗 足立
光一朗 足立
鈴木　崇功
崇功 鈴木
康 佐久間
康 佐久間
和彦 直江
和彦 直江
慧 中西
慧 中西
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日本オクラロ株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0267—Integrated focusing lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2014248981A 2014-12-09 2014-12-09 半導体光集積素子、半導体光集積素子の製造方法及び光モジュール Active JP6487195B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014248981A JP6487195B2 (ja) 2014-12-09 2014-12-09 半導体光集積素子、半導体光集積素子の製造方法及び光モジュール
US14/961,984 US9780530B2 (en) 2014-12-09 2015-12-08 Semiconductor integrated optical device, manufacturing method thereof and optical module

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Application Number Priority Date Filing Date Title
JP2014248981A JP6487195B2 (ja) 2014-12-09 2014-12-09 半導体光集積素子、半導体光集積素子の製造方法及び光モジュール

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JP2016111263A JP2016111263A (ja) 2016-06-20
JP2016111263A5 JP2016111263A5 (https=) 2017-09-21
JP6487195B2 true JP6487195B2 (ja) 2019-03-20

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JP (1) JP6487195B2 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
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US10063032B2 (en) * 2016-03-06 2018-08-28 Finisar Corporation Distributed reflector laser
DE102016106495A1 (de) * 2016-04-08 2017-10-12 Osram Opto Semiconductors Gmbh Halbleiterlaser
JP6388007B2 (ja) * 2016-08-08 2018-09-12 三菱電機株式会社 光デバイスの製造方法
JP7046484B2 (ja) * 2016-11-30 2022-04-04 日本ルメンタム株式会社 アレイ半導体光素子、光送信モジュール、及び光モジュール、並びに、それらの製造方法
DE102017100997A1 (de) * 2017-01-19 2018-07-19 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers
CN207884067U (zh) * 2017-10-25 2018-09-18 中国科学院福建物质结构研究所 一种激光二极管与背光探测器集成芯片
JP2020174140A (ja) * 2019-04-11 2020-10-22 住友電気工業株式会社 半導体集積光デバイス、半導体集積光デバイスを作製する方法
FR3095903B1 (fr) * 2019-05-09 2022-12-09 Commissariat Energie Atomique Laser monomode hybride III-V sur silicium de fabrication simplifiée
CN110824721B (zh) * 2019-09-24 2021-11-23 杭州驭光光电科技有限公司 衍射光学组件的设计方法及衍射光学组件
US11233375B2 (en) 2019-10-01 2022-01-25 Ii-Vi Delaware, Inc. Two-kappa DBR laser
US11251585B2 (en) 2019-10-01 2022-02-15 Ii-Vi Delaware, Inc. DFB with weak optical feedback
US11784464B2 (en) 2020-09-30 2023-10-10 Ii-Vi Delaware, Inc. Directly modulated laser
US20240047939A1 (en) * 2022-08-04 2024-02-08 Ii-Vi Delaware, Inc. Bandwith enhanced dfb+r lite laser
CN115621843B (zh) * 2022-11-07 2026-03-10 江苏索尔思通信科技有限公司 一种半导体激光器及其制备方法
JP2024113981A (ja) 2023-02-10 2024-08-23 富士通オプティカルコンポーネンツ株式会社 光デバイス、光モジュール及び光トランシーバ
CN119780472B (zh) * 2024-12-26 2026-02-10 南京邮电大学 一种基于量子限制斯塔克效应外差式光机电微腔加速度计及其制备方法

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Publication number Priority date Publication date Assignee Title
JP2008277445A (ja) 2007-04-26 2008-11-13 Opnext Japan Inc 半導体レーザおよび光モジュール
JP5047704B2 (ja) 2007-06-20 2012-10-10 日本オクラロ株式会社 光集積素子
JP5163355B2 (ja) 2008-08-08 2013-03-13 富士通株式会社 半導体レーザ装置
WO2010111689A2 (en) * 2009-03-26 2010-09-30 Kaiam Corp. A semiconductor laser device and circuit for and method of driving same
JP5691216B2 (ja) * 2010-03-29 2015-04-01 富士通株式会社 光半導体集積素子及びその製造方法
JP6084428B2 (ja) * 2012-10-18 2017-02-22 日本オクラロ株式会社 半導体光集積素子及びその製造方法
US9048618B2 (en) * 2013-03-12 2015-06-02 Finisar Corporation Short gain cavity distributed bragg reflector laser

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US9780530B2 (en) 2017-10-03
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