JP6435577B2 - 蛍光x線分析装置 - Google Patents
蛍光x線分析装置 Download PDFInfo
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- JP6435577B2 JP6435577B2 JP2018526963A JP2018526963A JP6435577B2 JP 6435577 B2 JP6435577 B2 JP 6435577B2 JP 2018526963 A JP2018526963 A JP 2018526963A JP 2018526963 A JP2018526963 A JP 2018526963A JP 6435577 B2 JP6435577 B2 JP 6435577B2
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- 238000004876 x-ray fluorescence Methods 0.000 title claims description 25
- 238000005259 measurement Methods 0.000 claims description 119
- 238000004458 analytical method Methods 0.000 claims description 29
- 238000004445 quantitative analysis Methods 0.000 claims description 14
- 238000001228 spectrum Methods 0.000 claims description 9
- 238000002441 X-ray diffraction Methods 0.000 claims description 8
- 238000012937 correction Methods 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000011088 calibration curve Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 12
- 239000006185 dispersion Substances 0.000 description 9
- 238000000691 measurement method Methods 0.000 description 8
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- 238000000926 separation method Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 229910052500 inorganic mineral Inorganic materials 0.000 description 4
- 239000011707 mineral Substances 0.000 description 4
- 238000004611 spectroscopical analysis Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 238000012886 linear function Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002083 X-ray spectrum Methods 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
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- 239000000284 extract Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
- G01N23/2076—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions for spectrometry, i.e. using an analysing crystal, e.g. for measuring X-ray fluorescence spectrum of a sample with wavelength-dispersion, i.e. WDXFS
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/076—X-ray fluorescence
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- Crystallography & Structural Chemistry (AREA)
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- Analysing Materials By The Use Of Radiation (AREA)
Description
Claims (8)
- 試料に1次X線を照射するX線源と、
前記試料から発生した2次X線を分光する分光素子と、
前記2次X線の強度を測定するエネルギー分散型の検出器と、
前記分光素子を前記2次X線の経路から退避する退避機構と、
前記退避機構により前記分光素子が退避された状態で前記2次X線を測定する副測定領域と、前記分光素子に分光された前記2次X線を測定する主測定領域と、の間で前記検出器を連続的に移動するとともに、前記主測定領域において前記分光素子に分光された前記2次X線が前記検出器に入射するように前記分光素子の角度を変更する走査機構と、
前記副測定領域で測定された前記2次X線のバックグラウンド強度と、前記主測定領域で測定された前記分光素子に分光された前記2次X線のバックグラウンド強度と、の比率を予め記憶する記憶装置と、
前記副測定領域における測定強度に含まれるバックグラウンド強度を波形分離して算出するとともに、前記主測定領域における分析線の測定強度から、前記分析線のエネルギーに対応する前記算出されたバックグラウンド強度に前記比率を乗じた値を差し引く補正を行い、定量分析を行う演算装置と、
を有する蛍光X線分析装置であって、
前記走査機構が前記副測定領域と前記主測定領域の間で前記検出器を同じ軸を中心に連続的に回転移動することで、前記主測定領域における測定に用いる前記検出器及び前記走査機構と、前記副測定領域における測定に用いる前記検出器及び前記走査機構と、を共有することを特徴とする蛍光X線分析装置。 - 前記走査機構は、前記副測定領域において、前記試料から発生した前記2次X線が直接入射される位置に前記検出器を移動することを特徴とする請求項1に記載の蛍光X線分析装置。
- 前記分光素子が退避された位置に高エネルギー成分を除去する全反射ミラーをさらに有し、
前記記憶装置は、前記副測定領域で測定された前記全反射ミラーで反射された前記2次X線のバックグラウンド強度と、前記主測定領域で測定された前記分光素子に分光された前記2次X線のバックグラウンド強度と、の比率を予め記憶することを特徴とする請求項1に記載の蛍光X線分析装置。 - それぞれ異なる波長の前記2次X線を分光する複数の前記分光素子を有し、
前記記憶装置は、前記分光素子毎に異なる前記比率を記憶することを特徴とする請求項1乃至3のいずれかに記載の蛍光X線分析装置。 - 前記記憶装置は、前記2次X線のエネルギーに対応した前記比率を記憶することを特徴とする請求項1乃至4のいずれかに記載の蛍光X線分析装置。
- 前記記憶装置は、前記比率を前記2次X線のエネルギーの関数として記憶することを特徴とする請求項1乃至5のいずれかに記載の蛍光X線分析装置。
- 前記記憶装置に記憶される前記比率を測定する際に、分析対象元素を含まない標準試料を用いることを特徴とする請求項1乃至6のいずれかに記載の蛍光X線分析装置。
- 前記標準試料は、グラファイトまたはアクリルであることを特徴とする請求項7に記載の蛍光X線分析装置。
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JP2016234455 | 2016-12-01 | ||
