TWI647763B - 使用測溫儀而對錐形燈頭內的燈所為之多區域控制 - Google Patents

使用測溫儀而對錐形燈頭內的燈所為之多區域控制 Download PDF

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TWI647763B
TWI647763B TW106143906A TW106143906A TWI647763B TW I647763 B TWI647763 B TW I647763B TW 106143906 A TW106143906 A TW 106143906A TW 106143906 A TW106143906 A TW 106143906A TW I647763 B TWI647763 B TW I647763B
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substrate
thermal
processing apparatus
substrate processing
heat
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拉尼許喬瑟夫Ｍ
布里哈特保羅
馬瑞恩約瑟安東尼歐
古波若沙堤西
拉馬查倫巴拉蘇拉馬尼安
史林尼法森史瓦米奈森Ｔ
薩米爾梅莫特圖格魯爾
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美商應用材料股份有限公司
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Abstract

所述係一種用於處理半導體基板的方法與設備。該設備係具有光學透明的上部圓頂與下部圓頂的處理腔室。在處理過程中，處理腔室維持真空。藉由沿著處理區域外的上部圓頂流動熱控制流體以熱控制上部圓頂。熱燈被定位在靠近下部圓頂，熱感測器被設置在燈之間。燈係區域供電，控制器根據熱感測器所接收到的資料以調整供給燈區的電源。

Description

使用測溫儀而對錐形燈頭內的燈所為之多區域控制
本發明係揭露用於半導體製程的方法與設備。更具體言之，此處所揭露之實施例係關於用於磊晶法處理過程中的分區溫度控制之方法與設備。
磊晶法是一個廣泛用於半導體製程以在半導體基板上形成很薄的材料層之處理過程。這些層頻繁地界定半導體元件的若干最小特徵，且若需要晶體材料的電學性質，這些層可具有高品質的晶體結構。通常提供沉積前驅物給處理腔室，基板設置於處理腔室中，基板加熱到益於具有需要性質的材料層成長之溫度。
通常需要薄膜具有高度均勻之厚度、成分及結構。由於局部基板溫度、氣體流動以及前驅物濃度的差異，所以欲形成均勻且重現性之性質的薄膜相當有挑戰性。處理腔室一般係一可維持高度真空(通常在10托耳以下)的容器，且熱一般由定位在容器外的熱燈所提供以避免引入污染。由於腔室元件的熱吸收與發射以及感測器與腔室表面對於處理腔室內部薄膜形成條件的顯露，使得基板溫度的控制與局部層形成條件的控制複雜化。對於具有 改善溫度控制的磊晶腔室以及操作此腔室以改善均勻性及重現性的方法之需求依然存在。
本發明所述實施例提供一種基板處理設備，該基板處理設備包括了包含有透明圓頂與透明底板的真空腔室、設置在真空腔室內的基板支撐件、安置在燈頭並定位在靠近真空腔室的透明底板之複數個熱燈、設置於燈頭並定向以接收來自靠近基板支撐件區域之熱輻射的複數個熱感測器、與熱感測器位置相對之熱燈耦接的複數個電源供應器，以及根據來自熱感測器的輸入以調整電源供應的控制器。透明圓頂與透明底板可為石英材質。基板支撐件可係具有低熱質量的盤狀構件或環狀構件。
