JP6453553B2 - カレントミラー回路及びこれを用いた受信装置 - Google Patents

カレントミラー回路及びこれを用いた受信装置 Download PDF

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Publication number
JP6453553B2
JP6453553B2 JP2014063372A JP2014063372A JP6453553B2 JP 6453553 B2 JP6453553 B2 JP 6453553B2 JP 2014063372 A JP2014063372 A JP 2014063372A JP 2014063372 A JP2014063372 A JP 2014063372A JP 6453553 B2 JP6453553 B2 JP 6453553B2
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JP
Japan
Prior art keywords
current
potential
transistor
mirror
drain
Prior art date
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Active
Application number
JP2014063372A
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English (en)
Japanese (ja)
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JP2015186194A5 (enExample
JP2015186194A (ja
Inventor
亮太 山塙
亮太 山塙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MegaChips Corp
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MegaChips Corp
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Publication date
Application filed by MegaChips Corp filed Critical MegaChips Corp
Priority to JP2014063372A priority Critical patent/JP6453553B2/ja
Priority to US14/669,063 priority patent/US9829906B2/en
Publication of JP2015186194A publication Critical patent/JP2015186194A/ja
Publication of JP2015186194A5 publication Critical patent/JP2015186194A5/ja
Application granted granted Critical
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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3084—Automatic control in amplifiers having semiconductor devices in receivers or transmitters for electromagnetic waves other than radiowaves, e.g. lightwaves
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/474—A current mirror being used as sensor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21115—An input signal dependant signal being measured by current measuring at the input of a power amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
  • Analogue/Digital Conversion (AREA)
JP2014063372A 2014-03-26 2014-03-26 カレントミラー回路及びこれを用いた受信装置 Active JP6453553B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014063372A JP6453553B2 (ja) 2014-03-26 2014-03-26 カレントミラー回路及びこれを用いた受信装置
US14/669,063 US9829906B2 (en) 2014-03-26 2015-03-26 Current mirror circuit and receiver using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014063372A JP6453553B2 (ja) 2014-03-26 2014-03-26 カレントミラー回路及びこれを用いた受信装置

Publications (3)

Publication Number Publication Date
JP2015186194A JP2015186194A (ja) 2015-10-22
JP2015186194A5 JP2015186194A5 (enExample) 2017-03-30
JP6453553B2 true JP6453553B2 (ja) 2019-01-16

Family

ID=54190233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014063372A Active JP6453553B2 (ja) 2014-03-26 2014-03-26 カレントミラー回路及びこれを用いた受信装置

Country Status (2)

Country Link
US (1) US9829906B2 (enExample)
JP (1) JP6453553B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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DE102016207714B4 (de) * 2016-05-04 2018-08-23 Dialog Semiconductor (Uk) Limited Spannungsregler mit Stromstärkeverringerungsmodus und entsprechendes Verfahren
JP2017062225A (ja) * 2016-05-27 2017-03-30 株式会社メジャーテックツルミ 重心位置計測装置
KR102509586B1 (ko) 2016-08-17 2023-03-14 매그나칩 반도체 유한회사 바이어스 전류 생성회로 및 이를 이용한 오티피 메모리 소자 읽기 방법
US9767888B1 (en) * 2016-12-30 2017-09-19 Cadence Design Systems, Inc. Methods and devices for high-sensitivity memory interface receiver
CN108111230B (zh) * 2018-01-19 2023-07-21 厦门优迅高速芯片有限公司 一种复用光通信光接收组件mon管脚的电路
US10803962B1 (en) * 2019-04-01 2020-10-13 Micron Technology, Inc. Current monitoring in semiconductor packages
DE102022210593A1 (de) * 2022-10-06 2024-04-11 Robert Bosch Gesellschaft mit beschränkter Haftung Vorrichtung mit einer Vergleichereinrichtung und Betriebsverfahren hierfür

Family Cites Families (26)

