CN100442448C - Substrate processing apparatus, substrate processing method, and substrate holding apparatus - Google Patents
Substrate processing apparatus, substrate processing method, and substrate holding apparatus Download PDFInfo
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- CN100442448C CN100442448C CNB200480022684XA CN200480022684A CN100442448C CN 100442448 C CN100442448 C CN 100442448C CN B200480022684X A CNB200480022684X A CN B200480022684XA CN 200480022684 A CN200480022684 A CN 200480022684A CN 100442448 C CN100442448 C CN 100442448C
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- 239000000758 substrate Substances 0.000 title claims abstract description 1255
- 238000012545 processing Methods 0.000 title claims abstract description 208
- 238000003672 processing method Methods 0.000 title abstract description 12
- 239000012530 fluid Substances 0.000 claims abstract description 405
- 239000007788 liquid Substances 0.000 claims abstract description 318
- 238000004140 cleaning Methods 0.000 claims abstract description 150
- 230000002093 peripheral effect Effects 0.000 claims description 111
- 230000000717 retained effect Effects 0.000 claims description 74
- 239000004020 conductor Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 abstract description 173
- 239000000126 substance Substances 0.000 abstract description 65
- 238000000034 method Methods 0.000 abstract description 43
- 230000008569 process Effects 0.000 abstract description 38
- 238000001035 drying Methods 0.000 abstract description 35
- 230000007246 mechanism Effects 0.000 abstract description 21
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 391
- 235000012431 wafers Nutrition 0.000 description 174
- 238000005498 polishing Methods 0.000 description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 34
- 239000000243 solution Substances 0.000 description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 26
- 238000005530 etching Methods 0.000 description 23
- 238000009792 diffusion process Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 19
- 229910052757 nitrogen Inorganic materials 0.000 description 17
- 238000007747 plating Methods 0.000 description 15
- 230000003068 static effect Effects 0.000 description 13
- 239000011261 inert gas Substances 0.000 description 12
- 238000011068 loading method Methods 0.000 description 11
- 239000004372 Polyvinyl alcohol Substances 0.000 description 10
- 229920002451 polyvinyl alcohol Polymers 0.000 description 10
- 239000004094 surface-active agent Substances 0.000 description 9
- 230000003321 amplification Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 238000005086 pumping Methods 0.000 description 8
- 238000000746 purification Methods 0.000 description 8
- 238000005406 washing Methods 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000005661 hydrophobic surface Effects 0.000 description 7
- 238000012544 monitoring process Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 238000009434 installation Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000002153 concerted effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 230000002940 repellent Effects 0.000 description 4
- 239000005871 repellent Substances 0.000 description 4
- 230000010148 water-pollination Effects 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 3
- 239000003570 air Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000008168 Ficus benjamina Species 0.000 description 1
- 206010020852 Hypertonia Diseases 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- 244000007853 Sarothamnus scoparius Species 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000007791 dehumidification Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- CEYULKASIQJZGP-UHFFFAOYSA-L disodium;2-(carboxymethyl)-2-hydroxybutanedioate Chemical compound [Na+].[Na+].[O-]C(=O)CC(O)(C(=O)O)CC([O-])=O CEYULKASIQJZGP-UHFFFAOYSA-L 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- -1 part Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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Abstract
The present invention relates to a substrate processing apparatus and a substrate processing method for performing a chemical liquid process, a cleaning process, a drying process, or the like while rotating a substrate such as a semiconductor wafer or a liquid crystal substrate. The present invention also relates to a substrate holding apparatus for holding and rotating a substrate. The substrate processing apparatus (1) for processing a substrate (W) while supplying a fluid to the substrate (W) includes a substrate holder (11) for holding and rotating the substrate (W), and a holder suction unit (24) for sucking the fluid from the substrate holder (11). The substrate holding apparatus includes a plurality of rollers (20) which are brought into contact with an edge portion of a substrate (W) so as to hold and rotate the substrate (W), and at least one moving mechanism (303a) for moving the rollers (20).
Description
Technical field
The present invention relates to substrate processing device, be used in rotary substrate (for example semiconductor wafer or liquid crystal substrate), carrying out chemical liquid treatment, clean and dried or similar processing.
Background technology
Along with the semiconductor device integrated level is more and more higher, in semiconductor fabrication process, requires the high yield of semiconductor device, and require highly integrated.Particularly, in order to realize high yield, the surface of substrate (for example semiconductor wafer) needs highly cleaning, and therefore the requirement to cleaning has improved.In this case, in semiconductor fabrication process, come the cleaning substrate surface with various cleaning procedures.In recent years, in order to reduce the dielectric constant of dielectric film, often use low-k film (low dielectric film).Because the surface of low-k film presents hydrophobicity, can increase so clean the number of processes of substrate with hydrophobic surface.
In semiconductor fabrication process, along with the diameter change of semiconductor wafer is big, the single-wafer processing device is introduced in the increasing wet treatment.The single-wafer processing device that rotary-type processing unit is thought to use in wet treatment widely, and be applied to the cleaning device and the drying device of semiconductor wafer.
The following operation of above-mentioned rotary-type processing unit:, and provide chemical liquid to clean substrate to the substrate of rotation by substrate holder (for example rotary chuck) high speed rotating substrate.After this, provide cleaning fluid (as ultra-pure water) flush away chemical liquid, then with higher speed rotary substrate removing cleaning fluid, thereby dry substrate.
But in above-mentioned traditional processing unit, liquid (for example cleaning fluid) is retained near the substrate sections of substrate holder probably, so near the liquid that can not that exists the substrate holder is replaced by new liquid apace.This liquid also probably from the substrate holder diffusion, causes the pollution of substrate.
At the Rotary drying device that is used for by high speed rotating substrate dry substrate,, therefore produce watermark at substrate surface owing to high speed rotating spreads a large amount of moistures.In this Rotary drying device, although the very fast drying of the peripheral part of substrate is positioned at the liquid that substrate center partly locates on the arid region not and tends to adhere to arid region (being peripheral part).And the liquid shell that partly spreads from substrate perimeter is got back to container (Processing Room) wall surface, and then adheres to substrate surface, thereby causes watermark.And, because centrifugal force does not act on the core of substrate, so core can't intensive drying.Under the situation with substrate holder (for example rotary chuck) fixed substrate, the substrate sections of close substrate holder does not have intensive drying, therefore needs long processing time dry substrate.
On the other hand, also once attempted in by substrate holder high speed rotating substrate, providing gas to come dry substrate to substrate from gas supply unit.But, because substrate holder (for example rotary chuck) that can the high speed rotating substrate is arranged on below the substrate, so be difficult to the gas upper surface and the lower surface of dry substrate equivalently.Particularly, when gas is supplied to the lower surface of substrate, is difficult to dry substrate and on the substrate lower surface, does not produce watermark.As above, (for example cleaning fluid or rinsing liquid are so be difficult to dry substrate under the situation of high speed rotating substrate not because traditional Rotary drying device is by utilizing centrifugal force to remove liquid from substrate.
And, when low-k film is used as dielectric film, cause following problem: when implementing wet treatment (for example chemical liquid treatment or rinsing are handled) on the substrate surface that is comprising hydrophobic surface, can not use the whole surface of treat liquid (for example chemical liquid or rinsing liquid) covering substrate, therefore expose hydrophobic surface on the surface of substrate.In this case, if treatment substrate, a part of treat liquid adheres to hydrophobic surface with the form of drop, and this drop is mobile on hydrophobic surface, thereby produces watermark on the track of mobile drop.And when substrate high speed rotating during with dry substrate, the drop of treat liquid is dished out from substrate, hits on the wall of a container surface or on the substrate holder, is adhering to substrate surface then.This drop of treat liquid moves on substrate surface along with the substrate rotation, thereby produces watermark on the track of mobile drop.This watermark causes the output of product to reduce.
In traditional rotary-type processing unit, when partly clamping the some parts of substrate, carry out chemical liquid treatment with substrate holder.Therefore, be difficult to, thereby be retained on these parts, cause metallic pollution, cause product reliability to reduce as the metal of interconnection material with this part of chemical liquid treatment.
Traditional rotary-type processing unit also on the whole surface of substrate uniform treatment aspect existing problems because liquid only is fed to a part (for example core of substrate), and on the whole surface of substrate, spread by the rotation of substrate.
In recent years, the substrate holding apparatus with a plurality of pressure rollers (roller) of fixing and rotary substrate has been applied in the semiconductor-fabricating device, for example cleaning device or Etaching device.Figure 37 is shown schematically in the traditional substrate holding apparatus that uses in clean or the etch processes.As shown in figure 37, substrate holding apparatus comprises pressure roller 450a, 450b, 450c and the 450d (below be referred to as pressure roller 450) that is used for horizontal fixed semiconductor wafer W and rotation semiconductor wafer W.Each pressure roller 450 moves on the direction shown in the arrow in Figure 37 in parallel with each other, and rotates by the motor (not shown) as drive source.When semiconductor wafer W was sent to the semiconductor fixture, four pressure rollers 450 moved towards semiconductor wafer W, thereby so that closely contact with the marginal portion of semiconductor wafer W.Thereby semiconductor wafer W closely contacts with pressure roller 450 by maintenance and fixes.When fixing semiconductor wafer W, by motor rotation pressure roller 450, thereby rotation semiconductor wafer 450.
But in traditional substrate holding apparatus shown in Figure 37, pressure roller 450 is not the interval setting of marginal portion to equate along semiconductor wafer W, and moves in parallel with each other, thereby closely contacts with the marginal portion of semiconductor wafer W.Therefore, be not vanishing to the result of semiconductor wafer W applied pressure at the semiconductor wafer W core from pressure roller 450.Therefore, when fixing with pressure roller 450 and rotating semiconductor wafer W, the positional stability of semiconductor wafer W pivot degenerates.And when substrate rotated, the contact position between pressure roller 450 and the semiconductor wafer W marginal portion changed up and down, made whole semiconductor wafer W rise and fall and inclination.If the rotation accuracy variation of semiconductor wafer W has been provided to the not diffusion equably on the whole surface of semiconductor wafer W of the lip-deep treat liquid of semiconductor wafer W.As a result, can not on semiconductor wafer W, handle uniformly.And the semiconductor wafer W of rotation comes off from pressure roller 450 easily.Therefore, necessary increase to the semiconductor wafer W applied pressure, has so just been quickened the wearing and tearing of pressure roller 450 from pressure roller 450.
And if the rotation accuracy variation of semiconductor wafer W, etching solution (being treat liquid) not only enters the back side and the peripheral part of semiconductor wafer W, but also enters the zone that forms circuit (device), so etching solution has been handled part not to be processed.And, treat liquid (for example etching solution or cleaning fluid) accumulates in the retained part (recessed portion) of pressure roller 450, then in semiconductor wafer W rotation, with the tangent direction of semiconductor wafer W or pressure roller 450 on spread, thereby cause the pollution of atmosphere and semiconductor wafer W.
Summary of the invention
The present invention considers above-mentioned shortcoming and makes.Therefore first purpose of the present invention provides a kind of substrate processing device and processing method for substrate, can prevent that fluid (for example treat liquid) from spreading from substrate and substrate holder when cleaning and dry substrate, and can eliminate residual fluid on the substrate holder, displacement that can also accelerating fluid.
Second purpose of the present invention provides a kind of substrate processing device and processing method for substrate, can come the upper surface and the lower surface of dry substrate equivalently by gas is provided to substrate, can also prevent from substrate, to produce watermark, and can come dry substrate by slow-speed of revolution rotary substrate.
The 3rd purpose of the present invention provides a kind of substrate processing device and processing method for substrate, can improve the process uniformity on the substrate surface.
The 4th purpose of the present invention provides a kind of substrate holding apparatus, can improve the rotation accuracy of substrate, and can prevent the pressure roller wearing and tearing and prevent the treat liquid diffusion.
Target substrate of the present invention mainly is that diameter is not less than 200mm (for example 200mm, 300mm or 450mm) and thickness at 0.6 dish type silicon chip in the 0.8mm scope.
To achieve these goals, according to an aspect of the present invention, provide a kind of substrate processing device, be used at treatment substrate when substrate provides fluid, this substrate processing device comprises: be used for fixing the substrate holder with rotary substrate; With the fixture pump unit that is used for aspirating fluid from substrate holder.
According to the present invention, the fluid (for example cleaning fluid) that the has adhered to substrate holder device pump unit suction that is fixed, thereby can improve the fluid diadochy.In addition, can prevent that fluid from remaining on the substrate holder and preventing diffuse fluid.When substrate was implemented clean, dried or other technology, the part of fluid (for example cleaning fluid) moved to substrate holder from the peripheral part of substrate.According to the present invention, therefore the fluid that the has adhered to substrate holder device pump unit suction that is fixed, can reclaim the fluid that is sucked.
In preferred implementation of the present invention, this substrate processing device also comprises peripheral pump unit, is used for the peripheral part suction fluid from substrate.
According to the present invention, can remove and be recovered in the fluid on the peripheral part of substrate.
In preferred implementation of the present invention, substrate holder contacts with substrate, thereby by utilizing the frictional force between substrate holder and the substrate to fix and rotary substrate.
In preferred implementation of the present invention, substrate holder has the retained part that partly contacts with substrate edge, and the fixture pump unit is set near retained part, thereby suction has adhered to the fluid on the retained part.Thereby this retained part is partly to contact the part of pushing with fixed substrate with substrate edge.When by the substrate holder rotary substrate, fluid adheres to the retained part of substrate holder.According to the present invention, because the fixture pump unit is set near retained part, so can aspirate fluid from retained part with simple structure.
In preferred implementation of the present invention, the fixture pump unit is communicated with vacuum source.By this structure, can obtain sufficient suction force.
In preferred implementation of the present invention, this substrate processing device also comprises the fixture cleaning unit, is used for providing washing fluid to substrate holder.
According to the present invention, can more effectively remove the fluid (for example chemical liquid) that adheres to substrate holder.Therefore, can prevent that chemical liquid from remaining on the substrate holder, thereby prevent the next pollution of next substrate to be processed.
In preferred implementation of the present invention, the fixture pump unit is arranged on the place ahead of fixture cleaning unit on the substrate holder direction of rotation.By this structure, can under the situation of indiffusion fluid, clean substrate holder.
In preferred implementation of the present invention, this substrate processing device comprises that also at least one has the gas supply nozzle of gas supply opening, provides dry gas by this gas supply opening to substrate.
Thereby with substrate holder that substrate edge partly contacts rotary substrate the gas supply nozzle is separately positioned on above the substrate and below.Relative therewith, rotary chuck and vacuum chuck are set below substrate, thereby are difficult to below substrate, be provided with the gas supply nozzle.
And according to the present invention, device pump unit and/or peripheral pump unit aspirate effectively because the fluid on the substrate perimeter part is fixed, so can shorten drying time.In addition, even also can dry substrate under the substrate situation little with slow-speed of revolution rotation and centrifugal force.When substrate during with low speed rotation, further suppression fluid diffusion.Therefore, can prevent from substrate, to produce watermark effectively.In order to prevent to produce watermark, it is effective eliminating steam and oxygen.Comprise inert gas (for example nitrogen) if will offer the dry gas of substrate, can from substrate atmosphere on every side, remove steam and oxygen.And, by low humidity gas is provided to substrate, can prevent from around substrate, to produce moisture well.According to above-mentioned these structures, can be under the situation of low speed rotation dry efficiently substrate surface.
In preferred implementation of the present invention, dry gas is vertically to offer substrate surface.
If the dry gas that provides from the gas supply nozzle incides on the substrate when the core of dry substrate obliquely, the part before the core drying around the dry core.As a result, the fluid that remains on the substrate center part adheres to the arid region, thereby produces watermark.And if dry gas incides on the substrate obliquely, dry gas is run on the bulk zone, thereby reduces drying capacity.According to the present invention, owing on direction, provide dry gas to substrate perpendicular to substrate, thus can reduce the dry gas scale of construction that will use, and can carry out effective dry and handle.
In preferred implementation of the present invention, this substrate processing device also comprises: have the gas supply unit of a plurality of gas supply nozzles, be used for to the fixing substrate surface supply dry gas of substrate holder; Wherein the gas supply of gas supply nozzle begins regularly and gas is supplied stop timing and is provided with independently.
In order to prevent in the dried of substrate, to produce watermark, prevent that fluid from adhering to the arid region again is important.Therefore, preferably divide from central division to the peripheral part dry substrate step by step.According to the present invention, because the gas supply of gas supply nozzle begins regularly and gas supply stop timing is provided with independently, so the gas supply nozzle begins to supply dry gas in different timings, and at different timing stop supplies dry gas.Therefore, for each position of substrate, can supply dry gas to substrate with suitable amount.Partly go up remaining fluid in order to remove substrate perimeter apace, can partly begin to supply dry gas from substrate perimeter.
In preferred implementation of the present invention, this substrate processing device also comprises the gas supply unit with a plurality of gas supply nozzles, is used for to the fixing substrate surface supply dry gas of substrate holder; Wherein the flow velocity of the dry gas that provides from these gas supply nozzles is provided with independently.By this structure, can provide dry gas to substrate with the flow velocity that is suitable for the every part of substrate.
In preferred implementation of the present invention, when substrate provides dry gas, the gas supply nozzle moves between substrate center part and peripheral part.
For example, when the gas supply nozzle from substrate center part when peripheral part moves, can prevent that fluid from adhering to the arid region again.
In preferred implementation of the present invention, the translational speed of gas supply nozzle changes according to the relative position of gas supply nozzle and substrate.
When dry gas when the gas supply nozzle that moves offers substrate, the core of substrate is dry at short notice.But, along with the peripheral part of gas supply nozzle towards substrate moves, the zone that is dried is become big, therefore need longer time dry substrate.According to the present invention, the translational speed of gas supply nozzle changes along with its position, makes substrate by evenly and apace dry.
In preferred implementation of the present invention, before the gas supply opening arrives the substrate edge part, gas supply nozzle stop supplies dry gas.
If directly over substrate W peripheral part or under dry gas is provided, the fluid of gas and diffusion enters the opposite side of substrate, thereby causes polluting and watermark.And, if on the inner surface of container, having adhered to the fluid of inner surface of container so, the dry gas direct collision may spread.According to the present invention, just before its gas supply opening arrived the substrate edge part, the gas supply nozzle is the stop supplies dry gas immediately.Therefore can prevent the pollution and the diffusion of fluid, and from its core to the marginal portion dry substrate.The optimum seeking site of stop supplies dry gas is positioned at the distance of substrate edge part along radial direction inside 2 to 10mm.Behind the stop supplies dry gas, the gas supply nozzle preferably is moved in level or vertical direction and leaves substrate.
In preferred implementation of the present invention, will control from the dry gas pressure of gas supply nozzle supply by changing from the flow velocity of gas supply nozzle supply dry gas.
Under the constant situation in the aperture of gas supply opening,, can easily control the flow velocity of dry gas by changing gas supply pressure (i.e. the pressure of the dry gas by the supply of gas supply opening).If be provided for the pressure sensor of measurement gas supply pressure, be converted to flow velocity by the gas supply pressure that will measure, can monitor the flow velocity of dry gas.Solenoid electric valve can be provided, make the flow velocity that in dried, changes dry gas according to the relative position of gas supply nozzle and substrate.And, the flow velocity of dry gas of supply can be changed according to type of substrate.