本發明所述之其他實施例提供了處理基板的方法，將基板設置於具有透明底板的腔室中，藉由來自複數個燈經由透明底板而傳輸的輻射能來加熱基板，藉由實質上與基板表面平行而橫過基板的前驅物氣體之流動以沉積一層於基板之上，使用設置在靠近透明底板的第一感測器以偵測位於基板第一區域的第一溫度，使用設置於靠近透明底板的第二感測器以偵測位於基板第二區域的第二溫度，根據第一溫度調整複數個燈的第一部分之電源，根據第二溫度調整複數個燈的第二部分之電源。接續處理過程，可移除基板，以及可提供具有氯、溴或碘的清洗氣體給腔室以移除沉積。
100‧‧‧處理腔室
106‧‧‧腔室主體
107‧‧‧燈
108‧‧‧裝載埠
109‧‧‧背側
110‧‧‧升舉銷
107‧‧‧基板支撐件
108‧‧‧基板
110‧‧‧前側
115‧‧‧下部圓頂
116‧‧‧元件側
118‧‧‧頂部熱感測器
123‧‧‧反射體
127‧‧‧入口埠
129‧‧‧上部圓頂
131‧‧‧出口埠
133‧‧‧中心軸
135‧‧‧方向
136‧‧‧熱控制空間
140‧‧‧熱輻射感測器
141‧‧‧燈泡
143‧‧‧反射體
145‧‧‧燈頭
149‧‧‧通道
157‧‧‧處理氣體區域
158‧‧‧淨化氣體區域
160‧‧‧控制器
162‧‧‧電源供應器
167‧‧‧屏蔽
200‧‧‧方法
本發明之技術特徵已簡要敘述於前，而藉由參考實施例以及所附圖式將可對前述技術特徵有更詳盡之了解。然而，值得注意的是，雖然所附圖式只繪示了本發明的典型實施例，但因本發明可承認其他等效之實施例，故不將本發明的典型實施例視為本發明範圍之限制。
圖1係依據一實施例的處理腔室之截面示意圖。
圖2係概括依據另一實施例的方法之流程圖。
在進行磊晶過程中可做基板之分區溫度控制的腔室具有了含有上部分、側部分與下部分的處理容器，上部分、側部分與下部分全由一種材料製成，當容器內部的高度真空建立時仍可維持該材料之形狀。下部分至少對於熱輻射是透明的，且熱燈被定位於一錐型燈頭結構，錐型燈頭結構與處理容器的下半部耦接於處理容器的外面。以減少進入到感測器的熱擾動及減少感測器上的材料沉積之手段將熱感測器設置於處理腔室內的不同位置。
圖1係依據一實施例的處理腔室100之截面示意圖。處理腔室100可用於處理一或更多基板，包括在基板108上表面的沉積。處理腔室100一般包括一列用於加熱的輻射加熱燈102(在其他元件之間)，設置於處理腔室100內的基板支撐件107之背側104。基板支撐件107可係如圖所示的環狀基板支撐件(該環狀基板支撐件從基板邊緣支撐基板)，碟狀或盤狀的基板支撐件，或複數根銷 (如三根銷)。基板支撐件107位於上部圓頂128與下部圓頂114間的處理腔室100內。基板108(未按比例)可被帶入處理腔室100內且經由裝載埠103而定位在基板支撐件107之上。
基板支撐件107圖示在一抬升的處理位置，但致動器(沒有圖示出來)可將基板支撐件107垂直橫移至處理位置下方的裝載位置以允許升舉銷105(lift pin)穿過基板支撐件107的孔與下部圓頂114接觸，並將基板108從基板支撐件107中抬起。接著機械臂(沒有圖示出來)可進入處理腔室100以嚙合基板108並將基板108從裝載埠103移除。基板107接著可被向上致動到處理位置以將基板108置放到基板支撐件107的前側110的上方(基板的元件側116連帶面朝上)。
當基板支撐件107設置在處理位置時，基板支撐件107將處理腔室100的內部空間分隔成處理氣體區域156(在基板上方)及淨化氣體區域158(在基板支撐件107下方)。在處理過程中，中心軸旋轉基板107以最小化熱效應並處理處理腔室100中的氣流空間異常並因此促成基板108的均勻性過程。中心軸132支撐基板支撐件107，在裝載與卸載過程中，以及在某些實例裡基板108的處理過程中，中心軸以上下方向134移動基板108。基板支撐件107通常由具有低熱質量與低熱容量的材料所形成，使得基板支撐件107所吸收與發射的能量最小化。基板支撐件107可由碳化矽或具有碳化矽塗層之石墨形 成以吸收來自燈102的輻射能以及將輻射能傳導到基板108。圖1所示之基板支撐件107係中間有開口的環以將基板向自燈102之熱輻射顯露。基板支撐件107也可係無中間開口的盤狀元件。
