JP6277021B2 - Wafer processing apparatus and wafer processing method - Google Patents

Wafer processing apparatus and wafer processing method Download PDF

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JP6277021B2
JP6277021B2 JP2014049333A JP2014049333A JP6277021B2 JP 6277021 B2 JP6277021 B2 JP 6277021B2 JP 2014049333 A JP2014049333 A JP 2014049333A JP 2014049333 A JP2014049333 A JP 2014049333A JP 6277021 B2 JP6277021 B2 JP 6277021B2
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wafer
cleaning
holding
wafer processing
holding table
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JP2015173233A (en
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鈴木　稔
稔 鈴木
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Disco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)

Description

本発明は、ウエーハの表面を洗浄するウエーハ処理装置及びウエーハの処理方法に関する。   The present invention relates to a wafer processing apparatus and a wafer processing method for cleaning the surface of a wafer.

切削装置においては、フレームに保持されたウエーハを切削した後に、そのウエーハを貼着しているテープに紫外線を照射して粘性を低下させ、切削後のチップのピックアップを容易にし、作業性を高めるようにしている。生産性向上のために、切削装置に紫外線照射部を組み込んで紫外線照射領域を設け、ウエーハを切削している間の待ち時間を利用して、既に切削が終了したウエーハへの紫外線照射を行えるようにした切削装置が提案されている（例えば、特許文献１参照）。   In the cutting device, after cutting the wafer held by the frame, the tape attached to the wafer is irradiated with ultraviolet rays to reduce the viscosity, making it easier to pick up the chip after cutting and improving workability. I am doing so. In order to improve productivity, an ultraviolet irradiation unit is installed in the cutting device to provide an ultraviolet irradiation area, and the wafer can be irradiated with ultraviolet rays using the waiting time while the wafer is being cut. A cutting device has been proposed (see, for example, Patent Document 1).

特開平０７-４５５５６号公報Japanese Patent Application Laid-Open No. 07-45556

しかし、特許文献１に記載された切削装置は、紫外線照射部を組み込めるように、スペースを設ける必要があり、ウエーハが大口径になるほど装置面積が増大してしまうという問題がある。   However, the cutting device described in Patent Document 1 has a problem that it is necessary to provide a space so that an ultraviolet irradiation unit can be incorporated, and the area of the device increases as the wafer diameter increases.

本発明は、上記問題にかんがみなされたもので、その目的は、装置面積を増大させることなく効率的に紫外線を照射可能なウエーハ処理装置及びウエーハの処理方法を提供することである。   The present invention has been considered in view of the above problems, and an object thereof is to provide a wafer processing apparatus and a wafer processing method capable of efficiently irradiating ultraviolet rays without increasing the apparatus area.

上述した課題を解決し、目的を達成するために、本発明のウエーハ処理装置は、ウエーハの裏面側を保持して回転可能な保持テーブルと、該保持テーブルに保持されたウエーハの表面を洗浄し乾燥する洗浄乾燥手段とを備えたウエーハ処理装置であって、該保持テーブルは、ウエーハ裏面を吸引保持する吸引部が形成され裏面全面を保持する保持面を有し且つ紫外線を透過する材質で形成された保持部材と、該保持部材の保持面と反対側に配設された紫外線照射部とを備えていることを特徴とする。   In order to solve the above-described problems and achieve the object, the wafer processing apparatus of the present invention cleans the holding table that is rotatable while holding the back side of the wafer, and the surface of the wafer held by the holding table. A wafer processing apparatus having a cleaning / drying means for drying, wherein the holding table is formed of a material that has a holding surface for holding the entire back surface of the wafer and has a holding surface for holding the entire back surface, and transmits ultraviolet rays. And a UV irradiation unit disposed on the opposite side of the holding surface of the holding member.

また、本発明のウエーハの処理方法は、上記ウエーハ処理装置を使用してウエーハの処理を行うウエーハの処理方法であって、裏面側に紫外線硬化型の保護テープが貼着されたウエーハの裏面側を該保持テーブルの保持面に吸引保持する吸引保持ステップと、該吸引保持ステップを実施した後に、該保持テーブルを回転しつつ該洗浄乾燥手段によりウエーハ表面を洗浄乾燥する洗浄乾燥ステップと、該洗浄乾燥ステップを実施した後に、該紫外線照射部によりウエーハ裏面全面に紫外線を照射する紫外線照射ステップと、を備えることを特徴とする。   Further, the wafer processing method of the present invention is a wafer processing method for processing a wafer using the wafer processing apparatus, wherein the back surface side of the wafer having an ultraviolet curable protective tape attached to the back surface side. A suction holding step for sucking and holding the wafer on the holding surface of the holding table, a washing and drying step for washing and drying the wafer surface by the washing and drying means while rotating the holding table after performing the suction holding step, and the washing An ultraviolet irradiation step of irradiating the entire back surface of the wafer with ultraviolet rays after the drying step is performed.

本発明は、ウエーハ処理装置の保持テーブルの保持部材を紫外線が透過可能な材質で形成し、保持部材の下方に紫外線照射部を備えたので、紫外線照射部のために装置面積が増大することがなく省スペース化を図ることができる。また、保持部材の下方に紫外線照射部を備えたので、ウエーハの洗浄乾燥後に直ちに紫外線を照射することが可能である。したがって、装置面積を増大させることなく効率的に紫外線を照射可能となる。   In the present invention, the holding member of the holding table of the wafer processing apparatus is formed of a material that can transmit ultraviolet rays, and the ultraviolet irradiation unit is provided below the holding member, so that the apparatus area increases due to the ultraviolet irradiation unit. It is possible to save space. Further, since the ultraviolet irradiation unit is provided below the holding member, it is possible to irradiate ultraviolet rays immediately after the wafer is washed and dried. Therefore, it is possible to irradiate ultraviolet rays efficiently without increasing the device area.

