JP6397029B2 - エピ予熱リング - Google Patents

エピ予熱リング Download PDF

Info

Publication number
JP6397029B2
JP6397029B2 JP2016541986A JP2016541986A JP6397029B2 JP 6397029 B2 JP6397029 B2 JP 6397029B2 JP 2016541986 A JP2016541986 A JP 2016541986A JP 2016541986 A JP2016541986 A JP 2016541986A JP 6397029 B2 JP6397029 B2 JP 6397029B2
Authority
JP
Japan
Prior art keywords
ring
semicircular portion
processing chamber
substrate support
semicircle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016541986A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016530730A5 (enExample
JP2016530730A (ja
Inventor
カルティーク シャー，
カルティーク シャー，
シュー−クワン ラウ，
シュー−クワン ラウ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2016530730A publication Critical patent/JP2016530730A/ja
Publication of JP2016530730A5 publication Critical patent/JP2016530730A5/ja
Application granted granted Critical
Publication of JP6397029B2 publication Critical patent/JP6397029B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y10T428/218—Aperture containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
JP2016541986A 2013-09-16 2014-08-19 エピ予熱リング Active JP6397029B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361878420P 2013-09-16 2013-09-16
US61/878,420 2013-09-16
US14/461,137 US10047457B2 (en) 2013-09-16 2014-08-15 EPI pre-heat ring
US14/461,137 2014-08-15
PCT/US2014/051603 WO2015038294A1 (en) 2013-09-16 2014-08-19 Epi pre-heat ring

Publications (3)

Publication Number Publication Date
JP2016530730A JP2016530730A (ja) 2016-09-29
JP2016530730A5 JP2016530730A5 (enExample) 2017-09-28
JP6397029B2 true JP6397029B2 (ja) 2018-09-26

Family

ID=52666151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016541986A Active JP6397029B2 (ja) 2013-09-16 2014-08-19 エピ予熱リング

Country Status (6)

Country Link
US (1) US10047457B2 (enExample)
JP (1) JP6397029B2 (enExample)
KR (1) KR102165518B1 (enExample)
CN (1) CN105518839B (enExample)
TW (1) TWI639194B (enExample)
WO (1) WO2015038294A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11414759B2 (en) 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member
WO2017059114A1 (en) * 2015-10-01 2017-04-06 Sunedison Semiconductor Limited Cvd apparatus
US10153215B2 (en) 2016-08-04 2018-12-11 Kla-Tencor Corporation Oven enclosure for optical components with integrated purge gas pre-heater
US10752991B2 (en) * 2017-02-06 2020-08-25 Applied Materials, Inc. Half-angle nozzle
JP6330941B1 (ja) * 2017-03-07 2018-05-30 株式会社Sumco エピタキシャル成長装置およびプリヒートリングならびにそれらを用いたエピタキシャルウェーハの製造方法
US11417562B2 (en) * 2017-06-23 2022-08-16 Jusung Engineering Co., Ltd. Substrate supporting apparatus
CN109811406B (zh) * 2017-11-20 2021-09-17 北京北方华创微电子装备有限公司 石英件、工艺腔室和半导体处理设备
JP6521140B2 (ja) * 2018-04-24 2019-05-29 株式会社Sumco エピタキシャル成長装置およびプリヒートリングならびにそれらを用いたエピタキシャルウェーハの製造方法
CN111599716B (zh) * 2020-05-06 2024-06-21 北京北方华创微电子装备有限公司 用于外延生长设备的预热环以及外延生长设备
CN111850514B (zh) * 2020-06-30 2022-11-22 北京北方华创微电子装备有限公司 用于外延生长设备的进排气构件及外延生长设备
DE102021115349A1 (de) * 2020-07-14 2022-01-20 Infineon Technologies Ag Substrat-prozesskammer und prozessgasströmungsablenker zur verwendung in der prozesskammer
JP7361005B2 (ja) * 2020-09-18 2023-10-13 株式会社Kokusai Electric 基板処理装置、基板保持具、半導体装置の製造方法、及び、プログラム
US11643725B2 (en) * 2021-03-26 2023-05-09 Applied Materials, Inc. Hardware to prevent bottom purge incursion in application volume and process gas diffusion below heater
CN115704108A (zh) * 2021-08-09 2023-02-17 广州集成电路技术研究院有限公司 预热环和基板处理装置
CN113981531B (zh) * 2021-10-26 2022-10-04 江苏天芯微半导体设备有限公司 一种预热环及衬底处理设备
KR20250100693A (ko) * 2022-10-28 2025-07-03 어플라이드 머티어리얼스, 인코포레이티드 프로세스 챔버에 대한 가스 유동 개선
CN116497341B (zh) * 2023-05-12 2024-05-28 深圳市重投天科半导体有限公司 一种预热装置、外延生长设备和外延方法
US20250087506A1 (en) * 2023-09-08 2025-03-13 Applied Materials, Inc. Targeted gas delivery via side gas injection
CN119859794A (zh) * 2023-10-20 2025-04-22 应用材料公司 包括碳加热器的预热环、加热系统和处理腔室
US20250210314A1 (en) * 2023-12-20 2025-06-26 Applied Materials, Inc. Plasma injection configurations for processing chambers, and related apparatus, chamber kits, and methods
US20250341019A1 (en) * 2024-05-06 2025-11-06 Applied Materials, Inc. Envelope and isolation plate for ir transmission adjustment

