JP6464215B2 - 半導体ナノ粒子およびその製造方法 - Google Patents

半導体ナノ粒子およびその製造方法 Download PDF

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JP6464215B2
JP6464215B2 JP2017037487A JP2017037487A JP6464215B2 JP 6464215 B2 JP6464215 B2 JP 6464215B2 JP 2017037487 A JP2017037487 A JP 2017037487A JP 2017037487 A JP2017037487 A JP 2017037487A JP 6464215 B2 JP6464215 B2 JP 6464215B2
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semiconductor nanoparticles
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JP2018044142A (ja
Inventor
桑畑 進
進 桑畑
太郎 上松
太郎 上松
知卓 輪島
知卓 輪島
鳥本 司
司 鳥本
達矢 亀山
達矢 亀山
大祐 小谷松
大祐 小谷松
健太 仁木
健太 仁木
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Nichia Corp
Nagoya University NUC
Tokai National Higher Education and Research System NUC
University of Osaka NUC
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Nichia Corp
Nagoya University NUC
Osaka University NUC
Tokai National Higher Education and Research System NUC
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Priority to US15/459,767 priority Critical patent/US10563122B2/en
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Priority to US16/732,877 priority patent/US11162024B2/en
Priority to US17/449,255 priority patent/US11788003B2/en
Priority to US18/464,517 priority patent/US12264273B2/en
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JP2017037487A 2016-03-18 2017-02-28 半導体ナノ粒子およびその製造方法 Active JP6464215B2 (ja)

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US15/459,767 US10563122B2 (en) 2016-03-18 2017-03-15 Semiconductor nanoparticles and method of producing semiconductor nanoparticles
US16/732,877 US11162024B2 (en) 2016-03-18 2020-01-02 Semiconductor nanoparticles and method of producing semiconductor nanoparticles
US17/449,255 US11788003B2 (en) 2016-03-18 2021-09-28 Semiconductor nanoparticles and method of producing semiconductor nanoparticles
US18/464,517 US12264273B2 (en) 2016-03-18 2023-09-11 Semiconductor nanoparticles and method of producing semiconductor nanoparticles

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JP2016055299 2016-03-18
JP2016055299 2016-03-18
JP2016177631 2016-09-12
JP2016177631 2016-09-12

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JP2022002071A Active JP7314327B2 (ja) 2016-03-18 2022-01-11 半導体ナノ粒子およびその製造方法
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US11643595B2 (en) 2021-06-21 2023-05-09 Nichia Corporation Wavelength conversion member, light-emitting device, and image display device
US12264272B2 (en) 2021-06-21 2025-04-01 Nichia Corporation Fluorescent material composite particles, wavelength converting member, light emitting device, method for producing fluorescent material composite particles, and method for producing wavelength converting member

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12221574B2 (en) 2018-02-15 2025-02-11 Osaka University Core-shell semiconductor nanoparticles, production method thereof, and light-emitting device
JP7214707B2 (ja) 2018-02-15 2023-01-30 国立大学法人大阪大学 半導体ナノ粒子、その製造方法および発光デバイス
JP7007671B2 (ja) * 2018-06-22 2022-01-24 国立大学法人東海国立大学機構 半導体ナノ粒子、その製造方法及び発光デバイス
JP7656289B2 (ja) * 2019-02-08 2025-04-03 国立大学法人東海国立大学機構 半導体ナノ粒子及びその製造方法
WO2020257510A1 (en) * 2019-06-20 2020-12-24 Nanosys, Inc. Bright silver based quaternary nanostructures
KR102693926B1 (ko) * 2019-08-23 2024-08-12 엔에스 마테리얼스 아이엔씨. 양자점, 및, 그 제조 방법
JP7595881B2 (ja) * 2019-08-26 2024-12-09 国立大学法人東海国立大学機構 半導体ナノ粒子及びその製造方法並びに発光デバイス
JP7469891B2 (ja) * 2020-01-29 2024-04-17 日本放送協会 量子ドット発光素子及び表示装置
US12480044B2 (en) * 2020-03-09 2025-11-25 National University Corporation Tokai National Higher Education And Research System Method of producing semiconductor nanoparticles
US20230165026A1 (en) * 2020-03-09 2023-05-25 National University Corporation Tokai National Higher Education And Research System Light emitting material and method for manufacturing same
CN114058215B (zh) * 2020-08-04 2024-01-26 东友精细化工有限公司 光转换油墨组合物、利用其制造的光转换层叠基板及光转换像素基板
CN120555055A (zh) 2020-12-25 2025-08-29 凸版印刷株式会社 量子点
US12408505B2 (en) 2021-01-20 2025-09-02 Suzhou Institute Of Nano-Tech And Nano-Bionics (Sinano), Chinese Academy Of Sciences Fluorescent quantum dots as well as preparation method and use thereof
JP7693175B2 (ja) * 2021-02-25 2025-06-17 国立大学法人東海国立大学機構 AgAuS系化合物からなる半導体ナノ粒子
US12389724B2 (en) 2021-03-08 2025-08-12 National University Corporation Tokai National Higher Education And Research System Method for producing semiconductor nanoparticles and light-emitting device
US20240150649A1 (en) * 2021-03-31 2024-05-09 Sharp Kabushiki Kaisha Electroluminescent element, light emitting device, and production method for electroluminescent element
CN113403066A (zh) * 2021-04-29 2021-09-17 合肥福纳科技有限公司 制备(I-III-VI族)AgInS2量子点的方法
JP7633520B2 (ja) 2021-07-07 2025-02-20 日亜化学工業株式会社 発光装置
JP2023069198A (ja) * 2021-11-05 2023-05-18 信越化学工業株式会社 波長変換体及びそれを用いた波長変換材料
JP7269591B1 (ja) 2022-02-03 2023-05-09 国立大学法人東海国立大学機構 AgAuS系多元化合物からなる半導体ナノ粒子
DE112023001442T5 (de) 2022-03-18 2025-01-02 Nichia Corporation Wellenlängenumwandlungselement und verfahren zu seiner herstellung
KR102807530B1 (ko) * 2022-03-18 2025-05-16 삼성전자주식회사 반도체 나노입자, 및 이를 포함하는 색변환패널과 전자소자
KR20230171301A (ko) * 2022-06-13 2023-12-20 삼성에스디아이 주식회사 Ⅰ-ⅲ-ⅵ계 양자점 및 그 제조 방법
KR20240072860A (ko) * 2022-11-17 2024-05-24 덕산네오룩스 주식회사 양자점, 양자점의 제조방법 및 전자장치
KR20240072861A (ko) * 2022-11-17 2024-05-24 덕산네오룩스 주식회사 양자점, 양자점의 제조방법 및 전자장치
KR20240072859A (ko) * 2022-11-17 2024-05-24 덕산네오룩스 주식회사 양자점, 양자점의 제조방법 및 전자장치
KR20240074418A (ko) * 2022-11-21 2024-05-28 덕산네오룩스 주식회사 양자점, 양자점의 제조방법 및 전자장치
KR20240075372A (ko) * 2022-11-22 2024-05-29 덕산네오룩스 주식회사 양자점, 양자점의 제조방법, 감광성 수지 조성물, 광학필름, 전기발광다이오드 및 전자장치
JP7580090B2 (ja) * 2023-01-26 2024-11-11 国立大学法人東海国立大学機構 AgAuSe系多元化合物からなる半導体ナノ粒子
JP7521746B1 (ja) 2023-10-31 2024-07-24 国立大学法人東海国立大学機構 AgAuTe化合物を主成分とする半導体ナノ粒子