図１は、実施形態に係るウエーハ処理装置としての洗浄装置を備えた切削装置の構成例の斜視図である。FIG. 1 is a perspective view of a configuration example of a cutting device provided with a cleaning device as a wafer processing device according to an embodiment. 図２は、実施形態に係るウエーハ処理装置としての洗浄装置の一部を断面で示す斜視図である。FIG. 2 is a perspective view showing a part of a cleaning apparatus as a wafer processing apparatus according to the embodiment in cross section. 図３は、実施形態に係るウエーハ処理装置としての洗浄装置を用いたウエーハの処理方法の洗浄乾燥ステップを示す断面図である。FIG. 3 is a cross-sectional view showing a cleaning / drying step of the wafer processing method using the cleaning apparatus as the wafer processing apparatus according to the embodiment. 図４は、実施形態に係るウエーハ処理装置としての洗浄装置を用いたウエーハの処理方法の紫外線照射ステップを示す断面図である。FIG. 4 is a cross-sectional view showing an ultraviolet irradiation step of a wafer processing method using a cleaning apparatus as a wafer processing apparatus according to the embodiment. 図５は、実施形態の変形例に係るウエーハ処理装置としての洗浄装置の一部を断面で示す斜視図である。FIG. 5 is a perspective view showing a part of a cleaning apparatus as a wafer processing apparatus according to a modification of the embodiment in cross section. 図６は、実施形態の変形例に係るウエーハ処理装置としての洗浄装置を用いたウエーハの処理方法の紫外線照射ステップを示す断面図である。FIG. 6 is a cross-sectional view showing an ultraviolet irradiation step of a wafer processing method using a cleaning apparatus as a wafer processing apparatus according to a modification of the embodiment.

本発明を実施するための形態（実施形態）につき、図面を参照しつつ詳細に説明する。以下の実施形態に記載した内容により本発明が限定されるものではない。また、以下に記載した構成要素には、当業者が容易に想定できるもの、実質的に同一のものが含まれる。さらに、以下に記載した構成は適宜組み合わせることが可能である。また、本発明の要旨を逸脱しない範囲で構成の種々の省略、置換又は変更を行うことができる。   DESCRIPTION OF EMBODIMENTS Embodiments (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. The constituent elements described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the structures described below can be combined as appropriate. Various omissions, substitutions, or changes in the configuration can be made without departing from the scope of the present invention.

〔実施形態〕
本発明の実施形態に係るウエーハ処理装置及びウエーハの処理方法を図面に基いて説明する。図１は、実施形態に係るウエーハ処理装置としての洗浄装置を備えた切削装置の構成例の斜視図である。図２は、実施形態に係るウエーハ処理装置としての洗浄装置の一部を断面で示す斜視図である。図３は、実施形態に係るウエーハ処理装置としての洗浄装置を用いたウエーハの処理方法の洗浄乾燥ステップを示す断面図である。図４は、実施形態に係るウエーハ処理装置としての洗浄装置を用いたウエーハの処理方法の紫外線照射ステップを示す断面図である。 Embodiment
A wafer processing apparatus and a wafer processing method according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view of a configuration example of a cutting device provided with a cleaning device as a wafer processing device according to an embodiment. FIG. 2 is a perspective view showing a part of a cleaning apparatus as a wafer processing apparatus according to the embodiment in cross section. FIG. 3 is a cross-sectional view showing a cleaning / drying step of the wafer processing method using the cleaning apparatus as the wafer processing apparatus according to the embodiment. FIG. 4 is a cross-sectional view showing an ultraviolet irradiation step of a wafer processing method using a cleaning apparatus as a wafer processing apparatus according to the embodiment.

実施形態にかかるウエーハ処理装置としての洗浄装置１は、ウエーハＷを切削、研削、研磨などの各種の加工を施す加工装置に設置されて、ウエーハＷの表面ＷＳを洗浄するものである。なお、図１に示す例では、洗浄装置１は、加工装置としてのウエーハＷに切削加工を施す切削装置１００に設置されている。   A cleaning apparatus 1 as a wafer processing apparatus according to the embodiment is installed in a processing apparatus that performs various processes such as cutting, grinding, and polishing of the wafer W, and cleans the surface WS of the wafer W. In the example shown in FIG. 1, the cleaning device 1 is installed in a cutting device 100 that performs a cutting process on a wafer W as a processing device.