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US4937469A (en) * 1988-08-30 1990-06-26 International Business Machines Corporation Switched current mode driver in CMOS with short circuit protection
JP3094764B2 (ja) * 1993-12-27 2000-10-03 株式会社日立製作所 基準電流発生回路
JP3475877B2 (ja) * 1999-10-25 2003-12-10 日本電気株式会社 前置増幅回路
JP2002270768A (ja) 2001-03-08 2002-09-20 Nec Corp Ｃｍｏｓ基準電圧回路
GB0211564D0 (en) * 2002-05-21 2002-06-26 Tournaz Technology Ltd Reference circuit
US6828832B2 (en) * 2002-07-26 2004-12-07 International Business Machines Corporation Voltage to current converter circuit
US7433253B2 (en) * 2002-12-20 2008-10-07 Qimonda Ag Integrated circuit, method of operating an integrated circuit, method of manufacturing an integrated circuit, memory module, stackable memory module
WO2005046094A1 (de) * 2003-10-17 2005-05-19 Zentrum Mikroelektronik Dresden Ag Verfahren und anordnung zur wandlung einer optischen empfangsimpulsfolge in eine elektrische ausgangsimpulsfolge
US7113044B2 (en) * 2004-08-18 2006-09-26 Texas Instruments Incorporated Precision current mirror and method for voltage to current conversion in low voltage applications
JP4908223B2 (ja) * 2004-09-28 2012-04-04 ローム株式会社 受信装置およびそれを用いた電子機器
JP2006319427A (ja) * 2005-05-10 2006-11-24 Sumitomo Electric Ind Ltd 光受信器
US7423476B2 (en) * 2006-09-25 2008-09-09 Micron Technology, Inc. Current mirror circuit having drain-source voltage clamp
US8294441B2 (en) * 2006-11-13 2012-10-23 Decicon, Inc. Fast low dropout voltage regulator circuit
JP2008288900A (ja) 2007-05-17 2008-11-27 Advantest Corp 差動増幅器
US7893654B2 (en) * 2007-09-03 2011-02-22 Elite Micropower Inc. Constant-current, constant-voltage and constant-temperature current supply of a battery charger
US8129671B2 (en) * 2007-12-11 2012-03-06 Renesas Electronics Corporation Power supply dependent optical receiver and amplifier and photocoupler using the same
JP5512635B2 (ja) * 2011-02-23 2014-06-04 シャープ株式会社 光センサおよび電子機器
JP2011155699A (ja) * 2011-04-28 2011-08-11 Nippon Telegr & Teleph Corp <Ntt> トランスインピーダンスアンプ
JP5657148B2 (ja) * 2012-01-25 2015-01-21 三菱電機株式会社 光受信器、局側光終端装置および受光レベルモニタ方法
JP2013251375A (ja) * 2012-05-31 2013-12-12 Toshiba Corp 光送信回路及び光送受信回路モジュール
JP5535384B2 (ja) * 2012-09-19 2014-07-02 古河電気工業株式会社 光端末装置、伝送装置、及び、光伝送システム
US9503198B2 (en) * 2012-09-27 2016-11-22 Mitsubishi Electric Corporation Receiver and reception method
US9195252B1 (en) * 2013-03-14 2015-11-24 Maxim Integrated Products, Inc. Method and apparatus for current sensing and measurement
CN104808729B (zh) * 2014-01-27 2017-10-13 澜起科技（上海）有限公司 一种稳压器及稳压的方法
US9898028B2 (en) * 2014-11-20 2018-02-20 Qualcomm Incorporated Low voltage, highly accurate current mirror
EP3386106B1 (en) * 2015-07-08 2021-03-24 Power Integrations Switzerland GmbH Receiver circuit

Also Published As

Publication number Publication date
US20150277470A1 (en) 2015-10-01
US9829906B2 (en) 2017-11-28
JP2015186194A (ja) 2015-10-22

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