JP4473246B2 - 蛍光x線分析装置および蛍光x線分析方法 - Google Patents
蛍光x線分析装置および蛍光x線分析方法 Download PDFInfo
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- JP4473246B2 JP4473246B2 JP2006233672A JP2006233672A JP4473246B2 JP 4473246 B2 JP4473246 B2 JP 4473246B2 JP 2006233672 A JP2006233672 A JP 2006233672A JP 2006233672 A JP2006233672 A JP 2006233672A JP 4473246 B2 JP4473246 B2 JP 4473246B2
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- hafnium
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- 238000004458 analytical method Methods 0.000 title claims description 42
- 238000004876 x-ray fluorescence Methods 0.000 title claims description 18
- 229910052735 hafnium Inorganic materials 0.000 claims description 39
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 39
- 229910052715 tantalum Inorganic materials 0.000 claims description 35
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 34
- 229910052741 iridium Inorganic materials 0.000 claims description 27
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 26
- 230000001678 irradiating effect Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 16
- 238000002441 X-ray diffraction Methods 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 25
- 229910052802 copper Inorganic materials 0.000 description 25
- 239000010949 copper Substances 0.000 description 25
- 230000001186 cumulative effect Effects 0.000 description 14
- 238000012937 correction Methods 0.000 description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000004364 calculation method Methods 0.000 description 10
- 229910000449 hafnium oxide Inorganic materials 0.000 description 10
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 229910052723 transition metal Inorganic materials 0.000 description 6
- 150000003624 transition metals Chemical class 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910017488 Cu K Inorganic materials 0.000 description 2
- 229910017541 Cu-K Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011002 quantification Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000000624 total reflection X-ray fluorescence spectroscopy Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000000333 X-ray scattering Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004454 trace mineral analysis Methods 0.000 description 1
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Description
6 第1照射手段
7 第2照射手段
8 分光手段
11 イリジウムX線管
12 X線
15 Ir−Lα線
16 Ir−Lβ線
17 第1の蛍光X線
18 第2の蛍光X線
19 検出器
20 演算手段
S 試料(半導体基板 ウエハー)
Claims (2)
- イリジウムを含むターゲットを有するX線管と、
前記X線管からのX線を分光手段でIr−Lα線に単色化し、半導体基板である試料に照射する第1照射手段と、
前記X線管からのX線を前記分光手段でIr−Lβ線に単色化し、前記試料に照射する第2照射手段と、
前記第1および第2照射手段によって照射された前記試料から発生する第1蛍光X線の強度および第2蛍光X線の強度を検出する検出器と、
前記検出器が検出する前記第1蛍光X線の強度および前記第2蛍光X線の強度に基づき前記試料のハフニウムおよび/またはタンタルの量を演算する演算手段と、
を備えた蛍光X線分析装置。 - イリジウムを含むターゲットを有するX線管からのX線を分光手段で単色化したIr−Lα線を半導体基板である試料に照射し、前記試料から発生する第1蛍光X線の強度を検出器で検出し、
前記X線管からのX線を前記分光手段で単色化したIr−Lβ線を前記試料に照射し、前記試料から発生する第2蛍光X線の強度を前記検出器で検出し、
前記検出器が検出する前記第1蛍光X線の強度および前記第2蛍光X線の強度に基づき前記試料のハフニウムおよび/またはタンタルの量を演算する蛍光X線分析方法。
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JP4473246B2 true JP4473246B2 (ja) | 2010-06-02 |
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KR101411595B1 (ko) | 2012-12-26 | 2014-06-25 | 주식회사 포스코 | 불용성 전극 내의 이리듐 코팅량 측정방법 |
JP6709377B2 (ja) * | 2016-03-30 | 2020-06-17 | 株式会社リガク | 蛍光x線分析装置および蛍光x線分析方法 |
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