KR102122049B1 - 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 - Google Patents

결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 Download PDF

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Publication number
KR102122049B1
KR102122049B1 KR1020140011609A KR20140011609A KR102122049B1 KR 102122049 B1 KR102122049 B1 KR 102122049B1 KR 1020140011609 A KR1020140011609 A KR 1020140011609A KR 20140011609 A KR20140011609 A KR 20140011609A KR 102122049 B1 KR102122049 B1 KR 102122049B1
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KR
South Korea
Prior art keywords
texture
silicon wafer
crystalline silicon
composition
etching solution
Prior art date
Application number
KR1020140011609A
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English (en)
Korean (ko)
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KR20150010558A (ko
Inventor
박면규
홍형표
임대성
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to TW103117254A priority Critical patent/TW201506129A/zh
Priority to JP2014113698A priority patent/JP6357353B2/ja
Priority to CN201410340376.7A priority patent/CN104294368A/zh
Publication of KR20150010558A publication Critical patent/KR20150010558A/ko
Application granted granted Critical
Publication of KR102122049B1 publication Critical patent/KR102122049B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
KR1020140011609A 2013-07-19 2014-01-29 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 KR102122049B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW103117254A TW201506129A (zh) 2013-07-19 2014-05-16 結晶性矽晶圓之組織浸蝕液組成物及組織浸蝕方法
JP2014113698A JP6357353B2 (ja) 2013-07-19 2014-06-02 結晶性シリコンウェハーのテクスチャエッチング液組成物及びテクスチャエッチング方法
CN201410340376.7A CN104294368A (zh) 2013-07-19 2014-07-16 结晶性硅晶片的织构蚀刻液组合物及织构蚀刻方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20130085587 2013-07-19
KR1020130085587 2013-07-19

Publications (2)

Publication Number Publication Date
KR20150010558A KR20150010558A (ko) 2015-01-28
KR102122049B1 true KR102122049B1 (ko) 2020-06-11

Family

ID=52482361

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140011609A KR102122049B1 (ko) 2013-07-19 2014-01-29 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법

Country Status (3)

Country Link
JP (1) JP6357353B2 (zh)
KR (1) KR102122049B1 (zh)
TW (1) TW201506129A (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017069560A1 (ko) * 2015-10-23 2017-04-27 오씨아이 주식회사 실리콘 텍스쳐링 조성물 및 이의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4137123A (en) 1975-12-31 1979-01-30 Motorola, Inc. Texture etching of silicon: method
KR0180621B1 (ko) 1995-12-01 1999-04-15 이창세 실리콘 웨이퍼의 텍스쳐 에칭 방법 및 텍스쳐 용액
KR20120015485A (ko) * 2010-08-12 2012-02-22 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법
KR20130002258A (ko) * 2011-06-28 2013-01-07 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
CN103890139A (zh) * 2011-10-19 2014-06-25 东友精细化工有限公司 结晶性硅晶片的织构蚀刻液组合物及织构蚀刻方法
KR20130043051A (ko) * 2011-10-19 2013-04-29 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
CN104584232B (zh) * 2012-08-10 2017-03-08 第一工业制药株式会社 纹理形成用蚀刻液及使用其的纹理形成方法

Also Published As

Publication number Publication date
KR20150010558A (ko) 2015-01-28
JP6357353B2 (ja) 2018-07-11
JP2015023277A (ja) 2015-02-02
TW201506129A (zh) 2015-02-16

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