JP6376188B2 - イグナイタ - Google Patents

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Publication number
JP6376188B2
JP6376188B2 JP2016165699A JP2016165699A JP6376188B2 JP 6376188 B2 JP6376188 B2 JP 6376188B2 JP 2016165699 A JP2016165699 A JP 2016165699A JP 2016165699 A JP2016165699 A JP 2016165699A JP 6376188 B2 JP6376188 B2 JP 6376188B2
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Japan
Prior art keywords
control circuit
protective
semiconductor chip
circuit unit
protection
Prior art date
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Application number
JP2016165699A
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English (en)
Japanese (ja)
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JP2017089614A5 (enExample
JP2017089614A (ja
Inventor
元男 山口
元男 山口
藤行 岩本
藤行 岩本
竹田　俊一
俊一 竹田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to US15/773,284 priority Critical patent/US10443557B2/en
Priority to CN201680064496.6A priority patent/CN108350848B/zh
Priority to DE112016005060.7T priority patent/DE112016005060B4/de
Priority to PCT/JP2016/079967 priority patent/WO2017077814A1/ja
Publication of JP2017089614A publication Critical patent/JP2017089614A/ja
Publication of JP2017089614A5 publication Critical patent/JP2017089614A5/ja
Application granted granted Critical
Publication of JP6376188B2 publication Critical patent/JP6376188B2/ja
Active legal-status Critical Current
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P3/00—Other installations
    • F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
    • F02P3/04—Layout of circuits
    • F02P3/055—Layout of circuits with protective means to prevent damage to the circuit, e.g. semiconductor devices or the ignition coil
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P15/00—Electric spark ignition having characteristics not provided for in, or of interest apart from, groups F02P1/00 - F02P13/00 and combined with layout of ignition circuits
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P3/00—Other installations
    • F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
    • F02P3/04—Layout of circuits
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P3/00—Other installations
    • F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
    • F02P3/04—Layout of circuits
    • F02P3/05—Layout of circuits for control of the magnitude of the current in the ignition coil
    • F02P3/051—Opening or closing the primary coil circuit with semiconductor devices
    • F02P3/053—Opening or closing the primary coil circuit with semiconductor devices using digital techniques
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    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
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    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/48195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
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    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)
JP2016165699A 2015-11-04 2016-08-26 イグナイタ Active JP6376188B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US15/773,284 US10443557B2 (en) 2015-11-04 2016-10-07 Igniter
CN201680064496.6A CN108350848B (zh) 2015-11-04 2016-10-07 点火器
DE112016005060.7T DE112016005060B4 (de) 2015-11-04 2016-10-07 Zündvorrichtung
PCT/JP2016/079967 WO2017077814A1 (ja) 2015-11-04 2016-10-07 イグナイタ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015216898 2015-11-04
JP2015216898 2015-11-04

Publications (3)

Publication Number Publication Date
JP2017089614A JP2017089614A (ja) 2017-05-25
JP2017089614A5 JP2017089614A5 (enExample) 2018-02-15
JP6376188B2 true JP6376188B2 (ja) 2018-08-22

Family

ID=58767488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016165699A Active JP6376188B2 (ja) 2015-11-04 2016-08-26 イグナイタ

Country Status (4)

Country Link
US (1) US10443557B2 (enExample)
JP (1) JP6376188B2 (enExample)
CN (1) CN108350848B (enExample)
DE (1) DE112016005060B4 (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
JP3103668B2 (ja) 1992-04-08 2000-10-30 蛇の目ミシン工業株式会社 刺しゅうミシンにおける原画読取装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10907607B2 (en) * 2019-04-24 2021-02-02 Semiconductor Components Industries, Llc Circuit and method for controlling a coil current during a soft shut down
JP7691809B2 (ja) 2020-02-21 2025-06-12 富士電機株式会社 半導体装置および半導体装置の製造方法
CN117280465A (zh) * 2021-05-13 2023-12-22 罗姆股份有限公司 半导体装置

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JPS5278186A (en) 1975-12-24 1977-07-01 Seiko Instr & Electronics Ltd Slicing machine
JPS62152077U (enExample) * 1986-03-19 1987-09-26
JPS62291475A (ja) * 1986-06-11 1987-12-18 Mitsubishi Electric Corp 内燃機関停止装置
JPH0427170U (enExample) * 1990-06-29 1992-03-04
JPH0427170A (ja) 1990-05-23 1992-01-30 Ricoh Co Ltd 光起電力素子
JP3194680B2 (ja) * 1994-12-15 2001-07-30 三菱電機株式会社 内燃機関の失火検出装置
JP3205247B2 (ja) * 1996-02-23 2001-09-04 株式会社日立製作所 内燃機関用点火装置
US5992401A (en) * 1997-09-10 1999-11-30 Outboard Marine Corporation Capacitive discharge ignition for an internal combustion engine
JP3484123B2 (ja) * 2000-01-12 2004-01-06 株式会社日立製作所 内燃機関用点火装置
DE10062892A1 (de) * 2000-12-16 2002-07-11 Bosch Gmbh Robert Zündeinrichtung für Brennkraftmaschinen
JP3762231B2 (ja) * 2001-02-08 2006-04-05 株式会社日立製作所 内燃機関用点火装置
JP4375146B2 (ja) * 2004-07-13 2009-12-02 株式会社デンソー 点火装置のイグナイタ
JP4924705B2 (ja) 2009-04-15 2012-04-25 株式会社デンソー 内燃機関点火装置
JP5278186B2 (ja) 2009-06-17 2013-09-04 株式会社デンソー 内燃機関点火装置
JP2011074905A (ja) 2009-10-02 2011-04-14 Hanshin Electric Co Ltd 内燃機関用の点火イグナイタ
JP5714280B2 (ja) 2010-09-17 2015-05-07 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
JP5644541B2 (ja) 2011-01-25 2014-12-24 株式会社デンソー 半導体装置とその製造方法
JP5900627B2 (ja) 2012-08-30 2016-04-06 富士電機株式会社 イグナイタ、イグナイタの制御方法および内燃機関用点火装置
JP5884694B2 (ja) 2012-09-20 2016-03-15 株式会社デンソー 半導体装置
JP6282008B2 (ja) 2014-05-20 2018-02-21 株式会社松本義肢製作所 四足動物用首ホールドカラー
JP2016165699A (ja) 2015-03-10 2016-09-15 株式会社ガイアテック 洗浄廃水処理用プール、それを使用した洗浄廃水処理装置および洗浄廃水の処理方法
JP6565244B2 (ja) 2015-03-20 2019-08-28 富士電機株式会社 イグナイタ用半導体装置、イグナイタシステム及び点火コイルユニット
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JP3103668B2 (ja) 1992-04-08 2000-10-30 蛇の目ミシン工業株式会社 刺しゅうミシンにおける原画読取装置

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