JP6449851B2 - エルパソライト型シンチレータ材料の製造 - Google Patents
エルパソライト型シンチレータ材料の製造 Download PDFInfo
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- JP6449851B2 JP6449851B2 JP2016507043A JP2016507043A JP6449851B2 JP 6449851 B2 JP6449851 B2 JP 6449851B2 JP 2016507043 A JP2016507043 A JP 2016507043A JP 2016507043 A JP2016507043 A JP 2016507043A JP 6449851 B2 JP6449851 B2 JP 6449851B2
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- elpasolite
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
- G01T1/2023—Selection of materials
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7772—Halogenides
- C09K11/7773—Halogenides with alkali or alkaline earth metal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Luminescent Compositions (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1353354A FR3004467B1 (fr) | 2013-04-12 | 2013-04-12 | Fabrication d'une elpasolite stoechiometrique |
| FR1353354 | 2013-04-12 | ||
| PCT/FR2014/050893 WO2014167262A1 (fr) | 2013-04-12 | 2014-04-11 | Fabrication d'un materiau scintillateur du type elpasolite |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016522135A JP2016522135A (ja) | 2016-07-28 |
| JP2016522135A5 JP2016522135A5 (enExample) | 2018-10-18 |
| JP6449851B2 true JP6449851B2 (ja) | 2019-01-09 |
Family
ID=49510232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016507043A Active JP6449851B2 (ja) | 2013-04-12 | 2014-04-11 | エルパソライト型シンチレータ材料の製造 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US9599727B2 (enExample) |
| EP (1) | EP2984213B1 (enExample) |
| JP (1) | JP6449851B2 (enExample) |
| CN (2) | CN113174635B (enExample) |
| FR (1) | FR3004467B1 (enExample) |
| WO (1) | WO2014167262A1 (enExample) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9733386B2 (en) | 2014-10-29 | 2017-08-15 | Saint-Gobain Ceramics & Plastics, Inc. | Scintillator including an elpasolite scintillator compound and apparatus including the scintillator |
| US11254867B1 (en) | 2015-04-06 | 2022-02-22 | Radiation Monitoring Devices, Inc. | Thallium-based scintillator materials |
| CN108004591A (zh) * | 2017-12-11 | 2018-05-08 | 达州励志环保科技有限公司 | 钾冰晶石类型闪烁体材料的制备 |
| JP7417924B2 (ja) * | 2018-01-05 | 2024-01-19 | パナソニックIpマネジメント株式会社 | 固体電解質材料、および、電池 |
| EP3736823A4 (en) * | 2018-01-05 | 2021-03-10 | Panasonic Intellectual Property Management Co., Ltd. | SOLID ELECTROLYTE MATERIAL AND BATTERY |
| CN111344811B (zh) | 2018-01-05 | 2022-05-10 | 松下知识产权经营株式会社 | 固体电解质材料及电池 |
| WO2019135320A1 (ja) | 2018-01-05 | 2019-07-11 | パナソニックIpマネジメント株式会社 | 固体電解質材料、および、電池 |
| CN111492442A (zh) * | 2018-01-05 | 2020-08-04 | 松下知识产权经营株式会社 | 固体电解质材料和电池 |
| CN111492443B (zh) | 2018-01-05 | 2022-04-29 | 松下知识产权经营株式会社 | 固体电解质材料和电池 |
| CN111295789B (zh) * | 2018-01-05 | 2024-07-19 | 松下知识产权经营株式会社 | 固体电解质材料和电池 |
| EP3736891B1 (en) | 2018-01-05 | 2024-07-31 | Panasonic Intellectual Property Management Co., Ltd. | Positive electrode material and battery |
| WO2019135347A1 (ja) * | 2018-01-05 | 2019-07-11 | パナソニックIpマネジメント株式会社 | 固体電解質材料、および、電池 |
