CN113174635B - 钾冰晶石类型闪烁体材料的制备 - Google Patents

钾冰晶石类型闪烁体材料的制备 Download PDF

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Publication number
CN113174635B
CN113174635B CN202110461201.1A CN202110461201A CN113174635B CN 113174635 B CN113174635 B CN 113174635B CN 202110461201 A CN202110461201 A CN 202110461201A CN 113174635 B CN113174635 B CN 113174635B
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mixture
crystalline
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bath
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CN113174635A (zh
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V·欧斯彭斯基
S·布拉于塔
R·于歇
J·勒热
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Luxim Solutions LLC
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • G01T1/202Measuring radiation intensity with scintillation detectors the detector being a crystal
    • G01T1/2023Selection of materials
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7772Halogenides
    • C09K11/7773Halogenides with alkali or alkaline earth metal
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/02Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/12Halides
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • G01T1/202Measuring radiation intensity with scintillation detectors the detector being a crystal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Luminescent Compositions (AREA)
  • Measurement Of Radiation (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
CN202110461201.1A 2013-04-12 2014-04-11 钾冰晶石类型闪烁体材料的制备 Active CN113174635B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FR1353354A FR3004467B1 (fr) 2013-04-12 2013-04-12 Fabrication d'une elpasolite stoechiometrique
FR1353354 2013-04-12
CN201480020858.2A CN105102693B (zh) 2013-04-12 2014-04-11 钾冰晶石类型闪烁体材料的制备
PCT/FR2014/050893 WO2014167262A1 (fr) 2013-04-12 2014-04-11 Fabrication d'un materiau scintillateur du type elpasolite

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CN201480020858.2A Division CN105102693B (zh) 2013-04-12 2014-04-11 钾冰晶石类型闪烁体材料的制备

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CN113174635A CN113174635A (zh) 2021-07-27
CN113174635B true CN113174635B (zh) 2025-01-07

