AU2014277727B2 - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element Download PDF

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Publication number
AU2014277727B2
AU2014277727B2 AU2014277727A AU2014277727A AU2014277727B2 AU 2014277727 B2 AU2014277727 B2 AU 2014277727B2 AU 2014277727 A AU2014277727 A AU 2014277727A AU 2014277727 A AU2014277727 A AU 2014277727A AU 2014277727 B2 AU2014277727 B2 AU 2014277727B2
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AU
Australia
Prior art keywords
electrode
semiconductor layer
type semiconductor
light emitting
emitting element
Prior art date
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AU2014277727A
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English (en)
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AU2014277727A1 (en
Inventor
Masahiko Sano
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Nichia Corp
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Nichia Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Led Devices (AREA)
AU2014277727A 2013-12-19 2014-12-17 Semiconductor light emitting element Active AU2014277727B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-262438 2013-12-19
JP2013262438 2013-12-19

Publications (2)

Publication Number Publication Date
AU2014277727A1 AU2014277727A1 (en) 2015-07-09
AU2014277727B2 true AU2014277727B2 (en) 2019-04-04

Family

ID=52146178

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2014277727A Active AU2014277727B2 (en) 2013-12-19 2014-12-17 Semiconductor light emitting element

Country Status (7)

Country Link
US (2) US9123865B2 (enExample)
EP (1) EP2887408B1 (enExample)
JP (2) JP6485019B2 (enExample)
KR (1) KR102299959B1 (enExample)
CN (1) CN104733599B (enExample)
AU (1) AU2014277727B2 (enExample)
TW (1) TWI649898B (enExample)

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US9847457B2 (en) * 2013-07-29 2017-12-19 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and LED module having the same
KR102409964B1 (ko) * 2015-08-04 2022-06-16 삼성전자주식회사 반도체 발광소자 및 제조방법
KR20170018201A (ko) * 2015-08-06 2017-02-16 삼성전자주식회사 반도체 발광소자 및 제조방법
US9530934B1 (en) * 2015-12-22 2016-12-27 Epistar Corporation Light-emitting device
CN105742418A (zh) * 2016-03-18 2016-07-06 华灿光电股份有限公司 一种发光二极管芯片及其制作方法
DE102016112587A1 (de) * 2016-07-08 2018-01-11 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
KR102707425B1 (ko) * 2017-01-06 2024-09-20 서울바이오시스 주식회사 전류 차단층을 가지는 발광 소자
TWI790984B (zh) * 2017-01-26 2023-01-21 晶元光電股份有限公司 發光元件
US11024770B2 (en) * 2017-09-25 2021-06-01 Nichia Corporation Light emitting element and light emitting device
JP7054430B2 (ja) * 2018-04-26 2022-04-14 日亜化学工業株式会社 発光素子
CN110416381B (zh) * 2018-04-26 2025-04-25 日亚化学工业株式会社 发光元件
DE102018119438A1 (de) * 2018-08-09 2020-02-13 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip, optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils
DE102018124341B4 (de) * 2018-10-02 2024-05-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit vergrößerter aktiver Zone und Verfahren zur Herstellung
CN111048639B (zh) * 2019-01-31 2022-06-24 深圳第三代半导体研究院 一种正装集成单元发光二极管
TWD219684S (zh) * 2021-07-09 2022-07-01 晶元光電股份有限公司 發光二極體之部分
JP2025099960A (ja) * 2023-12-22 2025-07-03 セイコーエプソン株式会社 発光装置、電子機器、および発光装置の製造方法
TWD236317S (zh) * 2024-05-08 2025-02-11 晶元光電股份有限公司 新竹市東區新竹科學工業園區力行路21號 (中華民國) 發光二極體之部份

Citations (3)

* Cited by examiner, † Cited by third party
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EP2207211A1 (en) * 2008-12-24 2010-07-14 LG Innotek Co., Ltd. Electrode structure for a semiconductor light emitting diode
US20120049234A1 (en) * 2010-08-26 2012-03-01 Huga Optotech Inc. High-brightness light emitting diode
US20130175572A1 (en) * 2012-01-11 2013-07-11 Formosa Epitaxy Incorporation Light-emitting diode chip

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EP2290715B1 (en) 2002-08-01 2019-01-23 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
TWI220578B (en) * 2003-09-16 2004-08-21 Opto Tech Corp Light-emitting device capable of increasing light-emitting active region
JP4449405B2 (ja) * 2003-10-20 2010-04-14 日亜化学工業株式会社 窒化物半導体発光素子およびその製造方法
JP4899825B2 (ja) * 2006-11-28 2012-03-21 日亜化学工業株式会社 半導体発光素子、発光装置
CN102779918B (zh) 2007-02-01 2015-09-02 日亚化学工业株式会社 半导体发光元件
JP5130730B2 (ja) 2007-02-01 2013-01-30 日亜化学工業株式会社 半導体発光素子
JP4882792B2 (ja) * 2007-02-25 2012-02-22 日亜化学工業株式会社 半導体発光素子
DE102007022947B4 (de) * 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
JP5713650B2 (ja) * 2009-12-08 2015-05-07 Ｄｏｗａエレクトロニクス株式会社 発光素子およびその製造方法
JP5628615B2 (ja) * 2010-09-27 2014-11-19 スタンレー電気株式会社 半導体発光装置およびその製造方法
TW201216517A (en) * 2010-10-06 2012-04-16 Chi Mei Lighting Tech Corp Light-emitting diode device and manufacturing method thereof
JP2014500624A (ja) * 2010-11-18 2014-01-09 ソウル バイオシス カンパニー リミテッド 電極パッドを有する発光ダイオードチップ
JP5605189B2 (ja) * 2010-11-26 2014-10-15 豊田合成株式会社 半導体発光素子
JP2012124306A (ja) * 2010-12-08 2012-06-28 Toyoda Gosei Co Ltd 半導体発光素子
JP5541261B2 (ja) * 2011-03-23 2014-07-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
JP2012204373A (ja) * 2011-03-23 2012-10-22 Toyoda Gosei Co Ltd 半導体発光素子
KR101883842B1 (ko) * 2011-12-26 2018-08-01 엘지이노텍 주식회사 발광소자 및 이를 포함하는 조명시스템

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
EP2207211A1 (en) * 2008-12-24 2010-07-14 LG Innotek Co., Ltd. Electrode structure for a semiconductor light emitting diode
US20120049234A1 (en) * 2010-08-26 2012-03-01 Huga Optotech Inc. High-brightness light emitting diode
US20130175572A1 (en) * 2012-01-11 2013-07-11 Formosa Epitaxy Incorporation Light-emitting diode chip

Also Published As

Publication number Publication date
US20150325751A1 (en) 2015-11-12
JP2015135951A (ja) 2015-07-27
CN104733599A (zh) 2015-06-24
KR102299959B1 (ko) 2021-09-09
TWI649898B (zh) 2019-02-01
JP6485019B2 (ja) 2019-03-20
US9293658B2 (en) 2016-03-22
JP2019075591A (ja) 2019-05-16
EP2887408A2 (en) 2015-06-24
JP6870695B2 (ja) 2021-05-12
AU2014277727A1 (en) 2015-07-09
US20150179890A1 (en) 2015-06-25
KR20150072344A (ko) 2015-06-29
TW201528548A (zh) 2015-07-16
EP2887408B1 (en) 2019-11-06
EP2887408A3 (en) 2015-11-04
CN104733599B (zh) 2018-12-28
US9123865B2 (en) 2015-09-01

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