| JP7253707B2 (ja) | 2018-01-05 | 2023-04-07 | パナソニックIpマネジメント株式会社 | 固体電解質材料、および、電池 |
| JP7417926B2 (ja) * | 2018-01-05 | 2024-01-19 | パナソニックIpマネジメント株式会社 | 固体電解質材料、および、電池 |
| JP7281672B2 (ja) | 2018-01-05 | 2023-05-26 | パナソニックIpマネジメント株式会社 | 電池 |
| JP7611524B2 (ja) * | 2018-01-05 | 2025-01-10 | パナソニックIpマネジメント株式会社 | 固体電解質材料、および、電池 |
| EP3736826A4 (en) | 2018-01-05 | 2021-03-10 | Panasonic Intellectual Property Management Co., Ltd. | SOLID ELECTROLYTE AND BATTERY |
| JP7165899B2 (ja) | 2018-01-05 | 2022-11-07 | パナソニックIpマネジメント株式会社 | 固体電解質材料、および、電池 |
| EP3745422A4 (en) * | 2018-01-26 | 2021-03-10 | Panasonic Intellectual Property Management Co., Ltd. | SOLID ELECTROLYTE AND BATTERY |
| EP3745522A4 (en) | 2018-01-26 | 2021-03-17 | Panasonic Intellectual Property Management Co., Ltd. | DRUMS |
| EP3745508A4 (en) | 2018-01-26 | 2021-03-17 | Panasonic Intellectual Property Management Co., Ltd. | POSITIVE ELECTRODE MATERIAL AND BATTERY USING IT |
| WO2019146296A1 (ja) | 2018-01-26 | 2019-08-01 | パナソニックIpマネジメント株式会社 | 正極材料およびそれを用いた電池 |
| JPWO2019146218A1 (ja) * | 2018-01-26 | 2021-01-28 | パナソニックIpマネジメント株式会社 | 固体電解質材料、および、電池 |
| WO2020005762A1 (en) | 2018-06-29 | 2020-01-02 | Saint-Gobain Ceramics & Plastics, Inc. | Luminescent material including a rare earth halide and an apparatus including such material |
| EP3881103B1 (en) | 2018-11-13 | 2025-11-05 | Teledyne FLIR Defense, Inc. | Occlusion-based directionality and localization of radiation sources with modular detection systems and methods |
| JP7429869B2 (ja) | 2018-11-29 | 2024-02-09 | パナソニックIpマネジメント株式会社 | 負極材料、および、電池 |
| CN112368863B (zh) | 2018-11-29 | 2024-08-23 | 松下知识产权经营株式会社 | 负极材料、电池以及电池的制造方法 |
| JP7378039B2 (ja) * | 2018-12-26 | 2023-11-13 | パナソニックIpマネジメント株式会社 | ハロゲン化物の製造方法 |
| EP3904287A4 (en) * | 2018-12-26 | 2022-02-16 | Panasonic Intellectual Property Management Co., Ltd. | HALOGENIDE PRODUCTION PROCESS |
| EP3904288A4 (en) * | 2018-12-26 | 2022-02-23 | Panasonic Intellectual Property Management Co., Ltd. | Method for producing halides |
| JP7417953B2 (ja) | 2018-12-26 | 2024-01-19 | パナソニックIpマネジメント株式会社 | 固体電解質およびそれを用いた電池 |
| WO2020137392A1 (ja) | 2018-12-26 | 2020-07-02 | パナソニックIpマネジメント株式会社 | 固体電解質材料およびそれを用いた電池 |
| JP7365599B2 (ja) * | 2018-12-26 | 2023-10-20 | パナソニックIpマネジメント株式会社 | ハロゲン化物の製造方法 |
| EP4101021B1 (en) | 2020-04-14 | 2025-09-03 | Saint-Gobain Ceramics & Plastics Inc. | Electrolyte material and methods of forming |
| CN115362587B (zh) | 2020-04-14 | 2024-12-31 | 圣戈本陶瓷及塑料股份有限公司 | 离子导电材料、包括离子导电材料的电解质和形成方法 |
| EP4104232B1 (en) | 2020-04-23 | 2025-11-05 | Saint-Gobain Ceramics & Plastics, Inc. | Ion conductive layer and methods of forming |
| FI4104233T3 (fi) | 2020-04-23 | 2025-12-04 | Saint Gobain Ceramics | Ioneja johtava kerros ja muodostamismenetelmiä |
| CN120727955A (zh) | 2020-08-07 | 2025-09-30 | 圣戈本陶瓷及塑料股份有限公司 | 电解质材料及其形成方法 |
| US11928472B2 (en) | 2020-09-26 | 2024-03-12 | Intel Corporation | Branch prefetch mechanisms for mitigating frontend branch resteers |
