JP6327970B2 - 絶縁膜をエッチングする方法 - Google Patents

絶縁膜をエッチングする方法 Download PDF

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Publication number
JP6327970B2
JP6327970B2 JP2014126520A JP2014126520A JP6327970B2 JP 6327970 B2 JP6327970 B2 JP 6327970B2 JP 2014126520 A JP2014126520 A JP 2014126520A JP 2014126520 A JP2014126520 A JP 2014126520A JP 6327970 B2 JP6327970 B2 JP 6327970B2
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Japan
Prior art keywords
frequency power
period
insulating film
gas
etching
Prior art date
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JP2014126520A
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English (en)
Japanese (ja)
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JP2016004983A5 (enExample
JP2016004983A (ja
Inventor
高橋　陽
陽 高橋
渓 中山
渓 中山
義樹 五十嵐
義樹 五十嵐
信 広津
信 広津
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2014126520A priority Critical patent/JP6327970B2/ja
Priority to US14/730,394 priority patent/US9312105B2/en
Priority to KR1020150078977A priority patent/KR101799149B1/ko
Priority to SG10201504420RA priority patent/SG10201504420RA/en
Priority to CN201510303252.6A priority patent/CN105304484B/zh
Priority to TW104118241A priority patent/TWI632606B/zh
Publication of JP2016004983A publication Critical patent/JP2016004983A/ja
Publication of JP2016004983A5 publication Critical patent/JP2016004983A5/ja
Application granted granted Critical
Publication of JP6327970B2 publication Critical patent/JP6327970B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H10P14/69215—
    • H10P50/242—
    • H10P50/244—
    • H10P50/268—
    • H10P50/283—
    • H10P50/73—
    • H10P72/0421—
    • H10W20/081—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
JP2014126520A 2014-06-19 2014-06-19 絶縁膜をエッチングする方法 Active JP6327970B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014126520A JP6327970B2 (ja) 2014-06-19 2014-06-19 絶縁膜をエッチングする方法
KR1020150078977A KR101799149B1 (ko) 2014-06-19 2015-06-04 절연막을 에칭하는 방법
US14/730,394 US9312105B2 (en) 2014-06-19 2015-06-04 Method for etching insulation film
CN201510303252.6A CN105304484B (zh) 2014-06-19 2015-06-05 绝缘膜的蚀刻方法
SG10201504420RA SG10201504420RA (en) 2014-06-19 2015-06-05 Method For Etching Insulation Film
TW104118241A TWI632606B (zh) 2014-06-19 2015-06-05 Method of etching an insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014126520A JP6327970B2 (ja) 2014-06-19 2014-06-19 絶縁膜をエッチングする方法

Publications (3)

Publication Number Publication Date
JP2016004983A JP2016004983A (ja) 2016-01-12
JP2016004983A5 JP2016004983A5 (enExample) 2017-04-13
JP6327970B2 true JP6327970B2 (ja) 2018-05-23

Family

ID=54870293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014126520A Active JP6327970B2 (ja) 2014-06-19 2014-06-19 絶縁膜をエッチングする方法

Country Status (6)

Country Link
US (1) US9312105B2 (enExample)
JP (1) JP6327970B2 (enExample)
KR (1) KR101799149B1 (enExample)
CN (1) CN105304484B (enExample)
SG (1) SG10201504420RA (enExample)
TW (1) TWI632606B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6315809B2 (ja) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
JP6410592B2 (ja) * 2014-12-18 2018-10-24 東京エレクトロン株式会社 プラズマエッチング方法
JP6568822B2 (ja) * 2016-05-16 2019-08-28 東京エレクトロン株式会社 エッチング方法
JP6811202B2 (ja) * 2018-04-17 2021-01-13 東京エレクトロン株式会社 エッチングする方法及びプラズマ処理装置
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
FR3091410B1 (fr) 2018-12-26 2021-01-15 St Microelectronics Crolles 2 Sas Procédé de gravure
WO2021090516A1 (ja) * 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
JP7382848B2 (ja) * 2020-02-20 2023-11-17 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7433095B2 (ja) * 2020-03-18 2024-02-19 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102897387B1 (ko) * 2023-11-30 2025-12-05 앱솔릭스 인코포레이티드 패키징 기판의 제조방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3559429B2 (ja) * 1997-07-02 2004-09-02 松下電器産業株式会社 プラズマ処理方法
US6589437B1 (en) * 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
KR100317915B1 (ko) 1999-03-22 2001-12-22 윤종용 플라즈마 식각 장치
JP4819267B2 (ja) * 1999-08-17 2011-11-24 東京エレクトロン株式会社 パルスプラズマ処理方法および装置
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
KR101248691B1 (ko) * 2004-06-21 2013-04-03 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP5390846B2 (ja) * 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
JP5221403B2 (ja) * 2009-01-26 2013-06-26 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置および記憶媒体
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
JP2012142495A (ja) 2011-01-05 2012-07-26 Ulvac Japan Ltd プラズマエッチング方法及びプラズマエッチング装置
JP5804978B2 (ja) * 2011-03-03 2015-11-04 東京エレクトロン株式会社 プラズマエッチング方法及びコンピュータ記録媒体
JP5977509B2 (ja) 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Also Published As

Publication number Publication date
KR101799149B1 (ko) 2017-11-17
US20150371830A1 (en) 2015-12-24
US9312105B2 (en) 2016-04-12
CN105304484B (zh) 2018-04-10
KR20150146394A (ko) 2015-12-31
TWI632606B (zh) 2018-08-11
SG10201504420RA (en) 2016-01-28
CN105304484A (zh) 2016-02-03
JP2016004983A (ja) 2016-01-12
TW201611117A (zh) 2016-03-16

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