JP6480060B2 - ワイドバンドギャップ半導体デバイスのためのオーバーモールド・パッケージング - Google Patents
ワイドバンドギャップ半導体デバイスのためのオーバーモールド・パッケージング Download PDFInfo
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- JP6480060B2 JP6480060B2 JP2018083686A JP2018083686A JP6480060B2 JP 6480060 B2 JP6480060 B2 JP 6480060B2 JP 2018083686 A JP2018083686 A JP 2018083686A JP 2018083686 A JP2018083686 A JP 2018083686A JP 6480060 B2 JP6480060 B2 JP 6480060B2
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 15
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Description
28 ワイドバンドギャップ半導体デバイス
30 オーバーモールド
32 入力/出力ピン
34 リードフレーム
38 ダイアタッチ材料
40 ボンドワイヤ
Claims (10)
- リードフレームと、
約40W/m−Kよりも大きいバルク熱伝導率と約20GPa未満の曲げ弾性率とを有するダイアタッチ材料を用いて前記リードフレームに取り付けられたワイドバンドギャップ半導体デバイスと、
前記リードフレームの周りに少なくとも部分的にモールドされかつ前記ワイドバンドギャップ半導体デバイスを実質的に取り囲む、約135℃よりも高いガラス転移温度と約0.5%未満の吸湿率とを有するオーバーモールドと、
を備え、
前記オーバーモールドは、前記ガラス転移温度未満の温度で約18ppm/℃未満の熱膨張係数を有し、
前記ワイドバンドギャップ半導体デバイスの反対側の前記リードフレームの底面は、前記オーバーモールドを通って露出している、トランジスタパッケージ。 - 前記ダイアタッチ材料の第1の曲げ弾性率が、前記オーバーモールドの第2の曲げ弾性率よりも小さい、請求項1に記載のトランジスタパッケージ。
- 前記オーバーモールドの曲げ弾性率が20GPa未満であり、前記ダイアタッチ材料の曲げ弾性率が20GPa未満である、請求項1に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスが2mm×2mm未満の面積を有し、前記ダイアタッチ材料の曲げ弾性率が約10GPa未満である、請求項1に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、ワイドバンドギャップ・トランジスタを含み、
前記トランジスタパッケージは、無線周波数入力と前記ワイドバンドギャップ・トランジスタのゲートとの間、又は無線周波数出力と前記ワイドバンドギャップ・トランジスタのドレインとの間に接続される、帯域幅制限整合回路網を含む、請求項1に記載のトランジスタパッケージ。 - 前記ワイドバンドギャップ・トランジスタと前記帯域幅制限整合回路網とは、単一のモノリシック集積回路の一部として一緒に形成される、請求項5に記載のトランジスタパッケージ。
- 前記ワイドバンドギャップ半導体デバイスは、所定の周波数帯域において54dBmを超えるピーク出力電力を有し、
前記トランジスタパッケージは、前記所定の周波数帯域の300MHz内で少なくとも7.5dBの利得ロールオフを提供する少なくとも1つの帯域幅制限整合回路網をさらに含む、請求項1に記載のトランジスタパッケージ。 - 前記ワイドバンドギャップ半導体デバイスは、窒化ガリウム(GaN)トランジスタであり、
前記トランジスタパッケージは、前記トランジスタパッケージが所定の周波数帯域の200MHz内で0.5dBより大きい利得ロールオフを有するように、所定の周波数帯域の外側で前記GaNトランジスタの利得応答を制限するように構成された少なくとも1つの帯域幅制限整合回路網をさらに含み、 240Wより大きいピーク電力レベルで所定の周波数帯域内で1.0dB未満の信号損失を提供する、請求項1に記載のトランジスタパッケージ。 - 前記ワイドバンドギャップ半導体デバイスは、約3.8GHzまでの周波数で動作するときに、約150Wより大きいピーク出力電力を有するトランジスタである、請求項1に記載のトランジスタパッケージ。
- 前記リードフレームは、中央領域と、前記中央領域から横方向に延びる第1及び第2のアームを有し、前記オーバーモールドは、前記リードフレームの上面並びに前記リードフレームの前記第1及び第2のアームの下にモールドされる、請求項1に記載のトランジスタパッケージ。
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