一般來說，上部圓頂128與下部圓頂114通常由光學透明材料(如石英)形成。上部圓頂128與下部圓頂114為薄以最小化熱記憶，厚度通常介於大約3毫米與10毫米之間，例如4毫米。上部圓頂128可由引入之熱控制流體所控制，例如冷卻氣體，熱控制流體經由入口126進入熱控制空間136並經由出口130離開。在某些實施例中，冷卻流體通過熱控制空間136的循環可減少在上部圓頂128內表面上的沉積。
一個或更多個燈(例如一排燈102)可以依指定被設置在下部圓頂114附近以及下方，當處理氣體經過時，以期望最佳的方法繞著中心軸132以加熱基板108，從而利於基板108上表面上的材料沉積。在各式實施例中，沉積在基板108上的材料可係第三族(group III)、第四族(group IV)及(或)第五族(group V)材料，或可係第三族、第四族及(或)第五族材料的摻雜物。例如，沉積材料可包括砷化鎵、氮化鎵或氮化鋁鎵。
可調整燈102以加熱基板108到溫度範圍大約攝氏200度至攝氏1200度，如大約攝氏300度至攝氏950度。燈102可包括被光學反射體143所圍繞的燈泡141。各燈102與電源分配板(沒有圖示出來)耦接，電源 經由電源分配板供應到各燈102。燈102被定位在燈頭145裡，燈頭145可在處理過程中或處理過程之後被冷卻，例如，冷卻流體被引入燈102間的通道149。部分因為燈頭145與下部圓頂114接近，燈頭145以傳導方式冷卻下部圓頂114。燈頭145也可冷卻燈壁145與反射體143之壁。如需要，燈頭145可或可不與下部圓頂114接觸。
圓形屏蔽167可選擇性設置在基板支撐件107附近且與腔室主體101的側壁耦接。除了提供預熱區給處理氣體，屏蔽167防止或最小化從燈102到基板108的元件側116之熱擾動(光擾動)的漏損。屏蔽167可由具有以CVD法塗敷碳化矽的燒結之石墨、生長的碳化矽、或是類似的不透明材料(該不透明材料抵抗處理過程與清洗氣體的化學分解)製成。
反射體122可選擇性安置在上部圓頂128外面以將從基板108輻射出的紅外線反射回基板108之上。由於反射的紅外線，藉由包含可能漏出處理腔室100的熱以改善加熱效率。反射體122可由如鋁或不鏽鋼的金屬製成。反射體122可以製造通道126以帶動用於冷卻反射體122的流體流動，如水。如需要，可用高反射性塗層(譬如金)塗敷在反射體區域上以改善反射效率。
複數個熱輻射感測器140(可係高溫計)設置在燈頭145中用來量測基板108的熱發射。熱輻射感測器140通常設置在燈頭145中的不同位置以利在處理過程 中觀察基板108的不同位置。感測從基板不同位置來的熱輻射利於比較基板108不同位置的熱能含量(如溫度)以判斷是否存在溫度異常或不均勻性。該等不均勻性可能產生薄膜形成的不均勻性，例如厚度與成分。至少使用兩個熱輻射感測器140，但可使用超過兩個。不同實施例可使用三、四、五、六、七，或更多熱輻射感測器140。
各熱輻射感測器140觀察一區域的基板108並感測一區域的基板熱態。在某些實施例中，區域可被徑向定位。例如，在旋轉基板108的實施例中，熱輻射感測器140可觀察或界定基板108中央部分的中央區域，該基板108中央部分的中央區域具有一個與基板108中心實質相同的中心，一個或多個區域環繞該中心區域及同心的區域。然而，該等區域不必係同心或徑向定位。在某些實施例中，可將區域以非徑向方式安置在基板108的不同位置。
熱輻射感測器140通常被設置在燈102之間(例如通道149中)，且通常被定向與基板108實質上正交。在某些實施例中，熱輻射感測器140被定向與基板108正交，然而在其他實施例中，熱輻射感測器140可稍微偏離正交位置。最常使用的定向角度大約在正交5度以內。
可調整熱輻射感測器140成相同波長或頻譜，或調整成不同波長或頻譜。例如，用於腔室100的基板可係組成上相同，或是腔室100可具有不同的組成定義 域。使用熱輻射感測器140調整不同波長可允許基板定義域的監控，該等基板定義域具有不同組成及回應不同熱能之發射。熱輻射感測器140通常調整到紅外線波長，如大約4微米。
