JP6424738B2 - 発光装置および発光装置の製造方法 - Google Patents

発光装置および発光装置の製造方法 Download PDF

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Publication number
JP6424738B2
JP6424738B2 JP2015106547A JP2015106547A JP6424738B2 JP 6424738 B2 JP6424738 B2 JP 6424738B2 JP 2015106547 A JP2015106547 A JP 2015106547A JP 2015106547 A JP2015106547 A JP 2015106547A JP 6424738 B2 JP6424738 B2 JP 6424738B2
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light emitting
light
covering
emitting element
film
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JP2016219743A5 (enExample
JP2016219743A (ja
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鈴木　亮
亮 鈴木
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Nichia Corp
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Nichia Corp
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Priority to JP2015106547A priority Critical patent/JP6424738B2/ja
Priority to US15/164,360 priority patent/US9941453B2/en
Publication of JP2016219743A publication Critical patent/JP2016219743A/ja
Publication of JP2016219743A5 publication Critical patent/JP2016219743A5/ja
Priority to US15/908,577 priority patent/US10629789B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

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JP2015106547A 2015-05-26 2015-05-26 発光装置および発光装置の製造方法 Active JP6424738B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015106547A JP6424738B2 (ja) 2015-05-26 2015-05-26 発光装置および発光装置の製造方法
US15/164,360 US9941453B2 (en) 2015-05-26 2016-05-25 Light emitting device and method for manufacturing the same
US15/908,577 US10629789B2 (en) 2015-05-26 2018-02-28 Light emitting device and method for manufacturing the same

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Application Number Priority Date Filing Date Title
JP2015106547A JP6424738B2 (ja) 2015-05-26 2015-05-26 発光装置および発光装置の製造方法

Related Child Applications (1)

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JP2018200263A Division JP6696550B2 (ja) 2018-10-24 2018-10-24 発光装置

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JP2016219743A JP2016219743A (ja) 2016-12-22
JP2016219743A5 JP2016219743A5 (enExample) 2018-01-25
JP6424738B2 true JP6424738B2 (ja) 2018-11-21

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JP (1) JP6424738B2 (enExample)

Cited By (1)

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KR102898274B1 (ko) 2020-06-30 2025-12-15 희성전자 주식회사 광 발생 장치

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JP6582382B2 (ja) * 2014-09-26 2019-10-02 日亜化学工業株式会社 発光装置の製造方法
US10199533B2 (en) 2015-12-21 2019-02-05 Nichia Corporation Method of manufacturing light emitting device
JP6711021B2 (ja) * 2016-03-02 2020-06-17 日亜化学工業株式会社 発光装置及びその製造方法
US11038086B2 (en) * 2016-03-07 2021-06-15 Semicon Light Co., Ltd. Semiconductor light-emitting element and manufacturing method therefor
US10522728B2 (en) * 2017-01-26 2019-12-31 Maven Optronics Co., Ltd. Beveled chip reflector for chip-scale packaging light-emitting device and manufacturing method of the same
CN108365075B (zh) * 2017-01-26 2020-12-18 行家光电股份有限公司 具有斜面晶片反射结构的晶片级封装发光装置及其制造方法
EP3396725B1 (en) 2017-04-25 2021-01-13 Nichia Corporation Light emitting device and method of manufacturing same
CN108878625B (zh) 2017-05-12 2023-05-05 日亚化学工业株式会社 发光装置及其制造方法
JP6696521B2 (ja) 2017-05-12 2020-05-20 日亜化学工業株式会社 発光装置及びその製造方法
JP6966691B2 (ja) * 2017-05-31 2021-11-17 日亜化学工業株式会社 発光装置及び発光装置の製造方法
JP6806042B2 (ja) 2017-11-28 2021-01-06 日亜化学工業株式会社 発光装置
JP7235944B2 (ja) 2018-02-21 2023-03-09 日亜化学工業株式会社 発光装置及び発光装置の製造方法
KR102527384B1 (ko) 2018-03-09 2023-04-28 삼성전자주식회사 발광 소자 패키지 및 그 제조 방법
JP6760321B2 (ja) 2018-03-20 2020-09-23 日亜化学工業株式会社 発光装置および発光装置の製造方法
JP6848942B2 (ja) * 2018-08-22 2021-03-24 日亜化学工業株式会社 発光モジュールの製造方法
JP7208478B2 (ja) * 2018-09-28 2023-01-19 日亜化学工業株式会社 発光装置及びその製造方法
JP7364858B2 (ja) * 2019-06-13 2023-10-19 日亜化学工業株式会社 発光装置
JP2021136119A (ja) * 2020-02-26 2021-09-13 日亜化学工業株式会社 発光モジュールの製造方法
WO2024071218A1 (ja) * 2022-09-28 2024-04-04 日亜化学工業株式会社 発光装置および発光装置の製造方法

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JP5777952B2 (ja) 2011-06-28 2015-09-09 シチズン電子株式会社 発光装置とその製造方法
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JP6523597B2 (ja) * 2013-09-30 2019-06-05 日亜化学工業株式会社 発光装置
JP2015122452A (ja) 2013-12-25 2015-07-02 サンケン電気株式会社 発光装置
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JP6447018B2 (ja) * 2014-10-31 2019-01-09 日亜化学工業株式会社 発光装置及び発光装置の製造方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102898274B1 (ko) 2020-06-30 2025-12-15 희성전자 주식회사 광 발생 장치

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JP2016219743A (ja) 2016-12-22
US10629789B2 (en) 2020-04-21
US20180190886A1 (en) 2018-07-05
US9941453B2 (en) 2018-04-10
US20160351765A1 (en) 2016-12-01

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