CN104871299A - 使用高温计对锥形灯头内的灯进行的多区域控制 - Google Patents

使用高温计对锥形灯头内的灯进行的多区域控制 Download PDF

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CN104871299A
CN104871299A CN201380068121.3A CN201380068121A CN104871299A CN 104871299 A CN104871299 A CN 104871299A CN 201380068121 A CN201380068121 A CN 201380068121A CN 104871299 A CN104871299 A CN 104871299A
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chamber
heat sensor
processing apparatus
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CN104871299B (zh
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约瑟夫·M·拉内什
保罗·布里尔哈特
乔斯·安东尼奥·马林
萨瑟施·库珀奥
巴拉苏布拉马尼恩·拉马钱德雷
斯瓦米纳坦·T·斯里尼瓦桑
穆罕默德·图格鲁利·萨米尔
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Applied Materials Inc
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Abstract

描述了一种用于处理半导体基板的方法与设备。所述设备是具有光学透明的上拱形结构与下拱形结构的处理腔室。在处理过程中，处理腔室维持真空。通过沿着处理区域外的上拱形结构流动热控制流体来热控制上拱形结构。热灯被定位成靠近下拱形结构，热传感器被设置在灯之间。灯以区域供电，控制器根据从热传感器接收的数据来调整供至各灯区的功率。