JP2016234455 | 2016-12-01 | ||
PCT/JP2017/041896 WO2018101133A1 (ja) | 2016-12-01 | 2017-11-21 | 蛍光x線分析装置 |
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JPWO2018101133A1 JPWO2018101133A1 (ja) | 2018-11-29 |
JP6435577B2 true JP6435577B2 (ja) | 2018-12-12 |
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US (1) | US10514346B2 (ja) |
EP (1) | EP3550293B1 (ja) |
JP (1) | JP6435577B2 (ja) |
CN (1) | CN110088603B (ja) |
WO (1) | WO2018101133A1 (ja) |
Families Citing this family (12)
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US11056308B2 (en) | 2018-09-07 | 2021-07-06 | Sigray, Inc. | System and method for depth-selectable x-ray analysis |
CN114729907B (zh) * | 2019-09-03 | 2023-05-23 | 斯格瑞公司 | 用于计算机层析x射线荧光成像的系统和方法 |
US11175243B1 (en) | 2020-02-06 | 2021-11-16 | Sigray, Inc. | X-ray dark-field in-line inspection for semiconductor samples |
CN115667896B (zh) | 2020-05-18 | 2024-06-21 | 斯格瑞公司 | 使用晶体分析器和多个检测元件的x射线吸收光谱的系统和方法 |
JP6962613B1 (ja) | 2020-06-15 | 2021-11-05 | 株式会社リガク | 蛍光x線分析装置、及び、蛍光x線分析装置の制御方法 |
JP6990460B2 (ja) * | 2020-06-19 | 2022-01-12 | 株式会社リガク | 蛍光x線分析装置、判定方法及び判定プログラム |
JP2023542674A (ja) | 2020-09-17 | 2023-10-11 | シグレイ、インコーポレイテッド | X線を用いた深さ分解計測および分析のためのシステムおよび方法 |
US11686692B2 (en) | 2020-12-07 | 2023-06-27 | Sigray, Inc. | High throughput 3D x-ray imaging system using a transmission x-ray source |
JP7218958B1 (ja) | 2021-08-24 | 2023-02-07 | 株式会社リガク | X線分析装置及び波高値予測プログラム |
US11992350B2 (en) | 2022-03-15 | 2024-05-28 | Sigray, Inc. | System and method for compact laminography utilizing microfocus transmission x-ray source and variable magnification x-ray detector |
US11885755B2 (en) | 2022-05-02 | 2024-01-30 | Sigray, Inc. | X-ray sequential array wavelength dispersive spectrometer |
EP4276452B1 (en) * | 2022-05-13 | 2024-07-03 | Bruker AXS GmbH | System and method for determining mass fractions in a test sample with wave-length dispersive x-ray fluorescence spectrometers |
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JPS59214743A (ja) * | 1983-05-20 | 1984-12-04 | Jeol Ltd | X線分析装置 |
GB9519771D0 (en) * | 1995-09-28 | 1995-11-29 | Oxford Analytical Instr Ltd | X-ray fluorescence inspection apparatus and method |
JP3511826B2 (ja) | 1997-01-23 | 2004-03-29 | 株式会社島津製作所 | 蛍光x線分析装置 |
JP2000292382A (ja) * | 1999-04-12 | 2000-10-20 | Jeol Ltd | X線分析装置 |
JP2000329714A (ja) * | 1999-05-24 | 2000-11-30 | Rigaku Industrial Co | 蛍光x線分析装置 |
US6546069B1 (en) * | 2002-04-24 | 2003-04-08 | Rigaxu/Msc, Inc. | Combined wave dispersive and energy dispersive spectrometer |
JP4874697B2 (ja) * | 2006-04-14 | 2012-02-15 | 日本電子株式会社 | 電子プローブx線分析装置及びその動作方法 |
EP1978354A1 (en) | 2007-04-05 | 2008-10-08 | Panalytical B.V. | Wavelength dispersive X-ray Fluorescence Apparatus with energy dispersive detector in the form of a silicon drift detector to improve background supression |
CN106093095B (zh) * | 2016-05-30 | 2019-07-16 | 中国工程物理研究院流体物理研究所 | 一种全视场x射线荧光成像系统的成像方法 |
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- 2017-11-21 US US16/465,661 patent/US10514346B2/en active Active
- 2017-11-21 JP JP2018526963A patent/JP6435577B2/ja active Active
- 2017-11-21 CN CN201780078045.2A patent/CN110088603B/zh active Active
- 2017-11-21 EP EP17875446.1A patent/EP3550293B1/en active Active
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US20190302041A1 (en) | 2019-10-03 |
EP3550293B1 (en) | 2021-06-30 |
CN110088603B (zh) | 2020-06-09 |
JPWO2018101133A1 (ja) | 2018-11-29 |
EP3550293A1 (en) | 2019-10-09 |
EP3550293A4 (en) | 2020-02-12 |
US10514346B2 (en) | 2019-12-24 |
CN110088603A (zh) | 2019-08-02 |
WO2018101133A1 (ja) | 2018-06-07 |
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