Family Cites Families (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1784142A (en) * 1928-12-15 1930-12-09 Shakeproof Lock Washer Co Material strip for spring-tooth lock washers
US4163573A (en) * 1977-02-28 1979-08-07 Chiyoda Tsusho K.K. Hose fitting
US4322878A (en) * 1978-02-13 1982-04-06 Warchol Henry A Bearing components and method of making same
US5261960A (en) * 1987-06-24 1993-11-16 Epsilon Technology, Inc. Reaction chambers for CVD systems
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
US6093252A (en) * 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US6395363B1 (en) 1996-11-05 2002-05-28 Applied Materials, Inc. Sloped substrate support
US6153260A (en) * 1997-04-11 2000-11-28 Applied Materials, Inc. Method for heating exhaust gas in a substrate reactor
US6022587A (en) * 1997-05-13 2000-02-08 Applied Materials, Inc. Method and apparatus for improving film deposition uniformity on a substrate
US6635080B1 (en) * 1997-06-19 2003-10-21 Vascutek Limited Prosthesis for repair of body passages
US6013319A (en) * 1998-04-28 2000-01-11 Dietze; Gerald R. Method and apparatus for increasing deposition quality of a chemical vapor deposition system
US5916370A (en) * 1998-06-12 1999-06-29 Applied Materials, Inc. Semiconductor processing chamber having diamond coated components
US6315833B1 (en) * 1999-07-01 2001-11-13 Applied Materials, Inc. Silicon carbide sleeve for substrate support assembly
AU2001288232A1 (en) * 2000-08-10 2002-02-25 Tokyo Electron Limited Method and apparatus for tuning a plasma reactor chamber
US6399510B1 (en) * 2000-09-12 2002-06-04 Applied Materials, Inc. Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates
TW544775B (en) * 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
US6896738B2 (en) * 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
AU2002366921A1 (en) * 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
US6971835B2 (en) * 2001-12-21 2005-12-06 Sumitomo Mitsubishi Silicon Corporation Vapor-phase epitaxial growth method
JP3758579B2 (ja) 2002-01-23 2006-03-22 信越半導体株式会社 熱処理装置および熱処理方法
JP3908112B2 (ja) * 2002-07-29 2007-04-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 サセプタ、エピタキシャルウェーハ製造装置及びエピタキシャルウェーハ製造方法
US7256375B2 (en) * 2002-08-30 2007-08-14 Asm International N.V. Susceptor plate for high temperature heat treatment
US7311784B2 (en) * 2002-11-26 2007-12-25 Tokyo Electron Limited Plasma processing device
JP4379585B2 (ja) * 2003-12-17 2009-12-09 信越半導体株式会社 気相成長装置およびエピタキシャルウェーハの製造方法
JP2005183511A (ja) * 2003-12-17 2005-07-07 Shin Etsu Handotai Co Ltd 気相成長装置およびエピタキシャルウェーハの製造方法
KR100865580B1 (ko) * 2004-06-15 2008-10-28 가부시키가이샤 히다치 고쿠사이 덴키 기판처리장치 및 반도체장치의 제조방법
JP4399452B2 (ja) 2004-06-15 2010-01-13 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP2006049462A (ja) 2004-08-03 2006-02-16 Seiko Epson Corp ドライエッチング装置及び半導体装置の製造方法
JP2006140492A (ja) * 2004-11-11 2006-06-01 Samsung Electronics Co Ltd 半導体素子製造に使用される乾式クリーニング装置
KR100621777B1 (ko) * 2005-05-04 2006-09-15 삼성전자주식회사 기판 열처리 장치
JP2006319043A (ja) * 2005-05-11 2006-11-24 Hitachi High-Technologies Corp プラズマ処理装置
JP4613314B2 (ja) * 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法
ES2268974B2 (es) * 2005-06-16 2007-12-01 Universidad Politecnica De Madrid Reactor epitaxial para la produccion de obleas a gran escala.
NL1029365C2 (nl) * 2005-06-29 2007-01-02 Roy Bernardus Johannes V Aalst Een zichzelf oprichtende tent.
JP4513688B2 (ja) * 2005-08-17 2010-07-28 パナソニック株式会社 プッシュオンスイッチ
US7544270B2 (en) * 2005-11-14 2009-06-09 Infineon Technologies Ag Apparatus for processing a substrate
WO2007091638A1 (ja) * 2006-02-09 2007-08-16 Sumco Techxiv Corporation サセプタおよびエピタキシャルウェハの製造装置
KR100763332B1 (ko) * 2006-02-16 2007-10-04 삼성전자주식회사 나이프에지링 및 이를 갖는 반도체 현상설비, 반도체현상설비의 웨이퍼 저면 세정방법