Description

使用高温计对锥形灯头内的灯进行的多区域控制
技术领域
本文揭露用于半导体处理的方法与设备。更特定而言，本文所揭露的实施方式涉及用于外延处理过程中的分区温度控制的方法与设备。
背景技术
外延是广泛用于半导体处理以在半导体基板上形成很薄的材料层的处理过程。这些层常常界定半导体器件的一些最小特征，且若需要结晶材料的电学性质，则这些层可具有高品质的晶体结构。通常提供沉积前驱物至处理腔室，基板设置于处理腔室中，基板被加热到益于具有所需性质的材料层生长的温度。
通常需要膜具有高度均匀的厚度、成分及结构。由于局部基板温度、气体流动以及前驱物浓度的变化，所以形成具有均匀和可重复性质的膜相当有挑战性。处理腔室一般是能维持高度真空(通常低于10托)的容器，且一般由定位在容器外的加热灯提供热以避免引入污染。由于腔室部件的热吸收与发射以及传感器与腔室表面暴露于处理腔室内部的膜形成条件，使得基板温度的控制与因此局部层形成条件的控制复杂化。对于具有改善温度控制的外延腔室以及操作此腔室以改善均匀性及可重复性的方法的需求依然存在。
发明内容
本文描述的实施方式提供一种基板处理设备，所述基板处理设备包括包含透明拱形结构与透明底板的真空腔室、设置在真空腔室内的基板支撑件、布置在灯头内并定位成靠近真空腔室的透明底板的多个热灯、设置于灯头内并被定向以接收来自靠近基板支撑件的区域的热辐射的多个热传感器、耦接至与热传感器的位置相关的加热灯的多个电源以及根据来自热传感器的输入来调整电源的控制器。透明拱形结构与透明底板可为石英材质。基板支撑件可以是具有低热质量的盘状构件或环状构件。
本文描述的其他实施方式提供处理基板的方法，所述方法将基板设置于具有透明底板的腔室中，通过使来自多个灯的辐射传输穿过透明底板来加热基板，通过使前驱物气体实质上平行于基板表面而流过基板来沉积层于基板上，使用设置成靠近透明底板的第一传感器来检测基板的第一区域处的第一温度，使用设置成靠近透明底板的第二传感器来检测基板的第二区域处的第二温度，根据第一温度调整供至多个灯的第一部分的功率，以及根据第二温度调整供至多个灯的第二部分的功率。在处理过程之后，可移除基板，且可提供具有氯、溴或碘的清洁气体至腔室以移除沉积物。
附图说明
为了能详细了解本发明的上述特征，可通过参照实施方式获得以上简要概述的本发明的更特定描述，一些实施方式示于附图中。然而，应注意的是，附图只绘示了本发明的典型实施方式，因此不应被视为是对本发明范围的限制，因为本发明可允许其他等同有效的实施方式。
图1是依据一个实施方式的处理腔室的示意截面图。
图2是概括依据另一实施方式的方法的流程图。
具体实施方式
在执行外延处理过程时能够对基板进行分区温度控制的腔室具有含有上部分、侧部分与下部分的处理容器，所述上部分、侧部分与下部分全由当容器内建立高真空时仍能维持其形状的材料制成。至少下部分对于热辐射是透明的，且热灯被定位于锥形灯头结构中，锥形灯头结构在处理容器的外面耦接至处理容器的下部分。用减少进入到传感器的热噪声及减少传感器上的材料沉积的手段将热传感器设置于处理容器内的不同位置。
图1是依据一实施方式的处理腔室100的示意截面图。处理腔室100可用于处理一或更多基板，包括在基板108的上表面上的材料沉积。处理腔室100通常包括在其他部件中的辐射加热灯102的阵列，所述辐射加热灯102的阵列用于加热设置于处理腔室100内的基板支撑件107的背面104。基板支撑件107可以是环状基板支撑件(如图所示，所述环状基板支撑件从基板边缘支撑基板)、碟状或盘状的基板支撑件或多根销(例如三根销)。基板支撑件107位于处理腔室100内、在上拱形结构128与下拱形结构114之间。基板108(未按比例)可通过装载端口103而被带入处理腔室100内且定位在基板支撑件107上。
基板支撑件107被图示在升高的处理位置中，但可通过致动器(未图示)将基板支撑件107垂直移动至处理位置下方的装载位置以允许升降销105(liftpin)接触下拱形结构114，穿过基板支撑件107中的孔，并将基板108从基板支撑件107中抬起。接着机械手(未图示)可进入处理腔室100以接合基板108并通过装载端口103将基板108从处理腔室100移除。基板支撑件107接着可被向上致动到处理位置以将基板108放置到基板支撑件107的正面110上(基板的器件面116朝上)。
当基板支撑件107位于处理位置时，基板支撑件107将处理腔室100的内部空间分隔成处理气体区域156(在基板之上)及净化气体区域158(在基板支撑件107之下)。在处理过程中，通过中心轴旋转基板支撑件107以最小化处理腔室100中的热和处理气体流动的空间偏差(anomaly)的影响，并因此促进基板108的均匀处理。中心轴132支撑基板支撑件107，且在基板108的装载与卸载期间，以及在一些实例中在基板108的处理期间，中心轴132沿向上与向下的方向134移动基板108。基板支撑件107通常由具有低热质量或低热容量的材料形成，使得由基板支撑件107吸收与发射的能量最小化。基板支撑件107可由碳化硅或涂覆有碳化硅的石墨形成以吸收来自灯102的辐射能并将辐射能传导到基板108。图1所示的基板支撑件107是有中心开口的环，以有助于将基板暴露至来自灯102的热辐射。基板支撑件107也可以是无中心开口的盘状构件。
一般来说，上拱形结构128与下拱形结构114通常由光学透明材料(比如石英)形成。上拱形结构128与下拱形结构114是薄的以最小化热记忆，上拱形结构128与下拱形结构114的厚度通常介于约3毫米与约10毫米之间，例如约4毫米。可通过经由入口126将热控制流体(比如冷却气体)引入热控制空间136并经由出口130排出热控制流体来热控制上拱形结构128。在一些实施方式中，循环通过热控制空间136的冷却流体可减少在上拱形结构128的内表面上的沉积。
一或更多个灯(比如灯102的阵列)可用特定的、最佳的所需方式围绕中心轴132而被设置在下拱形结构114之下与附近，以当处理气体经过时加热基板108，从而促进基板108上表面上的材料沉积。在各种实施方式中，沉积在基板108上的材料可以是第III族(group III)、第IV族(group IV)和/或第V族(groupV)材料，或者沉积在基板108上的材料可以是包括第III族、第IV族和/或第V族掺杂剂的材料。例如，沉积的材料可包括砷化镓、氮化镓或氮化铝镓。
灯102可适用于加热基板108到在约200摄氏度至约1200摄氏度范围内的温度，比如约300摄氏度至约950摄氏度。灯102可包括被光学反射体143围绕的灯泡141。每个灯102与电源分配板(未图示)耦接，通过电源分配板将功率供给到每个灯102。灯102被定位在灯头145内，灯头145可在处理期间或在处理之后被冷却，例如通过被引入至位于灯102之间的通道149的冷却流体而冷却。部分因为灯头145与下拱形结构114靠近，所以灯头145传导地冷却下拱形结构114。灯头145也可冷却灯壁和反射体143的壁。如需要，则灯头145可或可不与下拱形结构114接触。
圆形屏蔽件167可选择性地设置在基板支撑件107周围且与腔室主体101的侧壁耦接。除了为处理气体提供预热区，屏蔽件167还防止或最小化从灯102到基板108的器件面116的热噪声/光噪声的泄漏。屏蔽件167可由涂覆CVD碳化硅的烧结的石墨、生长的碳化硅或者能抵抗由处理与清洁气体造成的化学分解的类似的不透明材料制成。
反射体122可选择性地安置在上拱形结构128外面以将从基板108辐射出的红外线反射回基板108上。由于反射的红外线，因此将通过包含否则会漏出处理腔室100的热来改善加热效率。反射体122可由诸如铝或不锈钢之类的金属制成。反射体122可具有机械加工的通道126以运载用于冷却反射体122的流体流，比如水。如需要，则可通过用高反射性涂层(比如金)涂覆反射体区域来提高反射效率。
多个热辐射传感器140(可以是高温计)设置在灯头145中以用来测量基板108的热发射。传感器140通常设置在灯头145中的不同位置以便于在处理过程中观测基板108的不同位置。感测来自基板108的不同位置的热辐射有利于比较基板108的不同位置的热能含量(例如温度)以判断是否存在温度偏差或不均匀性。这些不均匀性能产生膜形成的不均匀性，比如厚度与成分。使用至少两个传感器140，但可使用多于两个传感器。不同实施方式可使用三、四、五、六、七或更多个传感器140。
每个传感器140观测基板108的一区域并感测基板108的一区域的热状态。在一些实施方式中，这些区域可被径向定位。例如，在旋转基板108的实施方式中，传感器140可观测或界定基板108的中央部分的中央区域，所述基板108的中央部分的中央区域具有与基板108的中心实质相同的中心，一个或多个区域环绕所述中央区域且与所述中央区域同心。然而，这些区域不必是同心和径向定位的。在一些实施方式中，可以非径向方式将区域布置在基板108的不同位置。
传感器140通常被设置在灯102之间(例如设置在通道149中)，且通常被定向成与基板108实质上正交。在一些实施方式中，传感器140被定向成与基板108正交，然而在其他实施方式中，传感器140可被定向成稍微偏离正交位置。最常使用的定向与正交成约5度以内的角度。
可将传感器140调谐成相同波长或光谱，或调谐成不同波长或光谱。例如，腔室100中使用的基板可以是成分相同的，或者这些基板可具有不同成分的区域。使用被调谐成不同波长的传感器140可允许监测具有不同成分且对热能具有不同发射响应的基板区域。传感器140通常被调谐到红外线波长，例如约4微米。
顶部热传感器118可设置在反射体122中以监测上拱形结构128的热状态(如需要)或者从与传感器140相对的视角监测基板108的热状态。此监测可用于比较从传感器140接收的数据，例如用于判断从传感器140接收的数据是否存在错误。在一些情况下，顶部热传感器118可以是具有多于一个单独传感器的传感器组件。因此，腔室100可具有被设置以接收由基板的第一面发射的辐射的一或更多个传感器以及具有被设置以接收来自基板的与第一面相对的第二面的辐射的一或更多个传感器。
控制器160接收来自传感器140的数据并根据所述数据分别调整传送到每个灯102或个别群组的灯或灯区的功率。控制器160可包括电源162，电源162独立地供电给各个灯或灯区。控制器160可配置有所需温度分布，并依据与接收自传感器140的数据进行比较，控制器160调整至灯和/或灯区的功率以使观测的热数据与所需的热分布一致。若腔室效能随着时间而缓慢改变(drift)，则控制器160亦可调整至灯和/或灯区的功率以使一个基板的热处理与另一基板的热处理一致。
图2是概括根据另一实施方式的方法200的流程图。在202，基板被定位在处理腔室中的基板支撑件上。基板支撑件对热辐射实质上透明且具有低热质量。热灯被定位以提供热至基板。
在204，处理气体被引入至处理腔室，且处理腔室的气压被设定在约0.01托与约10托之间。处理气体可以是任何气体，将由所述气体在基板上形成层。处理气体可包含第Ⅳ族前驱物和/或第Ⅲ族与第Ⅴ族前驱物，可由这些前驱物形成第Ⅳ族材料(比如硅或锗)或第Ⅲ/Ⅴ族化合物材料(比如氮化铝)。亦可使用这些前驱物的混合物。处理气体通常与无反应的稀释剂或载气流动，且通常被提供于实质上与基板表面平行的层流或准层流。
在206，基板被加热到约400摄氏度与约1200摄氏度之间的温度，例如约600度。前驱物与加热的基板表面接触并在基板表面上形成层。基板可旋转以改善膜性质的均匀性。
在208，由第一光学传感器测量基板的第一区域的第一温度以及由第二光学传感器测量基板的第二区域的第二温度。光学传感器可以是感测由基板的第一区域与第二区域发射的辐射强度的高温计。在一些实施方式中，可调整接收自光学传感器的信号以补偿灯发出的以及基板反射的背景辐射。作为温度函数的基板反射率以及由灯发射的已知光强度可用于模拟反射光的强度，且模拟的强度用于调整来自光学传感器的信号以改善传感器的信噪比。
在210，根据第一温度与第二温度的读值调整至灯的功率以使得第一温度与第一目标温度一致以及使得第二温度与第二目标温度一致。第一与第二目标温度可相同或不同。例如，为了补偿基板边缘比基板中央更快的膜生成，可在基板中央测量第一温度，可在基板边缘测量第二温度，以及调整灯功率以在基板的中央提供比基板的边缘更高的基板温度。如需要，则可使用多于两个的区域来监测基板上的多于两个位置处的温度以增加局部温度控制的特定性。
在212，停止处理过程并从处理腔室移除基板。在214，提供清洁气体至腔室以移除腔室表面的沉积物。移除沉积物修正了腔室部件关于灯辐射的透射率的减小以及修正了腔室部件关于基板发射的透射率的减小，从而维持了基板间的膜性质的可重复性。清洁气体通常是包含氯、溴或碘的气体。常使用诸如氯(Cl2)、溴(Br2)、碘(I2)、氯化氢(HCl)、溴化氢(HBr)及碘化氢(HI)之类的气体。当使用元素卤素时，腔室温度可维持近似恒定或稍微增加以清洁腔室。当使用卤化氢时，通常增加腔室温度以补偿减小的卤素清洁剂浓度。用卤化氢清洁时腔室温度可增加到约800摄氏度与约1200摄氏度之间，例如约900摄氏度。在清洁后的30秒到10分钟，依照所需要的清洁结果，可处理另一基板。
虽然前述内容针对本发明的实施方式，但在不背离本发明的基本范围的情况下，可设计出本发明的其他及进一步的实施方式，且本发明的范围由以下权利要求书确定。