In preferred implementation of the present invention, this fluid is a liquid, and when this liquid offered substrate, the fixture pump unit is pumping liquid not, thereby forms the film of this liquid on substrate surface.
In preferred implementation of the present invention, the fixture pump unit has the current-carrying part of being made by electric conducting material, and this current-carrying part ground connection.
In preferred implementation of the present invention, peripheral pump unit has the current-carrying part of being made by electric conducting material, and this current-carrying part ground connection.
In general, when by fixture pump unit and peripheral pump unit pumping liquid, liquid and air are mixed with each other, and rub between them.Therefore, produce static probably owing to rub, and substrate possibility thereby charged.Charged substrate has adverse effect to the circuit that forms on the substrate surface, causes the output of product to reduce.According to the present invention, because fixture pump unit and peripheral pump unit current-carrying part ground connection separately, thereby prevent substrate because static and charged.
According to a further aspect of the invention, provide a kind of substrate processing device, comprising: be used for fixing substrate holder with rotary substrate; Be separately positioned on the first gas supply nozzle and the second gas supply nozzle of substrate above and below, be used for providing gas to substrate; Be separately positioned on the first liquid supply nozzle and the second liquid supply nozzle of substrate above and below, be used for to the substrate supply fluid; Be used for from substrate center part to first travel mechanism that peripheral part moves the first gas supply nozzle and the first liquid supply nozzle; Be used for moving to peripheral part second travel mechanism of the second gas supply nozzle and the second liquid supply nozzle from the core of substrate; Wherein the first liquid supply nozzle is arranged on substrate directly upwards outside the first gas supply nozzle, and the second liquid supply nozzle is arranged on substrate directly upwards outside the second gas supply nozzle.
In general, when the gas supply nozzle to substrate supply dry gas the time from the substrate center part when peripheral part moves, the liquid film that forms on substrate surface is removed, and therefore from the core of substrate to the peripheral part dry substrate.Yet if having big difference in the water repellent region and the wettability between the hydrophilic region of substrate surface, water repellent region is dried quickly than the hydrophilic region in the zone except that the substrate center part.Therefore, drop remains on the hydrophilic region, and these drops are owing to the dry gas from the supply of gas supply nozzle spreads, thereby produces watermark.According to the present invention, liquid offers substrate, thereby forms liquid film on substrate surface, and therefore when dry gas sprayed to substrate, substrate surface was protected by liquid film.Therefore, even under the situation of the substrate that has water repellent region and hydrophilic region on dry its surface, whole surface that also can dry substrate, its drying mode makes dry water repellent region and hydrophilic region simultaneously, thereby can further reduce watermark.
In preferred implementation of the present invention, substrate processing device also comprises the fixture pump unit that is used to aspirate the liquid that has adhered to substrate holder; Be used for from the peripheral pump unit of substrate perimeter part pumping liquid.
In preferred implementation of the present invention, substrate holder has the pressure roller that partly contacts with substrate edge, and this pressure roller is keeping and spool rotating around himself when substrate contact.
In preferred implementation of the present invention, the second gas supply nozzle that is arranged on the first gas supply nozzle of substrate top and is arranged on the substrate below arrives the peripheral part of substrate simultaneously.In some cases, the upper surface of substrate has different wettabilitys with lower surface.In this case, if any one in upper surface and the lower surface is drier sooner than another, drop just adheres on the arid region possibly, thereby produces watermark.Therefore, must finish the upper surface and the lower surface of dry substrate simultaneously.According to the present invention, upper surface side gas supply nozzle (i.e. the first gas supply nozzle) moves with different speed with lower face side gas supply nozzle (i.e. the second gas supply nozzle), makes these two gas supply nozzles arrive the peripheral part of substrate simultaneously.By this structure, even the upper surface of substrate has different wettabilitys with lower surface, also can dry upper surface of while and lower surface.Therefore, can prevent from substrate, to produce watermark effectively.
In preferred implementation of the present invention; the first gas supply nozzle and the first liquid supply nozzle move; so that move along arching trajectory that partly extends from substrate center or linear track; and second gas supply nozzle and the second liquid supply nozzle be moved so that move along arching trajectory that partly extends from substrate center or linear track.
In preferred implementation of the present invention, the fixture pump unit has the current-carrying part of being made by electric conducting material, and current-carrying part ground connection.
In preferred implementation of the present invention, peripheral pump unit has the current-carrying part of being made by electric conducting material, and current-carrying part ground connection.
According to another aspect of the invention, provide a kind of burnishing device, comprising: the polishing unit that is used for polishing substrate; And substrate processing device.
According to another aspect of the invention, provide a kind of plater, comprising: the plating unit that is used for the plating substrate; And substrate processing device.
According to another aspect of the invention, provide a kind of processing method for substrate, comprising: by the substrate holder rotary substrate; Substrate accommodating fluid to rotation; With the fluid that has moved on to substrate holder by the fixture pump unit suction of close substrate holder setting from substrate.
In preferred implementation of the present invention, processing method for substrate also comprises by the peripheral pump unit that partly is provided with near the substrate perimeter peripheral part suction fluid from substrate.
In preferred implementation of the present invention, substrate holder partly contacts with substrate edge, thus fixing and rotary substrate.
According to another aspect of the invention, provide a kind of processing method for substrate, comprising: substrate holder is partly contacted with substrate edge, thus fixing and rotary substrate; To substrate accommodating fluid by the substrate holder rotation; Supply dry gas from the gas supply nozzle to substrate; In substrate supply dry gas from the substrate center part to peripheral part mobile gas supply nozzle, thereby on-chip fluid is partly moved to substrate perimeter; With the fluid of partly having shifted to substrate holder by the fixture pump unit suction of close substrate holder setting from substrate perimeter.
In preferred implementation of the present invention, processing method for substrate also comprises: provide washing fluid from the fixture cleaning unit to substrate holder, thereby handle the fluid that has moved on to substrate holder; With the fluid of having handled by washing fluid by the suction of fixture pump unit; Wherein the fixture pump unit is arranged on the place ahead of fixture cleaning unit on the direction of rotation of substrate holder.
In preferred implementation of the present invention, this fluid is a liquid, and when this liquid offered substrate, the fixture pump unit is pumping liquid not, thereby forms the film of this liquid on substrate surface.
According to another aspect of the invention, provide a kind of processing method for substrate, comprising: by the substrate holder rotary substrate; From the first liquid supply nozzle that is separately positioned on the substrate above and below and the second liquid supply nozzle at least one to being positioned at substrate center part footpath part supply fluid to the outside; From the first gas supply nozzle that is separately positioned on the substrate above and below and the second gas supply nozzle to substrate center part supply gas; Move the first liquid supply nozzle and the first gas supply nozzle from the substrate center part to peripheral part, thus the upper surface of dry substrate; And move the second liquid supply nozzle and the second gas supply nozzle to peripheral part, thereby the lower surface of dry substrate from the substrate center part.
In preferred implementation of the present invention, at the first and second liquid supply nozzles and the first and second gas supply nozzles when substrate center is partly shifted to peripheral part, the liquid that the has adhered to substrate holder device pump unit suction that is fixed, and the liquid on the substrate perimeter part is aspirated by peripheral pump unit.
According to another aspect of the invention, provide a kind of substrate processing device, comprising: be used for fixing substrate holder with rotary substrate; Be used at least one fluid supply opening to the substrate accommodating fluid of rotation; With at least one the fluid pump orifice that is used to aspirate on-chip fluid; Wherein fluid supply opening and fluid pump orifice are near the substrate setting.
In preferred implementation of the present invention, fluid supply opening and fluid pump orifice upwards move back and forth in the footpath of substrate.
In preferred implementation of the present invention, a plurality of fluid supply openings and a plurality of fluid pump orifice are arranged alternately.
In preferred implementation of the present invention, a plurality of fluid supply openings or a plurality of fluid pump orifice both or one of them linear setting.
In preferred implementation of the present invention, a plurality of fluid supply openings separate identical distance with substrate surface.
In preferred implementation of the present invention, a plurality of fluid pump orifices separate identical distance with substrate surface.
In preferred implementation of the present invention, substrate holder contacts with substrate, thereby utilizes the frictional force between substrate holder and the substrate to fix and rotary substrate.
In preferred implementation of the present invention, substrate processing device also comprises the fixture pump unit that is used to aspirate the fluid that has adhered on the substrate holder.
In preferred implementation of the present invention, substrate processing device also comprises the fixture cleaning unit that is used for to substrate holder supply washing fluid.
In preferred implementation of the present invention, substrate processing device also comprises the substrate processing unit with fluid supply opening and fluid pump orifice; Wherein this substrate processing unit has first operation part that fluid supply opening and fluid pump orifice wherein are set.
In preferred implementation of the present invention, this substrate processing unit has second operation part that fluid supply opening and fluid pump orifice wherein are set.
In preferred implementation of the present invention, this substrate processing unit can be operated, thereby switches between first operation part and second operation part, makes win one of operation part and second operation part in the face of substrate.
In preferred implementation of the present invention, be adjusted and make flow velocity improve gradually to perimeter sides from the flow rate of fluid of a plurality of fluid supply opening supply respectively from the central side of substrate.
In preferred implementation of the present invention, the period ratio substrate swing circle that fluid supply opening and fluid pump orifice move back and forth is longer.
In preferred implementation of the present invention, this substrate processing device also comprises at least one the gas supply nozzle with gas supply opening, and inert gas or low humidity gas are supplied to substrate by this gas supply opening.
In preferred implementation of the present invention, this substrate processing device also comprises the returnable that is used for utilizing again the fluid that has aspirated and reclaimed by the fluid pump orifice.
According to another aspect of the invention, provide a kind of processing method for substrate, comprising: rotary substrate; From the substrate accommodating fluid of at least one fluid supply opening to rotation; With aspirate on-chip fluid by at least one fluid pump orifice; Wherein fluid supply opening and fluid pump orifice are set near substrate.
According to another aspect of the invention, provide a kind of substrate holding apparatus, comprising: thus a plurality of pressure rollers fixing and rotary substrate partly contacted with substrate edge; With at least one travel mechanism that is used for mobile pressure roller; Wherein these pressure rollers upwards move in the footpath of substrate.
In preferred implementation of the present invention, these pressure rollers are provided with the interval that equates on the circumferencial direction of substrate.
According to the present invention, can be on the direction of substrate center part from pressure roller to the power that substrate applies.Therefore, can improve the positional stability of substrate pivot, and improve the rotation accuracy of substrate.In addition, can prevent that substrate breaks away from pressure roller in rotary course.
In preferred implementation of the present invention, when rotary substrate, at least one pressure roller is with the center of the marginal portion pressed against substrates of substrate.
According to the present invention, can reduce the wearing and tearing of pressure roller.Preferred all pressure that reduce pressure roller, and the power that imposes on substrate by pressure roller is equated.Also preferred pressure roller is provided with the interval that equates on the circumferencial direction of substrate, make by pressure roller impose on substrate power to make a concerted effort be zero.By this structure, can improve the rotation accuracy, thereby can prevent that substrate breaks away from pressure roller in rotary course.
In preferred implementation of the present invention, each of the circumferential surface of these pressure rollers all has groove shape retained part, and this retained part contacts with the marginal portion of substrate, and the width of retained part is not more than the twice of substrate thickness.
According to the present invention, the position that retained part and substrate keep in touch can be stable, so substrate can flatly fix and rotate, and does not have fluctuation and tilt.
In preferred implementation of the present invention, near two sweeps of top and bottom that retained part has the flat that is positioned at the retained part center and is positioned at flat, the width of this flat is not more than half of substrate thickness.
According to the present invention, two sweeps can prevent the center of the position deviation retained part of substrate.Therefore, pressure roller and can accurately recover by the relative position between the fixing substrate of pressure roller.Sweep can reduce the interval between substrate and each retained part.Therefore, the amount of the treat liquid that in this interval, keeps can be reduced, thereby the diffusion of treat liquid can be suppressed.
In preferred implementation of the present invention, the distance between the adjacent contact point that two pressure rollers keep with substrate contacts is less than the diameter of substrate.
According to the present invention,,, therefore can improve the uniformity and the stability of processing on substrate surface so treat liquid can be provided equably owing to can improve the rotation accuracy of substrate.In addition, owing to can reduce the power that pressure roller imposes on substrate, can alleviate the pressure roller wearing and tearing.And, owing to can reduce the amount of DIFFUSION TREATMENT liquid, so can prevent that atmosphere and substrate are contaminated.
The accompanying drawing summary
Fig. 1 is the plane graph that shows according to the substrate processing device of first embodiment of the invention;
Fig. 2 A is the enlarged drawing of display substrate fixture to 2D, Fig. 2 A display plane figure, Fig. 2 B show cross section plane figure, the cross-sectional view of the improvement example of substrate holder shown in Fig. 2 C displayed map 2B, the plane graph of the improvement example of substrate holder shown in Fig. 2 D displayed map 2A;
Fig. 3 A and 3B are the schematic diagrames of the effect of explanation fixture suction nozzle, and Fig. 3 A illustrates the not situation of pumping liquid, and Fig. 3 B illustrates the be fixed situation of device suction nozzle suction of liquid;
Fig. 4 shows that wherein fixture suction nozzle and inclined-plane suction nozzle are connected to the schematic diagram of the mode of vacuum source;
Fig. 5 is the end view of layout that shows the gas supply nozzle of substrate processing device shown in Figure 1;
Fig. 6 A is the schematic diagram that shows the layout of a plurality of gas supply nozzles;
Fig. 6 B and 6C are the schematic diagrames of the work timing of explanation gas supply nozzle;
Fig. 7 A is the translational speed and gas supply (opening-close) sequential chart regularly of explanation gas supply nozzle;
Fig. 7 B is the gas supply pressure and gas supply (opening-close) sequential chart regularly of explanation gas supply nozzle;
Fig. 8 A is the schematic diagram of explanation dry gas stream to 8C, Fig. 8 A illustrates the situation that the gas supply nozzle is arranged on the substrate edge part, Fig. 8 B illustrates the gas supply nozzle and is arranged on situation within the substrate edge part, and Fig. 8 C illustrates the gas supply nozzle and is arranged on situation outside the substrate edge part;
Fig. 9 is the plane graph that shows according to the substrate processing device of second embodiment of the invention;
Figure 10 is the end view that shows substrate processing device shown in Figure 9;
Figure 11 is the schematic plan view that shows in conjunction with the substrate handling system of Fig. 1 or substrate processing device shown in Figure 9;
Figure 12 is the schematic perspective view that shows according to the substrate processing device of third embodiment of the invention;
Figure 13 is the schematic perspective view that shows according to the substrate processing device of fourth embodiment of the invention;
Figure 14 A is the schematic diagram of position relation between explanation gas supply nozzle shown in Figure 13 and the liquid supply nozzle to 14D;
Figure 15 A is that demonstration is amplified cross-sectional view according to the part of the improvement example of the substrate processing device of fourth embodiment of the invention;
Figure 15 B is the schematic diagram of watching from the line XV-XV shown in Figure 15 A;
Figure 16 is the schematic plan view that shows in conjunction with the burnishing device (CMP device) of substrate processing device shown in Figure 12;
Figure 17 is the schematic plan view that shows in conjunction with the electroless device of substrate processing device shown in Figure 12;
Figure 18 is the plane graph that shows according to the substrate processing device of fifth embodiment of the invention;
Figure 19 is the end view that shows substrate processing device major part shown in Figure 180;
Figure 20 A is the enlarged drawing that shows washer jet shown in Figure 19;
Figure 20 B is the cross-sectional view that shows the fluid pump orifice;
Figure 20 C is the cross-sectional view that shows the fluid supply opening;
Figure 21 is the schematic diagram that the explanation washer jet moves back and forth;
Figure 22 A is explanation to substrate accommodating fluid (liquid) with from the schematic diagram of the mode of substrate suction fluid (liquid);
Figure 22 B is the schematic diagram of explanation in the mode of vortical supply fluid;
Figure 22 C illustrates the schematic diagram of the mode of supply fluid astatically;
Figure 22 D is the schematic diagram that shows fluid supply opening and the track of fluid pump orifice in moving back and forth;
Figure 23 is the plane graph that shows according to the substrate processing device primary structure of sixth embodiment of the invention;
Figure 24 is the cross-sectional view that shows substrate processing device shown in Figure 23;
Figure 25 is the structured flowchart that shows the system configuration of substrate processing device shown in Figure 23;
Figure 26 is the schematic plan view that shows in conjunction with the substrate handling system of Figure 18 or substrate processing device shown in Figure 23;
Figure 27 is the schematic plan view that shows according to the substrate holding apparatus of seventh embodiment of the invention;
Figure 28 is the cross-sectional view of the line XXVIII-XXVIII intercepting in Figure 27;
Figure 29 is the amplification cross-sectional view that shows the major part of pressure roller shown in Figure 28;
Figure 30 shows the end view of combination according to the cleaning device of the substrate holding apparatus of seventh embodiment of the invention;
Figure 31 A is the enlarged drawing that shows washer jet shown in Figure 30;
Figure 31 B is the cross-sectional view along the line XXXIb-XXXIb intercepting of Figure 31 A;
Figure 31 C is the cross-sectional view along the line XXXIc-XXXIc intercepting of Figure 31 A;
Figure 32 A shows the plane graph of combination according to another example of the cleaning device of the substrate holding apparatus of seventh embodiment of the invention;
Figure 32 B is the cross-sectional view of the cleaning device shown in Figure 32 A;
Figure 33 A is the amplification view of pressure roller shown in Figure 32 A;
Figure 33 B is the cross-sectional view of pressure roller shown in Figure 32 A;
Figure 34 schematically shows the amplification cross-sectional view of combination according to the major part of the back etched device of the substrate holding apparatus of seventh embodiment of the invention;
Figure 35 A is the schematic plan view that shows according to the substrate holding apparatus of eighth embodiment of the invention;
Figure 35 B is the schematic diagram of demonstration along the partial cross-section of the line XXXV-XXXV intercepting of Figure 35 A;
Figure 36 is the amplification cross-sectional view of demonstration according to the major part of the pressure roller of the substrate holding apparatus of ninth embodiment of the invention; With
Figure 37 is the schematic plan view that shows traditional substrate holding apparatus.
Realize best mode of the present invention
Embodiments of the invention are described below with reference to the accompanying drawings.
