JP6340706B2 - 研磨後の半導体ウエハからリング状の補強縁部を除去する装置 - Google Patents
研磨後の半導体ウエハからリング状の補強縁部を除去する装置 Download PDFInfo
- Publication number
- JP6340706B2 JP6340706B2 JP2016524835A JP2016524835A JP6340706B2 JP 6340706 B2 JP6340706 B2 JP 6340706B2 JP 2016524835 A JP2016524835 A JP 2016524835A JP 2016524835 A JP2016524835 A JP 2016524835A JP 6340706 B2 JP6340706 B2 JP 6340706B2
- Authority
- JP
- Japan
- Prior art keywords
- carrier film
- reinforcing edge
- semiconductor wafer
- tool
- guide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003014 reinforcing effect Effects 0.000 title claims description 72
- 239000004065 semiconductor Substances 0.000 title claims description 40
- 230000005855 radiation Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 11
- 230000003993 interaction Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 58
- 238000000926 separation method Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000009420 retrofitting Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1126—Using direct fluid current against work during delaminating
- Y10T156/1132—Using vacuum directly against work during delaminating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
- Y10T156/1158—Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1168—Gripping and pulling work apart during delaminating
- Y10T156/1179—Gripping and pulling work apart during delaminating with poking during delaminating [e.g., jabbing, etc.]
- Y10T156/1184—Piercing layer during delaminating [e.g., cutting, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1911—Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]
- Y10T156/1917—Electromagnetic radiation delaminating means [e.g., microwave, uv, ir, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1928—Differential fluid pressure delaminating means
- Y10T156/1944—Vacuum delaminating means [e.g., vacuum chamber, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
- Y10T156/1967—Cutting delaminating means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
Claims (12)
- リング状の補強縁部(2)を研磨された半導体ウエハ(3)から除去するための装置であって、該半導体ウエハは弾性を備えたキャリアフィルム(4)と材料接合され、及び前記キャリアフィルム(4)を介して周りを囲むウエハフレーム(11)に固定され、保持装置(7)を備えており、該保持装置が前記半導体ウエハ(3)を前記サポート部(8)のサポート面(16)に保持するために吸引開口部(9)を具備したサポート部(8)を備え、および前記補強縁部(2)を前記キャリアフィルム(4)から一体的に外す手段を含む分離装置(6)を備えた装置において、前記保持装置(7)が、前記ウエハフレーム(11)及び/又は前記キャリアフィルム(4)を挟み込むための前記サポート部(8)を囲む、クランプ装置(10)を備え、その際前記クランプ装置(10)は、前記キャリアフィルム(4)の伸展のために前記サポート部(8)と相互作用し、前記分離装置(6)が、クランプ装置(10)とサポート部(8)との相互作用によってキャリアフィルム(4)から補強縁部(2)を一体的に外すために、分割工具(12)をキャリアフィルム(4)と補強縁部(2)との間で動かすための分割工具(12)を具備する工具ガイド(13)を備えていることを特徴とする、装置。
- 前記保持装置(7)が、前記キャリアフィルム(4)を伸展するために、クランプ装置(10)とサポート部(8)との間に備えられたガイド部(14)、特に直線ガイド部を有することを特徴とする、請求項1に記載の装置。
- ガイド路(15)が、キャリアフィルム(4)と補強縁部(2)との間の前記材料接合で殻に負荷をかけるために、前記サポート部(8)の前記サポート面(16)に対して特に垂直に傾斜して伸びていることを特徴とする、請求項2に記載の装置。
- 前記ガイド部(14)が前記クランプ装置(10)を、前記前記サポート面(16)と平らな開始位置(17)から、サポート面(16)に対して戻されたクランプ位置(28)に可動に支承され得ることを特徴とする、請求項2又は3に記載の装置。
- 前記クランプ装置(10)がキャリアフィルム(4)及び/又は前記ウエハフレーム(11)を吸引するための吸引開口部(9)を備えていることを特徴とする、請求項1〜4のうちのいずれか一項に記載の装置。
- 保持装置(7)と分割工具(12)との間に自在軸受(19)が備えられていることを特徴とする、請求項1〜5のうちのいずれか一項に記載の装置。
- 前記自在軸受(19)の回転軸(20)が工具ガイド(13)のガイド部軸(21)に対して傾斜して、特に垂直に伸びていることを特徴とする、請求項6に記載の装置。
- 前記分割工具(12)がウェッジカット部(22)を備え、特に刃(23)又は刀として仕上げられていることを特徴とする、請求項1〜7のうちのいずれか一項に記載の装置。
- 前記分離装置(6)が、キャリアフィルム(4)と補強縁部(2)との間の前記材料接合を柔らかくするために、前記補強縁部(2)に向けられた放射源(24)を備えていることを特徴とする、請求項1〜8のうちのいずれか一項に記載の装置。
- 前記放射源(24)が、前記前記放射源(24)の前記補強縁部(2)への放射(26)を制限するために絞り(25)後付けされていることを特徴とする、請求項9に記載の装置。
- 前記サポート部(8)が、前記半導体ウエハ(3)をキャリアフィルム(4)のところで吸引することを特徴とする、請求項1〜10のうちのいずれか一項に記載の装置。
- 前記サポート部(8)の前記吸引開口部(9)が前記補強縁部(2)の前記内側(27)に周りを囲むように環状に配置されていることを特徴とする、請求項1〜11のうちのいずれか一項に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13175880.7 | 2013-07-10 | ||