JP2007250967A (ja) 2006-03-17 2007-09-27 Tokyo Electron Ltd プラズマ処理装置および方法とフォーカスリング
US7988814B2 (en) * 2006-03-17 2011-08-02 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
JP4193883B2 (ja) * 2006-07-05 2008-12-10 住友電気工業株式会社 有機金属気相成長装置
US8852349B2 (en) * 2006-09-15 2014-10-07 Applied Materials, Inc. Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects
US8951351B2 (en) * 2006-09-15 2015-02-10 Applied Materials, Inc. Wafer processing hardware for epitaxial deposition with reduced backside deposition and defects
US7897008B2 (en) * 2006-10-27 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for regional plasma control
US20080220150A1 (en) 2007-03-05 2008-09-11 Applied Materials, Inc. Microbatch deposition chamber with radiant heating
US8012259B2 (en) * 2007-03-09 2011-09-06 Hitachi Kokusai Electric, Inc. Substrate processing apparatus
US9472382B2 (en) * 2007-04-23 2016-10-18 Plasmology4, Inc. Cold plasma annular array methods and apparatus
US8067061B2 (en) * 2007-10-25 2011-11-29 Asm America, Inc. Reaction apparatus having multiple adjustable exhaust ports
US20090194024A1 (en) * 2008-01-31 2009-08-06 Applied Materials, Inc. Cvd apparatus
US8441640B2 (en) 2008-05-02 2013-05-14 Applied Materials, Inc. Non-contact substrate support position sensing system and corresponding adjustments
US8726837B2 (en) 2008-06-23 2014-05-20 Applied Materials, Inc. Semiconductor process chamber vision and monitoring system
JP5092975B2 (ja) * 2008-07-31 2012-12-05 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
TWI359635B (en) * 2008-08-07 2012-03-01 Inventec Corp Wind-guiding cover
JP5100617B2 (ja) * 2008-11-07 2012-12-19 東京エレクトロン株式会社 リング状部材及びその製造方法
US8512472B2 (en) 2008-11-13 2013-08-20 Applied Materials, Inc. Method and apparatus to enhance process gas temperature in a CVD reactor
US8298629B2 (en) * 2009-02-25 2012-10-30 Crystal Solar Incorporated High throughput multi-wafer epitaxial reactor
JP2010278166A (ja) * 2009-05-27 2010-12-09 Tokyo Electron Ltd プラズマ処理用円環状部品、及びプラズマ処理装置
JP5601794B2 (ja) * 2009-05-29 2014-10-08 株式会社東芝 プラズマエッチング装置
KR101091309B1 (ko) * 2009-08-18 2011-12-07 주식회사 디엠에스 플라즈마 식각장치
JP5604907B2 (ja) * 2010-02-25 2014-10-15 信越半導体株式会社 気相成長用半導体基板支持サセプタおよびエピタキシャルウェーハ製造装置およびエピタキシャルウェーハの製造方法
JP5410348B2 (ja) * 2010-03-26 2014-02-05 株式会社豊田中央研究所 表面処理装置
JP5597463B2 (ja) * 2010-07-05 2014-10-01 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US20120073503A1 (en) * 2010-09-24 2012-03-29 Juno Yu-Ting Huang Processing systems and apparatuses having a shaft cover
US9890455B2 (en) * 2010-10-29 2018-02-13 Applied Materials, Inc. Pre-heat ring designs to increase deposition uniformity and substrate throughput
CN105755450B (zh) * 2010-12-30 2019-03-15 维易科仪器公司 使用承载器扩展的晶圆加工
WO2012134663A2 (en) * 2011-03-16 2012-10-04 Applied Materials, Inc Method and apparatus utilizing a single lift mechanism for processing and transfer of substrates
DE102011007632B3 (de) 2011-04-18 2012-02-16 Siltronic Ag Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe
US9512520B2 (en) 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
US9347132B2 (en) 2011-04-29 2016-05-24 Applied Materials, Inc. Optical endpoint detection system
JP5377587B2 (ja) 2011-07-06 2013-12-25 東京エレクトロン株式会社 アンテナ、プラズマ処理装置及びプラズマ処理方法
US9095038B2 (en) * 2011-10-19 2015-07-28 Advanced Micro-Fabrication Equipment, Inc. Asia ICP source design for plasma uniformity and efficiency enhancement
CN103295867B (zh) * 2012-02-29 2016-12-28 细美事有限公司 等离子体边界限制器单元和用于处理基板的设备
JP5343162B1 (ja) * 2012-10-26 2013-11-13 エピクルー株式会社 エピタキシャル成長装置
US10480077B2 (en) * 2013-03-13 2019-11-19 Applied Materials, Inc. PEALD apparatus to enable rapid cycling
JP5602903B2 (ja) * 2013-03-14 2014-10-08 アプライド マテリアルズ インコーポレイテッド エピタキシャル成長による成膜方法、および、エピタキシャル成長装置