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US (4) US9599727B2 (enExample)
EP (1) EP2984213B1 (enExample)
JP (1) JP6449851B2 (enExample)
CN (2) CN113174635B (enExample)
FR (1) FR3004467B1 (enExample)
WO (1) WO2014167262A1 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016069296A1 (en) * 2014-10-29 2016-05-06 Saint-Gobain Ceramics And Plastics, Inc. Scintillator including an elpasolite scintillator compound and apparatus including the scintillator
US11254867B1 (en) 2015-04-06 2022-02-22 Radiation Monitoring Devices, Inc. Thallium-based scintillator materials
CN108004591A (zh) * 2017-12-11 2018-05-08 达州励志环保科技有限公司 钾冰晶石类型闪烁体材料的制备
JP7417924B2 (ja) * 2018-01-05 2024-01-19 パナソニックIpマネジメント株式会社 固体電解質材料、および、電池
CN111295720B (zh) 2018-01-05 2022-05-10 松下知识产权经营株式会社 固体电解质材料及电池
CN111295789B (zh) 2018-01-05 2024-07-19 松下知识产权经营株式会社 固体电解质材料和电池
EP3736823A4 (en) * 2018-01-05 2021-03-10 Panasonic Intellectual Property Management Co., Ltd. SOLID ELECTROLYTE MATERIAL AND BATTERY
CN111344811B (zh) * 2018-01-05 2022-05-10 松下知识产权经营株式会社 固体电解质材料及电池
EP3736826A4 (en) 2018-01-05 2021-03-10 Panasonic Intellectual Property Management Co., Ltd. SOLID ELECTROLYTE AND BATTERY
WO2019135320A1 (ja) 2018-01-05 2019-07-11 パナソニックIpマネジメント株式会社 固体電解質材料、および、電池
EP3736891B1 (en) 2018-01-05 2024-07-31 Panasonic Intellectual Property Management Co., Ltd. Positive electrode material and battery
CN116885271A (zh) * 2018-01-05 2023-10-13 松下知识产权经营株式会社 固体电解质材料和电池
CN111279432B (zh) * 2018-01-05 2022-09-09 松下知识产权经营株式会社 固体电解质材料和电池
EP3736827A4 (en) * 2018-01-05 2021-03-10 Panasonic Intellectual Property Management Co., Ltd. SOLID ELECTROLYTE MATERIAL AND BATTERY
WO2019135336A1 (ja) * 2018-01-05 2019-07-11 パナソニックIpマネジメント株式会社 固体電解質材料、および、電池
WO2019135318A1 (ja) 2018-01-05 2019-07-11 パナソニックIpマネジメント株式会社 固体電解質材料、および、電池
CN111295721B (zh) * 2018-01-05 2022-04-26 松下知识产权经营株式会社 固体电解质材料及电池
JP7281672B2 (ja) 2018-01-05 2023-05-26 パナソニックIpマネジメント株式会社 電池
JP7217432B2 (ja) 2018-01-26 2023-02-03 パナソニックIpマネジメント株式会社 正極材料およびそれを用いた電池
WO2019146219A1 (ja) 2018-01-26 2019-08-01 パナソニックIpマネジメント株式会社 固体電解質材料、および、電池
EP3745503A4 (en) 2018-01-26 2021-03-10 Panasonic Intellectual Property Management Co., Ltd. POSITIVE ELECTRODE MATERIAL AND USING BATTERY
JP7316564B6 (ja) 2018-01-26 2024-02-19 パナソニックIpマネジメント株式会社 電池
WO2019146218A1 (ja) * 2018-01-26 2019-08-01 パナソニックIpマネジメント株式会社 固体電解質材料、および、電池
US11242484B2 (en) 2018-06-29 2022-02-08 Saint-Gobain Ceramics & Plastics, Inc. Luminescent material including a rare earth halide and an apparatus including such material
WO2020101835A1 (en) 2018-11-13 2020-05-22 Flir Detection, Inc. Occlusion-based directionality and localization of radiation sources with modular detection systems and methods
WO2020110479A1 (ja) 2018-11-29 2020-06-04 パナソニックIpマネジメント株式会社 負極材料、および、電池
EP3890073A4 (en) 2018-11-29 2022-01-19 Panasonic Intellectual Property Management Co., Ltd. Negative electrode material, battery and method for producing battery
EP3904289A4 (en) * 2018-12-26 2022-03-02 Panasonic Intellectual Property Management Co., Ltd. PROCESS FOR MANUFACTURE OF HALOGEN
WO2020136952A1 (ja) * 2018-12-26 2020-07-02 パナソニックIpマネジメント株式会社 ハロゲン化物の製造方法
EP3904288A4 (en) * 2018-12-26 2022-02-23 Panasonic Intellectual Property Management Co., Ltd. Method for producing halides
JP7417953B2 (ja) 2018-12-26 2024-01-19 パナソニックIpマネジメント株式会社 固体電解質およびそれを用いた電池
CN112823140A (zh) * 2018-12-26 2021-05-18 松下知识产权经营株式会社 卤化物的制造方法
WO2020137392A1 (ja) 2018-12-26 2020-07-02 パナソニックIpマネジメント株式会社 固体電解質材料およびそれを用いた電池
EP4101021B1 (en) 2020-04-14 2025-09-03 Saint-Gobain Ceramics & Plastics Inc. Electrolyte material and methods of forming
KR102595966B1 (ko) * 2020-04-14 2023-11-01 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 이온 전도성 재료, 이온 전도성 재료를 포함하는 전해질 및 형성 방법
FI4104232T3 (fi) 2020-04-23 2025-12-12 Saint Gobain Ceramics Ioneja johtava kerros ja muodostamismenetelmiä
KR20230079480A (ko) 2020-04-23 2023-06-07 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 이온 전도층 및 형성 방법
CN120727955A (zh) 2020-08-07 2025-09-30 圣戈本陶瓷及塑料股份有限公司 电解质材料及其形成方法
US11928472B2 (en) 2020-09-26 2024-03-12 Intel Corporation Branch prefetch mechanisms for mitigating frontend branch resteers
US12182317B2 (en) 2021-02-13 2024-12-31 Intel Corporation Region-based deterministic memory safety
KR102637203B1 (ko) 2021-05-17 2024-02-19 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 전해질 물질 및 형성 방법
KR102618325B1 (ko) * 2021-05-21 2023-12-27 한양대학교 산학협력단 금속 할라이드 신틸레이터 및 이의 제조방법
US12235791B2 (en) 2021-08-23 2025-02-25 Intel Corporation Loop driven region based frontend translation control for performant and secure data-space guided micro-sequencing
CN114411251B (zh) * 2022-01-20 2023-05-02 西北工业大学深圳研究院 一种使用移动加热器法生长高质量cllb晶体的方法
CN115368897B (zh) * 2022-08-09 2024-04-02 有研稀土新材料股份有限公司 一种钾冰晶石型稀土闪烁材料
FR3142494B1 (fr) 2022-11-29 2025-07-18 Saint Gobain Cristaux Et Detecteurs Procede de fabrication d’un monocrital halogenure a section polygonale
CN116120935B (zh) * 2023-01-17 2024-04-19 有研稀土新材料股份有限公司 一种钾冰晶石型稀土闪烁材料及其制备方法、探测设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013041251A2 (en) * 2011-09-22 2013-03-28 Saint-Gobain Cristaux Et Detecteurs Scintillation compound including a rare earth element and a process of forming the same

