JP6446881B2 - ガス供給装置及びバルブ装置 - Google Patents

ガス供給装置及びバルブ装置 Download PDF

Info

Publication number
JP6446881B2
JP6446881B2 JP2014147035A JP2014147035A JP6446881B2 JP 6446881 B2 JP6446881 B2 JP 6446881B2 JP 2014147035 A JP2014147035 A JP 2014147035A JP 2014147035 A JP2014147035 A JP 2014147035A JP 6446881 B2 JP6446881 B2 JP 6446881B2
Authority
JP
Japan
Prior art keywords
gas
flow path
valve
valve body
orifice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014147035A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016023324A5 (https=
JP2016023324A (ja
Inventor
成幸 大倉
成幸 大倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2014147035A priority Critical patent/JP6446881B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020177000739A priority patent/KR101923834B1/ko
Priority to CN201580039064.5A priority patent/CN106661730B/zh
Priority to PCT/JP2015/003380 priority patent/WO2016009608A1/ja
Priority to US15/325,161 priority patent/US10870920B2/en
Priority to TW104122933A priority patent/TWI719940B/zh
Publication of JP2016023324A publication Critical patent/JP2016023324A/ja
Publication of JP2016023324A5 publication Critical patent/JP2016023324A5/ja
Application granted granted Critical
Publication of JP6446881B2 publication Critical patent/JP6446881B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K11/00—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves
    • F16K11/10—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves with two or more closure members not moving as a unit
    • F16K11/20—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves with two or more closure members not moving as a unit operated by separate actuating members
    • F16K11/22—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves with two or more closure members not moving as a unit operated by separate actuating members with an actuating member for each valve, e.g. interconnected to form multiple-way valves
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K27/00—Construction of housing; Use of materials therefor
    • F16K27/003—Housing formed from a plurality of the same valve elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87571—Multiple inlet with single outlet
    • Y10T137/87652—With means to promote mixing or combining of plural fluids
    • Y10T137/8766—With selectively operated flow control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87571—Multiple inlet with single outlet
    • Y10T137/87676—With flow control
    • Y10T137/87684—Valve in each inlet

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014147035A 2014-07-17 2014-07-17 ガス供給装置及びバルブ装置 Active JP6446881B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014147035A JP6446881B2 (ja) 2014-07-17 2014-07-17 ガス供給装置及びバルブ装置
CN201580039064.5A CN106661730B (zh) 2014-07-17 2015-07-06 气体供给装置和阀装置
PCT/JP2015/003380 WO2016009608A1 (ja) 2014-07-17 2015-07-06 ガス供給装置及びバルブ装置
US15/325,161 US10870920B2 (en) 2014-07-17 2015-07-06 Gas supply device and valve device
KR1020177000739A KR101923834B1 (ko) 2014-07-17 2015-07-06 가스 공급 장치 및 밸브 장치
TW104122933A TWI719940B (zh) 2014-07-17 2015-07-15 氣體供給裝置及閥裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014147035A JP6446881B2 (ja) 2014-07-17 2014-07-17 ガス供給装置及びバルブ装置

Publications (3)

Publication Number Publication Date
JP2016023324A JP2016023324A (ja) 2016-02-08
JP2016023324A5 JP2016023324A5 (https=) 2017-07-20
JP6446881B2 true JP6446881B2 (ja) 2019-01-09

Family

ID=55078119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014147035A Active JP6446881B2 (ja) 2014-07-17 2014-07-17 ガス供給装置及びバルブ装置

Country Status (6)

Country Link
US (1) US10870920B2 (https=)
JP (1) JP6446881B2 (https=)
KR (1) KR101923834B1 (https=)
CN (1) CN106661730B (https=)
TW (1) TWI719940B (https=)
WO (1) WO2016009608A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101693145B1 (ko) * 2016-03-24 2017-01-04 고강익 가스 히팅 장치 및 이를 가지는 프로세스 챔버
JP6748586B2 (ja) * 2016-07-11 2020-09-02 東京エレクトロン株式会社 ガス供給システム、基板処理システム及びガス供給方法
JP6900640B2 (ja) * 2016-08-03 2021-07-07 東京エレクトロン株式会社 ガス供給装置及びガス供給方法
JP6851173B2 (ja) * 2016-10-21 2021-03-31 東京エレクトロン株式会社 成膜装置および成膜方法
JP7002847B2 (ja) 2017-03-15 2022-01-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR102065243B1 (ko) 2017-05-01 2020-01-10 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치
WO2019152486A1 (en) * 2018-01-31 2019-08-08 Lam Research Corporation Manifold valve for multiple precursors
JP7134020B2 (ja) 2018-08-17 2022-09-09 東京エレクトロン株式会社 バルブ装置、処理装置、および制御方法
JP7089987B2 (ja) * 2018-08-22 2022-06-23 株式会社日本製鋼所 原子層堆積装置
CN111101116B (zh) * 2018-10-25 2023-08-18 北京北方华创微电子装备有限公司 工艺气体传输装置、原子层沉积方法及沉积设备
JP7259281B2 (ja) * 2018-11-21 2023-04-18 東京エレクトロン株式会社 基板処理装置、基板処理システム及び基板処理方法
JP6966499B2 (ja) * 2019-03-06 2021-11-17 Ckd株式会社 ガス供給ユニット及びガス供給方法
KR102738105B1 (ko) 2019-08-07 2024-12-04 주성엔지니어링(주) 가스 유입 장치 및 이를 이용한 기판 처리 장치
CN110486937B (zh) * 2019-08-23 2021-06-08 东台宏仁气体有限公司 一种氮气加热装置
JP7226222B2 (ja) * 2019-09-24 2023-02-21 東京エレクトロン株式会社 ガス供給装置及びガス供給方法
KR20220013736A (ko) * 2020-07-27 2022-02-04 주성엔지니어링(주) 기판처리장치용 블록밸브 및 기판처리장치
KR102212434B1 (ko) * 2020-11-13 2021-02-04 (주)한빛산업 방향제어 유압밸브 및 이를 포함하는 시스템
CN115523327B (zh) * 2021-06-25 2025-08-08 浙江三花汽车零部件有限公司 驱动装置和控制阀
JP7614995B2 (ja) * 2021-09-21 2025-01-16 キオクシア株式会社 半導体製造装置、半導体装置の製造方法および成膜方法
KR102425991B1 (ko) 2022-04-05 2022-07-29 주식회사 한별 Pv 모니터링 시스템
WO2025174847A1 (en) * 2024-02-16 2025-08-21 Lam Research Corporation Apparatus and system for flow control and tuning in semiconductor processing