Also Published As

Publication number Publication date
KR102165518B1 (ko) 2020-10-14
KR20160055910A (ko) 2016-05-18
CN105518839A (zh) 2016-04-20
WO2015038294A1 (en) 2015-03-19
TWI639194B (zh) 2018-10-21
US10047457B2 (en) 2018-08-14
US20150075430A1 (en) 2015-03-19
CN105518839B (zh) 2019-05-28
TW201519321A (zh) 2015-05-16
JP2016530730A (ja) 2016-09-29

Similar Documents

Publication Publication Date Title
JP6397029B2 (ja) エピ予熱リング
US20160068996A1 (en) Susceptor and pre-heat ring for thermal processing of substrates
CN105164788B (zh) 具有空间分布的气体通道的气流控制衬垫
US8512472B2 (en) Method and apparatus to enhance process gas temperature in a CVD reactor
TWI646214B (zh) 在化學氣相沉積反應器中的基座的設計
JP5602903B2 (ja) エピタキシャル成長による成膜方法、および、エピタキシャル成長装置
US6476362B1 (en) Lamp array for thermal processing chamber
TWI647763B (zh) 使用測溫儀而對錐形燈頭內的燈所為之多區域控制
TWI648427B (zh) 用於交叉流動類型的熱ｃｖｄ腔室之改良的氣體活化的結構
CN105009273A (zh) 基座支撑部及包含基座支撑部的外延生长设备
TWI687538B (zh) 旋轉批量磊晶系統
TW201523771A (zh) 用於使預熱構件自定中心之裝置
US20150368830A1 (en) One-piece injector assembly and one-piece exhaust liner
KR102242975B1 (ko) 기판 처리 장치
JP6198584B2 (ja) エピタキシャル成長による成膜方法、および、エピタキシャル成長装置
JP6309252B2 (ja) エピタキシャル成長による成膜方法、および、エピタキシャル成長装置
JP2017224850A (ja) エピタキシャル成長による成膜方法、および、エピタキシャル成長装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170816

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170816

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180423

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180508

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180720

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180814

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180830

R150 Certificate of patent or registration of utility model

Ref document number: 6397029

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250