頂部熱感測器118可設置在反射體122中以監控上部圓頂128的熱態，如需要，或是從與熱輻射感測器140相對的視角以監控基板108的熱態。如此監控可用於比較從熱輻射感測器140所接收的資料，例如用於判斷從熱輻射感測器140所接收之資料是否存在錯誤。在某些情況下，頂部熱感測器118可係具有一個個別感測器以上的一組感測器。因此，腔室100可具有一個或更多的感測器以設置來接收由基板第一側所發射的輻射以及具有一個或更多的感測器以設置來接收由相對於基板第一側的基板第二側所發射的輻射。
控制器160接收來自熱輻射感測器140的資料並根據該資料分別調整傳送到各燈102或個別群組的燈或燈區的電源。控制器160可包括電源供應器162，電源供應器162獨立地供電給各個燈或燈區。控制器160可以依所需要之溫度分佈配置並與接收自熱輻射感測器140的資料比較，控制器160調整給燈和(或)燈區的電源以使觀測所得之熱資料與所需要之熱分佈相符合。在腔室效能隨著時間而緩慢改變的情況下，控制器160亦可調整給燈和(或)燈區的電源使一基板的熱處理與另一基板的熱處理相符合。
圖2係概括根據另一實施例之方法200的流程圖。在202，基板被定位在處理腔室中的基板支撐件上方。對於熱輻射，基板支撐件係實質上透明且具有低熱質量。熱燈被定位以提供熱給基板。
在204，處理氣體被引入至處理腔室，且處理腔室的氣壓被設定在大約0.01托耳至10托耳之間。處理氣體可係任一氣體，該氣體會在基板上形成一層。處理氣體可包含第四族(group IV)前驅物及(或)第三族(group III)與第五族(group V)前驅物，從中，可形成第四族材料(如矽或鍺)或第三族(第五族)化合物材料(如氮鋁化合物)。亦可使用這些前驅物的混合物。處理氣體通常與無反應的稀釋劑或載送氣體流動，且通常被提供於實質上與基板表面平行的層流或準層流。
在206，基板被加熱到大約攝氏400度與1200度之間的溫度，如大約600度。前驅物與加熱的基板表面接觸並在基板表面上形成一層。基板可旋轉以改善薄膜性質的均勻性。
在208，第一光學感測器量測基板的第一區域的第一溫度以及第二光學感測器量測基板的第二區域的第二溫度。光學感測器可係感測輻射強度的高溫計，第一區域與第二區域的基板發射該輻射。在某些實施例中，可調整接收自光學感測器的訊號以補償燈所放射以及基板所反射的背景輻射。作為溫度函數的基板反射率以及已知的自燈發射之光強度可用於模型化反射光的強度，且模型 化的強度用於調整自光學感測器的訊號以改善感測器的訊號與雜訊比。
在210，根據第一溫度與第二溫度的讀值調整給燈的電源以使得第一溫度與第一目標溫度相符合以及使得第二溫度與第二目標溫度相符合。第一與第二目標溫度可係相同或不同。例如，用以補償基板邊緣比基板中間更快的薄膜生成，可在基板中心量測第一溫度，可在基板邊緣量測第二溫度，以及調整燈的電源以在基板的中心比邊緣提供更高的基板溫度。如需要，兩個以上的區域可用於監控基板上的兩個位置以上之溫度以增加局部溫度控制的特定性。
在212，停止處理過程並從基板腔室中移除基板。在214，提供清洗氣體給腔室以移除腔室表面的沉積。沉積的移除修正了腔室元件到燈的輻射之透射率的減少以及修正了腔室元件到基板發射之透射率的減少，維持了基板到基板的薄膜性質之重現性。清洗氣體通常係包含氯、溴或碘的氣體。常使用如氯(Cl2)、溴(Br2)、碘(I2)、氯化氫(HCl)、溴化氫(HBr)及碘化氫(HI)這些氣體。當使用了元素鹵，腔室溫度可大約維持在定值或稍微增加以清洗腔室。當使用了鹵化氫，通常增加腔室溫度以補償鹵素清洗劑減少的濃度。以鹵化氫清洗時的腔室溫度可增加到大約攝氏800度和攝氏1200度之間，如大約攝氏900度。在清洗後的30秒到10分鐘，依照所需要的清理結果，可處理另一基板。
