JP6443649B1 - 銅厚膜用エッチング液 - Google Patents

銅厚膜用エッチング液 Download PDF

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Publication number
JP6443649B1
JP6443649B1 JP2018540495A JP2018540495A JP6443649B1 JP 6443649 B1 JP6443649 B1 JP 6443649B1 JP 2018540495 A JP2018540495 A JP 2018540495A JP 2018540495 A JP2018540495 A JP 2018540495A JP 6443649 B1 JP6443649 B1 JP 6443649B1
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Japan
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aminobutan
amino
methyl
ethyl
hydrogen peroxide
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Japanese (ja)
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JPWO2019180915A1 (ja
Inventor
祐二 白濱
祐二 白濱
真 着能
真 着能
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
JP2018540495A 2018-03-23 2018-03-23 銅厚膜用エッチング液 Active JP6443649B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2018/011695 WO2019180915A1 (ja) 2018-03-23 2018-03-23 銅厚膜用エッチング液

Publications (2)

Publication Number Publication Date
JP6443649B1 true JP6443649B1 (ja) 2018-12-26
JPWO2019180915A1 JPWO2019180915A1 (ja) 2020-04-30

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ID=64899438

Family Applications (1)

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JP2018540495A Active JP6443649B1 (ja) 2018-03-23 2018-03-23 銅厚膜用エッチング液

Country Status (4)

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JP (1) JP6443649B1 (zh)
CN (3) CN118223024A (zh)
TW (1) TWI678435B (zh)
WO (1) WO2019180915A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210036633A (ko) * 2019-09-26 2021-04-05 주식회사 엘지화학 금속막 식각액 조성물 및 이를 이용한 금속막의 식각방법
CN115287657A (zh) * 2022-07-09 2022-11-04 南通群安电子材料有限公司 用于清铜牙的蚀刻药水
CN116240547A (zh) * 2022-12-25 2023-06-09 湖北兴福电子材料股份有限公司 一种铜蚀刻液及其制备方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110820000B (zh) * 2019-11-25 2021-05-04 江南大学 一种环保型铜清洗剂及其制备方法
CN110904456B (zh) * 2019-12-28 2022-01-14 上海天承化学有限公司 一种铜蚀刻液及其制备方法和应用
CN111647889A (zh) * 2020-05-27 2020-09-11 湖北兴福电子材料有限公司 一种蚀刻速率稳定的铜蚀刻液
JP2021195572A (ja) * 2020-06-09 2021-12-27 メック株式会社 エッチング剤およびエッチング方法
CN112981405B (zh) * 2021-02-23 2022-11-15 江苏艾森半导体材料股份有限公司 一种钛钨蚀刻液及其制备方法和应用
CN113215579B (zh) * 2021-03-11 2024-01-16 中国科学院近代物理研究所 一种射频四级场加速腔体的表面处理方法
CN113079628A (zh) * 2021-03-30 2021-07-06 东莞市科佳电路有限公司 一种手机震动马达pcb用电阻铜箔材料的加工方法
CN113445052A (zh) * 2021-07-28 2021-09-28 南通群安电子材料有限公司 适用于msap制程的差异性蚀刻药水
CN114016031B (zh) * 2021-10-22 2024-05-17 深圳市松柏实业发展有限公司 快速蚀刻液及其制备方法
CN114318340B (zh) * 2021-12-22 2023-09-29 惠州达诚微电子材料有限公司 一种蚀刻液组合物及其制备方法
WO2024038697A1 (ja) * 2022-08-19 2024-02-22 株式会社Adeka 組成物、エッチング方法、及び積層体の製造方法
CN115074734B (zh) * 2022-08-22 2022-11-08 深圳市板明科技股份有限公司 一种铝基材线路板用减铜添加剂及其制备方法和使用方法
CN115679321A (zh) * 2022-10-10 2023-02-03 深圳新宙邦科技股份有限公司 一种金属蚀刻液
CN115948745A (zh) * 2022-12-28 2023-04-11 武汉迪赛环保新材料股份有限公司 一种用于tft-lcd面板的蚀刻液及其在蚀刻多层含合金层的铜制程面板中的应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06192855A (ja) * 1992-12-24 1994-07-12 Tokai Denka Kogyo Kk 銅溶解剤
WO2011099624A1 (ja) * 2010-02-15 2011-08-18 三菱瓦斯化学株式会社 銅層及びモリブデン層を含む多層薄膜用エッチング液
JP2017031502A (ja) * 2015-08-03 2017-02-09 三菱瓦斯化学株式会社 銅層およびチタン層を含む多層薄膜をエッチングするためのエッチング液およびこれを用いたエッチング方法、並びに該エッチング方法を用いて得られた基板
CN106929853A (zh) * 2015-12-29 2017-07-07 达兴材料股份有限公司 蚀刻液组合物及应用它的蚀刻方法
JP6167444B1 (ja) * 2016-09-09 2017-07-26 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9365770B2 (en) * 2011-07-26 2016-06-14 Mitsubishi Gas Chemical Company, Inc. Etching solution for copper/molybdenum-based multilayer thin film
JP5866566B2 (ja) * 2014-04-25 2016-02-17 パナソニックＩｐマネジメント株式会社 モリブデンと銅を含む多層膜用エッチング液とエッチング濃縮液およびエッチング方法
JP6657770B2 (ja) * 2014-11-27 2020-03-04 三菱瓦斯化学株式会社 液体組成物およびこれを用いたエッチング方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06192855A (ja) * 1992-12-24 1994-07-12 Tokai Denka Kogyo Kk 銅溶解剤
WO2011099624A1 (ja) * 2010-02-15 2011-08-18 三菱瓦斯化学株式会社 銅層及びモリブデン層を含む多層薄膜用エッチング液
JP2017031502A (ja) * 2015-08-03 2017-02-09 三菱瓦斯化学株式会社 銅層およびチタン層を含む多層薄膜をエッチングするためのエッチング液およびこれを用いたエッチング方法、並びに該エッチング方法を用いて得られた基板
CN106929853A (zh) * 2015-12-29 2017-07-07 达兴材料股份有限公司 蚀刻液组合物及应用它的蚀刻方法
JP6167444B1 (ja) * 2016-09-09 2017-07-26 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210036633A (ko) * 2019-09-26 2021-04-05 주식회사 엘지화학 금속막 식각액 조성물 및 이를 이용한 금속막의 식각방법
KR102693459B1 (ko) 2019-09-26 2024-08-07 주식회사 엘지화학 금속막 식각액 조성물 및 이를 이용한 금속막의 식각방법
CN115287657A (zh) * 2022-07-09 2022-11-04 南通群安电子材料有限公司 用于清铜牙的蚀刻药水
CN116240547A (zh) * 2022-12-25 2023-06-09 湖北兴福电子材料股份有限公司 一种铜蚀刻液及其制备方法
CN116240547B (zh) * 2022-12-25 2024-03-12 湖北兴福电子材料股份有限公司 一种铜蚀刻液及其制备方法

Also Published As

Publication number Publication date
CN118223024A (zh) 2024-06-21
WO2019180915A1 (ja) 2019-09-26
CN118223023A (zh) 2024-06-21
TW201940742A (zh) 2019-10-16
TWI678435B (zh) 2019-12-01
JPWO2019180915A1 (ja) 2020-04-30
CN109415818A (zh) 2019-03-01

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