JP6304378B2 - 共振回路用複合電子部品、および、共振回路装置 - Google Patents
共振回路用複合電子部品、および、共振回路装置 Download PDFInfo
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- 239000002131 composite material Substances 0.000 claims description 105
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- 238000010030 laminating Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 74
- 239000011347 resin Substances 0.000 description 52
- 229920005989 resin Polymers 0.000 description 52
- 239000000758 substrate Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 17
- 229910000679 solder Inorganic materials 0.000 description 12
- 101100238374 Arabidopsis thaliana MPS1 gene Proteins 0.000 description 9
- 101100521063 Arabidopsis thaliana PRD3 gene Proteins 0.000 description 9
- 101150054516 PRD1 gene Proteins 0.000 description 9
- 101100459905 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) NCP1 gene Proteins 0.000 description 9
- 238000010897 surface acoustic wave method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
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- 239000010949 copper Substances 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 3
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
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- 230000006866 deterioration Effects 0.000 description 1
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- 230000002093 peripheral effect Effects 0.000 description 1
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- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H1/0007—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network of radio frequency interference filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
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- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
- H03H9/0552—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the device and the other elements being mounted on opposite sides of a common substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2210/00—Indexing scheme relating to details of tunable filters
- H03H2210/02—Variable filter component
- H03H2210/025—Capacitor
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Filters And Equalizers (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Coils Or Transformers For Communication (AREA)
Description
P1:第1入出力端子
P2:第2入出力端子
PR,PR1,PR2,PRD1,PRD2,PRD3,PRD11,PRD12,PRD13,PRD21,PRD22,PRD23,PRD24:圧電共振素子
VC11,VC12,VC21,VC22:可変コンデンサ
1,1C:共振回路装置
10,10A,10B,10C,10C1,10C2,10D,10E,10F:共振回路用複合電子部品
20,20C1,20C2:実装型インダクタ素子
30,30C:基板
31,32:実装用ランド
90:フィルタ回路
91,92:可変共振回路
110:圧電共振器
111,112:端子導体
120,120B1,120B2,120C1,120C2:可変コンデンサ
121,122,123,124:端子導体
130:カバー層
131:空隙
141,142:ビア導体
151,152,153,153C:端子導体
160,160C,160D,160E1,160E2:絶縁性樹脂
160DM:レジスト
171,172,173,1741,1742,1743,1751,1752:ビア導体
171S,172S,1742S,1743S,1752S:ビア
181,182,183,1842,185,181D,1821D,1822D,183D,186F:外部接続用端子導体
185:引き回し導体
190:保護層
191:はんだボール
191S:ビア
311,312,321,322:実装用ランド
1200:接着層
1521,1522,1531,1532,1533,1531A,1532A:接続用導体
1601,1602,1603:絶縁性樹脂
1721,1722,1741,1742,1743,1744,1751,1752,1741A,1742A,1743A,1744A,1745A,1711D,1712D,1713D,1721D,1722D,1723D,1714E,1715E,1716E,1717E,1724E,1725E,1726E,1727E,1731E,1732E:ビア導体
1821D,1822D,1841E,1842,1843A,1851E:外部接続用端子導体