EP13175880.7A EP2824697A1 (de) | 2013-07-10 | 2013-07-10 | Vorrichtung zum Entfernen eines ringförmigen Verstärkungsrands von einem geschliffenen Halbleiterwafer |
PCT/EP2014/064877 WO2015004262A1 (de) | 2013-07-10 | 2014-07-10 | Vorrichtung zum entfernen eines ringförmigen verstärkungsrands von einem geschliffenen halbleiterwafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016525280A JP2016525280A (ja) | 2016-08-22 |
JP6340706B2 true JP6340706B2 (ja) | 2018-06-13 |
Family
ID=48874114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016524835A Active JP6340706B2 (ja) | 2013-07-10 | 2014-07-10 | 研磨後の半導体ウエハからリング状の補強縁部を除去する装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9905445B2 (ja) |
EP (2) | EP2824697A1 (ja) |
JP (1) | JP6340706B2 (ja) |
WO (1) | WO2015004262A1 (ja) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4403567A (en) * | 1980-08-21 | 1983-09-13 | Commonwealth Scientific Corporation | Workpiece holder |
JP4319859B2 (ja) * | 2003-05-29 | 2009-08-26 | リンテック株式会社 | 脆質部材の剥離方法 |
JP4874602B2 (ja) * | 2005-08-26 | 2012-02-15 | 株式会社ディスコ | ウエーハの加工方法およびウエーハの加工方法に用いる粘着テープ |
JP4741332B2 (ja) * | 2005-09-30 | 2011-08-03 | 株式会社ディスコ | ウエーハの加工方法 |
FR2925978B1 (fr) * | 2007-12-28 | 2010-01-29 | Commissariat Energie Atomique | Procede et dispositif de separation d'une structure. |
JP2010062375A (ja) * | 2008-09-04 | 2010-03-18 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2010186971A (ja) | 2009-02-13 | 2010-08-26 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP5357669B2 (ja) * | 2009-08-28 | 2013-12-04 | 株式会社ディスコ | ウエーハの加工方法 |
JP5523033B2 (ja) * | 2009-09-14 | 2014-06-18 | 株式会社ディスコ | ウエーハの加工方法及び環状凸部除去装置 |
JP5553586B2 (ja) * | 2009-12-08 | 2014-07-16 | 株式会社ディスコ | ウエーハの加工方法 |
-
2013
- 2013-07-10 EP EP13175880.7A patent/EP2824697A1/de not_active Withdrawn
-
2014
- 2014-07-10 WO PCT/EP2014/064877 patent/WO2015004262A1/de active Application Filing
- 2014-07-10 EP EP14744291.7A patent/EP3020066B1/de active Active
- 2014-07-10 JP JP2016524835A patent/JP6340706B2/ja active Active
- 2014-07-10 US US14/903,741 patent/US9905445B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2824697A1 (de) | 2015-01-14 |
JP2016525280A (ja) | 2016-08-22 |
US9905445B2 (en) | 2018-02-27 |
US20160163571A1 (en) | 2016-06-09 |
WO2015004262A1 (de) | 2015-01-15 |
EP3020066B1 (de) | 2022-01-05 |
EP3020066A1 (de) | 2016-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6156509B2 (ja) | 半導体素子の製造方法 | |
KR102272434B1 (ko) | 웨이퍼의 가공 방법 | |
JP5654810B2 (ja) | ウェーハの加工方法 | |
JP5595716B2 (ja) | 光デバイスウエーハの加工方法 | |
JP5888935B2 (ja) | 保持テーブル | |
KR102277934B1 (ko) | 반도체 디바이스 칩의 제조 방법 | |
JP6034219B2 (ja) | ウエーハの加工方法 | |
JP2010027857A (ja) | 半導体デバイスの製造方法 | |
JP2019110198A (ja) | 被加工物の加工方法 | |
JP2011091293A (ja) | ウエーハの加工方法 | |
JP4680693B2 (ja) | 板状部材の分割装置 | |
JP2017103405A (ja) | ウエーハの加工方法 | |
JP2015032690A (ja) | 積層ウェーハの加工方法 | |
JP2017103406A (ja) | ウエーハの加工方法 | |
JP5636266B2 (ja) | ワークの加工方法及びダイシングテープ | |
JP6009240B2 (ja) | ウェーハの加工方法 | |
JP2009253019A (ja) | 半導体チップのピックアップ装置及び半導体チップのピックアップ方法 | |
JP2023037281A (ja) | 半導体ウェハ製造方法 | |
JP2008263070A (ja) | デバイスの製造方法 | |
JP6340706B2 (ja) | 研磨後の半導体ウエハからリング状の補強縁部を除去する装置 | |
JP2016111121A (ja) | ウェーハの加工方法 | |
JP2011151070A (ja) | ウエーハの加工方法 | |
JP6298699B2 (ja) | ウェーハの加工方法 | |
JP2016219757A (ja) | 被加工物の分割方法 | |
CN104253018B (zh) | 半导体装置的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170630 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171013 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180316 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180327 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180426 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6340706 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |