JP6357353B2 - 結晶性シリコンウェハーのテクスチャエッチング液組成物及びテクスチャエッチング方法 - Google Patents

結晶性シリコンウェハーのテクスチャエッチング液組成物及びテクスチャエッチング方法 Download PDF

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JP6357353B2
JP6357353B2 JP2014113698A JP2014113698A JP6357353B2 JP 6357353 B2 JP6357353 B2 JP 6357353B2 JP 2014113698 A JP2014113698 A JP 2014113698A JP 2014113698 A JP2014113698 A JP 2014113698A JP 6357353 B2 JP6357353 B2 JP 6357353B2
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crystalline silicon
texture
silicon wafer
composition
compound
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Japanese (ja)
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JP2015023277A (ja
Inventor
勉奎 朴
勉奎 朴
亨杓 洪
亨杓 洪
大成 林
大成 林
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Dongwoo Fine Chem Co Ltd
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Dongwoo Fine Chem Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
JP2014113698A 2013-07-19 2014-06-02 結晶性シリコンウェハーのテクスチャエッチング液組成物及びテクスチャエッチング方法 Active JP6357353B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20130085587 2013-07-19
KR10-2013-0085587 2013-07-19
KR10-2014-0011609 2014-01-29
KR1020140011609A KR102122049B1 (ko) 2013-07-19 2014-01-29 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법

Publications (2)

Publication Number Publication Date
JP2015023277A JP2015023277A (ja) 2015-02-02
JP6357353B2 true JP6357353B2 (ja) 2018-07-11

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JP2014113698A Active JP6357353B2 (ja) 2013-07-19 2014-06-02 結晶性シリコンウェハーのテクスチャエッチング液組成物及びテクスチャエッチング方法

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JP (1) JP6357353B2 (zh)
KR (1) KR102122049B1 (zh)
TW (1) TW201506129A (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017069560A1 (ko) * 2015-10-23 2017-04-27 오씨아이 주식회사 실리콘 텍스쳐링 조성물 및 이의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4137123A (en) 1975-12-31 1979-01-30 Motorola, Inc. Texture etching of silicon: method
KR0180621B1 (ko) 1995-12-01 1999-04-15 이창세 실리콘 웨이퍼의 텍스쳐 에칭 방법 및 텍스쳐 용액
KR20120015485A (ko) * 2010-08-12 2012-02-22 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법
KR20130002258A (ko) * 2011-06-28 2013-01-07 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
CN103890139A (zh) * 2011-10-19 2014-06-25 东友精细化工有限公司 结晶性硅晶片的织构蚀刻液组合物及织构蚀刻方法
KR20130043051A (ko) * 2011-10-19 2013-04-29 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
CN104584232B (zh) * 2012-08-10 2017-03-08 第一工业制药株式会社 纹理形成用蚀刻液及使用其的纹理形成方法

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Publication number Publication date
KR102122049B1 (ko) 2020-06-11
KR20150010558A (ko) 2015-01-28
JP2015023277A (ja) 2015-02-02
TW201506129A (zh) 2015-02-16

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