Fig. 1 is the plane graph that schematically shows according to the substrate processing device of first embodiment of the invention.Substrate processing device 1 comprises container 10 and the substrate holder 11 (11a, 11b, 11c and 11d) that is arranged in the container 10.Substrate W (for example semiconductor wafer) is contained in the container 10, and fixes and rotate by substrate holder 11a, 11b, 11c and 11d.Each substrate holder 11a, 11b, 11c and 11d have fixture suction nozzle (being the fixture pump unit) 24 (24a, 24b, 24c and 24d) and fixture washer jet (being the fixture cleaning unit) 26 (26a, 26b, 26c and 26d), and they all are provided with near substrate holder 11.Fixture suction nozzle 24a, 24b, 24c and 24d and fixture washer jet 26a, 26b, 26c and 26d are supported by strutting piece 28a, 28b, 28c and 28d respectively.Interval between corresponding fixture suction nozzle 24 and the corresponding substrate holder 11 can be regulated by adjuster 24 ' respectively, and the interval between corresponding fixture washer jet 26 and the corresponding substrate holder 11 can be regulated by adjuster 26 ' respectively.Washer jet (being substrate processing unit) 12 and 15 is separately positioned on upper surface side and the lower face side of substrate W.Washer jet 12 and 15 each have at least one fluid supply opening and at least one fluid pump orifice.These washer jets 12 and 15 can upwards move in the footpath of substrate W, shown in the two point dotted line (although the two point dotted line of expression washer jet 15 is not shown in the accompanying drawings).
Fig. 2 A and 2B are the schematic diagrames of the structure of display substrate fixture.The substrate holder (rotation fixture) 11 that is used for fixing substrate W comprises several pressure rollers 20 respectively, and each pressure roller 20 has the retained part 21 that forms on its circumferential surface.Pressure roller 20 is contacting with the marginal portion of substrate W under the predetermined pressure effect of substrate W approximate centre.All substrate holder 11 by at least one rotating mechanism for example the motor (not shown) and on identical direction with predetermined rotary speed rotation.Substrate holder 11 applies revolving force owing to the frictional force between substrate holder 11 and the substrate W marginal portion to substrate W in fixed substrate W.At least one substrate holder 11 can be rotated by rotating mechanism.Fixture suction nozzle 24 is provided with near the retained part 21 of pressure roller 20 respectively, and each fixture suction nozzle 24 has the pump orifice 23 that is used to aspirate fluid (for example treat liquid).Pump orifice 23 is provided with near retained part 21 with the distance that for example is not more than 5mm, thereby suction has adhered to the fluid on the retained part 21.Equally, fixture washer jet 26 is provided with near the retained part 21 of pressure roller 20 respectively, and each fixture washer jet 26 has the supply opening 25 that is used for to retained part 21 supply washing fluids (for example cleaning fluid).Pressure roller 20 is made by having chemical-resistant fluororesin PVDF (Kynoar).
Under the situation of using the rotary chuck of clamping substrate regularly, the fluid that is present in the pawl inboard of rotary chuck is not easy by new fluid displacement.Relative therewith, in the present embodiment, pressure roller 20 by corresponding substrate holder 11a, 11b, 11c and 11d fixes and rotary substrate W, and fixture suction nozzle 24a, 24b, 24c and 24d close substrate holder 11a, 11b, 11c and 11d setting, thereby the fluid on suction substrate holder 11a, 11b, 11c and the 11d.Therefore, can quicken near the displacement of the fluid of substrate holder 11a, 11b, 11c and 11d, and prevent that liquid residue is on substrate W and substrate holder 11a, 11b, 11c and 11d.
The retained part 21 of substrate holder 11 contacts with the marginal portion of substrate W under predetermined pressing force, thereby pushes substrate W towards substrate W inboard.Preferred retained part 21 has recessed shape, thereby makes substrate W can not break away from retained part 21 when fixing and rotation.Further preferably, retained part 21 from directly over see to have complete circle.Interval between fixture suction nozzle 24 and the retained part 21 preferably is not more than 1mm, more preferably no more than 0.5mm.Pressure roller 20 preferably should be made by having chemical-resistant fluororesin (for example PVDF or PEEK), is perhaps made by polyurethane.Interval between fixture washer jet 26 and the retained part 21 (position relation) preferably is not more than 1mm, more preferably no more than 0.5mm, as the same with the interval between the retained part 21 with fixture suction nozzle 24.
If fixture suction nozzle 24 is not set, the fluid that has adhered to retained part 21 contacts with substrate W once more owing to the rotation of pressure roller 21, thereby (referring to Fig. 2 A) diffusion on the tangential direction X of substrate W and pressure roller 20 of this fluid.In order to prevent this diffusion of fluid, pump orifice 23 and supply opening 25 following layouts: if rotate on the direction shown in the arrow of pressure roller 20 in Fig. 2 A, the fixture washer jet 26 with supply opening 25 is arranged on the contact portion W between the retained part 21 and substrate W on the direction of rotation of pressure roller 20
CThe place ahead.And the fixture suction nozzle 24 with pump orifice 23 is arranged on the place ahead of fixture washer jet 26 on the direction of rotation of pressure roller 20.When pressure roller 20 rotated on the direction shown in the arrow in Figure 20 A, the fluid on the substrate W peripheral part was by contact portion W
CShift to the retained part 21 of pressure roller 20, the retained part 21 that has been stained with fluid then cleans by the washing fluid of supply opening 25 supplies of fixture washer jet 26.When pressure roller 20 rotations, the fluid that has been cleaned fluid treatment arrives before the pump orifice 23 of fixture suction nozzle 24, the device suction nozzle that is fixed then 24 suctions.This set can prevent the peripheral part diffusion of fluid from substrate W.Therefore, can prevent the pollution of substrate W and prevent to produce watermark.And, because the fluid on the substrate W peripheral part is by 16 suctions of inclined-plane suction nozzle, so even under the situation of substrate W with slow-speed of revolution rotation, also can remove fluid from the peripheral part of substrate W.
Fig. 2 C is the cross-sectional view of the improvement example of substrate holder shown in Fig. 2 B.Shown in Fig. 2 C, suction channel 27 can be arranged on pressure roller 20 inside, so fluid (for example liquid) is by being sucked at retained part 21 openings and one or more openings of being communicated with suction channel 27.Although the foregoing description illustrates the example that fixture washer jet 26 wherein is set,, if do not need clean, also can save fixture washer jet 26.
In order to prevent that the fluid on the substrate W from adhering to fixture washer jet 26 and fixture suction nozzle 24, fixture washer jet 26 and fixture suction nozzle 24 can be set to away from substrate W, shown in dotted line among Fig. 2 A.Particularly, fixture washer jet 26 and fixture suction nozzle 24 can be arranged on contact portion W
COpposite side with respect to pressure roller 20 centers.
Under the situation of on-chip fluid unshowned suction nozzle suction by inclined-plane suction nozzle 16 or other, pressure roller 20 is not to clean, and therefore can save fixture washer jet 26.In this case, shown in Fig. 2 D, fixture suction nozzle 24 preferably be arranged on the tangent line of pressure roller 20 and substrate W on, and be located at contact portion W on pressure roller 20 and the substrate W direction of rotation
CThe place ahead.And in this case, preferably, the pump orifice 23 of fixture suction nozzle 24 is towards contact portion W
C, and near contact portion W
CBe provided with.Fixture suction nozzle 24 can be arranged to such state, that is, make pump orifice 23 keep and contact portion W
CThe fluid contact of last reservation.
As shown in Figure 1, inclined-plane suction nozzle 16 has the current-carrying part of being made by electric conducting material 51.Current-carrying part 51 is positioned at the top of inclined-plane suction nozzle 16, and by lead (not shown) ground connection.In this embodiment, although have only the part of inclined-plane suction nozzle 16 to make, also can whole inclined-plane suction nozzle 16 make by electric conducting material by electric conducting material.Except inclined-plane suction nozzle 16, the inclined-plane suction nozzle can also be set below substrate W.Equally, shown in Fig. 2 A, fixture suction nozzle 24 has the current-carrying part of being made by electric conducting material 52 respectively.Current-carrying part 52 is positioned at the top of fixture suction nozzle 24, and by lead (not shown) ground connection.In the present embodiment, although have only the part of fixture suction nozzle 24 to make by electric conducting material, also can be whole fixture suction nozzle 24 make by electric conducting material.In 4 fixture suction nozzle 24 at least one can have current-carrying part 52.
In general, when by inclined-plane suction nozzle 16 or fixture suction nozzle 24 pumping liquids, liquid and air mix mutually, thereby produce frictional force between them, therefore may be owing to friction produces static.In the present embodiment, because inclined-plane suction nozzle 16 and fixture suction nozzle 24 be by current-carrying part 51 and 52 ground connection, so prevent substrate W because static and charged.Therefore, can eliminate because static and, and improve the output of product the adverse effect of the circuit that forms on the substrate W upper surface.Replace inclined-plane suction nozzle 16 and fixture suction nozzle 24, substrate holder 11 (pressure roller 20) can have the current-carrying part that electric conducting material is made, and substrate holder 11 can be passed through this current-carrying part ground connection.Equally in this case, can eliminate static.
Fig. 3 A and 3B are the schematic diagram of explanation near the fixture suction nozzle effect of substrate holder setting.Particularly, Fig. 3 A illustrates the situation that the fixture suction nozzle is not set.In this case, when pressure roller 20 and substrate W rotation, remaining fluid D shifts to retained part 21 on peripheral part, as symbol D ', D " shown in.On the other hand, Fig. 3 B illustrates the situation that the fixture suction nozzle is set.In this case, the fluid D on the substrate W peripheral part shifts to the retained part 21 of pressure roller 20, shown in symbol D ', then by 24 suctions of said fixing device suction nozzle.Like this, the retained part 21 of the fluid on the substrate W by the pressure roller 20 device suction nozzle 24 that is fixed is aspirated reposefully, therefore can reduce the amount of the fluid D that remains on the substrate W widely.Therefore can promote the displacement of fluid and prevent the residual and diffusion of fluid.
Fig. 4 is the schematic diagram that shows the discharge path of fixture suction nozzle and inclined-plane suction nozzle.As shown in Figure 4, inclined-plane suction nozzle 16 and fixture suction nozzle 24 all are connected to gas-liquid separator 31, and further are connected to vacuum source (ejector) 32 by gas-liquid separator 31.
According to the substrate processing device of present embodiment, though at substrate to be not more than 500min
-1Rotary speed rotation and centrifugal force hour, also can remove the fluid that remains on the substrate perimeter part.Therefore, when finishing clean, the film of uniform washing fluid can be on substrate surface, formed, therefore substrate can be cleaned equably.And substrate can rapid draing.
In general, under the situation of and rotary substrate fixing with the substrate holder with pressure roller, fluid remains on the contact portion between substrate holder and the substrate probably.And, the fluid that has adhered to substrate holder tend to owing to the substrate with rotation contacts with the tangent direction of substrate holder or substrate on spread.According to the substrate processing device of present embodiment, in fluid rotation and will be once more with before substrate contact, the fluid that the has adhered to substrate holder device suction nozzle 24 that just is fixed is aspirated.Therefore, the old fluid that uses in processing can not adhere on the substrate again.And, suppressed diffuse fluid widely owing to low speed rotation.When substrate to be not more than 500min
-1Especially about 100min
-1The rotation of low rotary speed the time, can obtain good effect, thereby prevent diffuse fluid and promote the displacement of fluid.But this substrate processing device is not limited to the low speed rotation operation.
Inclined-plane suction nozzle 16 is near the peripheral part setting of substrate W, and the fluid on the peripheral part (chamfered portion) of suction substrate W.Interval between the surface of inclined-plane suction nozzle 16 and substrate W (for example peripheral part) preferably is not more than 1mm, more preferably no more than 0.5mm.Preferred inclined-plane suction nozzle 16 is provided with near top, lateral edge portion or the bottom of the peripheral part of substrate W.Two or more inclined-planes suction nozzle can be provided with near two in top, lateral edge portion or the bottom of substrate W peripheral part at least.
Fig. 5 is the end view that shows an example, wherein gas supply nozzle 13 and 14 is arranged on the substrate W above and below of being fixed and being rotated by the pressure roller 20 of substrate holder 11, and supplies dry gas from upper surface from the gas supply opening 17 and 18 of gas supply nozzle 13 and 14 to substrate W and lower surface.Particularly, in this embodiment, can be arranged on the upper surface side of substrate W at the gas supply nozzle 13 that upwards swing in the footpath of substrate W, and the gas supply nozzle 14 that can swing is arranged on the lower face side of substrate W.Although present embodiment illustrates the example that gas supply nozzle 13 and 14 wherein is separately positioned on the upper and lower face side of substrate W, the gas supply nozzle can also be arranged on upper surface side or the lower face side of substrate W.From each of gas supply nozzle 13 and 14 to substrate W supply dry gas such as inert gas (for example nitrogen) or low humidity gas (for example humidity is not more than 10% dry air).
Preferably, heater is set, being used to heat will be from the dry gas of gas supply nozzle 13 and 14 ejections.By this structure, the dry gas that has heated can be supplied to substrate W, thereby is used for dry substrate W.Particularly, the dry gas by to the supply heating of the surface of substrate W can quicken the drying of substrate W.Usually, when to the wet substrate supply gas, the temperature of substrate is owing to the heating of vaporization reduces.By heating this gas, the gas with heating is supplied to substrate then, can shorten the drying time of substrate.
Substrate holder 11 is come rotary substrate W by the frictional force between the retained part 21 of the pressure roller 20 that utilizes substrate W and maintenance and contact with substrate W marginal portion.According to this substrate holder 11, gas supply nozzle 13 and 14 can be arranged on the upper and lower near surface of substrate W.Under the situation of revotating card dish-type substrate holder, rotary chuck should be arranged on substrate below, so rotary chuck makes be difficult to be provided with the gas supply nozzle that can swing near the substrate lower surface.Therefore, do not have the revotating card dish-type substrate holder of gas supply nozzle can't be under the situation of low speed rotation dry substrate.Therefore, revotating card dish-type substrate holder need be operated with high rotation speed, and to be used for dry substrate, therefore the fluid that spreads owing to high speed rotating tends to produce watermark.Relative therewith, in the present embodiment, substrate W is fixed by pressure roller 20 in the mode of a contact, i.e. the pressure roller way of contact, and inclined-plane suction nozzle 16 is set and fixture suction nozzle 24 is aspirated fluid.Therefore, even during with low speed rotation, also can remove the fluid on the substrate W peripheral part effectively at substrate W.Therefore, drying time can be shortened.And, owing to have only the small volume of fluid diffusion, so can prevent from substrate W, to produce watermark.
In order to prevent to produce watermark on substrate, eliminating moisture and oxygen are effective from substrate atmosphere on every side.In the present embodiment, be not higher than 10% low humidity gas to substrate supplying inert gas (for example nitrogen) or humidity, thereby can remove moisture and oxygen effectively.According to this dried, can be under not with the situation of high speed rotating substrate dry substrate and prevent diffuse fluid effectively.
If when the dry substrate core, dry gas incides on the substrate obliquely, and regional dry around substrate center part must be faster than core.As a result, the fluid that remains on the substrate center part adheres to the arid region possibly, thereby produces watermark.And, if dry gas incides on the substrate obliquely, dry gas bump bulk zone, thereby reduce drying capacity.Therefore, preferred vertical ground is to substrate supply dry gas.Given this, gas supply nozzle 13 and 14 is provided with perpendicular to substrate W.Therefore, gas supply nozzle 13 and 14 gas supply opening 17 and each of 18 are supplied dry gas on the direction perpendicular to substrate W surface.
Distance between distance between gas supply opening 17 and the substrate W upper surface and gas supply opening 18 and the substrate W lower surface is adjusted by the distance adjusting mechanism respectively.As shown in Figure 5, when gas supply nozzle 13 and 14 will be supplied dry gas, gas supply nozzle 13 and 14 moved to the position near the upper and lower surface of substrate W, shown in the two point dotted line.In order to improve drying capacity, preferred shortening is the time cycle of drying regime with substrate from wet state-transition, promptly is in the time cycle of leather hard.Therefore, preferably use the little zone of dry gas rapid draing of powerful ejection, rather than with the slowly dry big zone of the dry gas of faint ejection.If gas supply opening 17 and 18 is away from substrate W, dry gas disperses in its traveling process.Therefore, gas supply nozzle 13 and 14 should be preferably when the supply dry gas near substrate W.Particularly, the distance between each of substrate W and gas supply opening 17 and 18 is preferably in the 30-50mm scope, more preferably in the scope of 3-10mm.And preferably, the dry gas of discharging from gas supply opening 17 and 18 are in dry gas indiffusion when substrate W advances.By the supply cleaning fluid when carrying out clean, gas supply nozzle 13 and 14 need be moved and leave substrate W.Given this, gas supply nozzle 13 and 14 needs to move enough distances.An important gas supply condition of dry substrate is a gas velocity.When gas supply opening 17 (perhaps 18) during near substrate W, in the scope of gas velocity that gas supply opening 17 (or 18) is located to wish at 10-3000m/s.The gas velocity of gas supply opening can be calculated according to the supply of fluid and the discharge area of gas supply opening.Particularly, drying to as if the situation of hydrophobic film under, gas velocity preferably in the scope of 10-300m/s, drying to as if the situation of hydrophilic film under, gas velocity is preferably in the scope of 400-1000m/s.
In the substrate processing device of present embodiment, the footpath that upper surface side gas supply nozzle 13 and lower face side gas supply nozzle 14 can be shown in substrate W as arrow V among Fig. 5 upwards, move between the core of substrate W and peripheral part.By from substrate center part to peripheral part mobile gas supply nozzle 13 and 14, can be from the core of substrate W to peripheral part dry substrate W gradually.Particularly, when fixing with rotary substrate W with substrate holder 11, supply dry gas from gas supply nozzle 13 and 14 to substrate W, and in the supply dry gas, gas supply nozzle 13 and 14 is shifted to peripheral part from the core of substrate W, makes that the fluid on the substrate W moves towards the peripheral part of substrate W.The fluid that has moved on to the peripheral part of substrate W is aspirated by inclined-plane suction nozzle (peripheral pump unit) 16 then.Fluid moves to the substrate holder 11 that maintenance contacts with substrate W marginal portion again, is aspirated and removes by the fixture suction nozzle (fixture pump unit) 24 (referring to Fig. 2 A) that is provided with near substrate holder 11 then.
As shown in Figure 6A, can have a plurality of gas supply nozzle a1 to c4 and diameter and the essentially identical discoideus gas supply unit 19 of substrate W, replace using the gas supply nozzle 13 and 14 that to swing in upper surface side or the lower face side setting of substrate W.In this case, begin regularly and supply stop timing to be provided with independently of one another to the supply of the dry gas of c4 from gas supply nozzle a1, make each gas supply nozzle a1 can begin to supply dry gas and stop supplies dry gas in different timings to c4.The flow velocity of the dry gas of supply also can be provided with independently of one another from gas supply nozzle a1 to c4.For example, the gas supply nozzle a1 that faces substrate W core is with low flow velocity supply dry gas, the gas supply nozzle b1, b2, b3 and the b4 that face substrate W mid portion are with the flow velocity supply dry gas higher than gas supply nozzle a1, and the gas supply nozzle c1, c2, c3 and the c4 that face substrate W peripheral part are with the flow velocity supply dry gas higher than gas supply nozzle b1, b2, b3 and b4.By this structure, even will differ from one another by the target area of gas supply nozzle drying, the also whole surface of dry substrate equably.
