JP6281697B2 - フォトセンサ - Google Patents
フォトセンサ Download PDFInfo
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- JP6281697B2 JP6281697B2 JP2014083457A JP2014083457A JP6281697B2 JP 6281697 B2 JP6281697 B2 JP 6281697B2 JP 2014083457 A JP2014083457 A JP 2014083457A JP 2014083457 A JP2014083457 A JP 2014083457A JP 6281697 B2 JP6281697 B2 JP 6281697B2
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- lead
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- 238000007789 sealing Methods 0.000 claims description 205
- 229920005989 resin Polymers 0.000 claims description 95
- 239000011347 resin Substances 0.000 claims description 95
- 238000002834 transmittance Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 description 64
- 238000005452 bending Methods 0.000 description 48
- 238000000034 method Methods 0.000 description 27
- 230000008569 process Effects 0.000 description 22
- 239000003795 chemical substances by application Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000000465 moulding Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- WABPQHHGFIMREM-OUBTZVSYSA-N lead-208 Chemical compound [208Pb] WABPQHHGFIMREM-OUBTZVSYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0271—Housings; Attachments or accessories for photometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/02—Details
- H01L31/0224—Electrodes
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Geophysics And Detection Of Objects (AREA)
- Led Device Packages (AREA)
Description
[第1の処理]集積回路41は、受光信号の信号値が所定のしきい値以上である場合、発光素子42を点灯させる制御信号(ON信号:例えば、電源電圧Vccを出力する信号)を出力する。集積回路41は、受光信号の信号値が所定のしきい値未満である場合、発光素子42を消灯させる制御信号(OFF信号:例えば、0Vを出力する信号)を出力する。
[第2の処理]集積回路41は、受光信号の信号値が所定のしきい値以上である場合、発光素子42を消灯させる制御信号(OFF信号)を出力する。集積回路41は、受光信号の信号値が所定のしきい値未満である場合、発光素子42を点灯させる制御信号(ON信号)を出力する。
集積回路41は、ポートP1の電圧に応じて、上述する第1の処理と第2の処理とのうちのいずれの処理を行うかを切り換える。ポートP1の電圧は、電源電圧伝達配線44の突出部46が切断されているか否かによって異なる。図8を参照すると、電源電圧伝達配線44は、電源電圧VccをポートP1に向けて伝達するためのワイヤ配線及びリードである。電源電圧伝達配線44は、ワイヤ配線W2、W3、W4と、突出部46と、第1リード部32と、第2リード部34とを含む。第1リード部32と第2リード部34とは、本体リード部30に含まれる。つまり、本体リード部30は、第1リード部32と第2リード部34とを含む。突出部46が第1リード部32と第2リード部34とに接続されているとき、突出部46と第1リード部32と第2リード部34とが1つのリードとして形成される。つまり、リードフレーム8は、突出部46と第1リード部32と第2リード部34とを含む。
図6から図8までに示すように、回路封止部90は、回路部40を封止する。図12は、図7のセンサモジュール4の側面図である。図12(a)は、図7のセンサモジュール4の左側面図である。図12(b)は、図7のセンサモジュール4の右側面図である。図12は、投光素子11と、受光素子16と、発光素子42とを点線で示している。
図8を参照すると、複数の接続端子50は、上述する電源端子51と、グランド(GND)端子54と、第1端子52と、第3端子53とを含む。ここで、第1端子52と、第3端子53とを総称して、第1外部接続端子と呼ぶ。第1端子52及び第3端子53は、回路封止部90から突出する。すなわち、第1外部接続端子は、回路封止部90から突出する。また、電源端子51とグランド端子54とを総称して、第2外部接続端子と呼ぶ。電源端子51及びグランド端子54は、回路封止部90から突出する。すなわち、第2外部接続端子は、回路封止部90から突出する。
