JP6433439B2 - スイッチング層および中間電極層を有した抵抗性スイッチングデバイス並びにその形成方法 - Google Patents
スイッチング層および中間電極層を有した抵抗性スイッチングデバイス並びにその形成方法Info
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- JP6433439B2 JP6433439B2 JP2015560179A JP2015560179A JP6433439B2 JP 6433439 B2 JP6433439 B2 JP 6433439B2 JP 2015560179 A JP2015560179 A JP 2015560179A JP 2015560179 A JP2015560179 A JP 2015560179A JP 6433439 B2 JP6433439 B2 JP 6433439B2
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- switching
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- 238000000034 method Methods 0.000 title claims description 45
- 239000010410 layer Substances 0.000 claims description 424
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 68
- 229910052714 tellurium Inorganic materials 0.000 claims description 62
- 230000015654 memory Effects 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 44
- 229910052802 copper Inorganic materials 0.000 claims description 33
- 239000010949 copper Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 32
- 229910052709 silver Inorganic materials 0.000 claims description 31
- 239000004332 silver Substances 0.000 claims description 31
- 230000004888 barrier function Effects 0.000 claims description 28
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 23
- 150000004706 metal oxides Chemical class 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 21
- 229910021480 group 4 element Inorganic materials 0.000 claims description 20
- 229910044991 metal oxide Inorganic materials 0.000 claims description 20
- 229910052719 titanium Inorganic materials 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 15
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 10
- 229910052735 hafnium Inorganic materials 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 239000011701 zinc Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 229910001938 gadolinium oxide Inorganic materials 0.000 claims description 8
- 229940075613 gadolinium oxide Drugs 0.000 claims description 8
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 8
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 7
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052711 selenium Inorganic materials 0.000 claims description 7
- 239000011669 selenium Substances 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims 7
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000007943 implant Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 25
- 230000008569 process Effects 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 18
- 125000004429 atom Chemical group 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000000945 filler Substances 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- IAOQICOCWPKKMH-UHFFFAOYSA-N dithieno[3,2-a:3',2'-d]thiophene Chemical compound C1=CSC2=C1C(C=CS1)=C1S2 IAOQICOCWPKKMH-UHFFFAOYSA-N 0.000 description 5
