JP6461904B2 - 表面増強電場を用いた欠陥検出 - Google Patents

表面増強電場を用いた欠陥検出 Download PDF

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Publication number
JP6461904B2
JP6461904B2 JP2016501352A JP2016501352A JP6461904B2 JP 6461904 B2 JP6461904 B2 JP 6461904B2 JP 2016501352 A JP2016501352 A JP 2016501352A JP 2016501352 A JP2016501352 A JP 2016501352A JP 6461904 B2 JP6461904 B2 JP 6461904B2
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wafer
lens
solid immersion
scattered light
electric field
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Japanese (ja)
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JP2016516194A (ja
Inventor
グオヘン ヂャオ
グオヘン ヂャオ
デイビッド ダブリュ ショート
デイビッド ダブリュ ショート
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/33—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8848—Polarisation of light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2016501352A 2013-03-11 2014-03-11 表面増強電場を用いた欠陥検出 Active JP6461904B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361776728P 2013-03-11 2013-03-11
US61/776,728 2013-03-11
PCT/US2014/023817 WO2014164929A1 (en) 2013-03-11 2014-03-11 Defect detection using surface enhanced electric field

Publications (2)

Publication Number Publication Date
JP2016516194A JP2016516194A (ja) 2016-06-02
JP6461904B2 true JP6461904B2 (ja) 2019-01-30

Family

ID=51659012

Family Applications (1)

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JP2016501352A Active JP6461904B2 (ja) 2013-03-11 2014-03-11 表面増強電場を用いた欠陥検出

Country Status (6)

Country Link
US (1) US20150377795A1 (he)
JP (1) JP6461904B2 (he)
KR (1) KR102226781B1 (he)
IL (1) IL241345B (he)
TW (1) TWI688760B (he)
WO (1) WO2014164929A1 (he)

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US9541330B2 (en) 2013-07-17 2017-01-10 Whirlpool Corporation Method for drying articles
US9784499B2 (en) 2013-08-23 2017-10-10 Whirlpool Corporation Appliance for drying articles
US9410282B2 (en) 2013-10-02 2016-08-09 Whirlpool Corporation Method and apparatus for drying articles
US9645182B2 (en) * 2013-10-16 2017-05-09 Whirlpool Corporation Method and apparatus for detecting an energized E-field
NL2016311A (en) * 2015-02-25 2016-09-30 Asml Netherlands Bv Method and apparatus for inspection and metrology.
US9605899B2 (en) 2015-03-23 2017-03-28 Whirlpool Corporation Apparatus for drying articles
US9588044B2 (en) * 2015-07-16 2017-03-07 Globalfoundries Inc. Inline buried metal void detection by surface plasmon resonance (SPR)
WO2017024065A1 (en) * 2015-08-05 2017-02-09 Kla-Tencor Corporation Range-based real-time scanning electron microscope non-visual binner
NL2017505A (en) * 2015-10-09 2017-04-11 Asml Netherlands Bv Method and apparatus for inspection and metrology
JP6607607B2 (ja) * 2016-03-11 2019-11-20 国立大学法人九州工業大学 微粒子の３ｄ位置特定装置及び特定方法
US11815347B2 (en) * 2016-09-28 2023-11-14 Kla-Tencor Corporation Optical near-field metrology
WO2018233951A1 (en) * 2017-06-21 2018-12-27 Asml Netherlands B.V. METHOD AND APPARATUS FOR DETECTING SUBSTRATE SURFACE VARIATIONS
KR102387464B1 (ko) 2017-10-12 2022-04-15 삼성전자주식회사 배선 회로 테스트 장치 및 방법과, 그 방법을 포함한 반도체 소자 제조방법
US10883820B2 (en) * 2017-11-13 2021-01-05 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for metrology
CN111272773B (zh) * 2019-12-31 2021-10-29 浙江大学 一种半导体晶圆表面缺陷的快速超高分辨检测系统
KR20210121322A (ko) 2020-03-26 2021-10-08 삼성전자주식회사 기판 검사 시스템

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US5004307A (en) * 1990-04-12 1991-04-02 The Board Of Trustees Of The Leland Stanford Junior University Near field and solid immersion optical microscope
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH07248217A (ja) * 1994-03-14 1995-09-26 Topcon Corp 試料分析装置
JP3381924B2 (ja) * 1995-03-10 2003-03-04 株式会社 日立製作所 検査装置
US6180415B1 (en) * 1997-02-20 2001-01-30 The Regents Of The University Of California Plasmon resonant particles, methods and apparatus
US6441359B1 (en) * 1998-10-20 2002-08-27 The Board Of Trustees Of The Leland Stanford Junior University Near field optical scanning system employing microfabricated solid immersion lens
US6252412B1 (en) * 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
JP2001168158A (ja) * 1999-12-03 2001-06-22 Nec Corp 光学的パターン検査装置
US6934024B2 (en) * 2000-10-18 2005-08-23 Regents Of The University Of Minnesota Ellipsometry methods and apparatus using solid immersion tunneling
JP2003149120A (ja) * 2001-11-14 2003-05-21 Satoshi Kawada 近接場光を利用した装置用プローブヘッドとその利用装置
KR100549215B1 (ko) * 2004-04-09 2006-02-02 학교법인연세대학교 광위상 측정용 근접장 주사 광학 현미경
TWI348408B (en) * 2004-04-28 2011-09-11 Olympus Corp Laser processing device
US7351980B2 (en) * 2005-03-31 2008-04-01 Kla-Tencor Technologies Corp. All-reflective optical systems for broadband wafer inspection
US7842312B2 (en) * 2005-12-29 2010-11-30 Cordis Corporation Polymeric compositions comprising therapeutic agents in crystalline phases, and methods of forming the same
US8103087B2 (en) * 2006-01-20 2012-01-24 Hitachi High-Technologies Corporation Fault inspection method
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JP5174697B2 (ja) * 2008-01-31 2013-04-03 株式会社日立ハイテクノロジーズ 欠陥検査装置
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JP5350012B2 (ja) * 2009-02-27 2013-11-27 株式会社日立製作所 基板表面のパターン検査装置およびパターン検査方法
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WO2013064298A1 (en) * 2011-11-01 2013-05-10 Asml Holding N.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
TWI688760B (zh) 2020-03-21
JP2016516194A (ja) 2016-06-02
TW201447271A (zh) 2014-12-16
KR20150129751A (ko) 2015-11-20
US20150377795A1 (en) 2015-12-31
KR102226781B1 (ko) 2021-03-10
IL241345B (he) 2021-02-28
IL241345A0 (he) 2015-11-30
WO2014164929A1 (en) 2014-10-09

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