Claims (15)

1.一种基板处理设备，包括：
真空腔室，所述真空腔室包含透明拱形结构与透明底板；
基板支撑件，所述基板支撑件设置在所述真空腔室内；
多个热灯，所述多个热灯布置在灯头中并定位成靠近所述真空腔室的所述透明底板；
多个热传感器，所述多个热传感器设置在所述灯头中并被定向以接收来自靠近所述基板支撑件的区域的热辐射；
多个电源，所述多个电源耦接至与所述热传感器的位置相关的所述热灯；及
控制器，所述控制器根据来自所述热传感器的输入来调整所述电源。
2.如权利要求1所述的基板处理设备，其中所述热传感器接收穿过所述透明底板的热辐射。
3.如权利要求2所述的基板处理设备，其中所述基板支撑件是具有低热质量的盘状构件，且所述热传感器接收由所述基板发射且由所述基板支撑件传输的热辐射。
4.如权利要求3所述的基板处理设备，进一步包括反射体，所述反射体被设置成靠近所述透明拱形结构，所述反射体与所述透明拱形结构共同界定热控制空间。
5.如权利要求4所述的基板处理设备，进一步包括用于热控制流体的入口以及用于所述热控制流体的出口，所述入口设置穿过所述反射体而与所述热控制空间流体连通，所述出口设置穿过所述反射体而与所述热控制空间流体连通。
6.如权利要求5所述的基板处理设备，其中所述透明拱形结构与所述透明底板都是石英。
7.如权利要求6所述的基板处理设备，进一步包括热传感器，所述热传感器设置成靠近所述透明拱形结构。
8.如权利要求7所述的基板处理设备，其中所述热传感器设置在所述反射体中。
9.如权利要求8所述的基板处理设备，其中设置在所述灯头内的每个热传感器观测所述基板的一区域。
10.如权利要求9所述的基板处理设备，其中设置在所述灯头内的所述热传感器被定位在所述灯之间。
11.一种处理基板的方法，包括以下步骤：
将所述基板设置在具有透明底板的腔室中；
通过使来自多个灯的辐射透射穿过所述透明底板来加热所述基板；
通过使前驱物气体实质上平行于所述基板的表面而流过所述基板来沉积层于所述基板上；
使用设置成靠近所述透明底板的第一传感器来检测所述基板的第一区域处的第一温度；
使用设置成靠近所述透明底板的第二传感器来检测所述基板的第二区域处的第二温度；
依据所述第一温度调整至所述多个灯的第一部分的功率；及
依据所述第二温度调整至所述多个灯的第二部分的功率。
12.如权利要求11所述的方法，进一步包括以下步骤：
从所述腔室移除所述基板；
使清洁气体流进所述腔室，所述清洁气体包含氯、溴或碘；
从所述腔室移除所述清洁气体；及
将第二基板设置在所述腔室中以用于处理。
13.如权利要求12所述的方法，其中当使所述清洁气体流进所述腔室时，维持或升高所述腔室的温度。
14.如权利要求13所述的方法，其中所述第一区域被定位成与所述基板的中心相距第一径向距离，所述第二区域被定位成与所述基板的所述中心相距第二径向距离，且所述第一径向距离与所述第二径向距离不同。
15.如权利要求14所述的方法，进一步包括维持横跨所述基板的温度梯度。
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TWI673796B (zh) 2019-10-01
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US20140199785A1 (en) 2014-07-17
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