JP6356478B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6356478B2 JP6356478B2 JP2014097351A JP2014097351A JP6356478B2 JP 6356478 B2 JP6356478 B2 JP 6356478B2 JP 2014097351 A JP2014097351 A JP 2014097351A JP 2014097351 A JP2014097351 A JP 2014097351A JP 6356478 B2 JP6356478 B2 JP 6356478B2
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- Prior art keywords
- nickel
- titanium
- film
- semiconductor element
- electrode
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- 239000004065 semiconductor Substances 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 94
- 239000010936 titanium Substances 0.000 claims description 49
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 47
- 229910052719 titanium Inorganic materials 0.000 claims description 47
- 229910052759 nickel Inorganic materials 0.000 claims description 46
- 229910000679 solder Inorganic materials 0.000 claims description 31
- 239000011135 tin Substances 0.000 claims description 24
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 22
- 229910052718 tin Inorganic materials 0.000 claims description 21
- 229910000765 intermetallic Inorganic materials 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 50
- 239000000463 material Substances 0.000 description 11
- 239000010931 gold Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 229910001128 Sn alloy Inorganic materials 0.000 description 6
- PRESPHWJFNSVAB-UHFFFAOYSA-N [Ti].[Ni].[Sn] Chemical compound [Ti].[Ni].[Sn] PRESPHWJFNSVAB-UHFFFAOYSA-N 0.000 description 5
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229940125810 compound 20 Drugs 0.000 description 3
- JAXFJECJQZDFJS-XHEPKHHKSA-N gtpl8555 Chemical compound OC(=O)C[C@H](N)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1CCC[C@@H]1C(=O)N[C@H](B1O[C@@]2(C)[C@H]3C[C@H](C3(C)C)C[C@H]2O1)CCC1=CC=C(F)C=C1 JAXFJECJQZDFJS-XHEPKHHKSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Description
近年、特にGaN(窒化ガリウム)やSiC(炭化ケイ素)を用いた半導体素子の開発が進む中、より過酷な環境下でのパワー半導体装置の用途が広がり、半導体装置を形成するワイヤボンディング材、ダイボンディング材、モールド樹脂材といった構成材料の高信頼性の要求が強くなっている。
また、ダイボンディング時の初期にチタン膜の内部に形成されるチタン、ニッケル及び錫の金属間化合物は、200度を超える高温環境下においでも成長が殆どなく、かつ強固な接合を維持することから、半導体装置の高耐熱化を図ることができるという利点がある。
従来では、図4に示したように、温度範囲が−65度〜+200度の1000サイクル実験において、数百サイクルで剥離・クラックが入ったが、実施例の半導体装置では、1000サイクルの後でも全く剥離・クラックが入らず、非常に高い信頼性が確認された。
13…ニッケル膜、 14…金膜、
16…半田、 17…回路基板、
18…チタン層、 18G…純チタン層、
20…金属間化合物、
20a…チタン−ニッケル合金層、
20b…チタン−ニッケル−錫合金層
22…クラック、 23…モールド樹脂。
Claims (1)
- 半導体素子の電極として、無酸素下にて、素子側から順にチタン膜、ニッケル膜を形成し、
この半導体素子の電極を、錫含有の半田を用いて回路部材にダイボンディングすることにより、上記電極のチタン膜の内部に、上記ニッケル膜からニッケルが拡散して、該ニッケルと上記チタン膜のチタンとの2金属からなる第1金属間化合物を形成すると共に、
上記電極のチタン膜の内部に更に半田から錫が拡散して、チタン、ニッケル及び錫の3金属からなる第2金属間化合物を形成し、
上記半導体素子と半田層との間に純チタン層、上記2金属からなる第1金属間化合物層、上記3金属からなる第2金属間化合物層を介して、上記半導体素子の電極を回路部材に接合したことを特徴とする半導体装置の製造方法。
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JP2014097351A JP6356478B2 (ja) | 2014-05-09 | 2014-05-09 | 半導体装置の製造方法 |
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JP2015216188A JP2015216188A (ja) | 2015-12-03 |
JP6356478B2 true JP6356478B2 (ja) | 2018-07-11 |
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JP2014097351A Active JP6356478B2 (ja) | 2014-05-09 | 2014-05-09 | 半導体装置の製造方法 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114864396B (zh) * | 2022-04-13 | 2023-03-28 | 湖南楚微半导体科技有限公司 | 一种晶圆背面金属化的方法及晶圆背面金属化结构 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07105586B2 (ja) * | 1992-09-15 | 1995-11-13 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体チップ結合構造 |
JP2005026612A (ja) * | 2003-07-02 | 2005-01-27 | Denso Corp | 半導体装置 |
JP4882229B2 (ja) * | 2004-09-08 | 2012-02-22 | 株式会社デンソー | 半導体装置およびその製造方法 |
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