- 230000008707 rearrangement Effects 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000005280 amorphization Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910003451 terbium oxide Inorganic materials 0.000 description 2
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 2
- 229940075624 ytterbium oxide Drugs 0.000 description 2
- QIHHYQWNYKOHEV-UHFFFAOYSA-N 4-tert-butyl-3-nitrobenzoic acid Chemical compound CC(C)(C)C1=CC=C(C(O)=O)C=C1[N+]([O-])=O QIHHYQWNYKOHEV-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 241000699670 Mus sp. Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- VDNSGQQAZRMTCI-UHFFFAOYSA-N sulfanylidenegermanium Chemical compound [Ge]=S VDNSGQQAZRMTCI-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
- H10N70/043—Modification of switching materials after formation, e.g. doping by implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
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Description
Claims (35)
- 第1の電位ノードに結合され、基板上に配置される第1の電極と、
前記第1の電極上に配置されるスイッチング層と、
前記スイッチング層上に配置される導電性アモルファス層と、
前記導電性アモルファス層上に配置され、かつ第2の電位ノードに結合される第2の電極とを含み、
前記導電性アモルファス層は、テルルおよび第IV族元素を含む単一の層であり、前記導電性アモルファス層の一方の面が前記スイッチング層に接し、当該一方の面と対向する他方の面が前記第2の電極に接する、抵抗性スイッチングデバイス。 - 前記導電性アモルファス層が、AlおよびCuを含まず、前記第IV族元素が、チタン、ジルコニウム、および/またはハフニウムを含む、請求項1に記載のデバイス。
- 前記導電性アモルファス層におけるテルル原子の数に対する第IV族元素の原子の数の比が、0.5:1から3:1の間である、請求項2に記載のデバイス。
- 前記導電性アモルファス層におけるテルル原子の数に対する第IV族元素原子の数の比が、0.5:1から2:1の間である、請求項2に記載のデバイス。
- 前記導電性アモルファス層におけるテルル原子の数に対する第IV族元素原子の数の比が、0.55:1から1.5:1の間である、請求項2に記載のデバイス。
- 前記スイッチング層が、酸化ガドリニウム、酸化アルミニウム、酸化ハフニウム、酸化ジルコニウム、酸化ケイ素、またはそれらの混合物を含む、請求項2に記載のデバイス。
- 前記第2の電極が、5%よりも少ない銅および銀を含み、前記スイッチング層が、0.01%よりも少ない銅および銀を含む、請求項1に記載のデバイス。
- 前記第1の電極が、タングステンおよび/またはタンタルを含み、前記第2の電極が、窒化チタンを含む、請求項1に記載のデバイス。
- 第1の電位ノードに結合され、基板上に配置される第1の電極と、
前記第1の電極上に配置されるスイッチング層と、
前記スイッチング層上に配置される導電性アモルファス層と、
前記導電性アモルファス層上に配置され、かつ第2の電位ノードに結合される第2の電極と、
前記導電性アモルファス層と前記第2の電極との間に配置され、銅、銀、金、亜鉛およびテルルに対する拡散バリアとを含み、
前記導電性アモルファス層は、テルルおよび第IV族元素を含む単一の層であり、前記導電性アモルファス層の一方の面が前記スイッチング層に接し、当該一方の面と対向する他方の面が前記拡散バリアに接する、抵抗性スイッチングデバイス。 - 第2の電極上に配置され、且つ前記第2の電極と接触する第3の電極を更に含む、請求項9に記載のデバイス。
- 前記導電性アモルファス層は、セレンおよび第IV族元素を含む、請求項1に記載のデバイス。
- 第1の電位ノードに結合され、基板上に配置される第1の電極と、
前記第1の電極上に配置され、0.01%よりも少ない銅および銀を含む酸化物スイッチング層と、
前記酸化物スイッチング層上に配置され、第2の電位ノードに結合される第2の電極と、
前記酸化物スイッチング層と前記第2の電極の間の界面とを有し、当該界面はテルルおよび第IV族金属のみを含み、前記第2の電極が5%よりも少ない銅および銀を含む、抵抗性スイッチングデバイス。 - 前記第1の電極がタングステンおよび/またはタンタルを含み、前記酸化物スイッチング層が、酸化ガドリニウム、酸化アルミニウム、酸化ハフニウム、酸化ジルコニウム、酸化ケイ素、またはそれらの混合物を含む、請求項12に記載のデバイス。
- 前記第2の電極が窒化チタンを含む、請求項12に記載のデバイス。
- 前記第2の電極が前記界面にチタン層を含む、請求項14に記載のデバイス。
- 前記第2の電極が窒化チタンを含む、請求項12に記載のデバイス。
- 抵抗性スイッチングデバイスを形成する方法であって、