| US12182317B2 (en) | 2021-02-13 | 2024-12-31 | Intel Corporation | Region-based deterministic memory safety |
| KR102637203B1 (ko) | 2021-05-17 | 2024-02-19 | 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. | 전해질 물질 및 형성 방법 |
| KR102618325B1 (ko) * | 2021-05-21 | 2023-12-27 | 한양대학교 산학협력단 | 금속 할라이드 신틸레이터 및 이의 제조방법 |
| US12504891B2 (en) | 2021-06-24 | 2025-12-23 | Intel Corporation | Zero-redundancy tag storage for bucketed allocators |
| US12235791B2 (en) | 2021-08-23 | 2025-02-25 | Intel Corporation | Loop driven region based frontend translation control for performant and secure data-space guided micro-sequencing |
| CN114411251B (zh) * | 2022-01-20 | 2023-05-02 | 西北工业大学深圳研究院 | 一种使用移动加热器法生长高质量cllb晶体的方法 |
| CN115368897B (zh) * | 2022-08-09 | 2024-04-02 | 有研稀土新材料股份有限公司 | 一种钾冰晶石型稀土闪烁材料 |
| FR3142494B1 (fr) | 2022-11-29 | 2025-07-18 | Saint Gobain Cristaux Et Detecteurs | Procede de fabrication d’un monocrital halogenure a section polygonale |
| CN116120935B (zh) * | 2023-01-17 | 2024-04-19 | 有研稀土新材料股份有限公司 | 一种钾冰晶石型稀土闪烁材料及其制备方法、探测设备 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0685548B1 (en) | 1994-06-03 | 2003-02-26 | Agfa-Gevaert | A novel class of high energy detecting materials |
| DE69529700T2 (de) | 1994-06-03 | 2003-10-16 | Agfa-Gevaert, Mortsel | Neue Klasse von hochenergetischen Detektionsmaterialien |
| FR2840926B1 (fr) | 2002-06-12 | 2005-03-04 | Saint Gobain Cristaux Detecteu | Utilisation d'un creuset comprenant du carbone pour la croissance de cristaux comprenant un halogenure de terre rare |
| FR2847594B1 (fr) | 2002-11-27 | 2004-12-24 | Saint Gobain Cristaux Detecteu | Preparation de blocs d'halogenure de terre rare |
| FR2855830B1 (fr) * | 2003-06-05 | 2005-07-08 | Stichting Tech Wetenschapp | Cristaux scintillateurs du type iodure de terre rare |
| EP1660610A1 (en) * | 2003-08-27 | 2006-05-31 | Philips Intellectual Property & Standards GmbH | Gas discharge lamp with down conversion phosphor |
| EP1553430A1 (en) | 2004-01-09 | 2005-07-13 | Stichting Voor De Technische Wetenschappen | High light yield thermal neutron scintillators |
| JP2005246193A (ja) * | 2004-03-03 | 2005-09-15 | Konica Minolta Holdings Inc | 複合皮膜の製造方法、溶射用粒子、複合皮膜及びそれを用いた放射線画像変換パネル |
| FR2869115B1 (fr) | 2004-04-14 | 2006-05-26 | Saint Gobain Cristaux Detecteu | Materiau scintillateur a base de terre rare a bruit de fond nucleaire reduit |
| US7335891B2 (en) * | 2005-06-27 | 2008-02-26 | General Electric Company | Gamma and neutron radiation detector |
| US20080131347A1 (en) * | 2006-12-04 | 2008-06-05 | General Electric Company | Scintillation compositions and method of manufacture thereof |
| US8575553B1 (en) | 2007-11-09 | 2013-11-05 | Radiation Monitoring Devices, Inc. | Cesium and sodium-containing scintillator compositions |
| US7977645B1 (en) * | 2007-11-09 | 2011-07-12 | Radiation Monitoring Devices, Inc. | Mixed cesium sodium and lithium halide scintillator compositions |