前面所述為本發明之實施例，在不背離本發明的基本範圍以及下述申請專利範圍下，可進一步設計本發明之其他及進一步的實施例，本發明範疇由以下申請專利範圍決定。

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  1. 一種基板處理設備，包括： 一真空腔室，該真空腔室包含一第一部分與一透明的第二部分；一基板支撐件，該基板支撐件設置在該真空腔室內部且在該第一部分與該第二部分之間；一燈頭，該燈頭定位在靠近該真空腔室的該第二部分；複數個熱感測器，該等熱感測器設置在該燈頭內，每一熱感測器定向以接收來自該基板支撐件的一區域的熱輻射；複數個電源供應器，該等電源供應器相對於該等熱感測器的一位置耦接到該燈頭；及一控制器，該控制器基於來自該等熱感測器的輸入來調整該等電源供應器。
  2. 如請求項1所述之基板處理設備，其中該等熱感測器接收通過該第二部分的熱輻射。
  3. 如請求項2所述之基板處理設備，其中該基板支撐件具有一低熱質量，及該等熱感測器接收由設置在該基板支撐件上的一基板所發射且由該基板支撐件所傳遞的熱輻射。
  4. 如請求項3所述之基板處理設備，進一步包括一反射體，該反射體設置在靠近該第一部分，該反射體與該第一部分共同界定一熱控制空間。
  5. 如請求項4所述之基板處理設備，進一步包括用於一熱控制流體的一入口及用於該熱控制流體的一出口，該入口設置通過該反射體且與該熱控制空間成流體連通，該出口設置通過該反射體且與該熱控制空間成流體連通。
  6. 如請求項1所述之基板處理設備，其中該第一部分與該第二部分皆係石英。
  7. 如請求項6所述之基板處理設備，進一步包括一熱感測器，該熱感測器設置在靠近該第一部分。
  8. 如請求項7所述之基板處理設備，其中該熱感測器設置在該反射體中。
  9. 如請求項1所述之基板處理設備，其中該燈頭包括複數個熱燈。
  10. 一種基板處理設備，包括： 一真空腔室，該真空腔室包含一第一部分與一透明的第二部分；一基板支撐件，該基板支撐件設置在該真空腔室內部且在該第一部分與該第二部分之間；一燈頭，該燈頭定位在靠近該真空腔室的該第二部分；複數個熱感測器，該等熱感測器設置在該燈頭內，每一熱感測器定向以接收來自該基板支撐件的一區域的熱輻射；一反射體，該反射體設置在靠近該第一部分；複數個電源供應器，該等電源供應器相對於該等熱感測器的一位置耦接到該燈頭；及一控制器，該控制器基於來自該等熱感測器的輸入來調整該等電源供應器。
  11. 如請求項10所述之基板處理設備，其中該第一部分與該第二部分皆係石英。
  12. 如請求項10所述之基板處理設備，其中該反射體具有用於一熱控制流體的一入口和一出口。
  13. 如請求項12所述之基板處理設備，進一步包括一熱感測器，該熱感測器設置在該反射體中。
  14. 如請求項10所述之基板處理設備，其中該燈頭包括複數個熱燈。
  15. 如請求項10所述之基板處理設備，其中該基板支撐件係一盤狀的構件。
  16. 如請求項10所述之基板處理設備，其中該基板支撐件包括一環狀的構件。
  17. 如請求項10所述之基板處理設備，其中每一熱感測器定向以接收來自該基板支撐件的一徑向區域的熱輻射。
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US8772055B1 (en) 2014-07-08
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TW201816894A (zh) 2018-05-01
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US9230837B2 (en) 2016-01-05
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