なお、洗浄装置１により表面ＷＳが洗浄されるウエーハＷは、本実施形態では、シリコン、サファイア、ガリウムなどを母材とする円板状の半導体ウエーハや光デバイスウエーハであり、切削、研削、研磨などの各種の加工が施された後に洗浄装置１により洗浄される。ウエーハＷは、例えば、表面ＷＳに複数の分割予定ラインによって区画された各領域にデバイスが形成され、分割予定ラインに沿って切削されて、個々のデバイスに分割される。ウエーハＷは、図１に示すように、環状フレームＦに装着された保護テープＴに貼着されて、環状フレームＦに保護テープＴを介して装着される。保護テープＴは、紫外線Ｕ（図４に示す）を透過する材質で構成され、紫外線Ｕが照射されることで粘着層が粘性を低下する材質で構成されている。即ち、保護テープＴは、紫外線硬化型の保護テープである。   In this embodiment, the wafer W whose surface WS is cleaned by the cleaning apparatus 1 is a disk-shaped semiconductor wafer or optical device wafer using silicon, sapphire, gallium or the like as a base material, and is cut, ground, or polished. After the various processes such as the above are performed, the cleaning apparatus 1 performs cleaning. In the wafer W, for example, a device is formed in each region partitioned by a plurality of division lines on the surface WS, and the wafer W is cut along the division lines to be divided into individual devices. As shown in FIG. 1, the wafer W is attached to a protective tape T attached to the annular frame F and attached to the annular frame F via the protective tape T. The protective tape T is made of a material that transmits ultraviolet rays U (shown in FIG. 4), and the adhesive layer is made of a material that reduces the viscosity when irradiated with the ultraviolet rays U. That is, the protective tape T is an ultraviolet curable protective tape.

洗浄装置１を設置した切削装置１００は、図１に示すように、ウエーハＷを保持するチャックテーブル１１０と、チャックテーブル１１０に保持されたウエーハＷを切削するための切削ブレード１２１を備えた切削手段１２０と、チャックテーブル１１０をＸ軸方向に移動させるＸ軸移動手段（図示せず）と、切削手段１２０をＹ軸方向に移動させるＹ軸移動手段（図示せず）と、切削手段１２０をＺ軸方向に移動させるＺ軸移動手段（図示せず）と、チャックテーブル１１０をＺ軸と平行な軸心回りに回転させる回転駆動源（図示せず）等を備えている。切削装置１００は、Ｘ軸移動手段と、Ｙ軸移動手段と、Ｚ軸移動手段及び回転駆動源により、チャックテーブル１１０と切削手段１２０とをＸ軸方向、Ｙ軸方向、Ｚ軸方向及びＺ軸回りに相対的に移動させて、ウエーハＷに切削加工を施しデバイスに分割するものである。   As shown in FIG. 1, the cutting device 100 provided with the cleaning device 1 includes a chuck table 110 that holds a wafer W and a cutting means that includes a cutting blade 121 for cutting the wafer W held on the chuck table 110. 120, an X-axis moving means (not shown) for moving the chuck table 110 in the X-axis direction, a Y-axis moving means (not shown) for moving the cutting means 120 in the Y-axis direction, and the cutting means 120 as Z A Z-axis moving means (not shown) for moving in the axial direction, a rotation drive source (not shown) for rotating the chuck table 110 around an axis parallel to the Z-axis, and the like are provided. The cutting apparatus 100 includes an X-axis moving unit, a Y-axis moving unit, a Z-axis moving unit, and a rotational drive source to move the chuck table 110 and the cutting unit 120 in the X-axis direction, the Y-axis direction, the Z-axis direction, and the Z-axis. The wafer W is moved relative to each other, and the wafer W is cut and divided into devices.

また、切削装置１００は、切削前後のウエーハＷを複数収容するカセットエレベータ１３０と、カセットエレベータ１３０にウエーハＷを出し入れする搬出入手段１４０と、搬出入手段１４０とチャックテーブル１１０と洗浄装置１とに亘ってウエーハＷを搬送する搬送手段１６０と、を備えている。   The cutting apparatus 100 includes a cassette elevator 130 that stores a plurality of wafers W before and after cutting, a loading / unloading means 140 for loading / unloading the wafer W into / from the cassette elevator 130, a loading / unloading means 140, a chuck table 110, and the cleaning apparatus 1. And a transport unit 160 for transporting the wafer W.

切削装置１００は、搬出入手段１４０によりカセットエレベータ１３０内から切削加工前のウエーハＷを取り出し、取り出されたウエーハＷを搬送手段１６０によりチャックテーブル１１０に搬送する。そして、切削装置１００は、チャックテーブル１１０にウエーハＷを保持し、Ｘ軸移動手段と、Ｙ軸移動手段と、Ｚ軸移動手段及び回転駆動源により、チャックテーブル１１０と切削手段１２０とをＸ軸方向、Ｙ軸方向、Ｚ軸方向及びＺ軸回りに相対的に移動させて、ウエーハＷに切削加工を施してデバイスに分割する。切削装置１００は、切削加工後のウエーハＷを搬送手段１６０によりチャックテーブル１１０から洗浄装置１に搬送した後、洗浄装置１により洗浄する。そして、切削装置１００は、切削加工後のウエーハＷを搬送手段１６０により搬出入手段１４０に搬送し、搬出入手段１４０によりカセットエレベータ１３０内に収容する。   The cutting apparatus 100 takes out the wafer W before cutting from the cassette elevator 130 by the carry-in / out means 140 and conveys the taken wafer W to the chuck table 110 by the conveyance means 160. The cutting apparatus 100 holds the wafer W on the chuck table 110, and the chuck table 110 and the cutting means 120 are moved to the X axis by the X axis moving means, the Y axis moving means, the Z axis moving means, and the rotational drive source. The wafer W is cut relative to each other in the direction, the Y-axis direction, the Z-axis direction, and the Z-axis direction, and is divided into devices. In the cutting apparatus 100, the wafer W after the cutting process is transported from the chuck table 110 to the cleaning apparatus 1 by the transport unit 160 and then cleaned by the cleaning apparatus 1. Then, the cutting apparatus 100 transports the wafer W after cutting to the carry-in / out means 140 by the transport means 160 and accommodates it in the cassette elevator 130 by the carry-in / out means 140.

洗浄装置１は、ウエーハＷを回転させながら洗浄水Ｒ（図３に示す）を噴射することで、ウエーハＷの表面ＷＳを洗浄する、所謂、スピンナ洗浄装置である。また、本発明では、洗浄装置１は、切削装置１００などの加工装置に設置されることなく単独で構成されてもよい。   The cleaning device 1 is a so-called spinner cleaning device that cleans the surface WS of the wafer W by spraying cleaning water R (shown in FIG. 3) while rotating the wafer W. Moreover, in this invention, the washing | cleaning apparatus 1 may be comprised independently, without installing in processing apparatuses, such as the cutting apparatus 100. FIG.

洗浄装置１は、図１及び図２に示すように、洗浄チャンバー１０と、ウエーハＷを保持する保持テーブル２０と、洗浄乾燥手段３０とを備えている。洗浄チャンバー１０は、ウエーハＷの洗浄を外部と隔離した状態で行うためのものである。洗浄チャンバー１０は、本実施形態では、上方が開口した円筒状の形状であり、内部に、保持テーブル２０と、洗浄乾燥手段３０などが配設されている。洗浄チャンバー１０は、上方の開口を通して、搬送手段１６０によりウエーハＷが出し入れされる。また、洗浄チャンバー１０は、ウエーハＷを洗浄する際には、上方の開口が図示しない蓋等により塞がれる。   As shown in FIGS. 1 and 2, the cleaning apparatus 1 includes a cleaning chamber 10, a holding table 20 that holds the wafer W, and a cleaning and drying means 30. The cleaning chamber 10 is for performing cleaning of the wafer W while being isolated from the outside. In the present embodiment, the cleaning chamber 10 has a cylindrical shape with an upper opening, and a holding table 20 and a cleaning / drying unit 30 are disposed therein. In the cleaning chamber 10, the wafer W is taken in and out by the transfer means 160 through the upper opening. Further, when the wafer W is cleaned, the upper opening of the cleaning chamber 10 is closed by a lid or the like (not shown).

洗浄乾燥手段３０は、保持テーブル２０に保持されたウエーハＷの表面ＷＳを洗浄し乾燥するものである。洗浄乾燥手段３０は、図２に示すように、洗浄水噴射ノズル３１と、洗浄後のウエーハＷを乾燥させるための高圧エアーを噴射するエア噴射ノズル３２を備えている。   The cleaning / drying means 30 cleans and dries the surface WS of the wafer W held on the holding table 20. As shown in FIG. 2, the cleaning / drying unit 30 includes a cleaning water injection nozzle 31 and an air injection nozzle 32 that injects high-pressure air for drying the cleaned wafer W.

洗浄水噴射ノズル３１は、保持テーブル２０に保持されたウエーハＷの表面ＷＳに洗浄水Ｒを噴射するものである。洗浄水噴射ノズル３１は、導電性を有する金属で構成され、ウエーハＷを洗浄する際には、先端の噴射口３１ａが保持テーブル２０上のウエーハＷに向かって垂直に洗浄水Ｒを噴射する。洗浄水噴射ノズル３１は、ウエーハＷを洗浄する際には、先端の噴射口３１ａが保持テーブル２０の回転中心を通るように、図示しないモータにより揺動される。また、洗浄水噴射ノズル３１は、洗浄チャンバー１０内にウエーハＷを出し入れする際には、図示しないモータにより保持テーブル２０に保持されたウエーハＷの上方から退避される。   The cleaning water spray nozzle 31 sprays the cleaning water R onto the surface WS of the wafer W held on the holding table 20. The cleaning water spray nozzle 31 is made of a conductive metal, and when cleaning the wafer W, the spray port 31 a at the tip sprays the cleaning water R vertically toward the wafer W on the holding table 20. When cleaning the wafer W, the cleaning water spray nozzle 31 is swung by a motor (not shown) so that the spray port 31 a at the tip passes through the rotation center of the holding table 20. Further, the cleaning water injection nozzle 31 is retracted from above the wafer W held on the holding table 20 by a motor (not shown) when the wafer W is taken in and out of the cleaning chamber 10.

エア噴射ノズル３２は、加圧された空気や窒素などの気体を洗浄後のウエーハＷに噴射して、洗浄後のウエーハＷを乾燥させるものである。エア噴射ノズル３２は、ウエーハＷを乾燥する際には、先端の噴射口３２ａが保持テーブル２０上のウエーハＷに向かって高圧エアーを噴射する。また、実施形態では、エア噴射ノズル３２は、洗浄水噴射ノズル３１に取り付けられて、ウエーハＷを乾燥する際には、先端の噴射口３２ａが保持テーブル２０の回転中心を通るように、洗浄水噴射ノズル３１と一体に図示しないモータにより揺動される。なお、洗浄水噴射ノズル３１とエア噴射ノズル３２とは平行に配置され、エア噴射ノズル３２は洗浄水噴射ノズル３１よりも長く形成されている。   The air injection nozzle 32 injects gas such as pressurized air or nitrogen onto the cleaned wafer W, and dries the cleaned wafer W. The air injection nozzle 32 injects high-pressure air toward the wafer W on the holding table 20 when the wafer W is dried. In the embodiment, the air injection nozzle 32 is attached to the cleaning water injection nozzle 31, and when the wafer W is dried, the cleaning water is supplied so that the injection port 32 a at the tip passes through the rotation center of the holding table 20. It is swung by a motor (not shown) integrally with the injection nozzle 31. The cleaning water injection nozzle 31 and the air injection nozzle 32 are arranged in parallel, and the air injection nozzle 32 is formed longer than the cleaning water injection nozzle 31.

保持テーブル２０は、ウエーハＷの裏面ＷＲ側を保護テープＴを介して保持して、Ｚ軸方向と平行な軸心回りに回転可能なものである。保持テーブル２０は、図２、図３及び図４に示すように、保持部材２１と、テーブル本体２２と、紫外線照射部２３とを備えている。   The holding table 20 holds the back surface WR side of the wafer W via the protective tape T and can rotate around an axis parallel to the Z-axis direction. As shown in FIGS. 2, 3, and 4, the holding table 20 includes a holding member 21, a table body 22, and an ultraviolet irradiation unit 23.

保持部材２１は、ウエーハＷの裏面ＷＲ全面を保持する保持面２１ａを有している。保持面２１ａには、ウエーハＷ裏面ＷＲを吸引保持する吸引孔２４（吸引部に相当）が複数形成されている。吸引孔２４は、保持部材２１を貫通して、保持面２１ａに開口している。保持部材２１は、ガラスなどの紫外線Ｕを透過する材質で形成されている。テーブル本体２２は、保持部材２１の保持面２１ａと反対側の面との間に空間Ｋを設け、保持部材２１の外縁を囲んで、保持部材２１に取り付けられている。テーブル本体２２内の空間Ｋには、図示しない吸引手段に連結された吸引通路２５が開口している。紫外線照射部２３は、保持部材２１の保持面２１ａと反対側に配設されている。紫外線照射部２３は、空間Ｋの底面などに設置されかつ紫外線Ｕを照射可能なＬＥＤ２３ａを複数備えている。   The holding member 21 has a holding surface 21 a that holds the entire back surface WR of the wafer W. A plurality of suction holes 24 (corresponding to suction portions) for sucking and holding the wafer W rear surface WR are formed in the holding surface 21a. The suction hole 24 penetrates the holding member 21 and opens to the holding surface 21a. The holding member 21 is made of a material that transmits ultraviolet rays U such as glass. The table main body 22 is provided with a space K between the holding surface 21 a of the holding member 21 and the opposite surface, and is attached to the holding member 21 so as to surround the outer edge of the holding member 21. A suction passage 25 connected to suction means (not shown) is opened in the space K in the table body 22. The ultraviolet irradiation unit 23 is disposed on the side opposite to the holding surface 21 a of the holding member 21. The ultraviolet irradiation unit 23 includes a plurality of LEDs 23 a that are installed on the bottom surface of the space K and that can irradiate ultraviolet rays U.

保持テーブル２０は、環状フレームＦに保護テープＴを介して装着されたウエーハＷが保持面２１ａに載置され、吸引手段により負圧が作用されることによりウエーハＷの裏面ＷＲを保持面２１ａに吸引保持する。また、保持テーブル２０は、洗浄乾燥手段３０によるウエーハＷの表面ＷＳの洗浄、乾燥後に、紫外線照射部２３の複数のＬＥＤ２３ａから紫外線Ｕを保持部材２１を通して保護テープＴの粘着層に照射する。   In the holding table 20, the wafer W mounted on the annular frame F via the protective tape T is placed on the holding surface 21a, and negative pressure is applied by the suction means, whereby the back surface WR of the wafer W is placed on the holding surface 21a. Hold by suction. Further, the holding table 20 irradiates the adhesive layer of the protective tape T through the holding member 21 with the ultraviolet rays U from the plurality of LEDs 23 a of the ultraviolet irradiation unit 23 after the cleaning and drying of the surface WS of the wafer W by the cleaning and drying means 30.

また、保持テーブル２０には、洗浄装置１に取り付けられた図示しない電動モータの駆動軸が連結している。保持テーブル２０は、電動モータの回転駆動力により、Ｚ軸方向と平行な軸心回りに回転される。また、保持テーブル２０の周囲には、ウエーハＷの周囲の環状フレームＦを挟持するクランプ部２６が複数設けられている。さらに、保持テーブル２０は、図示しない昇降シリンダなどにより、ウエーハＷが洗浄チャンバー１０に出し入れされる際には上昇され、ウエーハＷの洗浄、乾燥中には下降される。   The holding table 20 is connected to a drive shaft of an electric motor (not shown) attached to the cleaning device 1. The holding table 20 is rotated around an axis parallel to the Z-axis direction by the rotational driving force of the electric motor. Further, around the holding table 20, a plurality of clamp portions 26 that sandwich the annular frame F around the wafer W are provided. Further, the holding table 20 is raised by a lift cylinder (not shown) when the wafer W is taken in and out of the cleaning chamber 10 and lowered during cleaning and drying of the wafer W.

また、洗浄装置１の洗浄チャンバー１０には、洗浄水Ｒなどを排出するための図示しない排出口が設けられている。洗浄装置１は、切削装置１００の図示しないマイクロプロセッサを主体として構成された制御手段により制御される。   Further, the cleaning chamber 10 of the cleaning apparatus 1 is provided with a discharge port (not shown) for discharging the cleaning water R and the like. The cleaning apparatus 1 is controlled by a control unit mainly composed of a microprocessor (not shown) of the cutting apparatus 100.

次に、実施形態に係る洗浄装置１を使用した洗浄方法、即ち、洗浄装置１を使用してウエーハＷの処理を行うウエーハの処理方法を説明する。ウエーハの処理方法としての洗浄方法は、吸引保持ステップと、洗浄乾燥ステップと、紫外線照射ステップとを備える。   Next, a cleaning method using the cleaning apparatus 1 according to the embodiment, that is, a wafer processing method for processing the wafer W using the cleaning apparatus 1 will be described. A cleaning method as a wafer processing method includes a suction holding step, a cleaning / drying step, and an ultraviolet irradiation step.

吸引保持ステップでは、前述した切削装置１００の搬送手段１６０により、洗浄装置１の保持テーブル２０に切削加工が施されかつ裏面ＷＲ側に保護テープＴが貼着されたウエーハＷが載置される。なお、この状態では、洗浄水噴射ノズル３１の噴射口３１ａ、エア噴射ノズル３２の噴出口３２ａは保持テーブル２０の上方から退避している。そして、制御手段が、昇降シリンダに保持テーブル２０を下降させるとともに、吸引手段を駆動して、ウエーハＷの裏面ＷＲ側を保護テープＴを介して保持テーブル２０の保持面２１ａに吸引保持する。さらに、クランプ部２６により環状フレームＦを挟持する。そして、蓋等により洗浄チャンバー１０の開口を塞いで、洗浄乾燥ステップに進む。   In the suction holding step, the wafer W on which the cutting process is performed on the holding table 20 of the cleaning device 1 and the protective tape T is attached to the back surface WR side is placed by the transport unit 160 of the cutting device 100 described above. In this state, the ejection port 31 a of the cleaning water ejection nozzle 31 and the ejection port 32 a of the air injection nozzle 32 are retracted from above the holding table 20. Then, the control means lowers the holding table 20 to the lifting cylinder and drives the suction means to suck and hold the back surface WR side of the wafer W on the holding surface 21a of the holding table 20 via the protective tape T. Further, the annular frame F is clamped by the clamp part 26. Then, the opening of the cleaning chamber 10 is closed with a lid or the like, and the process proceeds to the cleaning and drying step.

洗浄乾燥ステップでは、吸引保持ステップを実施した後に、制御手段が電動モータを駆動して、保持テーブル２０とウエーハＷを軸心回りに回転しつつ洗浄乾燥手段３０にウエーハＷ表面ＷＳを洗浄乾燥する。具体的には、洗浄乾燥ステップでは、図３に示すように、制御手段が保持テーブル２０に保持されたウエーハＷの表面ＷＳに洗浄水噴射ノズル３１の噴射口３１ａから洗浄水Ｒを噴射させ、図示しないモータにより洗浄水噴射ノズル３１とエア噴射ノズル３２とを揺動させる。   In the cleaning / drying step, after the suction holding step is performed, the control unit drives the electric motor to clean and dry the wafer W surface WS on the cleaning / drying unit 30 while rotating the holding table 20 and the wafer W about the axis. . Specifically, in the cleaning / drying step, as shown in FIG. 3, the control means causes the cleaning water R to be sprayed from the spray port 31 a of the cleaning water spray nozzle 31 onto the surface WS of the wafer W held on the holding table 20. The washing water injection nozzle 31 and the air injection nozzle 32 are swung by a motor (not shown).

そして、洗浄水Ｒの噴射を所定時間行った後、制御手段は、洗浄水噴射ノズル３１の噴射口３１ａからの洗浄水Ｒの噴射を停止させ、保持テーブル２０とウエーハＷを軸心回りに回転しつつ図示しないモータにより洗浄水噴射ノズル３１とエア噴射ノズル３２とを揺動させながら、エア噴射ノズル３２の噴射口３２ａから高圧エアーをウエーハＷの表面ＷＳに噴出させる。そして、高圧エアーの噴射を所定時間行った後、制御手段は、エア噴射ノズル３２の噴射口３２ａからの高圧エアーの噴射を停止させ、図示しないモータにより洗浄水噴射ノズル３１とエア噴射ノズル３２とをウエーハＷの上方から退避させ、保持テーブル２０の軸心回りの回転を停止させて、紫外線照射ステップに進む。   Then, after spraying the cleaning water R for a predetermined time, the control means stops the spraying of the cleaning water R from the spray port 31a of the cleaning water spray nozzle 31 and rotates the holding table 20 and the wafer W about the axis. However, high-pressure air is jetted from the jet port 32a of the air jet nozzle 32 onto the surface WS of the wafer W while the cleaning water jet nozzle 31 and the air jet nozzle 32 are swung by a motor (not shown). Then, after performing the high-pressure air injection for a predetermined time, the control means stops the high-pressure air injection from the injection port 32a of the air injection nozzle 32, and the cleaning water injection nozzle 31 and the air injection nozzle 32 are Is retracted from above the wafer W, the rotation of the holding table 20 around the axis is stopped, and the process proceeds to the ultraviolet irradiation step.

紫外線照射ステップでは、洗浄乾燥ステップを実施した後に、制御手段は、図４に示すように、紫外線照射部２３の複数のＬＥＤ２３ａによりウエーハＷ裏面ＷＲ全面に所定時間紫外線Ｕを照射する。なお、紫外線照射ステップでは、電動モータによる保持テーブル２０の回転を停止しているが、慣性などにより保持テーブル２０が軸心回りに回転していてもよく、保持テーブル２０が停止していてもよい。そして、制御手段は、保持テーブル２０の吸引保持とクランプ部２６の環状フレームＦの挟持を解除する。制御手段は、搬送手段１６０などにより保持テーブル２０上のウエーハＷをカセットエレベータ１３０に搬送する。なお、洗浄乾燥ステップにおいて用いられた洗浄水Ｒは、洗浄チャンバー１０に設けられた排出口などを通して洗浄装置１外に排出される。   In the ultraviolet irradiation step, after performing the cleaning / drying step, the control unit irradiates the entire surface of the wafer W back surface WR with ultraviolet rays U for a predetermined time by a plurality of LEDs 23a of the ultraviolet irradiation unit 23, as shown in FIG. In the ultraviolet irradiation step, the rotation of the holding table 20 by the electric motor is stopped, but the holding table 20 may be rotated around the axis due to inertia or the like, or the holding table 20 may be stopped. . Then, the control unit releases the suction holding of the holding table 20 and the clamping of the annular frame F of the clamp portion 26. The control means transports the wafer W on the holding table 20 to the cassette elevator 130 by the transport means 160 or the like. The cleaning water R used in the cleaning / drying step is discharged out of the cleaning apparatus 1 through a discharge port provided in the cleaning chamber 10.

以上のように、実施形態に係る洗浄装置１及び洗浄方法によれば、保持テーブル２０の保持部材２１を紫外線Ｕが透過可能な材質で構成し、保持部材２１の下方に紫外線照射部２３を設けている。このために、紫外線照射部２３を、洗浄装置１の保持テーブル２０の保持部材２１と重ねて設置するので、紫外線照射部２３を設置するために洗浄装置１や切削装置１００が大型化することを抑制できる。したがって、洗浄装置１や切削装置１００の設置にかかる装置面積を増大させることなく、効率的に紫外線Ｕの照射が可能となる。   As described above, according to the cleaning apparatus 1 and the cleaning method according to the embodiment, the holding member 21 of the holding table 20 is made of a material that can transmit ultraviolet U, and the ultraviolet irradiation unit 23 is provided below the holding member 21. ing. For this reason, since the ultraviolet irradiation unit 23 is installed so as to overlap the holding member 21 of the holding table 20 of the cleaning device 1, the size of the cleaning device 1 or the cutting device 100 is increased in order to install the ultraviolet irradiation unit 23. Can be suppressed. Therefore, it is possible to efficiently irradiate the ultraviolet rays U without increasing the device area for installing the cleaning device 1 and the cutting device 100.

さらに、実施形態に係る洗浄装置１及び洗浄方法によれば、紫外線照射部２３を保持テーブル２０の保持部材２１の下方に設けたので、洗浄乾燥ステップを実施した後に速やかに紫外線照射ステップを実施することができる。したがって、効率的に紫外線Ｕの照射が可能となる。また、本発明では、洗浄乾燥ステップ実施開始後、洗浄乾燥ステップを実施している最中に、紫外線照射部２３に紫外線ＵをウエーハＷ裏面ＷＲ全面に照射してもよい。この場合、より効率的に紫外線Ｕの照射が可能となる。このように、本発明の洗浄乾燥ステップを実施した後に紫外線照射ステップを実施するとは、洗浄乾燥ステップ実施開始後、洗浄乾燥ステップを実施している最中に紫外線照射ステップを実施することも含まれる。   Furthermore, according to the cleaning apparatus 1 and the cleaning method according to the embodiment, since the ultraviolet irradiation unit 23 is provided below the holding member 21 of the holding table 20, the ultraviolet irradiation step is quickly performed after the cleaning and drying step. be able to. Therefore, the ultraviolet ray U can be efficiently irradiated. In the present invention, after the start of the cleaning / drying step, while the cleaning / drying step is being performed, the ultraviolet irradiation unit 23 may be irradiated with the ultraviolet ray U on the entire surface of the back surface WR of the wafer W. In this case, it is possible to irradiate ultraviolet rays U more efficiently. As described above, performing the ultraviolet irradiation step after performing the cleaning / drying step of the present invention includes performing the ultraviolet irradiation step during the execution of the cleaning / drying step after the start of the cleaning / drying step. .

〔変形例〕
本発明の実施形態の変形例に係るウエーハ処理装置及びウエーハの処理方法を図面に基いて説明する。図５は、実施形態の変形例に係るウエーハ処理装置としての洗浄装置の一部を断面で示す斜視図である。図６は、実施形態の変形例に係るウエーハ処理装置としての洗浄装置を用いたウエーハの処理方法の紫外線照射ステップを示す断面図である。なお、図５及び図６において、前述した実施形態と同一部分には、同一符号を付して説明を省略する。 [Modification]
A wafer processing apparatus and a wafer processing method according to a modification of the embodiment of the present invention will be described with reference to the drawings. FIG. 5 is a perspective view showing a part of a cleaning apparatus as a wafer processing apparatus according to a modification of the embodiment in cross section. FIG. 6 is a cross-sectional view showing an ultraviolet irradiation step of a wafer processing method using a cleaning apparatus as a wafer processing apparatus according to a modification of the embodiment. 5 and 6, the same parts as those of the above-described embodiment are denoted by the same reference numerals and description thereof is omitted.

実施形態の変形例にかかるウエーハ処理装置としての洗浄装置１−１は、図５及び図６に示すように、保持テーブル２０の保持面２１ａに吸引部としての吸引溝２４−１が複数形成されている。吸引溝２４−１は、保持面２１ａから凹に形成され、保持面２１ａの中央から放射状に延在している。吸引溝２４−１は、保持面２１ａの中央から外周方向に直線状に延在している。また、テーブル本体２２に設けられた吸引通路２５は、吸引溝２４−１に連通している。   As shown in FIGS. 5 and 6, the cleaning apparatus 1-1 as the wafer processing apparatus according to the modification of the embodiment has a plurality of suction grooves 24-1 as suction sections formed on the holding surface 21 a of the holding table 20. ing. The suction groove 24-1 is formed concave from the holding surface 21a, and extends radially from the center of the holding surface 21a. The suction groove 24-1 extends linearly from the center of the holding surface 21a in the outer peripheral direction. The suction passage 25 provided in the table body 22 communicates with the suction groove 24-1.

実施形態の変形例にかかるウエーハ処理装置としての洗浄装置１−１は、実施形態と同様に、設置にかかる装置面積を増大させることなく、効率的に紫外線Ｕの照射が可能となる。   As in the embodiment, the cleaning apparatus 1-1 as the wafer processing apparatus according to the modification of the embodiment can efficiently irradiate the ultraviolet rays U without increasing the apparatus area for installation.

前述した実施形態では、加工装置として切削装置１００を示しているが、本発明では、これに限定されることなく、研磨装置、研削装置、レーザー加工装置などの種々の加工装置に適用してもよい。また、前述した実施形態では、ウエーハ処理装置として洗浄装置１を示しているが、本発明では、これに限定することなく、ウエーハＷの表面ＷＳに保護膜を塗布した後に保護膜を除去する保護膜形成兼洗浄装置などの種々のウエーハ処理装置に適用してもよい。   In the above-described embodiment, the cutting device 100 is shown as the processing device. However, the present invention is not limited to this, and may be applied to various processing devices such as a polishing device, a grinding device, and a laser processing device. Good. In the embodiment described above, the cleaning apparatus 1 is shown as the wafer processing apparatus. However, the present invention is not limited to this, and the protection for removing the protective film after applying the protective film to the surface WS of the wafer W is not limited thereto. You may apply to various wafer processing apparatuses, such as a film formation and washing apparatus.

なお、本発明は上記実施形態、変形例に限定されるものではない。即ち、本発明の骨子を逸脱しない範囲で種々変形して実施することができる。   In addition, this invention is not limited to the said embodiment and modification. That is, various modifications can be made without departing from the scope of the present invention.

１ 洗浄装置（ウエーハ処理装置）
２０ 保持テーブル
２１ 保持部材
２１ａ 保持面
２３ 紫外線照射部
２４ 吸引孔（吸引部）
２４−１ 吸引溝（吸引部）
３０ 洗浄乾燥手段
Ｔ 保護テープ
Ｕ 紫外線
Ｗ ウエーハ
ＷＳ 表面
ＷＲ 裏面 1 Cleaning equipment (wafer processing equipment)
20 holding table 21 holding member 21a holding surface 23 ultraviolet irradiation part 24 suction hole (suction part)
24-1 Suction groove (suction part)
30 Cleaning and drying means T Protective tape U Ultraviolet W Wafer WS Front WR Back

Claims (2)

ウエーハの裏面側を保持して回転可能な保持テーブルと、該保持テーブルに保持されたウエーハの表面を洗浄し乾燥する洗浄乾燥手段とを備えたウエーハ処理装置であって、
該保持テーブルは、ウエーハ裏面を吸引保持する吸引部が形成され裏面全面を保持する保持面を有し且つ紫外線を透過する材質で形成された保持部材と、該保持部材の保持面と反対側に配設された紫外線照射部とを備えているウエーハ処理装置。 A wafer processing apparatus comprising a holding table that is rotatable while holding the back side of a wafer, and a cleaning / drying means for cleaning and drying the surface of the wafer held on the holding table,
The holding table includes a holding member that is formed of a material that sucks and holds the back surface of the wafer, has a holding surface that holds the entire back surface, and transmits ultraviolet rays, and is opposite to the holding surface of the holding member. A wafer processing apparatus comprising an arranged ultraviolet irradiation unit. 請求項１記載のウエーハ処理装置を使用してウエーハの処理を行うウエーハの処理方法であって、
裏面側に紫外線硬化型の保護テープが貼着されたウエーハの裏面側を該保持テーブルの保持面に吸引保持する吸引保持ステップと、
該吸引保持ステップを実施した後に、該保持テーブルを回転しつつ該洗浄乾燥手段によりウエーハ表面を洗浄乾燥する洗浄乾燥ステップと、
該洗浄乾燥ステップを実施した後に、該紫外線照射部によりウエーハ裏面全面に紫外線を照射する紫外線照射ステップと、
を備えるウエーハの処理方法。 A wafer processing method for processing a wafer using the wafer processing apparatus according to claim 1,
A suction holding step for sucking and holding the back side of the wafer having a UV curable protective tape attached to the back side to the holding surface of the holding table;
A cleaning and drying step of cleaning and drying the wafer surface by the cleaning and drying means while rotating the holding table after performing the suction and holding step;
After performing the washing and drying step, an ultraviolet irradiation step of irradiating the entire back surface of the wafer with ultraviolet rays by the ultraviolet irradiation unit;
A wafer processing method comprising:
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