JP6371122B2 - パワー半導体装置および樹脂封止型モータ - Google Patents

パワー半導体装置および樹脂封止型モータ Download PDF

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Publication number
JP6371122B2
JP6371122B2 JP2014117042A JP2014117042A JP6371122B2 JP 6371122 B2 JP6371122 B2 JP 6371122B2 JP 2014117042 A JP2014117042 A JP 2014117042A JP 2014117042 A JP2014117042 A JP 2014117042A JP 6371122 B2 JP6371122 B2 JP 6371122B2
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Japan
Prior art keywords
chip
size
electrode pad
semiconductor device
power semiconductor
Prior art date
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Application number
JP2014117042A
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English (en)
Japanese (ja)
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JP2015230990A (ja
JP2015230990A5 (enExample
Inventor
河野　賢哉
賢哉 河野
健司 桜井
健司 桜井
太輔 磯部
太輔 磯部
智之 内海
智之 内海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Minebea Power Semiconductor Device Inc
Original Assignee
Hitachi Ltd
Hitachi Power Semiconductor Device Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Hitachi Ltd, Hitachi Power Semiconductor Device Ltd filed Critical Hitachi Ltd
Priority to JP2014117042A priority Critical patent/JP6371122B2/ja
Publication of JP2015230990A publication Critical patent/JP2015230990A/ja
Publication of JP2015230990A5 publication Critical patent/JP2015230990A5/ja
Application granted granted Critical
Publication of JP6371122B2 publication Critical patent/JP6371122B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Inverter Devices (AREA)
JP2014117042A 2014-06-05 2014-06-05 パワー半導体装置および樹脂封止型モータ Active JP6371122B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014117042A JP6371122B2 (ja) 2014-06-05 2014-06-05 パワー半導体装置および樹脂封止型モータ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014117042A JP6371122B2 (ja) 2014-06-05 2014-06-05 パワー半導体装置および樹脂封止型モータ

Publications (3)

Publication Number Publication Date
JP2015230990A JP2015230990A (ja) 2015-12-21
JP2015230990A5 JP2015230990A5 (enExample) 2017-04-13
JP6371122B2 true JP6371122B2 (ja) 2018-08-08

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JP2014117042A Active JP6371122B2 (ja) 2014-06-05 2014-06-05 パワー半導体装置および樹脂封止型モータ

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JP (1) JP6371122B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11626221B2 (en) 2021-06-16 2023-04-11 Fuji Electric Co., Ltd. Resistance element and its manufacturing method
US20240112996A1 (en) * 2019-10-24 2024-04-04 Rohm Co., Ltd. Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7290960B2 (ja) * 2019-03-11 2023-06-14 ローム株式会社 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04134862U (ja) * 1991-06-04 1992-12-15 沖電気工業株式会社 混成集積回路装置
JPH06181286A (ja) * 1992-12-14 1994-06-28 Toshiba Corp 半導体装置
US5977640A (en) * 1998-06-26 1999-11-02 International Business Machines Corporation Highly integrated chip-on-chip packaging
JP3815933B2 (ja) * 1999-12-10 2006-08-30 ローム株式会社 半導体装置及びその製造方法
JP3503133B2 (ja) * 1999-12-10 2004-03-02 日本電気株式会社 電子デバイス集合体と電子デバイスの接続方法
JP2002170920A (ja) * 2000-12-04 2002-06-14 Nec Eng Ltd フリップチップ装置
JP3723869B2 (ja) * 2001-03-30 2005-12-07 株式会社日立製作所 半導体装置
JP2003152158A (ja) * 2001-11-09 2003-05-23 Matsushita Electric Ind Co Ltd 半導体素子を実装した電子部品及びその製造方法
JP2003258197A (ja) * 2002-03-07 2003-09-12 Seiko Instruments Inc 半導体装置
JP2003319615A (ja) * 2002-04-23 2003-11-07 Matsushita Electric Ind Co Ltd モールド型モータ
JP2004146728A (ja) * 2002-10-28 2004-05-20 Sony Corp 半導体装置とその製造方法
JP5966287B2 (ja) * 2011-09-15 2016-08-10 大日本印刷株式会社 サスペンション用基板、サスペンション、素子付サスペンション、ハードディスクドライブ、およびサスペンション用基板の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240112996A1 (en) * 2019-10-24 2024-04-04 Rohm Co., Ltd. Semiconductor device
US11626221B2 (en) 2021-06-16 2023-04-11 Fuji Electric Co., Ltd. Resistance element and its manufacturing method

Also Published As

Publication number Publication date
JP2015230990A (ja) 2015-12-21

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