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69529700T2 (de) * 1994-06-03 2003-10-16 Agfa-Gevaert, Mortsel Neue Klasse von hochenergetischen Detektionsmaterialien
EP0685548B1 (en) 1994-06-03 2003-02-26 Agfa-Gevaert A novel class of high energy detecting materials
FR2840926B1 (fr) 2002-06-12 2005-03-04 Saint Gobain Cristaux Detecteu Utilisation d'un creuset comprenant du carbone pour la croissance de cristaux comprenant un halogenure de terre rare
FR2847594B1 (fr) 2002-11-27 2004-12-24 Saint Gobain Cristaux Detecteu Preparation de blocs d'halogenure de terre rare
FR2855830B1 (fr) * 2003-06-05 2005-07-08 Stichting Tech Wetenschapp Cristaux scintillateurs du type iodure de terre rare
WO2005021680A1 (en) * 2003-08-27 2005-03-10 Philips Intellectual Property & Standards Gmbh Gas discharge lamp with down conversion phosphor
EP1553430A1 (en) 2004-01-09 2005-07-13 Stichting Voor De Technische Wetenschappen High light yield thermal neutron scintillators
JP2005246193A (ja) * 2004-03-03 2005-09-15 Konica Minolta Holdings Inc 複合皮膜の製造方法、溶射用粒子、複合皮膜及びそれを用いた放射線画像変換パネル
FR2869115B1 (fr) 2004-04-14 2006-05-26 Saint Gobain Cristaux Detecteu Materiau scintillateur a base de terre rare a bruit de fond nucleaire reduit
US7335891B2 (en) * 2005-06-27 2008-02-26 General Electric Company Gamma and neutron radiation detector
US20080131347A1 (en) * 2006-12-04 2008-06-05 General Electric Company Scintillation compositions and method of manufacture thereof
US8242452B1 (en) 2007-11-09 2012-08-14 Radiation Monitoring Devices, Inc. Cesium and sodium-containing scintillator compositions
US7655919B1 (en) 2007-11-09 2010-02-02 Radiation Monitoring Devices, Inc. Cesium and lithium-containing quaternary compound scintillators
US8575553B1 (en) 2007-11-09 2013-11-05 Radiation Monitoring Devices, Inc. Cesium and sodium-containing scintillator compositions
US7939808B1 (en) 2007-11-09 2011-05-10 Radiation Monitoring Devices, Inc. Cesium and lithium-containing quaternary compound scintillators
US7977645B1 (en) * 2007-11-09 2011-07-12 Radiation Monitoring Devices, Inc. Mixed cesium sodium and lithium halide scintillator compositions
US7767975B2 (en) * 2007-12-04 2010-08-03 Saint-Gobain Cristaux Et Detecteurs Ionizing radiation detector
US8440980B2 (en) 2009-08-03 2013-05-14 Radiation Monitoring Devices, Inc. CsLiLn halide scintillator
FR2967420B1 (fr) * 2010-11-16 2014-01-17 Saint Gobain Cristaux Et Detecteurs Materiau scintillateur a faible luminescence retardee
US11107600B2 (en) * 2011-10-10 2021-08-31 Siemens Medical Solutions Usa, Inc. Rare-earth metal halide scintillators with reduced hygroscopicity and method of making the same
CN103131418B (zh) * 2011-11-23 2017-04-12 通用电气公司 Ce3+激活的混合卤化物钾冰晶石以及高能量分辨率闪烁体
CN105555916B (zh) * 2013-07-19 2018-09-25 田纳西大学研究基金会 三元金属卤化物闪烁体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013041251A2 (en) * 2011-09-22 2013-03-28 Saint-Gobain Cristaux Et Detecteurs Scintillation compound including a rare earth element and a process of forming the same

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Bridgman growth of Cs2LiYCl6:Ce and 6Li-enriched Cs2 6LiYCl6:Ce crystals for high resolution gamma ray and neutron spectrometers;William M. Higgins;journal of Crystal Growth;第312卷;1216-1220 *
Dual Gamma Neutron detection with Cs2LiLaCl6;Jarek Glodo;Proc. of SPIE;第7449卷;7449E-1~7 *
Impact of ion-host interactions on the 5d-to-4f spectra of lanthanide rare-earth-metal ions. Ⅱ. The Ce-doped elpasolites;Brian F. Aull;PHYSICAL REVIEW B;第34卷(第10期);第6647-6655页 *
Scintillation properties of Cs2LiLaBr6 (CLLB) crystals with varying Ce3+ concentration;Urmila Shirwadkar;Nuclear Instruments and Methods in Physics Research A;第652卷;268-270 *

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CN105102693A (zh) 2015-11-25
US10598800B2 (en) 2020-03-24
CN113174635A (zh) 2021-07-27
US9599727B2 (en) 2017-03-21
US20190107636A1 (en) 2019-04-11
EP2984213A1 (fr) 2016-02-17
JP6449851B2 (ja) 2019-01-09
FR3004467B1 (fr) 2016-05-27
US20160103232A1 (en) 2016-04-14
US20170139059A1 (en) 2017-05-18
US20180246230A1 (en) 2018-08-30
US9983318B2 (en) 2018-05-29
EP2984213B1 (fr) 2022-06-22
CN105102693B (zh) 2021-07-13
US10180503B2 (en) 2019-01-15
JP2016522135A (ja) 2016-07-28
WO2014167262A1 (fr) 2014-10-16
FR3004467A1 (fr) 2014-10-17

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