JP6328258B2 - 半導体層積層体を製造するための方法およびオプトエレクトロニクス半導体部品 - Google Patents
半導体層積層体を製造するための方法およびオプトエレクトロニクス半導体部品 Download PDFInfo
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- JP6328258B2 JP6328258B2 JP2016553902A JP2016553902A JP6328258B2 JP 6328258 B2 JP6328258 B2 JP 6328258B2 JP 2016553902 A JP2016553902 A JP 2016553902A JP 2016553902 A JP2016553902 A JP 2016553902A JP 6328258 B2 JP6328258 B2 JP 6328258B2
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- semiconductor layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Description
− 成長側に成長表面を有する成長基板を用意するステップと、
− 成長側に第1の窒化物半導体層を成長させるステップと、
− 第1の窒化物半導体層上に第2の窒化物半導体層を成長させるステップであって、第2の窒化物半導体層が少なくとも1つの開口部を含む、または少なくとも1つの開口部が第2の窒化物半導体層内に作られる、または少なくとも1つの開口部が成長させるステップ中に第2の窒化物半導体層内に作成される、第2の窒化物半導体層を成長させるステップと、
− 第2の窒化物半導体層内の開口部を通して第1の窒化物半導体層の少なくとも一部分を除去するステップと、
− 第2の窒化物半導体層上に第3の窒化物半導体層を成長させるステップであって、第3の窒化物半導体層が少なくとも所々で開口部を覆う、第3の窒化物半導体層を成長させるステップと、
を含む。
20 第2の窒化物半導体層
21 開口部
22 カバー表面
23 横方向表面
30 第3の窒化物半導体層
31 能動ゾーン
32 光
50 成長基板
51 成長表面
50a 成長側
60 キャビティ
61 キャビティの端部
Claims (8)
- 半導体層積層体を製造するための方法であって、
成長側(50a)に成長表面(51)を有する成長基板(50)を用意するステップと、
前記成長側に第1の窒化物半導体層(10)を成長させるステップと、
前記第1の窒化物半導体層(10)上に第2の窒化物半導体層(20)を、前記第2の窒化物半導体層(20)の成長プロセス中に少なくとも1つの開口部(21)が前記第2の窒化物半導体層(20)内に作成されるように、成長させるステップと、
前記第2の窒化物半導体層(20)内の前記開口部(21)を通して前記第1の窒化物半導体層(10)の少なくとも一部分を除去するステップと、
第3の窒化物半導体層(30)が少なくとも所々で前記開口部(21)を覆うように、前記第2の窒化物半導体層(20)上に前記第3の窒化物半導体層(30)を成長させるステップと、
を含む、方法。 - 前記第2の窒化物半導体層(20)のアルミニウム濃度が、前記第1の窒化物半導体層(10)よりも高い、
請求項1に記載の方法。 - マスク層(40)が、前記第1の窒化物半導体層(10)と前記第2の窒化物半導体層(20)との間に配置され、
前記第2の窒化物半導体層(20)は、前記第1の窒化物半導体層(10)が前記マスク層(40)によって覆われていない場所で前記第1の窒化物半導体層(10)上に成長され、
前記第1の窒化物半導体層(10)から反対に面する前記マスク層(40)の表面の少なくとも一部分に、前記第2の窒化物半導体層(20)の材料がなく、これによって、前記第2の窒化物半導体層(20)が前記少なくとも1つの開口部(21)を含む、
請求項1または2に記載の方法。 - 前記マスク層(40)が、前記第1の窒化物半導体層(10)の少なくとも一部分の前記除去に先立って除去される、
請求項3に記載の方法。 - 前記第2の窒化物半導体層(20)の前記成長中に、前記第2の窒化物半導体層(20)内に前記開口部(21)を形成するクラックが、前記第2の窒化物半導体層(20)内に作られ、
前記開口部(21)の少なくともいくつかが、前記第1の窒化物半導体層(10)から反対に面する前記第2の窒化物半導体層(20)の上面から前記第2の窒化物半導体層(20)を貫通して前記第1の窒化物半導体層(10)まで完全に延びる、
請求項1〜4のいずれか一項に記載の方法。 - 前記第1の窒化物半導体層(10)の少なくとも一部分が、水素の流れを増加させること、および/または、NH3の流れを減少させることによって除去され、
前記第1の窒化物半導体層(10)が、前記水素と前記第1の窒化物半導体層(10)の材料との間の化学反応のために除去される、
請求項1〜5のいずれか一項に記載の方法。 - 前記水素の流れが、前記温度を高くする間、および/または、窒素の流れを減少させる間、増加される、
請求項6に記載の方法。 - 前記第3の窒化物半導体層(30)が、放射を発生させるため、または、放射を検出するために設けられた能動ゾーン(31)を含む、
請求項1〜7のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014102461.3A DE102014102461A1 (de) | 2014-02-25 | 2014-02-25 | Verfahren zur Herstellung einer Halbleiterschichtenfolge und optoelektronisches Halbleiterbauteil |
DE102014102461.3 | 2014-02-25 | ||
PCT/EP2015/053818 WO2015128319A1 (de) | 2014-02-25 | 2015-02-24 | Verfahren zur herstellung einer halbleiterschichtenfolge und optoelektronisches halbleiterbauteil |
Publications (2)
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JP2017510984A JP2017510984A (ja) | 2017-04-13 |
JP6328258B2 true JP6328258B2 (ja) | 2018-05-23 |
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JP2016553902A Expired - Fee Related JP6328258B2 (ja) | 2014-02-25 | 2015-02-24 | 半導体層積層体を製造するための方法およびオプトエレクトロニクス半導体部品 |
Country Status (5)
Country | Link |
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US (1) | US9761755B2 (ja) |
JP (1) | JP6328258B2 (ja) |