1823E,1824E,1825E,1841,1841A,1842A,185:引き回し導体
1842E,1843E,1852E,1853E:端子導体
1900F:インダクタ用導体部
Claims (9)
- 共振回路を構成する第1回路素子および第2回路素子と、外部に接続される外部接続用端子が設けられた共振回路用複合電子部品であって、
前記第1回路素子の外部端子および前記第2回路素子の外部端子を前記外部接続用端子にそれぞれに接続する複数の引き回し導体を備え、
前記複数の引き回し導体の少なくとも1つは、実装面に対して平行にならない方向に延び、前記共振回路用複合電子部品の厚み方向における形成位置が前記第2回路素子と少なくとも部分的に重なるインダクタ用導体部を備え、
前記インダクタ用導体部は、前記第2回路素子の厚み方向を複数回経由する形状からなる、
共振回路用複合電子部品。 - 前記第1回路素子の実装面と前記第2回路素子の実装面とが略平行になるように、前記第1回路素子と前記第2回路素子とが積層された状態で内蔵され、積層方向に沿った前記第2回路素子側の面の外面側に外部接続用端子が設けられた積層部材を備え、
前記複数の引き回し導体の少なくとも1つは、少なくとも前記第2回路素子の厚みよりも長いインダクタ用導体部を備える、
請求項1に記載の共振回路用複合電子部品。 - 前記インダクタ用導体部は、
前記積層方向に沿って延びる形状からなる、
請求項2に記載の共振回路用複合電子部品。 - 前記第1回路素子の平面面積は、前記第2回路素子の平面面積よりも広く、
前記積層部材を前記外部接続用端子が形成された面から視て、
前記第1回路素子と前記第2回路素子は重なり合っており、
前記インダクタ用導体部は、前記第1回路素子と前記第2回路素子とが重なり合わない領域に設けられている、
請求項2または請求項3に記載の共振回路用複合電子部品。 - 請求項1乃至請求項4のいずれか1項に記載の共振回路用複合電子部品と、
実装型インダクタ素子と、
前記共振回路用複合電子部品と前記実装型インダクタ素子とが実装される基板と、
を備え、
前記実装型インダクタ素子と前記インダクタ用導体部とは接続されている、
共振回路装置。 - 前記インダクタ用導体部は、前記共振回路用複合電子部品の共振周波数をシフトさせる機能を有する、請求項5に記載の共振回路装置。
- 前記共振回路が可変フィルタである、請求項5または請求項6に記載の共振回路装置。
- 前記第1回路素子および前記第2回路素子のうち少なくとも1つは、共振子である、請求項5乃至請求項7のいずれか1項に記載の共振回路装置。
- 前記第1回路素子および前記第2回路素子のうち少なくとも1つは、可変容量素子である、請求項5乃至請求項7のいずれか1項に記載の共振回路装置。
Applications Claiming Priority (3)
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JP2014124910 | 2014-06-18 | ||
JP2014124910 | 2014-06-18 | ||
PCT/JP2015/067409 WO2015194581A1 (ja) | 2014-06-18 | 2015-06-17 | 共振回路用複合電子部品、および、共振回路装置 |
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JPWO2015194581A1 JPWO2015194581A1 (ja) | 2017-04-20 |
JP6304378B2 true JP6304378B2 (ja) | 2018-04-04 |
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US (1) | US10075148B2 (ja) |
JP (1) | JP6304378B2 (ja) |
CN (1) | CN106464224B (ja) |
WO (1) | WO2015194581A1 (ja) |
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DE112014003731B4 (de) * | 2013-08-14 | 2022-07-28 | Murata Manufacturing Co., Ltd. | Bauelement für elastische Oberflächenwellen und elektronische Komponente |
US20240203938A1 (en) * | 2022-12-15 | 2024-06-20 | Qualcomm Incorporated | Integrated bare die package, and related fabrication methods |
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JP3982182B2 (ja) * | 2001-02-01 | 2007-09-26 | セイコーエプソン株式会社 | 弾性表面波装置及びその製造方法 |
KR100716155B1 (ko) * | 2001-03-08 | 2007-05-10 | 엘지이노텍 주식회사 | 매칭회로가 내장된 표면탄성파 필터 패키지 |
JP2006333168A (ja) * | 2005-05-27 | 2006-12-07 | Kyocera Corp | 高周波モジュール |
JP2011211347A (ja) * | 2010-03-29 | 2011-10-20 | Ube Industries Ltd | 圧電デバイスおよびこれを用いた集積化分波器、集積化フィルタ |
CN104126275A (zh) | 2012-02-20 | 2014-10-29 | 株式会社村田制作所 | 可调滤波器装置 |
WO2014045726A1 (ja) * | 2012-09-19 | 2014-03-27 | 株式会社村田製作所 | フィルタ装置 |
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2015
- 2015-06-17 WO PCT/JP2015/067409 patent/WO2015194581A1/ja active Application Filing
- 2015-06-17 JP JP2016529394A patent/JP6304378B2/ja active Active
- 2015-06-17 CN CN201580031052.8A patent/CN106464224B/zh active Active
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CN106464224A (zh) | 2017-02-22 |
US20170126201A1 (en) | 2017-05-04 |
WO2015194581A1 (ja) | 2015-12-23 |
CN106464224B (zh) | 2019-03-29 |
JPWO2015194581A1 (ja) | 2017-04-20 |
US10075148B2 (en) | 2018-09-11 |
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