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2837282A (en) * 1956-06-08 1958-06-03 American Radiator & Standard Water mixing valve
US4991625A (en) * 1989-12-11 1991-02-12 Manganaro Paul R Multiple stream fluid mixing and dispensing apparatus
US5181538A (en) * 1989-12-11 1993-01-26 Manganaro Paul R Multiple stream fluid mixing and dispensing apparatus
US5614247A (en) * 1994-09-30 1997-03-25 International Business Machines Corporation Apparatus for chemical vapor deposition of aluminum oxide
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
AU2003238853A1 (en) * 2002-01-25 2003-09-02 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US20030235961A1 (en) * 2002-04-17 2003-12-25 Applied Materials, Inc. Cyclical sequential deposition of multicomponent films
US7066194B2 (en) * 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
JP4150356B2 (ja) * 2004-05-13 2008-09-17 東京エレクトロン株式会社 成膜装置及び成膜方法
JP2006327864A (ja) * 2005-05-26 2006-12-07 Nitto Denko Corp 水素発生装置及び水素発生方法
US7918938B2 (en) * 2006-01-19 2011-04-05 Asm America, Inc. High temperature ALD inlet manifold
CN101154796A (zh) 2006-09-27 2008-04-02 三菱电机株式会社 半导体发光元件
JP5569514B2 (ja) 2011-12-28 2014-08-13 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
US20140076444A1 (en) * 2012-09-20 2014-03-20 Zodiac Pool Systems, Inc. Systems, assemblies, and methods of reducing head loss in heating devices

Also Published As

Publication number Publication date
US10870920B2 (en) 2020-12-22
TW201623679A (zh) 2016-07-01
US20170183773A1 (en) 2017-06-29
TWI719940B (zh) 2021-03-01
KR20170019419A (ko) 2017-02-21
JP2016023324A (ja) 2016-02-08
CN106661730B (zh) 2019-07-09
WO2016009608A1 (ja) 2016-01-21
CN106661730A (zh) 2017-05-10
KR101923834B1 (ko) 2018-11-29

Similar Documents

Publication Publication Date Title
JP6446881B2 (ja) ガス供給装置及びバルブ装置
JP2016023324A5 (https=)
CN110121764B (zh) 衬底处理装置、反应管、半导体器件的制造方法及程序
JP4615859B2 (ja) 原子層堆積のためのガス配送装置
TW201947058A (zh) 薄膜形成方法及基底處理裝置
JP6900640B2 (ja) ガス供給装置及びガス供給方法
JP7119747B2 (ja) ガス処理装置及びガス処理方法
WO2006041169A1 (ja) 基板処理装置及び半導体装置の製造方法
KR101759791B1 (ko) 기판 처리 방법, 기판 처리 장치 및 프로그램
KR20180105587A (ko) 기판 처리 장치 및 기판 처리 방법
JP7113670B2 (ja) Ａｌｄ成膜方法およびａｌｄ成膜装置
CN115132560A (zh) 反应管、处理装置、和半导体装置的制造方法
JP2013147708A (ja) ＴｉＳｉＮ膜の成膜方法および記憶媒体
US20190385843A1 (en) Method of forming metal film and film forming apparatus
US12385136B2 (en) Apparatus for performing film forming process on substrate, and method of exhausting processing gas from apparatus for performing film forming process on substrate
JP2011216906A (ja) 基板処埋装置及び半導体装置の製造方法
US20120272900A1 (en) Lateral flow atomic layer deposition device
KR101408506B1 (ko) 성막 장치
KR101503255B1 (ko) 기판 처리 장치 및 방법
TW202527175A (zh) 半導體處理器及其供氣系統
JP2021110030A (ja) 成膜方法、成膜装置、および半導体装置の製造方法
JP2021172841A (ja) 成膜方法
JP2006066433A (ja) 基板処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170531

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170531

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171212

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20171228

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180209

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180424

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180615

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20181106

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20181119

R150 Certificate of patent or registration of utility model

Ref document number: 6446881

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250