Can control the switch timing of the valve that is communicated with to c4 with corresponding gas supply nozzle a1 independently.For example shown in Fig. 6 B, open the mode of these valves, make gas supply nozzle a1, gas supply nozzle b1, b2, b3 and b4 and gas supply nozzle c1, c2, c3 and c4 begin to supply dry gas in this order; And close the mode of these valves, make gas supply nozzle a1, gas supply nozzle b1, b2, b3 and b4 and gas supply nozzle c1, c2, c3 and c4 stop supplies dry gas in this order.By this structure, can be in substrate rotation supply dry gas to substrate, thereby on-chip fluid can be moved to the peripheral part of substrate according to the order of core, mid portion and the peripheral part of substrate.Like this, by the fluid on substrate perimeter part mobile substrate, can prevent reliably that fluid from adhering to the arid region.In order to remove the fluid that remains on the substrate perimeter part fast, gas supply nozzle c1, c2, c3 and c4 can at first begin the peripheral part supply dry gas to substrate, shown in Fig. 6 C.
By travel mechanism's (not shown) make progress in the footpath of substrate W mobile gas supply nozzle 13 and 14.These travel mechanisms can change the translational speed of gas supply nozzle 13 and 14 according to the radial position of gas supply nozzle 13 and 14.From gas supply nozzle 13 and 14 during to the substrate W supply dry gas of rotation, core is by rapid draing.But, along with gas supply nozzle 13 and 14 is shifted to the peripheral part of substrate W, dry area to strengthen, therefore to spend a lot of time dry substrate W.Fig. 7 A illustrates the translational speed and the gas supply sequential chart regularly of explanation gas supply nozzle.Shown in Fig. 7 A, gas supply nozzle 13 (or 14) is at the translational speed height of substrate W core, and along with gas supply nozzle 13 (or 14) is shifted to the peripheral part of substrate W and reduced gradually.Particularly, following relational expression is useful in the translational speed V of core
1, at the translational speed V of mid portion
2, with at the translational speed V of peripheral part
3:
V
1＞V
2＞V
3
Like this, gas supply nozzle 13 that directly upwards moves at substrate W and 14 translational speed are along with changing with the relative position of substrate W.Particularly, when gas supply nozzle 13 and 14 when wanting dry small size, i.e. the core of substrate W, gas supply nozzle 13 and 14 is with high translational speed V
1Move, along with gas supply nozzle 13 and 14 moves towards the large-area peripheral part of having of substrate W, gas supply nozzle 13 and 14 translational speed are reduced to V
2, arrive V then
3Therefore, the amount of the dry gas of unit are supply can be uniformly on the whole surface of substrate W, therefore dry substrate W equably.Can also prevent that fluid from adhering to the arid region.Shown in Fig. 7 B, gas supply pressure P
1Can be set in substrate W central part office low, when gas supply nozzle 13 and 14 when substrate W peripheral part moves, can bring up to P
2In Fig. 7 A and 7B, the time T of stop supplies gas
1The moment of expression gas supply opening 17 (or 18) when being positioned at substrate W marginal portion radially inside 2 to the part of 10mm distance, time T
2The moment of expression when gas supply opening 17 (or 18) passes through substrate W marginal portion.Gas supply nozzle 13 and 14 translational speed and gas supply pressure can change simultaneously.
Usually, when dry substrate, its surface color changes.Particularly, along with the thickness change of liquid film on the substrate surface, the form of reflection of light also changes.Therefore, there is aberration on the surface between wet substrate and dry substrate.Preferably, substrate processing device has the optics (for example CCD, reflectometer, interfere type optical measurement device) of the drying regime that is used to detect substrate.Monitor can be set monitor the drying regime of substrate, thereby adjust the translational speed of gas supply nozzle 13 and 14 according to the drying regime of substrate automatically.For example, monitoring on gas supply nozzle moving direction in the part of this substrate of gas supply nozzle the place ahead 10mm distance, if make the color of this part become default color,, start the gas supply nozzle then and move towards the peripheral part of substrate W with the expression drying regime.According to this control method, even want the area of dry target part upwards to move in the footpath of substrate W and change along with gas supply nozzle 13 and 14, also dry substrate W equably.
Shown in Fig. 8 A, if directly over the peripheral part of substrate W or under supply gas, in the marginal portion of substrate W turbulence takes place just.As a result, fluid (for example treat liquid) enters the opposite side of substrate W then, thereby causes pollution and watermark from substrate W or substrate holder 11 diffusions.And, shown in 8C, if the gas direct collision on the inner surface of container 10, fluid and particle on container 10 inner surfaces spread around.In addition, if at the position stop supplies gas away from substrate W marginal portion, substrate W marginal portion is just can not be fully dry so, and if directly over substrate W marginal portion or under supply gas, fluid also can spread so.As mentioned above, the time T among Fig. 7 A and the 7B
2It is the moment of gas supply opening 17 (or 18) by substrate W marginal portion.Because gas supply nozzle 13 (or 14) is in time T
1The stop supplies dry gas, promptly just before gas supply opening 17 (or 18) arrives substrate W marginal portion, thus can prevent the marginal portion diffusion of fluid from substrate W, and prevent the pollution of substrate W.In view of these reasons, the optimum seeking site of stop supplies dry gas is positioned at the distance of substrate W marginal portion radially inside 2 to 10mm.Selectively, preferred stop supplies dry gas when gas supply opening 17 (or 18) arrives the part that does not form circuit (pattern) on it.Behind the stop supplies dry gas, gas supply nozzle 13 and 14 preferably is moved and leaves substrate W.
Shown in Fig. 8 B, preferably on the extended line of gas supply nozzle 13 and 14 moving directions, substrate W peripheral part near several outlets 33 are set.Particularly, the dry gas that has been used for dry substrate W may comprise the moisture of the fluid (for example treat liquid) that adheres on the substrate W.According to the outlet 33 shown in Fig. 8 B, the dry gas that has been used for dry substrate W can discharge apace by outlet 33, therefore can prevent to produce watermark.In container 10, dry gas stream forms from the direction of gas supply opening 17 and 18 to substrate W is local.Therefore, behind dry substrate W, dry gas can be discharged to the outside fast by outlet 33, thereby can prevent to upset the atmosphere in the container 10.If the internal diameter of gas supply nozzle 13 and 14 is constant, by changing the gas supply pressure pressure of the dry gas of each supply of gas supply opening 17 and 18 (promptly from), thereby can easily control the flow velocity (being flowing velocity) of dry gas.Can be provided for the pressure sensor of measurement gas supply pressure, thereby control the flow velocity (being flowing velocity) of dry gas by the control gaseous supply pressure.Shown in Fig. 7 B, gas supply pressure can be set to low at first, and can improve when gas supply nozzle 13 and 14 arrives the precalculated position.Type according to substrate (wafer) type or the film that on substrate surface, forms, can set in advance drying condition, for example the distance between the rotary speed of substrate W, substrate W surface and gas supply nozzle 13 and 14, gas supply nozzle 13 and 14 translational speed and gas supply pressure.In this case, during dried monitoring corresponding to the measured value of each drying condition.The preset data of measured value and drying condition compares, and so that the mode that the measured value maintenance equates with preset data is controlled the dried of substrate.
Fig. 9 is the plane graph that shows according to the substrate processing device of second embodiment of the invention, and Figure 10 is the end view that shows substrate processing device shown in Figure 9.Identical with first embodiment or corresponding parts are represented with identical Reference numeral in the present embodiment, and followingly no longer are repeated in this description.
Substrate processing device 1 ' comprises container 10 and substrate holder 11a, the 11b, 11c and the 11d that are arranged in the container 10.Substrate W (for example semiconductor wafer) is contained in the container 10, and fixes and rotate by substrate holder 11a, 11b, 11c and 11d.Each substrate holder 11a, 11b, 11c and 11d have fixture suction nozzle 24a, 24b, 24c and 24d and fixture washer jet 26a, 26b, 26c and 26d, and they all are provided with near substrate holder 11a, 11b, 11c and 11d.When handling fluid (for example chemical liquid) and be fed on the surface of substrate W, handle fluid and shift to substrate holder 11a, 11b, 11c and 11d from the peripheral part of substrate W, handle (for example cleaning or etching) substrate W simultaneously.The be fixed cleaning fluid of device washer jet 26a, 26b, 26c and 26d supply of the processing fluid that has moved on to substrate holder 11a, 11b, 11c and 11d is handled the device suction nozzle that is fixed then 24a, 24b, 24c and 24d suction.
Substrate processing device 1 ' also comprises gas supply nozzle 13 and 14, therefore supplies dry gas from each gas supply opening 17 and 18 of gas supply nozzle 13 and 14 to substrate W, thereby the upper surface of dry substrate W and lower surface.Substrate processing device 1 ' also comprises inclined-plane suction nozzle 16, is used to aspirate the processing fluid on the peripheral part (chamfered portion) of substrate W.Although do not illustrate in Fig. 9, substrate processing device 1 ' comprises washer jet (referring to the Reference numeral among Fig. 1 12 and 15).As above-mentioned substrate processing device 1, in order to promote the drying of substrate W peripheral part, and prevent to produce watermark, fixture washer jet 26a, 26b, 26c and 26d do not supply cleaning fluid during dried.
Substrate processing device 1 ' also comprises cavernous body cylinder (sponge roll) type cleaning means 29a and 29b, to be used to clean the upper and lower surface of substrate W.It is as follows that substrate processing device 1 ' is carried out clean: from unshowned washer jet when the upper and lower surface of substrate W provides cleaning fluid, cavernous body cylinder type cleaning means 29a and 29b are around the axle rotation of himself, and with the upper and lower surperficial sliding contact of substrate W, thereby clean upper and lower surface by the substrate W of substrate holder 11a, 11b, 11c and 11d rotation.After cleaning substrate W, cavernous body cylinder type cleaning means 29a and 29b retreat into going-back position respectively, shown in the two point dotted line among Figure 10.Then, gas supply nozzle 13 and 14 is moved and near substrate W, supplies the upper and lower surface of dry gas to substrate W then, so that dry substrate W.
In substrate processing device 1 ', can be provided for cleaning at least one sponge build cleaning means of the peripheral part of substrate W.In this case, this cavernous body cylinder type cleaning means is around the axle rotation of himself extending perpendicular to substrate W surface, and with the peripheral part sliding contact of the substrate W of rotation.In scrub process, the above-mentioned cavernous body cylinder type cleaning means that is used to clean the cavernous body cylinder type cleaning means 29a and the 29b on the upper and lower surface of substrate W and is used to clean substrate W peripheral part can be operated simultaneously, to clean substrate W.Can apply hyperacoustic cleaning fluid to the upper and lower surface supply of substrate W from the fluid supply opening of washer jet (referring to the Reference numeral Fig. 1 12 and 15), handle thereby carry out ultrasonic waves for cleaning, can be cleaned the fluid pump orifice suction of nozzle with the cleaning fluid of crossing.Can synchronously carry out scrub process and ultrasonic waves for cleaning handles.
The preferred operations flow process of substrate processing device 1 ' is as follows: the clean of etch processes → use chemical liquid or ultrasonic waves for cleaning processing → rinsing processing → scrub process → rinsing processing → dried.Other preferred operating process is as follows: second clean of first clean of etch processes → use chemical liquid or first ultrasonic waves for cleaning processing → rinsing processing → scrub process → use chemical liquid or the second ultrasonic waves for cleaning processing → rinsing processing → dried.Like this, substrate processing device 1 ' itself can be finished several processing.According to this substrate processing device 1 ', can prevent that handling fluid spreads from substrate holder, and finish various processing and on substrate, do not produce watermark.
Figure 11 is the schematic plan view that shows in conjunction with the substrate handling system of Fig. 1 or substrate processing device shown in Figure 9.As shown in figure 11, substrate handling system 71 comprises two wafer case 81A and the 81B, the plater 84 that is used for plating substrate W that are used for holding therein a plurality of substrate W (for example semiconductor wafer), is used for the Etaching device 82 of etch substrate W and is used to clean and the substrate processing device 1 (or 1 ') of dry etched substrate W.Substrate handling system 71 also comprises the first automatic conveyor 85A and the second automatic conveyor 85B, is used for transmitting substrate W from a said apparatus to another said apparatus.Substrate handling system 71 also comprises the buffer table 86 with upper and lower shelf, and when substrate W transmitted between the first automatic conveyor 85A and the second automatic conveyor 85B, two substrate W were interim placed apart on these shelves.In this substrate handling system 71, identical with substrate processing device 1, plater 84 or Etaching device 82 are single-wafer processing devices of treatment substrate one by one.
Each of wafer case 81A and 81B has a plurality of shelf (not shown), makes several substrates W be contained in respectively in these shelves.A substrate W who is contained among the wafer case 81A (or 81B) is removed by the first automatic conveyor 85A, and is sent to the second automatic conveyor 85B by buffer table 86.Substrate W is sent to plater 84 by the second automatic conveyor 85B, carries out plating then in plater 84.Then, substrate W is transmitted to Etaching device 82, carries out etching again in Etaching device 82.
After Etaching device 82 was finished etch processes, substrate W was sent to substrate processing device 1 by the second automatic conveyor 85B.In substrate processing device 1, in fixing and rotary substrate W in the above described manner, washer jet 12 and 15 is handled fluid to substrate W upper and lower surface supply, and handles fluid from the upper and lower area suction of substrate W, thereby cleans upper surface and the lower surface of substrate W.Therefore, the product that produces in the etch processes is by substrate processing device 1 flush away.Especially remove the lip-deep fine particle of substrate W and the fine particle in the surface groove.Substrate processing device 1 (or 1 ') can be finished two step clean.Particularly, can utilize acidic cleaning solution (for example fluoric acid) to finish first clean, can utilize alkaline cleaning fluid to finish second clean.
After clean, from the upper and lower surface supply dry gas of gas supply nozzle 13 and 14 (referring to Fig. 1) to substrate W, thereby the dry substrate W that has cleaned.Dry substrate W sends wafer case 81A (or 81B) via buffer table 86 from substrate processing device 1 by the second automatic conveyor 85B and the first automatic conveyor 85A successively.Substrate W is contained among the substrate box 81A (or 81B) then, thereby finishes a series of processing.Like this, the substrate processing device 1 (or 1 ') according to present embodiment is applicable to the substrate handling system 71 of carrying out various processing (for example plating processing, etch processes, clean and dried).Especially, this substrate processing device 1 (or 1 ') can efficiently be finished clean and dried in high quality.Substrate processing device 1 (or 1 ') can also shorten the operating time, and can help to improve the output of product.
In this substrate handling system 71, Etaching device 82 and plater 84 can be used for the etch substrate chamfered portion the inclined-plane Etaching device, coating layer or similar layer are carried out the electrobrightening device of electrobrightening or the CMP device that substrate surface carries out chemico-mechanical polishing are replaced.Selectively, Etaching device 82 and plater 84 can replace with substrate processing device 1 (or 1 ') respectively, thereby substrate handling system 71 has three substrate processing devices 1 (or 1 ') that are used for carrying out simultaneously etch processes and/or clean and dried.
Below, will be with reference to the substrate processing device of Figure 12 explanation according to third embodiment of the invention.
Figure 12 is the schematic perspective view that shows according to the substrate processing device of third embodiment of the invention.Identical or corresponding parts are represented with identical Reference numeral among present embodiment and first embodiment, and below will no longer describe.
As shown in figure 12, substrate processing device comprises a plurality of (being four in the present embodiment) substrate holder 11.Substrate holder 11 comprises the pressure roller 20 of the axle rotation that centers on them respectively.The fixture suction nozzle 24 that is used for aspirating the liquid (for example rinsing liquid) of the retained part (referring to the Reference numeral 21 of Fig. 2 B) that has adhered to pressure roller 20 is provided with near pressure roller 20 respectively.These pressure rollers 20 are fixed and closely contact with the peripheral part with substrate W, and with identical direction rotation, substrate W is by pressure roller 20 fixing and rotations thus.
Rinsing liquid supply nozzle 40 and chemical liquid supply nozzle 42 are arranged on the substrate W top of being fixed by pressure roller 20.Rinsing liquid supply nozzle 40 supply rinsing liquids are to the core of going up (preceding) surface of substrate W, and chemical liquid supply nozzle 42 supplying chemical liquids are to the core of the upper surface of substrate W.Rinsing liquid supply nozzle 40 is with respect to the angle of 60 to 90 ° of scopes of substrate W surface tilt.In order to supply cleaning fluid with low flow velocity to substrate W, the aperture of rinsing liquid supply nozzle 40 preferably is not more than 3mm.In the present embodiment, the aperture of rinsing liquid supply nozzle 40 is 4mm.Preferred at least one rinsing liquid supply nozzle is arranged on substrate W top.
Two rinsing liquid supply nozzle 41A and 41B and two chemical liquid supply nozzle 43A and 43B are arranged on substrate W below.Rinsing liquid supply nozzle 41A supply rinsing liquid is to the core on following (back of the body) surface of substrate W, and rinsing liquid supply nozzle 41B supply rinsing liquid is to the peripheral part of the lower surface of substrate W.Preferably at least two rinsing liquid supply nozzles are arranged on substrate W below.Similarly, chemical liquid supply nozzle 43A supplying chemical liquid (for example cleaning fluid) is to the core of substrate W lower surface, and chemical liquid supply nozzle 43B supplying chemical liquid is to the peripheral part of substrate W lower surface.Each of each of rinsing liquid supply nozzle 40,41A and 41B and chemical liquid supply nozzle 42,43A and 43B is used as the treat liquid supply nozzle to substrate W supply predetermined liquid, and corresponding to washer jet shown in Figure 1 12 and 15.
These gas supply nozzles 13 and 14 are separately positioned on the swing arm 35 swung by travel mechanism 37 and 38 and 36 top, so gas supply nozzle 13 and 14 upwards moves in the footpath of substrate W.Inert gas (for example nitrogen) is preferably used as from the dry gas of gas supply nozzle 13 and 14 supplies.
The operation that below explanation is had the substrate processing device of said structure.In the following description, has the semiconductor wafer of the low-k film that exposes at its part surface as substrate W.At first, substrate W is fixed by the pressure roller 20 of substrate holder 11 and rotates with low rotary speed.In this state, from the upper surface supply rinsing liquid of rinsing liquid supply nozzle 40 to substrate W.Rinsing liquid is because surface tension and centrifugal force and spread on the upper surface of substrate W, thereby the upper surface of substrate W is all covered by the film of rinsing liquid.At this moment, fixture suction nozzle 24 is not worked.The part rinsing liquid flows out from the peripheral part of substrate W.But rinsing liquid is being supplied to substrate W than the higher flow velocity of rinsing liquid that flows out from substrate W, so the film of rinsing liquid always can form on the upper surface of substrate W.When rinsing liquid supply nozzle 40 was supplied to the upper surface of substrate W, rinsing liquid can be supplied to the lower surface of substrate W from rinsing liquid supply nozzle 41A and 41B at rinsing liquid.
