JP6377231B1 - Mn−Zn−W−O系スパッタリングターゲット及びその製造方法 - Google Patents

Mn−Zn−W−O系スパッタリングターゲット及びその製造方法 Download PDF

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JP6377231B1
JP6377231B1 JP2017204321A JP2017204321A JP6377231B1 JP 6377231 B1 JP6377231 B1 JP 6377231B1 JP 2017204321 A JP2017204321 A JP 2017204321A JP 2017204321 A JP2017204321 A JP 2017204321A JP 6377231 B1 JP6377231 B1 JP 6377231B1
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powder
sputtering target
target
crystalline phase
mol
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Japanese (ja)
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JP2019077907A (ja
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雄一 加守
雄一 加守
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Dexerials Corp
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Dexerials Corp
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Priority to JP2017204321A priority Critical patent/JP6377231B1/ja
Priority to TW107119596A priority patent/TWI757507B/zh
Priority to CN201810651297.6A priority patent/CN109695021B/zh
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/05Mixtures of metal powder with non-metallic powder
    • C22C1/051Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C29/00Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/12Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacturing Optical Record Carriers (AREA)
JP2017204321A 2017-10-23 2017-10-23 Mn−Zn−W−O系スパッタリングターゲット及びその製造方法 Active JP6377231B1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017204321A JP6377231B1 (ja) 2017-10-23 2017-10-23 Mn−Zn−W−O系スパッタリングターゲット及びその製造方法
TW107119596A TWI757507B (zh) 2017-10-23 2018-06-07 Mn-Zn-W-O系濺鍍靶及其製造方法
CN201810651297.6A CN109695021B (zh) 2017-10-23 2018-06-22 Mn-Zn-W-O系溅射靶材及其制备方法

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JP2017204321A JP6377231B1 (ja) 2017-10-23 2017-10-23 Mn−Zn−W−O系スパッタリングターゲット及びその製造方法

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JP6377231B1 true JP6377231B1 (ja) 2018-08-22
JP2019077907A JP2019077907A (ja) 2019-05-23

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JP (1) JP6377231B1 (zh)
CN (1) CN109695021B (zh)
TW (1) TWI757507B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021093229A (ja) * 2019-12-09 2021-06-17 株式会社神戸製鋼所 光情報記録媒体用記録層、光情報記録媒体、及びスパッタリングターゲット
JP2021178748A (ja) * 2020-05-12 2021-11-18 株式会社コベルコ科研 焼結体の製造方法及びスパッタリングターゲットの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017145492A (ja) * 2016-02-19 2017-08-24 デクセリアルズ株式会社 Mn−Zn−W−O系スパッタリングターゲット及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101346472B1 (ko) * 2008-06-06 2014-01-02 이데미쓰 고산 가부시키가이샤 산화물 박막용 스퍼터링 타겟 및 그의 제조 방법
JP5169888B2 (ja) * 2009-02-04 2013-03-27 住友金属鉱山株式会社 複合タングステン酸化物ターゲット材とその製造方法
MY168701A (en) * 2012-03-15 2018-11-29 Jx Nippon Mining & Metals Corp Magnetic material sputtering target and manufacturing method thereof
SG11201407011UA (en) * 2012-09-18 2014-11-27 Jx Nippon Mining & Metals Corp Sputtering target
JP6091911B2 (ja) * 2013-01-29 2017-03-08 株式会社Shカッパープロダクツ Cu−Mn合金スパッタリングターゲット材、Cu−Mn合金スパッタリングターゲット材の製造方法、および半導体素子
JP6560497B2 (ja) * 2015-01-27 2019-08-14 デクセリアルズ株式会社 Mn−Zn−W−O系スパッタリングターゲット及びその製造方法
JP6042520B1 (ja) * 2015-11-05 2016-12-14 デクセリアルズ株式会社 Mn−Zn−O系スパッタリングターゲット及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017145492A (ja) * 2016-02-19 2017-08-24 デクセリアルズ株式会社 Mn−Zn−W−O系スパッタリングターゲット及びその製造方法

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Publication number Publication date
TWI757507B (zh) 2022-03-11
CN109695021B (zh) 2021-10-12
JP2019077907A (ja) 2019-05-23
TW201917230A (zh) 2019-05-01
CN109695021A (zh) 2019-04-30

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