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080277625A1 (en) * 2004-07-16 2008-11-13 Nat'l Institute Of Advanced Industrial Science And Technology Phosphor And Production Process Of Same
JP2007146154A (ja) * 2005-10-31 2007-06-14 Kyocera Corp 波長変換器、照明装置および照明装置集合体
JP2007169605A (ja) * 2005-11-24 2007-07-05 National Institute Of Advanced Industrial & Technology 蛍光体、及びその製造方法
GB0723539D0 (en) * 2007-12-01 2008-01-09 Nanoco Technologies Ltd Preparation of nonoparticle material
JP2010031115A (ja) * 2008-07-28 2010-02-12 Osaka Univ 半導体ナノ粒子の製造方法、および半導体ナノ粒子
KR101462658B1 (ko) * 2008-12-19 2014-11-17 삼성전자 주식회사 반도체 나노 결정 및 그 제조 방법
JP2012527402A (ja) * 2009-05-21 2012-11-08 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 銅スズ硫化物および銅亜鉛スズ硫化物膜を製造するための方法
JP2011178645A (ja) * 2010-03-04 2011-09-15 Idec Corp 半導体ナノ粒子及びその製造方法
KR20140015280A (ko) * 2010-11-22 2014-02-06 이 아이 듀폰 디 네모아 앤드 캄파니 반도체 잉크, 피막, 코팅된 기재 및 제조방법
US20130233202A1 (en) * 2010-12-03 2013-09-12 Ei Du Pont De Nemours And Company Inks and processes for preparing copper indium gallium sulfide/selenide coatings and films
JP6164637B2 (ja) * 2013-03-22 2017-07-19 国立大学法人名古屋大学 生体試料標識用蛍光プローブ
US20150162468A1 (en) * 2013-12-06 2015-06-11 Nanoco Technologies Ltd. Core-Shell Nanoparticles for Photovoltaic Absorber Films
JP6351157B2 (ja) * 2014-03-28 2018-07-04 国立大学法人名古屋大学 テルル化合物ナノ粒子及びその製法
CN104861964B (zh) * 2015-05-14 2016-06-29 中国科学院广州能源研究所 一种CuInS2/In2S3/ZnS双层核壳结构荧光量子点及其制备方法
KR102390960B1 (ko) * 2015-06-05 2022-04-27 삼성디스플레이 주식회사 표시 장치
JP2017122175A (ja) * 2016-01-07 2017-07-13 コニカミノルタ株式会社 半導体ナノ粒子及びその製造方法、並びに半導体ナノ粒子を用いた蛍光プローブ、led装置、波長変換フィルム、及び光電変換装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11643595B2 (en) 2021-06-21 2023-05-09 Nichia Corporation Wavelength conversion member, light-emitting device, and image display device
US12264272B2 (en) 2021-06-21 2025-04-01 Nichia Corporation Fluorescent material composite particles, wavelength converting member, light emitting device, method for producing fluorescent material composite particles, and method for producing wavelength converting member

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JP2023156284A (ja) 2023-10-24
JP2018044142A (ja) 2018-03-22
JP2019085575A (ja) 2019-06-06
JP7314327B2 (ja) 2023-07-25
JP2022051747A (ja) 2022-04-01
JP7607294B2 (ja) 2024-12-27

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