JP6377231B1 - Mn−Zn−W−O系スパッタリングターゲット及びその製造方法 - Google Patents
Mn−Zn−W−O系スパッタリングターゲット及びその製造方法 Download PDFInfo
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- JP6377231B1 JP6377231B1 JP2017204321A JP2017204321A JP6377231B1 JP 6377231 B1 JP6377231 B1 JP 6377231B1 JP 2017204321 A JP2017204321 A JP 2017204321A JP 2017204321 A JP2017204321 A JP 2017204321A JP 6377231 B1 JP6377231 B1 JP 6377231B1
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 10
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 10
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000011572 manganese Substances 0.000 claims description 45
- 238000005245 sintering Methods 0.000 claims description 31
- 239000000843 powder Substances 0.000 claims description 29
- 239000010949 copper Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 21
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 19
- 239000011812 mixed powder Substances 0.000 claims description 16
- 238000002156 mixing Methods 0.000 claims description 15
- 239000011701 zinc Substances 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 229910052771 Terbium Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 abstract description 13
- 238000004544 sputter deposition Methods 0.000 abstract description 13
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 239000012071 phase Substances 0.000 description 45
- 230000000052 comparative effect Effects 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 238000002186 photoelectron spectrum Methods 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910002480 Cu-O Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- PPNAOCWZXJOHFK-UHFFFAOYSA-N manganese(2+);oxygen(2-) Chemical class [O-2].[Mn+2] PPNAOCWZXJOHFK-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
- C22C1/051—Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/12—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on oxides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
Priority Applications (3)
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JP2017204321A JP6377231B1 (ja) | 2017-10-23 | 2017-10-23 | Mn−Zn−W−O系スパッタリングターゲット及びその製造方法 |
TW107119596A TWI757507B (zh) | 2017-10-23 | 2018-06-07 | Mn-Zn-W-O系濺鍍靶及其製造方法 |
CN201810651297.6A CN109695021B (zh) | 2017-10-23 | 2018-06-22 | Mn-Zn-W-O系溅射靶材及其制备方法 |
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JP2017204321A JP6377231B1 (ja) | 2017-10-23 | 2017-10-23 | Mn−Zn−W−O系スパッタリングターゲット及びその製造方法 |
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JP6377231B1 true JP6377231B1 (ja) | 2018-08-22 |
JP2019077907A JP2019077907A (ja) | 2019-05-23 |
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JP (1) | JP6377231B1 (zh) |
CN (1) | CN109695021B (zh) |
TW (1) | TWI757507B (zh) |
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JP2021093229A (ja) * | 2019-12-09 | 2021-06-17 | 株式会社神戸製鋼所 | 光情報記録媒体用記録層、光情報記録媒体、及びスパッタリングターゲット |
JP2021178748A (ja) * | 2020-05-12 | 2021-11-18 | 株式会社コベルコ科研 | 焼結体の製造方法及びスパッタリングターゲットの製造方法 |
Citations (1)
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JP2017145492A (ja) * | 2016-02-19 | 2017-08-24 | デクセリアルズ株式会社 | Mn−Zn−W−O系スパッタリングターゲット及びその製造方法 |
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KR101346472B1 (ko) * | 2008-06-06 | 2014-01-02 | 이데미쓰 고산 가부시키가이샤 | 산화물 박막용 스퍼터링 타겟 및 그의 제조 방법 |
JP5169888B2 (ja) * | 2009-02-04 | 2013-03-27 | 住友金属鉱山株式会社 | 複合タングステン酸化物ターゲット材とその製造方法 |
MY168701A (en) * | 2012-03-15 | 2018-11-29 | Jx Nippon Mining & Metals Corp | Magnetic material sputtering target and manufacturing method thereof |
SG11201407011UA (en) * | 2012-09-18 | 2014-11-27 | Jx Nippon Mining & Metals Corp | Sputtering target |
JP6091911B2 (ja) * | 2013-01-29 | 2017-03-08 | 株式会社Shカッパープロダクツ | Cu−Mn合金スパッタリングターゲット材、Cu−Mn合金スパッタリングターゲット材の製造方法、および半導体素子 |
JP6560497B2 (ja) * | 2015-01-27 | 2019-08-14 | デクセリアルズ株式会社 | Mn−Zn−W−O系スパッタリングターゲット及びその製造方法 |
JP6042520B1 (ja) * | 2015-11-05 | 2016-12-14 | デクセリアルズ株式会社 | Mn−Zn−O系スパッタリングターゲット及びその製造方法 |
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2017
- 2017-10-23 JP JP2017204321A patent/JP6377231B1/ja active Active
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2018
- 2018-06-07 TW TW107119596A patent/TWI757507B/zh active
- 2018-06-22 CN CN201810651297.6A patent/CN109695021B/zh active Active
Patent Citations (1)
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JP2017145492A (ja) * | 2016-02-19 | 2017-08-24 | デクセリアルズ株式会社 | Mn−Zn−W−O系スパッタリングターゲット及びその製造方法 |
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Publication number | Publication date |
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TWI757507B (zh) | 2022-03-11 |
CN109695021B (zh) | 2021-10-12 |
JP2019077907A (ja) | 2019-05-23 |
TW201917230A (zh) | 2019-05-01 |
CN109695021A (zh) | 2019-04-30 |
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