CN108350848B - 点火器 - Google Patents

点火器 Download PDF

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Publication number
CN108350848B
CN108350848B CN201680064496.6A CN201680064496A CN108350848B CN 108350848 B CN108350848 B CN 108350848B CN 201680064496 A CN201680064496 A CN 201680064496A CN 108350848 B CN108350848 B CN 108350848B
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China
Prior art keywords
igniter
protection
control circuit
semiconductor chip
zener diode
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CN201680064496.6A
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English (en)
Chinese (zh)
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CN108350848A (zh
Inventor
山口元男
岩本藤行
竹田俊一
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Denso Corp
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Denso Corp
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Priority claimed from PCT/JP2016/079967 external-priority patent/WO2017077814A1/ja
Publication of CN108350848A publication Critical patent/CN108350848A/zh
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Publication of CN108350848B publication Critical patent/CN108350848B/zh
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P3/00—Other installations
    • F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
    • F02P3/04—Layout of circuits
    • F02P3/055—Layout of circuits with protective means to prevent damage to the circuit, e.g. semiconductor devices or the ignition coil
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P15/00—Electric spark ignition having characteristics not provided for in, or of interest apart from, groups F02P1/00 - F02P13/00 and combined with layout of ignition circuits
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P3/00—Other installations
    • F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
    • F02P3/04—Layout of circuits
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P3/00—Other installations
    • F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
    • F02P3/04—Layout of circuits
    • F02P3/05—Layout of circuits for control of the magnitude of the current in the ignition coil
    • F02P3/051—Opening or closing the primary coil circuit with semiconductor devices
    • F02P3/053—Opening or closing the primary coil circuit with semiconductor devices using digital techniques
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
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    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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    • H01L2924/0001—Technical content checked by a classifier
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    • H10D8/00—Diodes
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)
CN201680064496.6A 2015-11-04 2016-10-07 点火器 Active CN108350848B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2015216898 2015-11-04
JP2015-216898 2015-11-04
JP2016165699A JP6376188B2 (ja) 2015-11-04 2016-08-26 イグナイタ
JP2016-165699 2016-08-26
PCT/JP2016/079967 WO2017077814A1 (ja) 2015-11-04 2016-10-07 イグナイタ

Publications (2)

Publication Number Publication Date
CN108350848A CN108350848A (zh) 2018-07-31
CN108350848B true CN108350848B (zh) 2020-06-05

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CN201680064496.6A Active CN108350848B (zh) 2015-11-04 2016-10-07 点火器

Country Status (4)

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US (1) US10443557B2 (enExample)
JP (1) JP6376188B2 (enExample)
CN (1) CN108350848B (enExample)
DE (1) DE112016005060B4 (enExample)

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Publication number Priority date Publication date Assignee Title
JP3103668B2 (ja) 1992-04-08 2000-10-30 蛇の目ミシン工業株式会社 刺しゅうミシンにおける原画読取装置
US10907607B2 (en) * 2019-04-24 2021-02-02 Semiconductor Components Industries, Llc Circuit and method for controlling a coil current during a soft shut down
JP7691809B2 (ja) 2020-02-21 2025-06-12 富士電機株式会社 半導体装置および半導体装置の製造方法
CN117280465A (zh) * 2021-05-13 2023-12-22 罗姆股份有限公司 半导体装置

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Publication number Priority date Publication date Assignee Title
US3949722A (en) * 1973-08-07 1976-04-13 Robert Bosch G.M.B.H. Semiconductor controlled ignition systems for internal combustion engines
JPS62291475A (ja) * 1986-06-11 1987-12-18 Mitsubishi Electric Corp 内燃機関停止装置
JPH0427170U (enExample) * 1990-06-29 1992-03-04
US5563332A (en) * 1994-12-15 1996-10-08 Mitsubishi Denki Kabushiki Kaisha Apparatus for detecting misfire in internal combustion engine
CN1270658A (zh) * 1997-09-10 2000-10-18 舷外发动机公司 用于内燃机的电容放电点火器

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JPS5278186A (en) 1975-12-24 1977-07-01 Seiko Instr & Electronics Ltd Slicing machine
JPS62152077U (enExample) * 1986-03-19 1987-09-26
JPH0427170A (ja) 1990-05-23 1992-01-30 Ricoh Co Ltd 光起電力素子
JP3205247B2 (ja) * 1996-02-23 2001-09-04 株式会社日立製作所 内燃機関用点火装置
JP3484123B2 (ja) * 2000-01-12 2004-01-06 株式会社日立製作所 内燃機関用点火装置
DE10062892A1 (de) * 2000-12-16 2002-07-11 Bosch Gmbh Robert Zündeinrichtung für Brennkraftmaschinen
JP3762231B2 (ja) * 2001-02-08 2006-04-05 株式会社日立製作所 内燃機関用点火装置
JP4375146B2 (ja) * 2004-07-13 2009-12-02 株式会社デンソー 点火装置のイグナイタ
JP4924705B2 (ja) 2009-04-15 2012-04-25 株式会社デンソー 内燃機関点火装置
JP5278186B2 (ja) 2009-06-17 2013-09-04 株式会社デンソー 内燃機関点火装置
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