| US7939808B1 (en) | 2007-11-09 | 2011-05-10 | Radiation Monitoring Devices, Inc. | Cesium and lithium-containing quaternary compound scintillators |
| US8242452B1 (en) | 2007-11-09 | 2012-08-14 | Radiation Monitoring Devices, Inc. | Cesium and sodium-containing scintillator compositions |
| US7655919B1 (en) | 2007-11-09 | 2010-02-02 | Radiation Monitoring Devices, Inc. | Cesium and lithium-containing quaternary compound scintillators |
| US7767975B2 (en) * | 2007-12-04 | 2010-08-03 | Saint-Gobain Cristaux Et Detecteurs | Ionizing radiation detector |
| US8440980B2 (en) | 2009-08-03 | 2013-05-14 | Radiation Monitoring Devices, Inc. | CsLiLn halide scintillator |
| FR2967420B1 (fr) * | 2010-11-16 | 2014-01-17 | Saint Gobain Cristaux Et Detecteurs | Materiau scintillateur a faible luminescence retardee |
| EP4234659B1 (en) * | 2011-09-22 | 2025-07-02 | Luxium Solutions | Apparatus comprising a scintillator |
| US11107600B2 (en) * | 2011-10-10 | 2021-08-31 | Siemens Medical Solutions Usa, Inc. | Rare-earth metal halide scintillators with reduced hygroscopicity and method of making the same |
| CN103131418B (zh) * | 2011-11-23 | 2017-04-12 | 通用电气公司 | Ce3+激活的混合卤化物钾冰晶石以及高能量分辨率闪烁体 |
| US9624429B2 (en) * | 2013-07-19 | 2017-04-18 | University Of Tennessee Research Foundation | Ternary metal halide scintillators |
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2013
- 2013-04-12 FR FR1353354A patent/FR3004467B1/fr active Active
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2014
- 2014-04-11 CN CN202110461201.1A patent/CN113174635B/zh active Active
- 2014-04-11 WO PCT/FR2014/050893 patent/WO2014167262A1/fr not_active Ceased
- 2014-04-11 CN CN201480020858.2A patent/CN105102693B/zh active Active
- 2014-04-11 JP JP2016507043A patent/JP6449851B2/ja active Active
- 2014-04-11 EP EP14722265.7A patent/EP2984213B1/fr active Active
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2015
- 2015-10-09 US US14/879,650 patent/US9599727B2/en active Active
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2017
- 2017-01-27 US US15/418,396 patent/US9983318B2/en active Active
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2018
- 2018-04-23 US US15/960,061 patent/US10180503B2/en active Active
- 2018-11-30 US US16/206,545 patent/US10598800B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20190107636A1 (en) | 2019-04-11 |
| US9599727B2 (en) | 2017-03-21 |
| CN105102693B (zh) | 2021-07-13 |
| US20180246230A1 (en) | 2018-08-30 |
| JP2016522135A (ja) | 2016-07-28 |
| CN113174635B (zh) | 2025-01-07 |
| US20170139059A1 (en) | 2017-05-18 |
| FR3004467A1 (fr) | 2014-10-17 |
| US10180503B2 (en) | 2019-01-15 |
| FR3004467B1 (fr) | 2016-05-27 |
| WO2014167262A1 (fr) | 2014-10-16 |
| CN105102693A (zh) | 2015-11-25 |
| US10598800B2 (en) | 2020-03-24 |
| CN113174635A (zh) | 2021-07-27 |
| EP2984213B1 (fr) | 2022-06-22 |
| US9983318B2 (en) | 2018-05-29 |
| US20160103232A1 (en) | 2016-04-14 |
| EP2984213A1 (fr) | 2016-02-17 |
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