CN (1) | CN106030831B (ja) |
DE (2) | DE102014102461A1 (ja) |
WO (1) | WO2015128319A1 (ja) |
Families Citing this family (2)
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JP6686876B2 (ja) * | 2016-12-28 | 2020-04-22 | 豊田合成株式会社 | 半導体構造体および半導体素子 |
US20180372872A1 (en) * | 2017-06-23 | 2018-12-27 | Kabushiki Kaisha Toshiba | Photodetector, method of manufacturing photodetector, and lidar apparatus |
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US6091085A (en) | 1998-02-19 | 2000-07-18 | Agilent Technologies, Inc. | GaN LEDs with improved output coupling efficiency |
JP3471700B2 (ja) * | 1999-03-17 | 2003-12-02 | 三菱電線工業株式会社 | 半導体基材 |
TWI292227B (en) | 2000-05-26 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan |
JP3589200B2 (ja) * | 2000-06-19 | 2004-11-17 | 日亜化学工業株式会社 | 窒化物半導体基板及びその製造方法、並びにその窒化物半導体基板を用いた窒化物半導体素子 |
JP2003258297A (ja) * | 2002-02-27 | 2003-09-12 | Shiro Sakai | 窒化ガリウム系化合物半導体装置 |
US6888170B2 (en) * | 2002-03-15 | 2005-05-03 | Cornell Research Foundation, Inc. | Highly doped III-nitride semiconductors |
JP4223797B2 (ja) * | 2002-12-19 | 2009-02-12 | 株式会社東芝 | 窒化物系半導体発光素子およびその製造方法 |
JP2008041841A (ja) * | 2006-08-03 | 2008-02-21 | Sharp Corp | 半導体発光装置および半導体発光装置の製造方法 |
JP5480624B2 (ja) * | 2006-10-08 | 2014-04-23 | モーメンティブ・パフォーマンス・マテリアルズ・インク | 窒化物結晶の形成方法 |
TW200929593A (en) * | 2007-12-20 | 2009-07-01 | Nat Univ Tsing Hua | Light source with reflective pattern structure |
KR101020961B1 (ko) * | 2008-05-02 | 2011-03-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
JP5330040B2 (ja) * | 2009-03-17 | 2013-10-30 | 株式会社東芝 | 半導体素子、半導体装置、半導体ウェーハ及び半導体結晶の成長方法 |
TWI487141B (zh) * | 2009-07-15 | 2015-06-01 | Advanced Optoelectronic Tech | 提高光萃取效率之半導體光電結構及其製造方法 |
KR101640830B1 (ko) * | 2009-08-17 | 2016-07-22 | 삼성전자주식회사 | 기판 구조체 및 그 제조 방법 |
CN102237454A (zh) * | 2010-04-29 | 2011-11-09 | 展晶科技(深圳)有限公司 | 半导体光电元件及其制造方法 |
KR101253198B1 (ko) * | 2011-07-05 | 2013-04-10 | 엘지전자 주식회사 | 무분극 이종 기판, 이를 이용한 질화물계 발광 소자 및 그 제조방법 |
TWI460885B (zh) * | 2011-12-09 | 2014-11-11 | Univ Nat Chiao Tung | 具有空氣介質層之半導體光電元件及空氣介質層之製作方法 |
JP5460751B2 (ja) * | 2012-01-16 | 2014-04-02 | 株式会社東芝 | 半導体装置 |
TWI474510B (zh) * | 2012-07-06 | 2015-02-21 | 隆達電子股份有限公司 | 具有孔隙之磊晶結構及其成長方法 |
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2014
- 2014-02-25 DE DE102014102461.3A patent/DE102014102461A1/de not_active Withdrawn
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2015
- 2015-02-24 CN CN201580010404.1A patent/CN106030831B/zh not_active Expired - Fee Related
- 2015-02-24 DE DE112015000958.2T patent/DE112015000958A5/de not_active Withdrawn
- 2015-02-24 JP JP2016553902A patent/JP6328258B2/ja not_active Expired - Fee Related
- 2015-02-24 US US15/120,552 patent/US9761755B2/en not_active Expired - Fee Related
- 2015-02-24 WO PCT/EP2015/053818 patent/WO2015128319A1/de active Application Filing
Also Published As
Publication number | Publication date |
---|---|
DE112015000958A5 (de) | 2016-11-03 |
CN106030831A (zh) | 2016-10-12 |
JP2017510984A (ja) | 2017-04-13 |
US9761755B2 (en) | 2017-09-12 |
CN106030831B (zh) | 2018-11-27 |
WO2015128319A1 (de) | 2015-09-03 |
US20170012165A1 (en) | 2017-01-12 |
DE102014102461A1 (de) | 2015-08-27 |
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