本実施形態に係るセンサモジュール5は、回路封止部90内の集積回路41のピン配置の制約もあり、投光リード20、22と、受光リード24、26とを左右方向に突出させている。また、センサモジュール5は、平面形状(ストレート)タイプと外形L字形状タイプの2種類に対応することができる。第1投光リード20、第2投光リード22、第1受光リード24、及び、第2受光リード26は、以下の特徴を有している。図7に示すように、第1投光リード20は、第1投光リード部202と、第2投光リード部204と、第3投光リード部206と、第4投光リード部208と、第5投光リード部210とを含む。
[条件1]図7のように第1投光リード20を展開させた状態において、第1投光リード20と折り曲げ線L1とのx軸方向の最大距離(第5投光リード部210と、折り曲げ線L1とのx軸方向の距離)が、図2に示す投光ケース部62の縦幅D31より小さい。
[条件2]図7のように第2投光リード22を展開させた状態において、第2投光リード22と折り曲げ線L1とのx軸方向の最大距離(第8投光リード部226と、折り曲げ線L1とのx軸方向の距離)が、図2に示す投光ケース部62の横幅D32より小さい。
[条件3]図7のように第1受光リード24を展開させた状態において、第1受光リード24と折り曲げ線L2とのx軸方向の最大距離(第5受光リード部250と、折り曲げ線L2とのx軸方向の距離)が、図2に示す受光ケース部63の縦幅D31より小さい。
[条件4]図7のように第2受光リード26を展開させた状態において、第2受光リード26と折り曲げ線L2とのx軸方向の最大距離(第8受光リード部266と、折り曲げ線L2とのx軸方向の距離)が、図2に示す受光ケース部63の横幅D33より小さい。
つぎに、上述するセンサモジュール5を収納するケースについて説明する。センサモジュール5をケース60に収納する際には、サブケース80も合わせて収納される。サブケース80は、センサモジュール5をケース60内に収納する際に、投光部10及び受光部15をガイドし、第1投光リード20、第2投光リード22、第1受光リード24、及び第2受光リード26がケース60の内壁と接触することによって変形することを防止する。図19(a)は、サブケース80の正面図である。図19(b)は、サブケース80の底面図である。図19(c)は、サブケース80の左側面図である。図19(d)は、サブケース80の右側面図である。
11 投光素子
12 投光封止部
16 受光素子
17 受光封止部
40 回路部
42 発光素子
90 回路封止部
92 動作表示部
Claims (7)
- 投光素子と、
前記投光素子を封止する投光封止部と、
受光素子と、
前記受光素子を封止する受光封止部と、
動作表示用の発光素子を含む回路部と、
前記回路部を封止し、前記発光素子に対向する位置に動作表示部を含む回路封止部と、
を備え、
前記投光封止部と前記受光封止部と前記回路封止部とは、導電性のリードフレームを介して接続されており、光拡散剤を同じ濃度だけ含有する同一の材質の樹脂によって形成されている、
フォトセンサ。 - 前記樹脂の光透過率は、20%以上、且つ、60%以下である、請求項1に記載のフォトセンサ。
- 前記リードフレームは、一体的に形成されている、
請求項1又は2に記載のフォトセンサ。
- 前記受光封止部における、前記受光素子の受光面を覆う、前記受光面に対して垂直方向の樹脂の厚さは、前記回路封止部における、前記発光素子の発光面を覆う、前記発光面に対して垂直な方向の樹脂の厚さより小さい、
請求項1から3のいずれかに記載のフォトセンサ。
- 前記受光封止部の前記受光面に対向する表面は曲面を含み、
前記受光封止部における、前記受光素子の受光面と前記曲面の頂点との間の樹脂の厚さは、前記回路封止部における、前記発光素子の発光面を覆う、前記発光面に対して垂直な方向の樹脂の厚さより小さい、
請求項4に記載のフォトセンサ。
- 前記投光封止部における、前記投光素子の投光面を覆う、前記投光面に対して垂直方向の樹脂の厚さは、前記回路封止部における、前記発光素子の発光面を覆う、前記発光面に対して垂直な方向の樹脂の厚さより小さい、請求項1から4のいずれかのフォトセンサ。
- 前記投光封止部の前記投光面に対向する表面は、曲面であり、
前記投光封止部における、前記投光素子の投光面と前記曲面の頂点との間の樹脂の厚さは、前記回路封止部における、前記発光素子の発光面を覆う、前記発光面に対して垂直方向の樹脂の厚さより小さい、
請求項6に記載のフォトセンサ。
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CN201510081813.2A CN104913795B (zh) | 2014-03-15 | 2015-02-15 | 光电传感器 |
EP15155639.6A EP2919281B1 (en) | 2014-03-15 | 2015-02-18 | Photosensor |
US14/625,994 US9312403B2 (en) | 2014-03-15 | 2015-02-19 | Photosensor having an emitter-encapsulating portion, receiver-encapsulating portion, and circuit-encapsulating portion connected to one another with a conductive leadframe |