基板上に第1の絶縁層を形成し、
前記第1の絶縁層内に第1の電極を形成し、
前記第1の電極上に金属酸化物層を形成し、
前記金属酸化物層上に前記金属酸化物層と接触するテルル層を形成し、当該テルル層はテルルおよび第IV族元素を含む単一の層であり、
前記テルル層上に配置され、且つ前記テルル層と接触する第2の電極を形成し、当該第2の電極は第2の電位ノードに結合される、
方法。 - 抵抗性スイッチングデバイスを形成する方法であって、
基板上に第1の絶縁層を形成し、
前記第1の絶縁層内に第1の電極を形成し、
前記第1の電極上に金属酸化物層を形成し、
前記金属酸化物層上に前記金属酸化物層と接触するテルル層を形成し、当該テルル層はテルルおよび第IV族元素を含む単一の層であり、
前記テルル層上に銅および銀に対する拡散バリアを形成し、
前記拡散バリア上に第2の電極を形成し、当該第2の電極は第2の電位ノードに結合され、
前記第2の電極が5%よりも少ない銅および銀を含む、
方法。 - 前記第2の電極上に第3の電極を形成することを更に含む、請求項17に記載の方法。
- 前記テルル層が、チタン、ジルコニウム、および/またはハフニウムを含む、請求項17に記載の方法。
- 前記テルル層における原子百分率によるテルルの総量が、25%から70%である、請求項17に記載の方法。
- テルル層を形成することが、テルルを第IV族元素と同時スパッタリングすることを含み、前記第IV族元素が、チタン、ジルコニウムまたはハフニウムを含む、請求項17に記載の方法。
- 前記同時スパッタリングが、前記テルルおよび前記第IV族元素のための異なるソースを使用する、請求項22に記載の方法。
- テルル層を形成することが、前記テルルおよび第IV族元素のための共通のソースを使用してスパッタリングすることを含む、請求項17に記載の方法。
- テルル層を形成することが、アモルファス層を堆積することを含む、請求項17に記載の方法。
- テルル層を形成することが、結晶層を堆積することと、打ち込みを用いて前記結晶層をアモルファス化することを含む、請求項17に記載の方法。
- テルル層を形成することが、テルルを含む層と、第IV族元素を含む層とを堆積することを含む、請求項17に記載の方法。
- 前記テルル層をアニールして、テルルおよび第IV族元素を含むアモルファス層を形成することを更に含む、請求項27に記載の方法。
- 第1の端子および第1の電位ノードに結合された第2の端子を有し、基板上に配置されるアクセスデバイスと、
抵抗スイッチングメモリデバイスであって、
前記第1の端子に結合され、前記基板上に配置される第1の電極と、
前記第1の電極上に配置され、0.01%よりも少ない銅および銀を含むスイッチング層と、
前記スイッチング層上に配置され、テルルおよび第IV族元素を含む単一の層からなる第1の導電層と、
前記第1の導電層上に配置され、且つ第2の電位ノードに結合され、さらに5%よりも少ない銅および銀を含む第2の電極とを含み、前記第1の導電層の一方の面が前記スイッチング層に接触し、当該一方の面と対向する他方の面が前記第2の電極に接触する、抵抗スイッチングメモリデバイスと
を含む、メモリセル。 - 前記アクセスデバイスがトランジスタを含む、請求項29に記載のメモリセル。
- 前記アクセスデバイスが抵抗性スイッチングデバイスを含み、当該抵抗性スイッチングデバイスが、
前記基板上に配置された底部電極と、
前記底部電極上に配置され、0.01%よりも少ない銅および銀を含む金属酸化物層と、
前記金属酸化物層上に配置され、テルルおよび第IV族元素を含む単一の層からなる第2の導電層と、
前記第2の導電層上に配置され、5%よりも少ない銅および銀を含む上部電極と
を含む、請求項29に記載のメモリセル。 - 前記第1の導電層がアモルファス層であり、前記第2の導電層がアモルファス層である、請求項31に記載のメモリセル。
- 前記第1の導電層が、チタン、ジルコニウムまたはハフニウムを含む、請求項29に記載のメモリセル。
- 前記スイッチング層が、酸化ガドリニウム、酸化アルミニウム、酸化ハフニウム、酸化ジルコニウム、酸化ケイ素またはその混合物を含む、請求項29に記載のメモリセル。
- 第1の端子および第1の電位ノードに結合された第2の端子を有し、基板上に配置されるアクセスデバイスと、
抵抗スイッチングメモリデバイスであって、
前記第1の端子に結合され、前記基板上に配置される第1の電極と、
前記第1の電極上に配置され、0.01%よりも少ない銅および銀を含むスイッチング層と、
前記スイッチング層上に配置され、テルルおよび第IV族元素を含む単一の層からなる第1の導電層と、
前記第1の導電層上に配置され、且つ第2の電位ノードに結合され、さらに5%よりも少ない銅および銀を含む第2の電極と、
前記第2の電極と前記第1の導電層との間に配置され、銅および銀に対する拡散バリアとを含み、
前記第1の導電層の一方の面が前記スイッチング層に接触し、当該一方の面と対向する他方の面が前記拡散バリアに接触する、抵抗スイッチングメモリデバイスと
を含む、メモリセル。
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US20160118585A1 (en) | 2016-04-28 |
TWI619242B (zh) | 2018-03-21 |
TW201445718A (zh) | 2014-12-01 |
WO2014137485A1 (en) | 2014-09-12 |
US20140246641A1 (en) | 2014-09-04 |
CN104969374B (zh) | 2018-07-24 |
JP6708722B2 (ja) | 2020-06-10 |
JP2016512390A (ja) | 2016-04-25 |
CN104969374A (zh) | 2015-10-07 |
US9252359B2 (en) | 2016-02-02 |
JP2019050403A (ja) | 2019-03-28 |
US9818939B2 (en) | 2017-11-14 |
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