JP6295957B2 - 導電性薄膜付きガラス基板の製造方法 - Google Patents

導電性薄膜付きガラス基板の製造方法 Download PDF

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JP6295957B2
JP6295957B2 JP2014542120A JP2014542120A JP6295957B2 JP 6295957 B2 JP6295957 B2 JP 6295957B2 JP 2014542120 A JP2014542120 A JP 2014542120A JP 2014542120 A JP2014542120 A JP 2014542120A JP 6295957 B2 JP6295957 B2 JP 6295957B2
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Prior art keywords
glass substrate
thin film
conductive thin
hydrogen fluoride
glass
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JP2014542120A
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Japanese (ja)
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JPWO2014061612A1 (ja
Inventor
澁谷　崇
崇 澁谷
直樹 岡畑
直樹 岡畑
淳 笹井
淳 笹井
勇介 森嶋
勇介 森嶋
元気 東原
元気 東原
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AGC Inc
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Asahi Glass Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C03C2217/948—Layers comprising indium tin oxide [ITO]
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/31—Pre-treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)
JP2014542120A 2012-10-17 2013-10-11 導電性薄膜付きガラス基板の製造方法 Active JP6295957B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012229515 2012-10-17
JP2012229515 2012-10-17
PCT/JP2013/077841 WO2014061612A1 (ja) 2012-10-17 2013-10-11 導電性薄膜付きガラス基板、薄膜太陽電池、低放射ガラス基板、導電性薄膜付きガラス基板の製造方法

Publications (2)

Publication Number Publication Date
JPWO2014061612A1 JPWO2014061612A1 (ja) 2016-09-05
JP6295957B2 true JP6295957B2 (ja) 2018-03-20

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JP2014542120A Active JP6295957B2 (ja) 2012-10-17 2013-10-11 導電性薄膜付きガラス基板の製造方法

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Country Link
JP (1) JP6295957B2 (zh)
CN (1) CN104718581B (zh)
WO (1) WO2014061612A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016004112A (ja) * 2014-06-16 2016-01-12 株式会社ジャパンディスプレイ 表示装置の製造方法
FR3042492B1 (fr) * 2015-10-16 2018-01-19 Saint-Gobain Glass France Procede de recuit rapide d'un empilement de couches minces contenant une surcouche a base d'indium
GB2582886B (en) * 2018-10-08 2023-03-29 Pilkington Group Ltd Process for preparing a coated glass substrate
CN115244334A (zh) 2020-02-07 2022-10-25 康宁公司 处理玻璃表面的方法和经处理的玻璃制品

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08165144A (ja) * 1994-12-12 1996-06-25 Teijin Ltd 透明導電性硝子および透明タブレット
JP3247876B2 (ja) * 1999-03-09 2002-01-21 日本板硝子株式会社 透明導電膜付きガラス基板
JP2001114534A (ja) * 1999-10-20 2001-04-24 Nippon Sheet Glass Co Ltd 金属酸化物膜付きガラス板およびその製造方法、ならびにこれを用いた複層ガラス
JP4256662B2 (ja) * 2001-11-08 2009-04-22 日本板硝子株式会社 皮膜被覆物品、およびその製造方法
JPWO2006068204A1 (ja) * 2004-12-21 2008-06-12 旭硝子株式会社 透明導電膜付き基板とそのパターニング方法
EP2172433A4 (en) * 2007-06-20 2012-12-19 Asahi Glass Co Ltd METHOD FOR TREATING THE SURFACE OF OXID GLASS WITH A FLUORIZING AGENT
JP4957625B2 (ja) * 2008-04-04 2012-06-20 旭硝子株式会社 透明基板の成膜方法
JP2010137220A (ja) * 2008-11-17 2010-06-24 Mitsubishi Materials Corp スプレーによる薄膜形成方法及びこの薄膜を用いた電極形成方法
EP2407575B1 (en) * 2009-03-13 2015-08-12 Sumitomo Metal Mining Co., Ltd. Transparent conductive film and transparent conductive film laminate, processes for production of same, and silicon thin film solar cell
JP2011110757A (ja) * 2009-11-25 2011-06-09 Teijin Chem Ltd 表示装置用基板
JP5431186B2 (ja) * 2010-01-25 2014-03-05 株式会社Ｎｓｃ 表示装置の製造方法
WO2011102350A1 (ja) * 2010-02-17 2011-08-25 住友金属鉱山株式会社 透明導電膜の製造方法及び透明導電膜、それを用いた素子、透明導電基板並びにそれを用いたデバイス
JP2011212988A (ja) * 2010-03-31 2011-10-27 Nippon Sheet Glass Co Ltd 透明導電膜付きガラス板およびその製造方法
JP5533448B2 (ja) * 2010-08-30 2014-06-25 住友金属鉱山株式会社 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法
JP2012138310A (ja) * 2010-12-28 2012-07-19 Konica Minolta Holdings Inc 有機電子デバイス用給電電極およびその製造方法
CN102324446A (zh) * 2011-09-13 2012-01-18 上海太阳能电池研究与发展中心 用于薄膜太阳电池的透明导电基板的制备方法

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Publication number Publication date
WO2014061612A1 (ja) 2014-04-24
CN104718581A (zh) 2015-06-17
CN104718581B (zh) 2018-04-13
JPWO2014061612A1 (ja) 2016-09-05

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