In dried, gas supply nozzle 13 and 14 is shifted to the core of substrate W, and dry gas (for example nitrogen) is supplied to upper surface and the lower surface of substrate W from gas supply nozzle 13 and 14 then.In this state, gas supply nozzle 13 and 14 peripheral parts towards substrate W move.Therefore, the rinsing liquid that has adhered to substrate W upper surface and lower surface is shifted to peripheral part from the core of substrate W.Rinsing liquid is further shifted to pressure roller 20 from substrate W, the device suction nozzle that is fixed then 24 suctions.
As first embodiment, inclined-plane suction nozzle (being peripheral pump unit) can be set near substrate W peripheral part, the rinsing liquid that has therefore moved on to substrate W peripheral part is aspirated by the inclined-plane suction nozzle.
Like this, in substrate W rotation, dry gas (for example nitrogen) is from gas supply nozzle 13 and 14 ejections, and gas supply nozzle 13 and 14 is being shifted to peripheral part from the core of substrate W in substrate W supply dry gas.By this dried, substrate W can be dry under the situation of high speed rotating not.And the drop of rinsing liquid no longer adheres to the surface of dry substrate W, therefore can prevent to form watermark on substrate W.And, because inert gas (for example nitrogen) is supplied to the surface of substrate W, thus the oxygen concentration on substrate W surface can be reduced, and therefore can prevent to produce watermark effectively.
Although preferred substrate W in dried to be not more than 100min
-1Speed rotation, but in order to shorten drying time, substrate W can be with greater than 100min
-1Speed rotation.Under the situation to substrate W execution chemical liquid treatment before rinsing is handled, chemical liquid is supplied to the upper surface of substrate W from chemical liquid supply nozzle 42, so the entire upper surface of substrate W is covered by chemical liquid.Because the processed state of substrate W makes there is not the upper surface of exposure, so can prevent to produce watermark.When chemical liquid was supplied to substrate W upper surface from chemical liquid supply nozzle 42, chemical liquid can be supplied to the lower surface of substrate W from chemical liquid supply nozzle 43A and 43B.
Below with reference to the substrate processing device of Figure 13 explanation according to fourth embodiment of the invention.
Figure 13 is the schematic perspective view that shows according to the substrate processing device of fourth embodiment of the invention.Identical or corresponding components is represented with identical Reference numeral among present embodiment and the 3rd embodiment, and followingly no longer describes.
As shown in figure 13, inclined-plane suction nozzle (being peripheral pump unit) 16 is arranged on the top of substrate W.Inclined-plane suction nozzle 16 is arranged near the substrate W peripheral part, thereby the liquid on the substrate W peripheral part is by 16 suctions of inclined-plane suction nozzle.Inclined-plane suction nozzle 16 has the current-carrying part of being made by electric conducting material 51.Current-carrying part 51 is positioned at the top of inclined-plane suction nozzle 16 and with lead 47 ground connection.In the present embodiment, although only there is the part of inclined-plane suction nozzle 16 to make, also can whole inclined-plane suction nozzle 16 make by electric conducting material by electric conducting material.Except that inclined-plane suction nozzle 16, the inclined-plane suction nozzle can also be arranged on substrate W below.
Gas supply nozzle (the first gas supply nozzle) 13 to substrate W upper surface supply dry gas is arranged on substrate W top, and gas supply nozzle (the second gas supply nozzle) 14 from dry gas to substrate W lower surface that supply is arranged on substrate W below.Gas supply nozzle 13 and 14 is substantially perpendicular to substrate W and extends, and dry gas is discharged towards upper surface and the lower surface of substrate W.Gas supply nozzle 13 is arranged on the top of swing arm 35, and the swinging axle 35a of swing arm 35 is coupled to travel mechanism 37.When travel mechanism's 37 work, swing arm 35 swings, thereby gas supply nozzle 13 upwards moves in the footpath of substrate W.As gas supply nozzle 13, gas supply nozzle 14 is arranged on the top of swing arm 36, and is coupled to travel mechanism 38 by the swinging axle 36a of swing arm 36.Swing arm 36 is by travel mechanism's 38 swings, thereby gas supply nozzle 14 upwards moves in the footpath of substrate W.Inert gas (for example nitrogen) is preferably used as the dry gas from gas supply nozzle 13 and 14 supplies.From gas supply nozzle 13 and 14 the supply the dry gas pressure preferably in the scope of 50-350kPa.If the hypotony of dry gas, even supply nozzle 13 and 14 low speed move, substrate W can not be dry fully.On the other hand, if the dry gas hypertonia, when dry gas was discharged to liquid film, the drop diffusion adhered to substrate W then to produce watermark.Therefore, the pressure of the dry gas of gas supply nozzle 13 and 14 supplies is preferably in the scope of 50-350kPa.
After this, will with reference to figure 14A to 14D explanation gas supply nozzle 13 and 14 with liquid supply nozzle 45 and 46 between the position concern.Figure 14 A is the schematic diagram of position relation between explanation gas supply nozzle shown in Figure 13 and the liquid supply nozzle to 14D.
To shown in the 14D, liquid supply nozzle 45 is positioned at the radial outside of gas supply nozzle 13 as Figure 14 A.Particularly, liquid supply nozzle 45 is positioned at the directly outside of gas supply nozzle 13 upwards of substrate W.Because liquid supply nozzle 45 and gas supply nozzle 13 are fixed in swing arm 35 (referring to Figure 13), liquid supply nozzle 45 and gas supply nozzle 13 upwards move in the footpath of substrate W, therefore move along the arching trajectory shown in the arrow S under the situation that keeps the relative position between liquid supply nozzle 45 and the gas supply nozzle 13.Therefore, when liquid supply nozzle 45 and gas supply nozzle 13 when the peripheral part of substrate W moves, liquid supply nozzle 45 is positioned at the place ahead of gas supply nozzle 13 on its moving direction.W directly makes progress at substrate, and the distance between liquid supply nozzle 45 and the gas supply nozzle 13 preferably arrives in the scope of 30mm 10, is set to 20mm in the present embodiment.If the distance between liquid supply nozzle 45 and the gas supply nozzle 13 is too short, may influences the liquid of liquid supply nozzle 45 supplies from the gas of gas supply nozzle 13, thereby make the liquid diffusion.On the other hand, if the distance between liquid supply nozzle 45 and the gas supply nozzle 13 is oversize, some zone on substrate W surface is not protected by liquid.Therefore, the distance between preferred liquid supply nozzle 45 and the gas supply nozzle 13 arrives in the scope of 30mm 10.
Position relation between liquid supply nozzle 46 and the gas supply nozzle 14 concerns identical with the position between aforesaid liquid supply nozzle 45 and the gas supply nozzle 13.Particularly, shown in Figure 14 C and Figure 14 D, liquid supply nozzle 46 be positioned at gas supply nozzle 14 radially outside.Distance between liquid supply nozzle 46 and the gas supply nozzle 14 preferably arrives in the scope of 30mm 10, is set to 20mm in the present embodiment.Two or more gas supply nozzles can be set in the above and below of substrate W respectively.Similarly, two or more liquid supply nozzles can be set respectively in the above and below of substrate W.
As wherein liquid supply nozzle 45 is the same with the configuration that gas supply nozzle 13 is arranged on the swing arm 35, one or more liquid supply nozzles and one or more gas supply nozzle can be arranged on the one or more swing arms that are provided with except that swing arm 35.Equally in this case, liquid supply nozzle and gas supply nozzle are shifted to peripheral part from the core of substrate W, thereby move along different arching trajectorys simultaneously.Like this because moving liquid supply nozzle and gas supply nozzle, thereby with angle same at interval along radially moving to a plurality of arching trajectorys that peripheral part extends basically from the core of substrate W, therefore dry substrate W equably.As substrate W upper surface side, one or more liquid supply nozzles and one or more gas supply nozzle can be arranged on the one or more swing arms that are provided with except that swing arm 36.Liquid supply nozzle and gas supply nozzle can linearly move, rather than move along arching trajectory.
Below, explanation is had the operation of the substrate processing device of said structure.In the following description, have low-k film and the surperficial semiconductor wafer of Cu film that forms and the oxide-film that on its lower surface, forms of going up thereon as substrate W.And below Cao Zuo example only illustrates from the situation of liquid supply nozzle 45 supply fluids that are arranged on substrate W top.
At first, substrate W is fixing and with 35min by the pressure roller 20 of substrate holder 11
-1Rotary speed rotation.In this state, supply rinsing liquid (pure water) as treat liquid from rinsing liquid supply nozzle 40 to the upper surface of substrate W, supply rinsing liquid (pure water) as treat liquid from rinsing liquid supply nozzle 41A and 41B to the lower surface of substrate W, make at the upper surface of substrate W and the film of lower surface formation pure water.
Then, gas supply nozzle 13 and 14 and liquid supply nozzle 45 and 46 shift to the core of substrate W.In rinsing liquid supply nozzle 40,41A and 41B stop supplies pure water or before just stopping, be the nitrogen of 300kPa from gas supply nozzle 13 and 14 upper surface and lower surface supply pressures immediately, and supply pure water from liquid supply nozzle 45 to the upper surface of substrate W with the flow velocity of 400cc/min to substrate W.In this state, the rotating speed of substrate W is brought up to 80min
-1, gas supply nozzle 13 and 14 and liquid supply nozzle 45 and 46 when giving substrate W supply gas (nitrogen) and liquid (pure water), shift to the peripheral part of substrate W, thereby the upper surface of dry substrate W and lower surface.
From mobile liquid supply nozzle 45 supply pure water the time, at the upper surface formation liquid film of substrate W, so the upper surface of substrate W is protected by liquid film.The nitrogen of gas supply nozzle 13 supplies makes liquid film shift to the peripheral part of substrate W, thus the upper surface of dry substrate W.The liquid film (pure water) that has moved on to the peripheral part of substrate W is by 16 suctions of inclined-plane suction nozzle.Pure water is further shifted to pressure roller 20 from substrate W, the device suction nozzle that is fixed then 24 suctions.Like this, almost when liquid film is formed on substrate W upper surface, remove liquid film, therefore can dry substrate W and thereon the surface go up and produce watermark.
Usually, when by inclined-plane suction nozzle 16 or fixture suction nozzle 24 pumping liquids, liquid and air mix mutually, thereby produce frictional force betwixt, therefore can be owing to friction produces static.In the present embodiment, because inclined-plane suction nozzle 16 and fixture suction nozzle 24 be by current-carrying part 51 and 52 ground connection, so prevent substrate W because static and electrically charged.Therefore, can eliminate that owing to static the circuit that forms on the substrate W upper surface is had a negative impact, and improve the output of product.As substituting of inclined-plane suction nozzle 16 and fixture suction nozzle 24, substrate holder 11 (pressure roller 20) can have the current-carrying part of being made by electric conducting material, and substrate holder 11 can be passed through current-carrying part ground connection.And in this case, can eliminate static.Although in the superincumbent example of operation, liquid supply nozzle 45 supply fluids that are provided with from substrate W upper surface only, but, can also come supply fluid from the liquid supply nozzle 46 that is arranged on substrate W lower surface below according to the type of the film that forms on the substrate W lower surface.If there is the wettability difference between substrate W upper surface and the lower surface, preferably adjust the timing of dry substrate W according to wettability.For example, if substrate W upper surface is higher than the hydrophobicity of lower surface, after gas supply nozzle 14 below being arranged on substrate W and liquid supply nozzle 46 began to move, the gas supply nozzle 13 and the liquid supply nozzle 45 that are arranged on substrate W top just began to move.In this case, for upper surface and the lower surface that finishes dry substrate W simultaneously, upside gas supply nozzle 13 moves with different speed with underside gas supply nozzle 14, thereby arrives the peripheral part of substrate W simultaneously.Therefore, can finish drying simultaneously and have different wettable upper and lower surfaces, and thereby prevent to produce watermark effectively.
Figure 15 A is that demonstration is amplified cross-sectional view according to the part of the improvement example of the substrate processing device of fourth embodiment of the invention, and Figure 15 B is the schematic diagram of seeing from the line XV-XV shown in Figure 15 A.
Shown in Figure 15 A and 15B, thereby the external peripheral surface of moisture suction nozzle 50 around gas supply nozzle 13 is set.Usually, when from the liquid film supply gas of gas supply nozzle 13 on substrate W, produce moisture.If moisture adheres to substrate W, just on substrate W surface, produce watermark.According to present embodiment, before moisture adhered on the substrate W surface, moisture was by 50 suctions of moisture suction nozzle.Can another moisture suction nozzle be set in substrate W lower face side.
Figure 16 is the schematic plan view that shows in conjunction with the burnishing device (CMP device) of substrate processing device shown in Figure 12.
As shown in figure 16, burnishing device comprises a pair of polishing unit 90a and the 90b that are used for polishing substrate, a pair of cleaning module 91a and the 91b of the substrate that is used for cleaning polishing, is used for further cleaning and dry a pair of irradiation modules (according to the substrate processing device of present embodiment) 92a and the 92b that has been cleaned the substrate that module 91a and 91b clean.Each of cleaning module 91a and 91b has and the identical structure of substrate processing device (referring to Fig. 9 and 10) according to second embodiment, but does not have drier (being gas supply nozzle 13 and 14).Each of cleaning module 91a and 91b comprises two cylindrical shape PVA (polyvinyl alcohol) cavernous body 29a and 29b (referring to Fig. 9 and 10).These PVA cavernous bodies (being cleaning means) 29a and 29b respectively keep with when the upper and lower surface of substrate contact around their own rotate.In cleaning module 91a and 91b, substrate is by pressure roller 20 fixing and rotations (referring to Fig. 9).In this state, when cleaning fluid is supplied to substrate, PVA cavernous body 29a and 29b rotation, the therefore upper and lower surface of cleaning substrate.If substrate surface has hydrophobic film for example low-k film or silicon fiml, inclined-plane suction nozzle 16 and outlet 33 (referring to Fig. 9 and Fig. 8 B) are not worked.
In this burnishing device, polishing unit 90a and 90b are arranged on a side of rectangular base.The loading and unloading unit 89 that is used for placing four box 93a, 93b, 93c and 93d holding a plurality of substrates thereon is arranged on the opposite side of substrate.The interim buffer table 95 of placing substrate is arranged on and is connected on the line that polishes unit 90a and 90b and loading and unloading unit 89 when transmitting substrate W between automatic conveyor 94a and 94b and above-mentioned module.Each of automatic conveyor 94a and 94b has joint arm, and this arm is flexible and extend on horizontal plane, and has the upper and lower fixture that is used separately as dried manipulator and wet manipulator.Automatic conveyor 94a is arranged on the place ahead of box 93a, 93b, 93c and 93d, and can be parallel to each box 93a, 93b, 93c and 93d and move.Automatic conveyor 94a moves to one of selecteed box 93a, 93b, 93c and 93d, and removes substrate one by one from the box of selecting.
Usually, the material that forms on substrate surface (for example dielectric film) type changes along with pretreating process.Therefore, substrate surface may present hydrophobicity or hydrophily according to pretreating process.The amount nature that forms the required treat liquid of liquid film on substrate is with regard to whether according to substrate surface presents hydrophobicity or hydrophily changes.Given this, in the present embodiment, controller 105 is set, the appropriate amount of the treat liquid that its storage will be supplied promptly is suitable for the flow velocity of the material that forms on substrate surface.Controller 105 is connected to treat liquid feeding unit 103, thereby adjusts the flow velocity that is supplied to the treat liquid (for example rinsing liquid) of substrate by irradiation modules 92a and 92b from treat liquid feeding unit 103 by controller 105.The composition of the material that formed in pretreating process of input in controller 105 in advance therefore can be with than because centrifugal force and supply rinsing liquid to substrate from the higher flow velocity of rinsing liquid that substrate flows out.Therefore can form the film of rinsing liquid at substrate upper surface.Polishing liquid feeding unit 104 also is connected to controller 105, thereby regulates the flow velocity of the polishing liquid that is supplied to polished surface by controller 105.
Below, with the operation of the above-mentioned burnishing device of explanation.At first, a plurality of substrates of packing in box 93a (and/or box 93b, 93c and 93d), each substrate have comprising of forming as the Cu of interconnection material with as the device portions of the low-k film of dielectric film on its front.Box 93a is placed on the loading and unloading unit 89, and automatic conveyor 94a removes a substrate from box 93a.This substrate is placed on the buffer table 95 by automatic conveyor 94a temporarily, is sent to roll-over unit 96a by automatic conveyor 94a then.Substrate is reversed unit 96a upset, makes the face down of substrate to be sent to conveyer 97a by automatic conveyor 94b then.Substrate be transferred device 97a be transported to the polishing unit 90a pusher 100a and be placed on the pusher 100a.After this, top ring 99a move to pusher 100a directly over the position.Promote pusher 100a, substrate is drawn by the lower surface of top ring 99a and is fixing then.Top ring 99a moves on to the position above the polishing block 98a in fixed substrate.Substrate is pressed against on the polished surface and by top ring 99a and rotates then, and polishing liquid is supplied to the polished surface of rotation simultaneously, thus polishing substrate.
After polishing, substrate is received by propeller 100a, and sends conveyer 97a to from propeller 100a.After this, substrate is sent to roll-over unit 96a by automatic conveyor 94b from conveyer 97a.After by roll-over unit 96a upset, substrate is sent to cleaning module 91a by automatic conveyor 94b.In cleaning module 91a, when cleaning fluid was supplied to the upper and lower surface of substrate, substrate and PVA cavernous body 29a and 29b were respectively with 100min
-1Speed rotation, thereby clean upper and lower surperficial 30 seconds of substrate.The cleaning fluid that uses in this scrub process comprises surfactant.Owing to supply this cleaning fluid to substrate, so the hydrophobic surface of substrate presents hydrophily.Therefore, substrate surface can keep moisture state, thereby should not be exposed to air in the surface.
Subsequently, substrate is sent to irradiation modules (substrate processing device of present embodiment) 92a by automatic conveyor 94b.In irradiation modules 92a, substrate is cleaned by form of a stroke or a combination of strokes PVA cavernous body (not shown), comprises the cleaning fluid of surfactant simultaneously to the substrate supply.After this, comprise the cleaning fluid of surfactant, dry substrate then to substrate supply rinsing liquid with flush away.
Particularly, at form of a stroke or a combination of strokes PVA cavernous body with 60min
-1Speed rotation and substrate with 100min
-1Speed rotation time, form of a stroke or a combination of strokes PVA cavernous body is pressed against on the upper surface of substrate, and with the translational speed swing of 20mm/s to clean substrate.At this moment, the cleaning fluid that comprises surfactant is supplied to substrate, thereby forms the film of cleaning fluid on the entire upper surface of substrate.Subsequently, in order to remove the cleaning fluid that comprises surfactant, supply rinsing liquid to the upper surface of substrate with the flow velocity of 2.5L/min from rinsing liquid supply nozzle 40 (referring to Figure 12), substrate is with 50min simultaneously
-1Speed rotation, thereby the film of rinsing liquid is formed on the entire upper surface of substrate.At this moment, supply rinsing liquid to the substrate lower surface with the flow velocity of 1.5L/min from rinsing liquid supply nozzle 41A and 41B (referring to Figure 12).Pure water, soda water, hydrogen water (hydrogen water) or Ozone Water can be used as rinsing liquid.The two-fluid jet cleaning of two-fluid spray nozzle of mixture that can use wherein the ultrasonic waves for cleaning that contains the chemical liquid of surfactant from the ultrasonic nozzle supply to handle or utilize ejection inert gas (for example nitrogen) and contain the chemical liquid of surfactant is handled, to replace the above-mentioned clean of use form of a stroke or a combination of strokes PVA cavernous body.
Before the rinsing processing finished, gas supply nozzle 13 and 14 (referring to Figure 12) moved on to the position of substrate center part above and below respectively, and began to discharge dry gas (for example nitrogen) when rinsing finishes.In substrate supply dry gas, gas supply nozzle 13 and 14 is shifted to peripheral part from the core of substrate, thereby removes on-chip rinsing liquid, thus dry substrate.According to this dried, rinsing liquid can not become drop.And, owing to substrate rotates with the slow-speed of revolution, so prevent to produce the watermark that forms owing to the drop diffusion.After drying, substrate turns back to the box 93a of loading and unloading unit 89 by automatic conveyor 94a.Although above-mentioned burnishing device has in conjunction with the structure according to the substrate processing device of third embodiment of the invention, also can be bonded in this burnishing device according to the substrate processing device of the 4th embodiment.
Figure 17 shows the schematic plan view of combination according to the electroless device of the substrate processing device of third embodiment of the invention.This electroless device is used to carry out so-called cap plating (cap plating), forms diaphragm selectively on the interconnecting metal that substrate surface exposes.Substrate to be processed is the semiconductor wafer that has as the low-k film of dielectric film, and its surface has the groove of filling as the Cu of interconnection material.Identical with Figure 16 or corresponding parts are represented with identical Reference numeral among Figure 17, below no longer repeat specification.
As shown in figure 17, the electroless device is divided into three zones: loading and unloading area 110, cleaning zone 111 and plating zone 112.In loading and unloading area 110, be provided for placing the roll-over unit 96a of the loading and unloading unit 89 of four box 93a, 93b, 93c and 93d, the substrate that is used to overturn and the automatic conveyor 94a that is used between loading and unloading unit 89 and roll-over unit 96a, transmitting substrate thereon.
In cleaning zone 111, the buffer table 95 that is positioned at loading and unloading area 110 1 sides is set.Two the cleaning module 91a and the 91b that are used for cleaning substrate after the cap plating is handled are positioned at the both sides of cleaning zone 111, and are used for further cleaning two irradiation modules (substrate processing device) 92a of substrate that the substrate that cleaned by cleaning module 91a and 91b and drying cleaned and the both sides that 92b also is positioned at cleaning regional 111.
In cleaning zone 111, also be provided with and be positioned at plating zone 112 1 sides and be used for the prerinse module 114 that the substrate of plating is wanted in prerinse, and the roll-over unit 96b of the substrate that is used to overturn.In addition, at the center of cleaning zone 111 automatic conveyor 94b is set, is used for substrate being sent to another parts from parts at buffer table 95, cleaning module 91a and 91b, irradiation modules 92a and 92b, prerinse module 114 and these parts of roll-over unit 96b.
In plating zone 112, a pair of first pretreatment unit 115a and the 115b that is provided at the substrate surface attached catalyst, be used for the substrate surface of enclosing catalyst is carried out a pair of second pretreatment unit 116a and the 116b of chemical liquid technology and is used for substrate surface is carried out a pair of electroless unit 117a and the 117b that electroless is handled, each is to be arrangeding in parallel.And the end in plating zone 112 is provided with coating solution feeding unit 118.And, movably automatic conveyor 94c is set at the center in plating zone 112.Automatic conveyor 94c transmits substrate from parts to another parts in prerinse module 114, the first pretreatment unit 115a and 115b, the second pretreatment unit 116a and 116b, electroless unit 117a and 117b and these parts of roll-over unit 96b.
The electroless device of present embodiment also comprise treat liquid feeding unit 103 selectively providing chemical liquid body (for example cleaning fluid, chemical liquid, rinsing liquid, coating solution or similar liquids) give cleaning module 91a and 91b, irradiation modules 92a and 92b, the first pretreatment unit 115a and 115b, the second pretreatment unit 116a and 116b, electroless unit 117a and 117b and coating solution feeding unit 118.Treat liquid feeding unit 103 is connected to controller 105, and control by controller 105, its control mode makes predetermined treat liquid be supplied to cleaning module 91a and 91b, irradiation modules 92a and 92b, the first pretreatment unit 115a and 115b, the second pretreatment unit 116a and 116b, electroless unit 117a and 117b and coating solution feeding unit 118 selectively.In this case, adjust from treat liquid feeding unit 103 via irradiation modules 92a and 92b flow velocity by controller 105 to substrate providing chemical liquid body.
The operation of above-mentioned electroless device will be described below.At first, a plurality of substrates of packing in box 93a (and/or box 93b, 93c and 93d), box 93a are placed on the loading and unloading unit 89.Automatic conveyor 94a removes a substrate and sends roll-over unit 96a to from box 93a.Substrate is reversed unit 96a upset, makes substrate have the face down of device portions thereon, is placed on the buffer table 95 by automatic conveyor 94b then temporarily.After this, substrate sends prerinse module 114 to from buffer table 95.
Prerinse module 114 is removed the CMP residue that remains on the low-k film, for example copper.For example, substrate keeps its face down and was immersed in acid solution (being chemical liquid) for example in the 0.5M sulfuric acid about 1 minute, to remove the CMP residue.After this, substrate surface with cleaning fluid for example ultra-pure water clean.
Subsequently, substrate sends the first pretreatment unit 115a (or 115b) to by automatic conveyor 94c.In the first pretreatment unit 115a, substrate keeps its face down, and catalyst adheres to substrate surface then.By substrate being immersed in for example 0.005g/L PdCl
2With adhered to catalyst in the mixed solution (being chemical liquid) of 0.2mol/L HCl in about 1 minute.By this technology, the surface as the Pd (palladium) of catalyst adheres to interconnection (Cu) therefore forms the Pd seed crystal as the catalyst seed crystal on interconnect surface.After this, with pure water (DIW) clean substrate surfaces.
Then, the substrate that is stained with catalyst on it sends the second pretreatment unit 116a (or 116b) to by automatic conveyor 94c.In this second pretreatment unit 116a, substrate keeps its face down and substrate surface is carried out chemical liquid treatment.For example, substrate is immersed in and comprises for example Na
3C
6H
5O
72H
2In the solution of O (natrium citricum) (being chemical liquid), with the surface of neutralization interconnection (Cu).After this, use the pure water clean substrate surfaces.Like this, carry out the preliminary treatment of electroless on substrate, substrate sends electroless unit 117a (or 117b) to by automatic conveyor 94c then.
In electroless unit 117a, substrate keeps its face down and is immersed in 80 ℃ the Co-W-P coating solution 2 minutes, thereby the active surface of interconnection is carried out selectable electroless (not having electric Co-W-P cap plating).After this, with cleaning fluid ultra-pure water clean substrate surfaces for example.Therefore interconnection-protective layer (cap coating layer) of being made up of the Co-W-P alloy film is formed on the surface of interconnection selectively.
After carrying out electroless, substrate sends roll-over unit 96b to by automatic conveyor 94c, by roll-over unit 96b upset substrate, makes it have facing up of device portions.And substrate sends cleaning module 91a (or 91b) by automatic conveyor 94b to from roll-over unit 96b.In cleaning module 91a, when cleaning fluid was supplied to substrate, PVA cavernous body (rotary broom) 29a and 29b (referring to Fig. 9 and 10) rotated with the scouring substrate, thereby remove particle that adheres to substrate surface or the like.The cleaning fluid that uses in this scrub process comprises surfactant.Because this cleaning fluid is supplied to substrate, so the hydrophobic surface of substrate presents hydrophily.Therefore, substrate surface can keep moisture state, thereby the surface is not exposed to air.
Subsequently, substrate sends irradiation modules 92a (or 92b) to by automatic conveyor 94b.Irradiation modules 92a handles by using rinsing liquid to carry out rinsing, then dry substrate.Particularly, when substrate with 50min
-1Speed rotation time, rinsing liquid is supplied to the upper surface of substrate with the flow velocity of 2.5L/min from rinsing liquid supply nozzle 40 (referring to Figure 12), thereby forms the film of rinsing liquid in the entire upper surface of substrate.At this moment, rinsing liquid also is supplied to the lower surface of substrate from rinsing liquid supply nozzle 41A with the flow velocity of 1.5L/min.Pure water, soda water, hydrogen water or Ozone Water can be used as rinsing liquid.
Before the rinsing processing finished, gas supply nozzle 13 and 14 (referring to Figure 12) moved on to the position of the above and below of substrate center part respectively, and began to discharge dry gas (for example nitrogen) when the rinsing processing finishes.In substrate supply dry gas, gas supply nozzle 13 and 14 is shifted to peripheral part from the core of substrate.Thereby remove on-chip rinsing liquid, thereby dry substrate.According to this dried, rinsing liquid can not become drop.And, owing to substrate rotates with the slow-speed of revolution, so prevent to produce the watermark that forms owing to the drop diffusion.After drying, substrate turns back to the box 93a of loading and unloading unit 89 by automatic conveyor 94a.Although above-mentioned electroless device has the structure of combination according to the substrate processing device of third embodiment of the invention, also the substrate processing device according to the 4th embodiment can be combined in this electroless device.
Substrate processing device according to fifth embodiment of the invention will be described below.Figure 18 is the plane graph that shows according to the substrate processing device of present embodiment.According to identical to substrate processing device shown in the 2B 1 of the basic layout of the substrate processing device 200 of present embodiment shown in Figure 180 and operation and Fig. 1, will the repetitive description thereof will be omitted.Shown in Figure 180 and substrate processing device 1 those identical parts are represented with identical Reference numeral.
Figure 19 illustrates substrate processing device shown in Figure 180 and cleans the front (upper surface) of substrate W and the mode of the back side (lower surface).As shown in figure 19, upper surface side washer jet (substrate processing unit) 12 is with the upper surface setting of predetermined height near substrate W.Upper surface side washer jet 12 is supported by the raising/lowering mechanism (not shown).Lower face side washer jet (substrate processing unit) 15 is equally with the lower surface setting of predetermined height near substrate W.Lower face side washer jet 15 is also supported by the raising/lowering mechanism (not shown).Equally in this substrate processing device, substrate W is by substrate holder 11 horizontal fixed that comprise several pressure rollers 20, thereby applies revolving force by 20 couples of substrate W of pressure roller.In Figure 19, upper surface side gas supply nozzle 13 and lower face side gas supply nozzle 14 are in the position of withdrawal respectively.After cleaning substrate W, upper surface side washer jet 12 upwards moves on to the position of withdrawal in the footpath of substrate W, and upper surface side gas supply nozzle 13 moves on to the position of the upper surface top of substrate W, then to substrate W supply dry gas with dry substrate W.Same, the position of the withdrawal of lower face side washer jet 15 below the footpath of substrate W upwards moves on to substrate W, and lower face side gas supply nozzle 14 moves on to the precalculated position, and to the lower surface supply dry gas of substrate W with dry substrate W.
Figure 20 A illustrates the concrete structure of washer jet to 20C.Washer jet 12 and 15 each have operating surface K1 (first operation part) and operating surface K2 (second operation part) at its lateral parts.Each of operating surface K1 and K2 has alternately and the fluid supply opening 227 and the fluid pump orifice 228 of linear arrangement.Shown in Figure 20 B and 20C, each fluid supply opening 227 is connected to shared supply pipe (service duct) 229, and each fluid pump orifice 228 is connected to shared discharge pipe (passing away) 230.By this structure, when fluid (for example liquid) when being supplied to supply pipe 229, from the surperficial accommodating fluid of corresponding fluid supply opening 227 to substrate W.Delivery pipe 230 is connected to vacuum source and is vacuumized by vacuum source, thereby has been fed to the fluid of substrate surface by corresponding fluid pump orifice 228 suctions.
In described embodiment, washer jet 12 and 15 each have two arrays, each array comprises several fluid supply openings 227 and fluid pump orifice 228.This structure makes each washer jet 12 and 15 can use two kinds of fluids.Washer jet 12 and 15 each have two supply pipes 229 and 229 and two delivery pipes 230 and 230.A pair of supply pipe 229 is connected respectively to fluid supply opening 227 and fluid pump orifice 228 with delivery pipe 230, and they are all at operating surface K1 opening.Similarly, another is connected respectively to fluid supply opening 227 and fluid pump orifice 228 to supply pipe 229 and delivery pipe 230, and they are all at operating surface K2 opening.Fluid supply opening 227 and fluid pump orifice 228 can irregularly be arranged, for example with fluid supply opening 227, fluid supply opening 227, fluid pump orifice 228, fluid supply opening 227, fluid supply opening 227, fluid pump orifice 228 ... sequence arrangement.
Shown in Figure 22 A, each fluid supply opening 227 should preferably separate the distance that equates with the surface of substrate W, and each fluid pump orifice 228 also should preferably separate the distance that equates with the surface of substrate W.By this layout, be positioned at fluid supply opening 227 accommodating fluids from all, therefore treatment substrate W equably from the position of substrate W same distance.And, be positioned at fluid pump orifice 228 suction fluids by all, so the suction force of all fluid pump orifices 228 can keep being equal to each other from the position of substrate W same distance.
Distance between fluid supply opening 227 tops and the substrate W surface preferably is not more than 2mm, more preferably no more than 0.5mm.Similarly, the distance between fluid pump orifice 228 tops and the substrate W surface preferably is not more than 2mm, more preferably no more than 0.5mm.In this case, the distance between the surface of distance between the surface of fluid supply opening 227 and substrate W and fluid pump orifice 228 and substrate W can be unequal mutually.Because fluid supply opening 227 and fluid pump orifice 228 are provided with near substrate W, thus be supplied to the fluid of substrate to be maintained fixed with respect to substrate W, and improve pumping efficiency.From the fluid of each fluid supply opening 227 supplies preferably in 1 to 30mL/min flow rates.If thereby the surface of supplying chemical liquid and substrate W reacts, be preferably 1 to 10mL/min flow rates from the chemical liquid of each fluid supply opening 227 supply so in, more preferably 1 in the flow rates of 5mL/min.For example, if will handle the wafer that diameter is 200mm, the flow rate of fluid of clean wafers one side surface use is about 30mL/min so.Owing to the amount of the fluid that is supplied to substrate is very little, so greatly suppressed the diffusion of fluid in processing procedure.And the amount that remains in the on-chip fluid of handling can be very little.In order to prevent that fluid pump orifice 228 from directly aspirating from the fluid of fluid supply opening 227 to substrate W supply, fluid supply opening 227 and fluid pump orifice 228 should preferably separate each other apart from " s ", and should be preferably from operating surface K1 (or K2) protrusion height " d " (referring to Figure 22 A).Distance " s " and height " d " all should be preferably 1mm at least.
According to washer jet (substrate processing unit) 12 and 15, fluid is provided for substrate W and remains static, and wherein fluid does not move with respect to substrate W.Thereby on surface that the liquid of supply is retained in regular hour and substrate W on the substrate W fully after the reaction, when washer jet 12 and 15 upwards moved back and forth in the footpath of substrate W, fluid pump orifice 228 moved and aspirates the fluid that reacts with substrate W surface.In other words, in the time of the substrate W accommodating fluid (liquid) of left-hand tools, fluid supply opening 227 upwards moves back and forth in the footpath of substrate W, makes the whole surface of substrate W be covered or printing by the basic fluid film uniformly of thickness.In this case, preferably reduce flow rate of fluid.Particularly, the flow velocity of fluid (liquid) preferably is not more than 5m/s, more preferably no more than 1m/s.The rotary speed of substrate W preferably is not more than 500min
-1, more preferably no more than 100min
- 1
Compare based in rotary substrate, cleaning substrate in the said method of the combination of fluid supply and suction and the common method, can significantly reduce the Fluid Volume of use to substrate center part accommodating fluid.Because fluid is fed to substrate W and aspirates from substrate W then, so prevent diffuse fluid.Because from substrate suction fluid, so on the whole surface of substrate, the amount and the thickness that remain in the fluid on the substrate W keep constant always.Therefore, can improve the stability and the uniformity of processing.
As mentioned above, washer jet 12 and 15 is to desired position accommodating fluid (liquid), and its mode makes that the fluid of supply is static at substrate W.This method and conventional method difference are, make the whole surperficial vertical spread of liquid at substrate by the high speed rotating substrate.In the present embodiment, preferably when treatment substrate W with about 100min
-1Low velocity rotary substrate W.Usually, thus in the conventional method of the disperse fluid on whole substrate to substrate center part accommodating fluid and rotary substrate, if substrate has the diameter of 200mm, must be with 500min
-1The speed rotary substrate and with the flow velocity of 0.5L/min at least a side surface accommodating fluid to substrate.On the contrary, according to present embodiment, because washer jet 12 and 15 repeatedly carries out the supply and the suction of fluid, so can clean substrate fully in order to the fluid of the flow velocity supply of about 30mL/min.
The cycle that the period ratio substrate W that requires washer jet 12 and 15 upwards to move back and forth in the footpath of substrate W rotates is longer.If the cycle that the cycle of substrate W rotation and washer jet 12 and 15 move back and forth is equal to each other, supply of the fixed position on substrate W so always and suction fluid, thus cause inhomogeneous processing.On the contrary, if the cycle of the period ratio substrate W that washer jet 12 and 15 moves back and forth rotation is longer, so for example, substrate W carries out several Zhou Xuanzhuan when washer jet 12 and 15 once moves back and forth.As a result, aspirate fluid with the shape (referring to Figure 22 B and 22D) of whirlpool to the substrate accommodating fluid with from substrate.On the other hand, if the cycle of the period ratio substrate W that washer jet 12 and 15 moves back and forth rotation is shorter, the track of fluid on substrate W becomes very complicated (referring to Figure 22 C) so.In the present embodiment, owing to just aspirating fluid,, therefore uniform processing can be arranged so fluid has the sufficient time to react from substrate W to substrate accommodating fluid regular hour later.
When fluid supply opening 227 and fluid pump orifice 228 moved back and forth, they should preferably stop to be no more than 0.5 second in end of travel.The preferred time that washer jet 12 (or 15) stops when end of travel is overturn of shortening as far as possible is because be supplied to the same section of substrate W at this time inner fluid.For example, if the cycle that washer jet 12 (or 15) moves back and forth is 5 seconds, washer jet 12 (or 15) should preferably stop to be no more than 0.5 second in end of travel so, more preferably no more than 0.1 second.
As shown in figure 21, the fluid supply opening 227 of washer jet 15 should preferably not comprise substrate W core W
OWith marginal portion W
EMoving range in radially removable along substrate W.If fluid supply opening 227 is shifted to core W
O, core W so
OThe Fluid Volume of supply is more than other zone of substrate W, and this is not preferred.Therefore, as shown in figure 21, preferably, the moving range of fluid supply opening 227 is set near core W
O, but do not comprise core W
OIf fluid is supplied to the marginal portion W of substrate W
E, fluid may be diffused into the outside of substrate W so.Therefore, the moving range of necessary limit fluid supply opening 227.
In the washer jet shown in Figure 20 A (substrate processing unit), several fluid supply openings 227 and fluid pump orifice 228 are with linear arrangement uniformly-spaced.But, even fluid supply opening 227 and fluid pump orifice 228 also can be realized above-mentioned cleaning function not with linear arrangement uniformly-spaced.In the present embodiment, washer jet 12 and 15 each have two operating surface K1 and K2, each operating surface has several fluid supply openings 227 and fluid pump orifice 228.But, can in one of operating surface K1 and K2, be provided for the fluid supply opening and the fluid pump orifice of particular type fluid, and only be provided for the fluid supply opening of other type of fluid in operating surface K1 and K2 another.The quantity of operating surface is not limited to two.Particularly, three, four or more a plurality of operating surface can be set, each operating surface all has several fluid supply openings and fluid pump orifice.And washer jet 12 and 15 can have polygon or circular shape of cross section, perhaps can be the structure with two or more manipulating nozzles groups.Shown in Figure 20 B and 20C, washer jet 12 and 15 can also have the polygon and the circular cross sectional shape of combination.
Shown in Figure 20 A, a plurality of fluid supply openings 227 are set preferably.In this case, preferred control is from the flow rate of fluid of each fluid supply opening 227 supplies.Particularly, preferably adjust the aperture of fluid supply opening 227, make the flow rate of fluid of each fluid supply opening 227 supplies improve gradually to perimeter sides from the central side of substrate W.Because washer jet is to the substrate accommodating fluid of rotation, thus from the central side of substrate to perimeter sides, the unit interval is wanted the surface area increasing of accommodating fluid.Therefore, to perimeter sides, must improve from the flow rate of fluid of fluid supply opening supply from the central side of substrate, thus the long-pending increasing of matching surface.By improving flow velocity to perimeter sides, can on the whole surface of substrate, provide fluid equably from the substrate center side.
Preferably, be provided for monitoring from the device of the flow rate of fluid of at least one fluid supply opening 227 supplies.For example, by measuring the supply pressure of fluid,, can calculate from the flow rate and the flow velocity of the fluid of each fluid supply opening 227 supplies according to the aperture or the size of fluid supply opening 227.And the supply pressure by the control fluid reaches predetermined flow rate and flow velocity, can improve the fluid for example flow velocity of cleaning fluid and the accuracy of flow rate.In addition, this substrate processing device should preferably have the temperature controller that is used for warm and/or cooling fluid.Under some situation, the substrate disposal ability of fluid may depend on the temperature of fluid.In this case, the temperature of fluid should preferably be adjusted into suitable value.Temperature controller can be included in heater or the cooling unit that is provided with on the pipe that is used for accommodating fluid.
On the other hand, each fluid pump orifice 228 also has and can regulate its conductive structure (its shape and size).Fluid pump orifice 228 is communicated with shared vacuum source or a plurality of vacuum source respectively, make fluid pump orifice 228 adjusted under certain swabbing pressure of predetermined value the suction process fluid.In this case, each aperture by fluid pump orifice 228 is set to desired value, can change the flow rate by the fluid of each fluid pump orifice 228 suctions.In case be provided with the aperture of each fluid pump orifice 228, just can change flow rate (flow velocity) by the suction force that changes vacuum source by the fluid of its suction.Preferably, with respect to the same radial position of substrate W, the flow rate of the fluid by 228 suctions of each fluid pump orifice is less than the flow rate from the fluid of each fluid supply opening 227 supply.Also preferably make the flow rate of the fluid that aspirates by each fluid pump orifice 228 equate that perhaps the central side from substrate W reduces these flow rates gradually to perimeter sides.In other words, whole surface for the uniform treatment substrate, the preferred film that always on the whole surface of substrate, forms treat liquid with homogeneous thickness, and by supply and suction process liquid and in each zone of substrate surface with uniform replacing velocity with new treat liquid replacement Treatment liquid.
Substrate processing device can also have the device that is used for according to the processing of treatment conditions control substrates (wafer).The example of these treatment conditions comprises the upper and lower surface of rotary speed, substrate of substrate and the distance between washer jet 12 and 15, cycle, average speed and maximum speed that washer jet 12 and 15 moves back and forth, with pressure and temperature, the vacuum degree of vacuum source and the type of fluid (liquid) of the fluid of supply.These treatment conditions are provided with according to the type of type of substrate or the film that forms on substrate surface.In treatment substrate, monitoring is corresponding to the measured value of these treatment conditions.The preset data of these measured values and treatment conditions compares, and the processing of control substrate, makes that measured value keeps equating with preset data.
Substrate processing device can have that washer jet 15 wherein is arranged on the substrate below and the inclined-plane washer jet is arranged on the layout on the chamfered portion (peripheral part) of substrate.By this layout, in inclined-plane washer jet treatment substrate W upper surface side chamfered portion, can use the lower surface of washer jet 15 cleanings or etch substrate W.Selectively, substrate processing device has that washer jet 12 wherein is arranged on the substrate top and the inclined-plane washer jet is arranged on the layout of chamfered portion (peripheral part) below of substrate W with the lower face side chamfered portion of treatment substrate.
The preferred substrate processing unit has the fluid (liquid) that is used to reclaim by 228 suctions of fluid pump orifice and also utilizes the unit that reclaims fluid again.For example, can be recovered in the returnable, and can after filtering fluid, turn back in the fluid supply container of substrate processing device with the fluid of crossing.Also thereby the preferred substrate processing unit has to be used to regenerate and reclaims the unit that fluid utilizes this fluid again.Substrate processing device can also have to be used for monitoring and reclaims or the concentration of regenerative fluid or the unit of the impurity concentration that fluid comprises.
Figure 23 and Figure 24 schematically show the substrate processing device according to sixth embodiment of the invention.Figure 25 illustrates the system layout according to the substrate processing device of sixth embodiment of the invention.Substrate processing device 200 ' has basic structure same as the previously described embodiments.Particularly, substrate processing device 200 ' comprises substrate holder 11a, 11b, 11c and 11d (it comprises the pressure roller 20 that is used for fixing with rotary substrate W), is used for the fixture suction nozzle 24 (24a, 24b, 24c and 24d) of suction process liquid and is used for fixture washer jet 26 (26a, 26b, 26c and 26d) to the retained part 21 supply cleaning fluids of pressure roller 20.But, in the present embodiment, have only washer jet 15 to be arranged on substrate W below, but and the purification plate 238 of level and vertical moving be arranged on the top of substrate W.Purification plate 238 has at least one opening (not shown), is used for to substrate W supplying inert gas (for example nitrogen), thereby prevents pollution or the infringement of the moisture of the fluid (liquid) that produces at substrate W lower surface or chemical liquid atmosphere to the surface of substrate.Purification plate 238 can only have an opening in the position corresponding to substrate W core, perhaps can have with the spaced radial that equates to be arranged on a plurality of openings on a plurality of circles of arranging with one heart with substrate W.
Substrate processing device 200 ' also comprises with inclined-plane washer jet (the peripheral cleaning unit) 236 of cleaning fluid cleaning substrate W upper surface side peripheral part (chamfered portion) and the inclined-plane suction nozzle (peripheral pump unit) 237 of suck purge liquid.Inclined-plane washer jet 236 is adjacent to be provided with inclined-plane suction nozzle 237, and is located at the place ahead of substrate W direction of rotation ramp suction nozzle 237.Therefore, the cleaning fluid from 236 supplies of inclined-plane washer jet was aspirated by inclined-plane suction nozzle 237 before substrate W once rotates in a direction indicated by the arrow immediately.Therefore, substrate processing device 200 ' can clean the lower surface of substrate W and the chamfered portion of processing (for example cleaning) substrate W upper surface side.Substrate processing device 200 ' all right etch substrate W cleans substrate W with inclined-plane washer jet 236 and inclined-plane suction nozzle 237 then.Inclined-plane washer jet 236 and inclined-plane suction nozzle 237 can upwards move in the footpath of substrate W by motor M respectively, thereby adjust their position in the chamfered portion of treatment substrate W.Inclined-plane washer jet 236 and inclined-plane suction nozzle 237 can move back and forth between the core of substrate W and peripheral part, thus the whole surface of treatment substrate W.Purification plate 238 has circle roughly, makes not covering substrate W marginal portion and not contacting with inclined-plane suction nozzle 237 with inclined-plane washer jet 236 of purification plate 238.
In substrate processing device 200 ', as shown in figure 25, liquid for example chemical liquid is discharged into washer jet 15 from liquid toilet-cleaning jar 231, and the fluid supply opening 227 (referring to Figure 20 A) from washer jet 15 is fed on the surface of substrate W then.Washer jet 15 is shown in as arrow among Figure 25 by transmission mechanism 240 and moves back and forth on the horizontal plane, and reclaims the chemical liquid that is supplied to substrate W by fluid pump orifice 228 (referring to Figure 20 A).The chemical liquid that reclaims by fluid pump orifice 228 is discharged into the recycling can (knockout drum) 232 that gas and chemical liquid are separated from each other.Chemical liquid separately is discharged in the circulating tank 233 then.
The chemical liquid of using that is stored in the circulating tank 233 pressurizes, filters, regulates temperature by temperature controller 235 by filter 234 by pump P, turns back to liquid toilet-cleaning jar 231 as recycling chemical liquid then.Like this, chemical liquid is recycled and is used for utilizing again, and can reduce the amount of the chemical liquid that is used to handle.Aspirated by inclined-plane suction nozzle 237 from the chemical liquid of inclined-plane washer jet 236 supplies, and can utilize again in the same manner as described above.Although do not illustrate, substrate processing device 200 ' has the unit of the chemical liquid of using that turns back to circulating tank 233 of being used to regenerate, thus the chemical liquid that utilizes this usefulness to cross again.
Figure 26 is the schematic plan view in conjunction with the substrate handling system of Figure 18 or substrate processing device shown in Figure 23.The element of substrate handling system 271 shown in Figure 26 is identical with operation and substrate handling system 71 shown in Figure 11.Substrate handling system 271 and substrate handling system 71 those identical elements are represented with identical Reference numeral, and following no longer explanation.In this system, Etaching device 82 can constitute to have and substrate processing device 200 or 200 ' identical structure equally, and washer jet 12 and 15 can supply the etching solution that is used for etch substrate, rather than the supply cleaning fluid.Selectively, substrate processing device 200 (or 200 ') can carry out etch processes, clean and dried under the situation that Etaching device 82 is not set.Etaching device 82 can replace with substrate processing device 200 (or 200 '), thereby makes two substrate processing devices 200 (or 200 ') carry out etch processes, clean and dried simultaneously.
In substrate handling system 271, Etaching device 82 and plater 84 can replace in order to lower device: the inclined-plane Etaching device that is used for the chamfered portion of etch substrate; The polishing inclined plane device that is used for the chamfered portion of polishing substrate; Be used for coating layer or similar layer of electrobrightening device that carries out electrobrightening; Perhaps be used for substrate surface is carried out the CMP device of chemico-mechanical polishing.Selectively, Etaching device 82 and plater 84 can replace with substrate processing device 200 (or 200 ') respectively, so substrate handling system 271 has three substrate processing devices 200 that are used for carrying out simultaneously etch processes and/or clean and dried.
Below, will illustrate with reference to the accompanying drawings according to substrate holding apparatus of the present invention.
Figure 27 is the plane graph of schematically illustrated substrate holding apparatus according to seventh embodiment of the invention.Figure 28 is the cross-sectional view of the line XXVIII-XXVIII intercepting in Figure 27.In this embodiment, semiconductor wafer is as substrate.
As shown in figure 27, substrate holding apparatus has four pressure roller 301a, 301b, 301c and 301d (being referred to as pressure roller 301), is used for horizontal fixed and rotation semiconductor wafer W.Pressure roller 301 can move on the direction that the upwardly extending guide rail 302a in semiconductor wafer W footpath, 302b, 302c and 302d limit.Particularly, shown in the arrow among Figure 27, each pressure roller 301 can upwards move towards the center C of semiconductor wafer W in the footpath of semiconductor wafer W.Inflator 303a, 303b, 303c and 303d (being referred to as inflator 303) as travel mechanism are connected to each pressure roller 301, the mobile pressure roller 301 that is used for making progress in the footpath of semiconductor wafer W, thus make pressure roller 301 contact or disengage with the marginal portion of semiconductor wafer W.The pressure roller 301 equal distance that on the circumferencial direction of semiconductor wafer W, separates each other.Pressure roller 301 is connected to the motor (not shown) as drive source.When starter, each pressure roller 301 is rotation synchronously on identical direction.
Shown in Figure 27 and 28, substrate holding apparatus has brake 304a and 304b, be used for stopping with half pressure roller 301a that contacts of the semiconductor wafer W of being divided and moving of 301b by centre line C L.In Figure 28, brake 304a only is shown.Pressure roller 301a and 301b move towards the center C of semiconductor wafer W, up to pressure roller 301a is contacted with 304b with brake 304a with 301b under first pressure that inflator 303a and 303b apply.Pressure roller 301a and 301b are fixed in advance by brake 304a and the given precalculated position of 304b.On the other hand, be positioned at semiconductor wafer W second half pressure roller 301c and 301d apply from inflator 303c and 303d, than first pressure under littler second pressure, move towards the center C of semiconductor wafer W, to moving without limits of they.
Figure 29 is the amplification cross-sectional view that shows the major part of pressure roller shown in Figure 28;
As shown in figure 29, pressure roller 301a has groove shape retained part 305, and retained part 305 is positioned near its upper end and along the circumferential surface of pressure roller 301a and extends.Retained part 305 has the flat 305a that is positioned at the center and is positioned near two sweep 305b of upper and lower end of flat 305a, and the cross sectional shape of whole archwise.By this structure, when semiconductor wafer W moves, make flat 305a closely contact at pressure roller 301a with the marginal portion of semiconductor wafer W, its state makes the peripheral part of retained part 395 holding semiconductor wafer W.The peripheral part of semiconductor wafer W is to being positioned at the zone of the radially inside 0.1mm in marginal portion to the part of a few mm distances from the semiconductor wafer W marginal portion.Although do not illustrate, pressure roller 301b, 301c are the same with pressure roller 301a with 301d to have retained part 305, and semiconductor wafer W is fixed by pressure roller 301a, 301b, 301c and 301d at these retained part 305 places.Pressure roller 301 is of similar shape and structure each other.Pressure roller 301 is made by having chemical-resistant fluororesin (for example PVDF or PEEK), is perhaps made by polyurethane.
The width of retained part 305 (longitudinal length) E is not more than the twice of the thickness T of semiconductor wafer W.Particularly, if semiconductor wafer W has the diameter of 200mm and the thickness of 0.75mm, the width E of retained part 305 is set to be not more than 1.5mm so.The width of flat 305a (longitudinal length) F is not more than half of thickness T of semiconductor wafer W.By this structure, be limited in the position of flat 305a by sweep 305b by retained part 305 fixing semiconductor wafer W.Therefore, semiconductor wafer W can be rotated, and its posture keeps substantial constant simultaneously.
Substrate holding apparatus has the height adjustment mechanism (not shown) that is used to regulate each pressure roller 301 height and is used to regulate the adjustment for angle of inclination (not shown) of the inclination of each pressure roller 301.Height adjustment mechanism can make the retained part 305 of all pressure rollers 301 remain parallel to each other with adjustment for angle of inclination and be positioned at identical horizontal plane.
The operation of the substrate holding apparatus that constitutes like this will be described below.
When semiconductor wafer W was incorporated in the substrate holding apparatus by automatic conveyor or similar device, four pressure rollers 301 moved towards the center C of semiconductor wafer W.Pressure roller 301a closely contacts with 304b with brake 304a respectively with 301b, and thereby stop to move of they, thereby make pressure roller 301a and 301b fix in position.On the other hand, pressure roller 301c closely contacts with the marginal portion of semiconductor wafer W with 301d, for example is less than or equal under the pressure (second pressure) of 20N in predetermined pressure then, pushes semiconductor wafer W towards the center C of semiconductor wafer W.Like this, the retained part 305 of four pressure rollers 301 (flat 305a) keeps closely contacting with the marginal portion of semiconductor wafer W, thereby by pressure roller 301 fixing semiconductor wafer W tightly.When semiconductor wafer W is fixed by pressure roller 301 like this, start several motors and on identical direction, rotate pressure roller 301 synchronously, thus the rotation semiconductor wafer W.
For the position that makes semiconductor wafer W by pressure roller 301 keeps constant, must be with the fixing position of pressure roller 301a and 301b of brake 304a and 304b.Same necessary is, applied second pressure ratio of pushing pressure roller 301c and 301d to apply first pressure of pushing pressure roller 301a and 301b by inflator 303a and 303b littler by inflator 303c and 303d.Particularly, in the present embodiment, it is littler to be used to push first pressure that keeps being used to push with second pressure ratio of half the pressure roller 301c that contacts of the semiconductor wafer W of being divided by centre line C L and 301d second half the pressure roller 301a that contacts of maintenance and semiconductor wafer W and 301b.By this set, pressure roller 301c and 301d can push semiconductor wafer W by keeping closely contacting with brake 304a and 340b when locating at pressure roller 301a and 301b.Therefore, the pivot of semiconductor wafer W can be maintained at constant position.
And according to present embodiment, the direction that acts on the power on the semiconductor wafer W from pressure roller 301 can concentrate on the center C of semiconductor wafer W.Under this state, because each pressure roller 301 is with on the predetermined circumferencial direction that is disposed on semiconductor wafer W, so act on the vanishing basically of making a concerted effort of the center C of semiconductor wafer W from pressure roller 301.The change in location that therefore, can suppress the semiconductor wafer W pivot.Because the width E of retained part 305 is set to be not more than the twice of the thickness T of semiconductor wafer W, and each retained part 305 comprises flat 305a and sweep 305b, so semiconductor wafer W keeps contacting on substantially invariable position each other with retained part 305, thereby prevents that semiconductor wafer W from vertically moving.Therefore, can prevent that semiconductor wafer W from having big fluctuation or inclination when rotated.Therefore can improve the rotation accuracy of semiconductor wafer W according to the substrate holding apparatus of present embodiment.
In the present embodiment, pressure roller 301c and the 301d pressure of pushing semiconductor wafer W is set to be not more than 20N.But this pressure should preferably be regulated according to the size and the mounted pressure roller quantity of semiconductor wafer W.Although the substrate holding apparatus of present embodiment has four pressure rollers 301, at least three pressure rollers can be set in substrate holding apparatus.Distance between the contact point that adjacent two pressure rollers 301 keep with semiconductor wafer W contacts is set to the diameter less than semiconductor wafer W.For example, have at substrate holding apparatus under the situation of three pressure rollers, these pressure rollers are arranged so that each diameter less than semiconductor wafer W of the distance between the contact point that three pressure rollers keep with the semiconductor wafer W marginal portion contacts.In this case, three pressure rollers should be preferably in the rotation semiconductor wafer W, in the heart is pushed semiconductor wafer among the semiconductor wafer under predetermined pressure or the littler pressure marginal portion.By pushing semiconductor wafer with at least three pressure rollers like this under predetermined pressure or littler pressure, the power that acts on semiconductor wafer from pressure roller can be little, keeps required rotation accuracy simultaneously.Because pressure roller pushes semiconductor wafer towards the center of semiconductor wafer, and at semi-conductive center, from pressure roller act on semiconductor wafer to make a concerted effort be zero, therefore needn't on the circumferencial direction of semiconductor wafer, pressure roller be set with the interval that equates.
Below with the cleaning device of description taken in conjunction according to the substrate holding apparatus of the 7th embodiment.Figure 30 shows the cleaning device be used to remove the particle that has adhered to semiconductor wafer surface, and shows the end view of the mode on the upper and lower surface of cleaning semiconductor wafer W.Figure 31 A is the enlarged drawing that shows washer jet shown in Figure 30.Figure 31 B is the cross-sectional view along the line XXXIb-XXXIb intercepting of Figure 31 A.Figure 31 C is the cross-sectional view along the line XXXIc-XXXIc intercepting of Figure 31 A.The structure of cleaning device shown in Figure 30 is identical with operation with the structure of cleaning device shown in Figure 19 with operation.Those identical with cleaning device shown in Figure 19 in the cleaning device shown in Figure 30 parts are represented with identical Reference numeral, and below will no longer be illustrated.Figure 31 A is identical structure with Figure 20 A to the washer jet shown in the 20C with 15 to the washer jet shown in the 30C 12, below with no longer repeat specification.
Cleaning device shown in Figure 30 has substrate holding apparatus shown in Figure 27, and has inflator and the guide rail (not shown) that is used to make pressure roller 301 upwards to move in the footpath of semiconductor wafer W.In this cleaning device, fluid supply opening 227 is to semiconductor wafer W supply cleaning fluid, and 228 suctions of fluid pump orifice have been supplied to the cleaning fluid of semiconductor wafer W.Washer jet 12 and 15 upwards moves back and forth in the footpath of semiconductor wafer W, and carries out the supply and the suction of cleaning fluid, thereby cleans semiconductor wafer W.The clean of carrying out suppresses cleaning fluid effectively and spreads from semiconductor wafer W like this, and makes the amount of cleaning fluid residual on the semiconductor wafer W of handling minimum.
Figure 32 A is the plane graph of demonstration in conjunction with another example of the cleaning device of substrate holding apparatus shown in Figure 27.Figure 32 B is the end view of cleaning device shown in Figure 32 A.The structure of this example is identical with operation with the structure of cleaning device shown in Figure 23 and 24 with operation, and no longer explanation, and identical structural detail is below represented with identical Reference numeral, will no longer illustrate below.
In this cleaning device, have only washer jet 15 to be arranged on the below of semiconductor wafer W, but and level and the purification plate 238 that vertically moves are arranged on the semiconductor wafer W top.Purification plate 238 has at least one opening (not shown), be used for to semiconductor wafer W supplying inert gas (for example nitrogen), thereby prevent the device area that the moisture contamination of the cleaning fluid that produces at the semiconductor wafer W lower surface or chemical liquid atmosphere forms on the semiconductor wafer W surface.Purification plate 238 can only have an opening in the position corresponding to the semiconductor wafer W center, perhaps have a plurality of openings that are arranged on a plurality of annulus of arranging with one heart with semiconductor wafer W.
Substrate processing device also has the inclined-plane washer jet 236 of peripheral part (chamfered portion) the supply cleaning fluid that is used for to semiconductor wafer W and is used for the inclined-plane suction nozzle 237 of suck purge liquid.Inclined-plane washer jet 236 and inclined-plane suction nozzle 237 upwards move in the footpath of semiconductor wafer W by the motor (not shown), thereby can adjust their processing position.By this structure, the cleaning fluid of supplying from inclined-plane washer jet 236 was just aspirated by inclined-plane suction nozzle 237 before semiconductor wafer W is once rotated by the direction shown in the arrow immediately.Cleaning device shown in Figure 32 A and the 32B can clean the lower surface of semiconductor wafer W and clean the upper surface side chamfered portion of semiconductor wafer W.This cleaning device can also improve the rotation accuracy of semiconductor wafer W, because this cleaning device has the substrate holding apparatus according to the foregoing description.Therefore, prevent that inclined-plane washer jet 236 from contacting with semiconductor wafer W with inclined-plane suction nozzle 237.And it is constant that the relative position between inclined-plane washer jet 236 and the semiconductor wafer W can keep, and therefore can accurately regulate the zone that will supply cleaning fluid.
Above-mentioned cleaning device can utilize inclined-plane washer jet 236 and inclined-plane suction nozzle 237 and semiconductor wafer W is carried out etch processes or other processing, can carry out clean then.Inclined-plane washer jet 236 and inclined-plane suction nozzle 237 can directly upwards move back and forth in semiconductor wafer W, thus the whole surface of process semiconductor wafers W.Under the situation of carrying out the inclined-plane etch processes, by changing the cross section size of retained part 305, can be adjusted in the amount of the etching solution that keeps in the retained part (referring to Figure 29), therefore can control and want etched zone.
Figure 33 A is the amplification view of one of pressure roller shown in Figure 32 A, and Figure 33 B is the cross-sectional view of pressure roller shown in Figure 33 A.The structure of Figure 33 A and washer jet of fixture shown in the 33B and fixture suction nozzle is identical with operation with the structure of fixture washer jet shown in Fig. 2 A and the 2B and fixture suction nozzle with operation.Same parts is represented with identical Reference numeral, and following no longer detailed description.
In Figure 33 A and 33B, pressure roller 301a rotates on the direction shown in the arrow, and the supply opening 25 of fixture washer jet 26 is to retained part 305 supply cleaning fluids, thereby cleans the retained part 305 that has adhered to treat liquid.When pressure roller 301a rotated, the treat liquid of being handled by cleaning fluid arrived pump orifice 23 fronts of fixture suction nozzle 24, the device suction nozzle that is fixed then 24 suctions.Like this, owing to supply cleaning fluids to retained part 305 partly, spread from pressure roller 301a (retained part 305) so prevent cleaning fluid from fixture washer jet 26.And, because fixture washer jet 26 and fixture suction nozzle 24 can remain unchanged with respect to the relative position of pressure roller 301a, can stably carry out the supply and the suction of cleaning fluid.
Below, will be with reference to the back etched device of Figure 34 description taken in conjunction according to the substrate holding apparatus of seventh embodiment of the invention.Figure 34 schematically shows the amplification cross-sectional view of combination according to the major part of the back etched device of the substrate holding apparatus of seventh embodiment of the invention.
As shown in figure 34, film 310 is formed on the surface of semiconductor wafer W.Etching solution supply nozzle 311 is arranged on the below of semiconductor wafer W, is used for to the lower surface supply of the semiconductor wafer W etching solution as treat liquid.In shown embodiment, the depth D of retained part 305 is not more than 1mm.
Semiconductor wafer W is fixing by pressure roller 301 (pressure roller 301a only is shown among Figure 34), its state make film 301 the surface down.When semiconductor wafer W is by pressure roller 301 rotations, from lower surface (back side) the supply etching solution of etching solution supply nozzle 311 to semiconductor wafer W.Be supplied to the etching solution of semiconductor wafer W lower surface when semiconductor wafer W is rotated, to arrive the lower face side peripheral part.Therefore, the film 310 etched liquid that form on the semiconductor wafer W lower surface are removed.Part etching solution enters the upper surface of semiconductor wafer W by retained part 305, and the peripheral part of semiconductor wafer W upper surface is exposed to etching solution.
In the present embodiment, because the depth D of retained part 305 is not more than 1mm, so the interval between the retained part 305 of semiconductor wafer W peripheral part and pressure roller 301a can further reduce.Therefore, the amount of filling the etching solution at above-mentioned interval reduces, and the amount that flows to the etching solution of upper surface from the semiconductor wafer W lower surface also reduces.And, because the depth D of retained part 305 is set to be not more than 1mm, thus from the semiconductor wafer W marginal portion to being positioned at the radially inside finite region of the scope of the part of 2mm at most of marginal portion, semiconductor wafer W is exposed to etching solution.Therefore, can prevent that etching solution from entering the zone that forms circuit (device) on semiconductor wafer W.In addition, reduce owing to fill the amount of the etching solution at above-mentioned interval, so also can reduce the amount of the etching solution that when semiconductor wafer W is rotated, spreads around.
According to the substrate holding apparatus of present embodiment can be applied to physics or chemical mode remove the particle that adheres to semiconductor wafer surface cleaning device, remove the film that on semiconductor wafer peripheral part and lower surface, forms for example metal film Etaching device and to semiconductor wafer surface supplying inert gas or dehumidification air drying device with drying of semiconductor wafers.Can improve the rotation accuracy of semiconductor wafer (being substrate) according to substrate holding apparatus of the present invention, therefore can carry out various processing, and near the ozzle not making semiconductor wafer and being arranged on semiconductor wafer contacts semiconductor wafer.
Below with reference to Figure 35 A and the 35B explanation eighth embodiment of the present invention.Figure 35 A is the plane graph that schematically shows according to the substrate holding apparatus of eighth embodiment of the invention, and Figure 35 B is the schematic diagram of demonstration along the part cross section of the line XXXV-XXXV intercepting of Figure 35 A.According to the structure of the substrate holding apparatus of the 8th embodiment and operation with according to the structure of the substrate holding apparatus of the 7th embodiment with operate identically, below components identical will be described.The difference that the 8th embodiment is different from the 7th embodiment mainly is, uses four inflators at the 7th embodiment, uses two inflators in the 8th embodiment.
Shown in Figure 35 A, pressure roller 301a, 301b, 301c and 301d are installed in respectively and install on substrate 306a, 306b, 306c and the 306d.Substrate 306a is installed is arranged on two closed slide 302a and the 302a, make the mobile footpath that is limited in semiconductor wafer W that substrate 306a and pressure roller 301a are installed make progress.As substrate 306a is installed, substrate 306b, 306c and 306d are installed are separately positioned on closed slide 302b and 302b, closed slide 302c and 302c and closed slide 302d and the 302d, make the mobile footpath that is limited in semiconductor wafer W that substrate 306b, 306c and 306d and pressure roller 301b, 301c and 301d are installed make progress.
Carrier bar 307a and 307b are separately positioned between installation substrate 306a and the 306b and install between substrate 306c and the 306d.Carrier bar 307a and 307b are coupled to inflator 303a and 303b respectively, inflator 303a and 303b make progress in the footpath of semiconductor wafer W mobile carrier bar 307a and 307b.Carrier bar 307a is coupled to installation substrate 306a by cam follower 308a and the cam follower recipient 309a that is engaged with each other, and is coupled to installation substrate 306b by cam follower 308b and the cam follower recipient 309b that is engaged with each other.Particularly, shown in Figure 35 B, cam follower recipient 309b is on the direction perpendicular to the page of Figure 35 B, promptly perpendicular to side's upwardly extending groove shape guiding parts of carrier bar 307a moving direction.When inflator 303a when semiconductor wafer W moves carrier bar 307a, cam follower 308b slides along cam follower recipient 309b, thereby pressure roller 301b position shown in the two point dotted line from Figure 35 B moves on to the position shown in the solid line, thus fixing semiconductor wafer W.307a is the same with carrier bar, carrier bar 307b is coupled to installation substrate 306c by cam follower 308c and the cam follower recipient 309c that is engaged with each other, and is coupled to installation substrate 306d by cam follower 308d and the cam follower recipient 309d that is engaged with each other.
When carrier bar 307a and 307b are moved by inflator 303a and 303b respectively, pressure roller 301a, 301b, 301c and 301d and substrate 306a, 306b, 306c and 306d are installed upwards move in the footpath of semiconductor wafer W towards the center C of semiconductor wafer W.Moving of substrate 306a and 306b is installed stopped at preposition, thereby pressure roller 301a and 301b are fixed and put in place by corresponding actuator 304a and 304b.On the other hand, installation substrate 306c and 306d move towards the center C of semiconductor wafer W, and are not moved by any brake restriction.Identical with the 7th embodiment, four pressure rollers 301 that the marginal portion of semiconductor wafer W is arranged in the interval that equates on the circumferencial direction of semiconductor wafer W are fixing, the therefore vanishing of making a concerted effort of the center C effect from pressure roller 301 towards semiconductor wafer W.Therefore, by the rotation of pressure roller 301, semiconductor wafer W can be rotated with height rotation accuracy.
Below with reference to the substrate holding apparatus of Figure 36 explanation according to ninth embodiment of the invention.
Figure 36 is the amplification cross-sectional view of demonstration according to the major part of the pressure roller of the substrate holding apparatus of ninth embodiment of the invention.According to the structure of the substrate holding apparatus of the 9th embodiment and operation with according to the structure of the substrate holding apparatus of the 7th or the 8th embodiment with operate identically, will no longer illustrate below.
As shown in figure 36, two of retained part 305 sweep 305b and and the circumferential surface of pressure roller 301a smoothly and continuously be connected to each other.Particularly, accurately extend the coupling part between the circumferential surface of sweep 305b and pressure roller 301a.Therefore, between the circumferential surface of sweep 305b and pressure roller 301a, do not have the border, thereby be not formed on the angled portion of extending on the pressure roller 301a circumferencial direction.If have angled portion on the circumferential surface of pressure roller 301a, when pressure roller 301a rotated, treat liquid tended to spread towards periphery from angled portion so.According to present embodiment,, spread apart so prevent treat liquid because the circumferential surface of two sweep 305b and pressure roller 301a smoothly and continuously is connected each other.Equally in this embodiment, the interval that forms between semiconductor wafer W peripheral part and two sweep 305b preferably should be little.Although identical with the 7th embodiment, in the present embodiment, retained part 305 comprises flat 305a, also can omit flat 305a.
Although the preferred embodiments of the present invention have been described above, the present invention is not limited to the foregoing description, but can realize with various forms in the scope of its know-why.The present invention is not limited to described embodiment, but can carry out various variations without departing from the present invention therein.
Industrial applicibility
The present invention is applicable to and carries out chemical liquid treatment, cleaning treatment, dry processing or similar Processing, the simultaneously substrate processing of rotary substrate (for example semiconductor wafer or liquid crystal substrate) fill Put and processing method for substrate. The present invention also is applicable to fixing and rotary substrate (semiconductor for example Wafer) substrate holding apparatus.
Claims (15)
1, a kind of substrate processing device is used for treatment substrate and provides fluid to this substrate simultaneously, and described substrate processing device comprises:
Substrate holder, each substrate holder all has the pressure roller that is used for fixing and rotates this substrate;
The fixture cleaning unit, each fixture cleaning unit all has the supply mouth that is used for cleaning fluid is fed to described pressure roller; And
The fixture pump unit, each fixture pump unit all has the suction nozzle with battery unit that is used for aspirating from described pressure roller described cleaning fluid,
Wherein said pressure roller has retained part on its periphery surface, described retained part is contacted with the marginal portion of this substrate,
Described supply mouth and described suction nozzle with battery unit are positioned adjacent to described retained part, and
Described suction nozzle with battery unit is disposed in the place ahead of described supply mouth along the direction of rotation of described pressure roller.
2, according to the substrate processing device of claim 1, also comprise peripheral pump unit, be used for peripheral part suction fluid from this substrate.
3, according to the substrate processing device of claim 1 or 2, wherein, described pressure roller contacts with this substrate, thereby by utilizing frictional force between described pressure roller and this substrate to fix and rotating this substrate.
4, according to the substrate processing device of claim 1, wherein, described fixture pump unit is communicated with vacuum source.
5,, comprise that also at least one has the gas supply nozzle of gas supply opening, provides dry gas by this gas supply opening to this substrate according to the substrate processing device of claim 1.
6, according to the substrate processing device of claim 5, wherein, this dry gas is perpendicular to the surface supply of this substrate.
7, according to the substrate processing device of claim 1, also comprise:
Gas supply unit, this gas supply unit have a plurality of gas supply nozzles, are used for to the surface of the fixing substrate of described substrate holder supply dry gas;
The gas supply of wherein said gas supply nozzle begins regularly and gas supply stop timing is provided with independently.
8, according to the substrate processing device of claim 1, also comprise:
Gas supply unit, this gas supply unit have a plurality of gas supply nozzles, are used for to the surface of the fixing substrate of described substrate holder supply dry gas;
Wherein the flow velocity from the dry gas of described gas supply nozzle supply is provided with independently.
9, according to the substrate processing device of claim 5, wherein, when this substrate provides this dry gas, described gas supply nozzle moves between the core of this substrate and peripheral part.
10, according to the substrate processing device of claim 9, wherein, the translational speed of described gas supply nozzle changes according to the relative position of described gas supply nozzle and this substrate.
11, according to the substrate processing device of claim 9, wherein, before described gas supply opening arrives the marginal portion of this substrate, this dry gas of described gas supply nozzle stop supplies.
12,, wherein, will control from the flow velocity of the dry gas of described gas supply nozzle supply from the pressure of the dry gas of described gas supply nozzle supply by changing according to the substrate processing device of claim 5.
13, according to the substrate processing device of claim 1, also comprise:
The rinsing liquid supply nozzle is used for rinsing liquid is fed to the surface of this substrate,
Wherein when this rinsing liquid was provided for substrate, described fixture pump unit did not aspirate this rinsing liquid, thereby formed the film of this rinsing liquid on the surface of this substrate.
14, according to the substrate processing device of claim 1, wherein, each described fixture pump unit all has the current-carrying part of being made by electric conducting material, and described current-carrying part ground connection.
15, according to the substrate processing device of claim 2, wherein, described peripheral pump unit has the current-carrying part of being made by electric conducting material, and described current-carrying part ground connection.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003289442 | 2003-08-07 | ||
| JP289443/2003 | 2003-08-07 | ||
| JP289442/2003 | 2003-08-07 | ||
| JP317395/2003 | 2003-09-09 | ||
| JP003654/2004 | 2004-01-09 | ||
| JP114490/2004 | 2004-04-08 |
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| CNA2008101667110A Division CN101383271A (en) | 2003-08-07 | 2004-07-28 | Substrate processing apparatus, substrate processing method, and substrate holding apparatus |
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| Publication Number | Publication Date |
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| CN1833314A CN1833314A (en) | 2006-09-13 |
| CN100442448C true CN100442448C (en) | 2008-12-10 |
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| CNB200480022684XA Expired - Fee Related CN100442448C (en) | 2003-08-07 | 2004-07-28 | Substrate processing apparatus, substrate processing method, and substrate holding apparatus |
| CNA2008101667110A Pending CN101383271A (en) | 2003-08-07 | 2004-07-28 | Substrate processing apparatus, substrate processing method, and substrate holding apparatus |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2008101667110A Pending CN101383271A (en) | 2003-08-07 | 2004-07-28 | Substrate processing apparatus, substrate processing method, and substrate holding apparatus |
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| CN107564837A (en) * | 2016-06-30 | 2018-01-09 | 细美事有限公司 | Apparatus and method for handling substrate |
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Also Published As
| Publication number | Publication date |
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| CN101383271A (en) | 2009-03-11 |
| CN1833314A (en) | 2006-09-13 |
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