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Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4114177A (en) * | 1975-05-01 | 1978-09-12 | Bell Telephone Laboratories, Incorporated | Optically coupled device with diffusely reflecting enclosure |
JPS5910762Y2 (ja) * | 1979-03-23 | 1984-04-04 | シャープ株式会社 | 光結合半導体装置 |
JPS60129161A (ja) * | 1983-12-13 | 1985-07-10 | Pioneer Electronic Corp | 接着剤塗布装置 |
JPS60129161U (ja) | 1984-02-07 | 1985-08-30 | 三洋電機株式会社 | 光結合器 |
JPH0638514B2 (ja) * | 1985-11-21 | 1994-05-18 | 日本電気株式会社 | フオトインタラプタ |
JPS62149177A (ja) * | 1985-12-23 | 1987-07-03 | Sharp Corp | コネクタ付光結合素子の製法 |
JPH0526777Y2 (ja) * | 1986-12-11 | 1993-07-07 | ||
JP2778054B2 (ja) * | 1988-10-27 | 1998-07-23 | 日本電気株式会社 | 樹脂封止型フォトインタラプタ |
JPH08119167A (ja) * | 1994-10-25 | 1996-05-14 | Sekisui Chem Co Ltd | 方向指示器 |
US5655042A (en) * | 1995-04-03 | 1997-08-05 | Motorola, Inc. | Molded slotted optical switch structure and method |
JPH1024298A (ja) * | 1996-07-11 | 1998-01-27 | Rooreru Kk | 濾過装置 |
US5753929A (en) * | 1996-08-28 | 1998-05-19 | Motorola, Inc. | Multi-directional optocoupler and method of manufacture |
JPH10242498A (ja) * | 1997-02-24 | 1998-09-11 | Omron Corp | ホトセンサ及びその製造方法 |
JPH11145505A (ja) * | 1997-11-11 | 1999-05-28 | Omron Corp | ホトセンサ及びその製造方法 |
JP4334041B2 (ja) * | 1998-11-26 | 2009-09-16 | 三洋電機株式会社 | 光半導体装置の製造方法 |
JP4193322B2 (ja) * | 2000-03-31 | 2008-12-10 | 住友電気工業株式会社 | レンズおよびそれを用いた赤外線センサー |
JP4072443B2 (ja) * | 2003-02-05 | 2008-04-09 | シャープ株式会社 | 受光センサ |
JP2006073282A (ja) * | 2004-08-31 | 2006-03-16 | Sunx Ltd | 検出センサ及びその製造方法 |
JP4348267B2 (ja) * | 2004-09-22 | 2009-10-21 | シャープ株式会社 | 光半導体装置、光通信装置および電子機器 |
TWI280673B (en) * | 2004-09-22 | 2007-05-01 | Sharp Kk | Optical semiconductor device, optical communication device, and electronic equipment |
JP2006147944A (ja) * | 2004-11-22 | 2006-06-08 | Citizen Electronics Co Ltd | フォトインタラプタ |
JP5100013B2 (ja) * | 2006-01-26 | 2012-12-19 | 新日本無線株式会社 | 半導体光センサ |
JP2008135683A (ja) * | 2006-10-24 | 2008-06-12 | Sharp Corp | 光結合装置およびその製造方法、並びに、光結合装置を用いた電子機器 |
JP5059537B2 (ja) * | 2007-10-03 | 2012-10-24 | シチズン電子株式会社 | フォトリフレクタの製造方法 |
JP2009130022A (ja) * | 2007-11-21 | 2009-06-11 | Toshiba Corp | インタラプタ |
CN101458366B (zh) * | 2007-12-13 | 2010-12-01 | 旭丽电子(广州)有限公司 | 光耦合器导线架料带 |
GB2485998A (en) * | 2010-11-30 | 2012-06-06 | St Microelectronics Res & Dev | A single-package optical proximity detector with an internal light baffle |
JP5908294B2 (ja) * | 2012-02-03 | 2016-04-26 | 株式会社東芝 | 半導体装置およびその製造方法 |
CN203274765U (zh) * | 2013-04-24 | 2013-11-06 | 欧姆龙株式会社 | 光电传感器 |
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