JP6465792B2 - 高電圧ドライバ - Google Patents
高電圧ドライバ Download PDFInfo
- Publication number
- JP6465792B2 JP6465792B2 JP2015504676A JP2015504676A JP6465792B2 JP 6465792 B2 JP6465792 B2 JP 6465792B2 JP 2015504676 A JP2015504676 A JP 2015504676A JP 2015504676 A JP2015504676 A JP 2015504676A JP 6465792 B2 JP6465792 B2 JP 6465792B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- low voltage
- circuit
- signal
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005669 field effect Effects 0.000 claims description 25
- 230000007704 transition Effects 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
- H03K2017/307—Modifications for providing a predetermined threshold before switching circuits simulating a diode, e.g. threshold zero
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Landscapes
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/438,927 US9344077B2 (en) | 2012-04-04 | 2012-04-04 | High voltage driver |
| US13/438,927 | 2012-04-04 | ||
| PCT/US2013/034949 WO2013151998A1 (en) | 2012-04-04 | 2013-04-02 | High voltage driver |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015520537A JP2015520537A (ja) | 2015-07-16 |
| JP2015520537A5 JP2015520537A5 (enExample) | 2016-05-26 |
| JP6465792B2 true JP6465792B2 (ja) | 2019-02-06 |
Family
ID=48093121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015504676A Active JP6465792B2 (ja) | 2012-04-04 | 2013-04-02 | 高電圧ドライバ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9344077B2 (enExample) |
| JP (1) | JP6465792B2 (enExample) |
| DE (1) | DE112013001888B4 (enExample) |
| WO (1) | WO2013151998A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9660642B2 (en) * | 2015-07-07 | 2017-05-23 | Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd. | Expansion control circuit |
| US20190326900A1 (en) * | 2018-04-24 | 2019-10-24 | Infineon Technologies Ag | Driver circuit for a device circuit |
| JP7612567B2 (ja) * | 2018-09-05 | 2025-01-14 | エフィシェント・パワー・コンバージョン・コーポレイション | GaNを基にした調節可能な電流ドライバ回路 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07249740A (ja) * | 1994-03-09 | 1995-09-26 | Mitsubishi Electric Corp | 昇圧回路およびこれを利用した電圧駆動型半導体素子の駆動回路 |
| DE4446327A1 (de) | 1994-12-23 | 1996-07-04 | Siemens Ag | Schaltungsanordnung zum Ansteuern eines Leistungs-MOSFET |
| DE19655181C2 (de) | 1995-04-11 | 2001-05-03 | Int Rectifier Corp | Spannungsseitiger Schalterkreis |
| GB9525638D0 (en) * | 1995-12-15 | 1996-02-14 | Philips Electronics Nv | Matrix display devices |
| EP0887931A1 (en) * | 1997-06-24 | 1998-12-30 | STMicroelectronics S.r.l. | Protection circuit for controlling the gate voltage of a high voltage LDMOS transistor |
| US6100868A (en) * | 1997-09-15 | 2000-08-08 | Silicon Image, Inc. | High density column drivers for an active matrix display |
| ATE354268T1 (de) * | 1998-12-17 | 2007-03-15 | Biotage Ab | Mikrowellenvorrichtung und verfahren zum durchführen chemischer reaktionen |
| DE19950023A1 (de) * | 1999-10-09 | 2001-04-12 | Bosch Gmbh Robert | Ansteuervorrichtung für einen Schalter zum elektronischen Schalten eines Verbrauchers |
| GB0109971D0 (en) * | 2001-04-24 | 2001-06-13 | Harvey Geoffrey P | Electronic logic driver circuit utilizing mutual induction between coupled inductors to drive capacitive loads with low power consumption |
| US6661276B1 (en) | 2002-07-29 | 2003-12-09 | Lovoltech Inc. | MOSFET driver matching circuit for an enhancement mode JFET |
| US6972973B2 (en) * | 2003-01-09 | 2005-12-06 | Denso Corporation | Voltage booster having noise reducing structure |
| JP3675457B2 (ja) * | 2003-06-19 | 2005-07-27 | セイコーエプソン株式会社 | 昇圧クロック生成回路及び半導体装置 |
| TWI224869B (en) | 2004-03-25 | 2004-12-01 | Richtek Techohnology Corp | Apparatus for driving depletion type junction field effect transistor |
| TW200642246A (en) * | 2005-05-20 | 2006-12-01 | Richtek Technology Corp | DC buck/boost converter |
| US8508078B2 (en) * | 2009-06-30 | 2013-08-13 | Decicon, Inc. | Power switch with reverse current blocking capability |
| JP2011101209A (ja) * | 2009-11-06 | 2011-05-19 | Toyota Motor Corp | レベルシフタ誤動作防止回路 |
| JP5263317B2 (ja) | 2011-02-15 | 2013-08-14 | 株式会社デンソー | 半導体スイッチング素子の駆動回路 |
| JP2013013044A (ja) | 2011-05-31 | 2013-01-17 | Sanken Electric Co Ltd | ゲートドライブ回路 |
| JP5587253B2 (ja) * | 2011-06-27 | 2014-09-10 | ウィンボンド エレクトロニクス コーポレーション | 昇圧回路 |
| JP2013099123A (ja) | 2011-11-01 | 2013-05-20 | Sanken Electric Co Ltd | ゲート駆動回路 |
-
2012
- 2012-04-04 US US13/438,927 patent/US9344077B2/en active Active
-
2013
- 2013-04-02 JP JP2015504676A patent/JP6465792B2/ja active Active
- 2013-04-02 WO PCT/US2013/034949 patent/WO2013151998A1/en not_active Ceased
- 2013-04-02 DE DE112013001888.8T patent/DE112013001888B4/de active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20130265084A1 (en) | 2013-10-10 |
| DE112013001888B4 (de) | 2020-08-20 |
| JP2015520537A (ja) | 2015-07-16 |
| WO2013151998A1 (en) | 2013-10-10 |
| DE112013001888T5 (de) | 2014-12-18 |
| US9344077B2 (en) | 2016-05-17 |
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