JP6485019B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP6485019B2
JP6485019B2 JP2014244157A JP2014244157A JP6485019B2 JP 6485019 B2 JP6485019 B2 JP 6485019B2 JP 2014244157 A JP2014244157 A JP 2014244157A JP 2014244157 A JP2014244157 A JP 2014244157A JP 6485019 B2 JP6485019 B2 JP 6485019B2
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electrode
semiconductor layer
insulating film
light emitting
type semiconductor
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Japanese (ja)
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JP2015135951A5 (enExample
JP2015135951A (ja
Inventor
佐野　雅彦
雅彦 佐野
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Nichia Corp
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Nichia Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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JP2014244157A 2013-12-19 2014-12-02 半導体発光素子 Active JP6485019B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014244157A JP6485019B2 (ja) 2013-12-19 2014-12-02 半導体発光素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013262438 2013-12-19
JP2013262438 2013-12-19
JP2014244157A JP6485019B2 (ja) 2013-12-19 2014-12-02 半導体発光素子

Related Child Applications (1)

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JP2019028016A Division JP6870695B2 (ja) 2013-12-19 2019-02-20 半導体発光素子

Publications (3)

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JP2015135951A JP2015135951A (ja) 2015-07-27
JP2015135951A5 JP2015135951A5 (enExample) 2018-01-18
JP6485019B2 true JP6485019B2 (ja) 2019-03-20

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JP2014244157A Active JP6485019B2 (ja) 2013-12-19 2014-12-02 半導体発光素子
JP2019028016A Active JP6870695B2 (ja) 2013-12-19 2019-02-20 半導体発光素子

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Country Status (7)

Country Link
US (2) US9123865B2 (enExample)
EP (1) EP2887408B1 (enExample)
JP (2) JP6485019B2 (enExample)
KR (1) KR102299959B1 (enExample)
CN (1) CN104733599B (enExample)
AU (1) AU2014277727B2 (enExample)
TW (1) TWI649898B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
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US9847457B2 (en) * 2013-07-29 2017-12-19 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and LED module having the same
KR102409964B1 (ko) * 2015-08-04 2022-06-16 삼성전자주식회사 반도체 발광소자 및 제조방법
KR20170018201A (ko) * 2015-08-06 2017-02-16 삼성전자주식회사 반도체 발광소자 및 제조방법
US9530934B1 (en) * 2015-12-22 2016-12-27 Epistar Corporation Light-emitting device
CN105742418A (zh) * 2016-03-18 2016-07-06 华灿光电股份有限公司 一种发光二极管芯片及其制作方法
DE102016112587A1 (de) * 2016-07-08 2018-01-11 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
KR102707425B1 (ko) * 2017-01-06 2024-09-20 서울바이오시스 주식회사 전류 차단층을 가지는 발광 소자
TWI790984B (zh) * 2017-01-26 2023-01-21 晶元光電股份有限公司 發光元件
US11024770B2 (en) * 2017-09-25 2021-06-01 Nichia Corporation Light emitting element and light emitting device
JP7054430B2 (ja) * 2018-04-26 2022-04-14 日亜化学工業株式会社 発光素子
CN110416381B (zh) * 2018-04-26 2025-04-25 日亚化学工业株式会社 发光元件
DE102018119438A1 (de) * 2018-08-09 2020-02-13 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip, optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils
DE102018124341B4 (de) * 2018-10-02 2024-05-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit vergrößerter aktiver Zone und Verfahren zur Herstellung
CN109817781A (zh) * 2019-01-31 2019-05-28 深圳第三代半导体研究院 一种正装集成单元发光二极管
TWD219684S (zh) * 2021-07-09 2022-07-01 晶元光電股份有限公司 發光二極體之部分
JP2025099960A (ja) * 2023-12-22 2025-07-03 セイコーエプソン株式会社 発光装置、電子機器、および発光装置の製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100552997C (zh) 2002-08-01 2009-10-21 日亚化学工业株式会社 半导体发光元件及其制造方法、使用此的发光装置
TWI220578B (en) * 2003-09-16 2004-08-21 Opto Tech Corp Light-emitting device capable of increasing light-emitting active region
JP4449405B2 (ja) * 2003-10-20 2010-04-14 日亜化学工業株式会社 窒化物半導体発光素子およびその製造方法
JP4899825B2 (ja) * 2006-11-28 2012-03-21 日亜化学工業株式会社 半導体発光素子、発光装置
CN102779918B (zh) 2007-02-01 2015-09-02 日亚化学工业株式会社 半导体发光元件
JP5130730B2 (ja) 2007-02-01 2013-01-30 日亜化学工業株式会社 半導体発光素子
JP4882792B2 (ja) * 2007-02-25 2012-02-22 日亜化学工業株式会社 半導体発光素子
DE102007022947B4 (de) * 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
KR101020910B1 (ko) * 2008-12-24 2011-03-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP5713650B2 (ja) * 2009-12-08 2015-05-07 Ｄｏｗａエレクトロニクス株式会社 発光素子およびその製造方法
TWI433357B (zh) * 2010-08-26 2014-04-01 Huga Optotech Inc 高亮度發光二極體結構
JP5628615B2 (ja) * 2010-09-27 2014-11-19 スタンレー電気株式会社 半導体発光装置およびその製造方法
TW201216517A (en) * 2010-10-06 2012-04-16 Chi Mei Lighting Tech Corp Light-emitting diode device and manufacturing method thereof
CN105742447B (zh) * 2010-11-18 2019-03-26 首尔伟傲世有限公司 具有电极焊盘的发光二极管
JP5605189B2 (ja) * 2010-11-26 2014-10-15 豊田合成株式会社 半導体発光素子
JP2012124306A (ja) * 2010-12-08 2012-06-28 Toyoda Gosei Co Ltd 半導体発光素子
JP2012204373A (ja) * 2011-03-23 2012-10-22 Toyoda Gosei Co Ltd 半導体発光素子
JP5541261B2 (ja) * 2011-03-23 2014-07-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
KR101883842B1 (ko) * 2011-12-26 2018-08-01 엘지이노텍 주식회사 발광소자 및 이를 포함하는 조명시스템
TWI479694B (zh) * 2012-01-11 2015-04-01 Formosa Epitaxy Inc Light emitting diode wafers

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Publication number Publication date
US9123865B2 (en) 2015-09-01
EP2887408B1 (en) 2019-11-06
KR20150072344A (ko) 2015-06-29
CN104733599B (zh) 2018-12-28
TW201528548A (zh) 2015-07-16
CN104733599A (zh) 2015-06-24
JP2019075591A (ja) 2019-05-16
US20150179890A1 (en) 2015-06-25
EP2887408A2 (en) 2015-06-24
AU2014277727A1 (en) 2015-07-09
US9293658B2 (en) 2016-03-22
US20150325751A1 (en) 2015-11-12
KR102299959B1 (ko) 2021-09-09
EP2887408A3 (en) 2015-11-04
TWI649898B (zh) 2019-02-01
JP2015135951A (ja) 2015-07-27
AU2014277727B2 (en) 2019-04-04
JP6870695B2 (ja) 2021-05-12

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