CN110528042B - Semiconductor device electroplating method and activation tank for electroplating - Google Patents
Semiconductor device electroplating method and activation tank for electroplating Download PDFInfo
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- CN110528042B CN110528042B CN201910802764.5A CN201910802764A CN110528042B CN 110528042 B CN110528042 B CN 110528042B CN 201910802764 A CN201910802764 A CN 201910802764A CN 110528042 B CN110528042 B CN 110528042B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/10—Other heavy metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G3/00—Apparatus for cleaning or pickling metallic material
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
- C25D5/38—Pretreatment of metallic surfaces to be electroplated of refractory metals or nickel
- C25D5/40—Nickel; Chromium
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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Abstract
The invention discloses a semiconductor device electroplating method, which comprises the following steps: an activation step: sending the pretreated nickel substrate semiconductor device into an activation tank for activation treatment, wherein a conductor is arranged in the activation tank; the conductor is electrically connected with the negative electrode of the direct current power supply, and the nickel-based material semiconductor device is electrically connected with the positive electrode of the direct current power supply; when the nickel-based semiconductor device is subjected to activation treatment, the applied voltage value of the direct-current power supply is controlled to be 0.3V-0.5V; electroplating: and electroplating the nickel substrate semiconductor device subjected to the activation treatment. The invention also discloses an activation tank for electroplating. According to the electroplating method of the semiconductor device, the copper ions in the activating solution are promoted to be transferred to the conductor through the potential difference between the conductor and the nickel-based material metal device, so that the copper ions of the activating solution are prevented from gathering to the nickel-based material frame and generating a replacement reaction with the nickel-based material frame, the quality problems of peeling, air bubbles and the like are reduced, and the electroplating effect is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a semiconductor device electroplating method and an activation tank for electroplating.
Background
In the traditional electroplating activation process, a copper base material product is placed in an activation solution and is easy to corrode and is converted into copper ions which are dissociated in the activation solution, and the copper material is also exposed outside in a nickel base material frame, during the activation treatment, the copper substrate is also corroded and converted into copper ions which are dissociated in the activation solution, and at this time, if the activation treatment of the nickel substrate product is carried out, because the activity of the nickel simple substance is stronger than that of the copper simple substance, the nickel simple substance and copper ions in the solution generate a displacement reaction, the nickel simple substance loses electrons and becomes nickel ions to be dissociated in the activation solution, the copper ions obtain electrons and become copper simple substances to be attached to the surface of the nickel base material product, as shown in fig. 17, the nickel base frame 6 is mounted at the jig 7, the simple copper is attached to the surface of the nickel base frame 6, the formed copper simple substance is not uniformly adhered to the surface of the nickel substrate, and the adhesion force is weak. Therefore, when the nickel base material is electroplated with tin, the tin electroplated on the surface of the copper simple substance is easy to cause weak binding force between the nickel base material and the tin plating due to weak adhesive force between the copper simple substance and the nickel base material, and further easy to cause peeling. Because there are copper particles between tin coating and the nickel layer to form the enclosure space around the copper particle, toast the nickel base material product after the electroplating is accomplished, thereby the enclosure space is heated the inflation and produces local bubble, and then produces the influence to product electroplating quality.
Disclosure of Invention
In order to overcome the defects of the prior art, an object of the present invention is to provide a method for electroplating a semiconductor device, which can prevent copper ions in an activation solution from forming a copper simple substance to be attached to the surface of a nickel-based semiconductor device during an activation process of the nickel-based semiconductor device, thereby improving the reliability of subsequent electroplating.
The invention also aims to provide an activation tank for electroplating, which can realize the activation treatment of a nickel-based material semiconductor device, prevent copper ions in an activation solution from forming a copper simple substance to be attached to the surface of the nickel-based material semiconductor device and improve the reliability of subsequent electroplating.
One of the purposes of the invention is realized by adopting the following technical scheme:
a method for electroplating a semiconductor device, comprising the steps of:
a pretreatment step: preprocessing a nickel substrate semiconductor device;
an activation step: sending the pretreated nickel substrate semiconductor device into an activation tank for activation treatment, wherein the activation tank is internally provided with an activation liquid and a conductor; the conductor is electrically connected with the negative electrode of the direct current power supply, and the nickel substrate semiconductor device is electrically connected with the positive electrode of the direct current power supply; controlling the applied voltage value of the direct current power supply to be between 0.3V and 0.5V;
electroplating: and electroplating the nickel substrate semiconductor device subjected to the activation treatment.
Further, the activating solution adopts a microetching solution.
Further, the pretreatment comprises the steps of carrying out metal mold sealing flash softening treatment, high-pressure water removal of metal mold sealing flash, burr treatment and metal oil removal treatment on the nickel-based material semiconductor device.
Further, between the activating step and the electroplating step, the method also comprises the following steps: and carrying out deionized water washing treatment and presoaking treatment on the activated nickel substrate semiconductor device.
Further, when the activation treatment is performed, the temperature of the activation liquid is between 10 degrees celsius and 45 degrees celsius.
The second purpose of the invention is realized by adopting the following technical scheme:
an activation tank for electroplating comprises an activation tank shell, wherein a conductor is arranged in the activation tank shell, and the conductor is arranged at a position which is satisfied that when the activation tank shell contains activation liquid, at least one part of the conductor is immersed in the activation liquid; the conductor is electrically connected with the negative electrode of the direct current power supply, the activation tank is also provided with a semiconductor device mounting position for mounting a semiconductor device, and the semiconductor device mounting position meets the requirement that the semiconductor device can be soaked in the activation liquid when the semiconductor device is positioned at the semiconductor device mounting position and the activation tank shell is internally provided with the activation liquid; the anode of the direct current power supply is electrically connected with the semiconductor device mounting position, and the direct current power supply provides a voltage value of 0.3V-0.5V.
Further, the semiconductor device is a copper substrate semiconductor device or a nickel substrate semiconductor device.
Furthermore, the activation groove shell is internally provided with activation liquid.
Further, the activating solution is a micro-etching solution.
Compared with the prior art, the invention has the beneficial effects that:
in the semiconductor device electroplating method, in the activation step of the nickel-based semiconductor device, negative electricity is applied to the conductor in the activation solution, positive electricity is applied to the nickel-based semiconductor device in the activation solution, the potential difference between the conductor and the nickel-based semiconductor device promotes copper ions in the activation solution to be transferred to the conductor and form elemental copper on the conductor, so that the possibility that the copper ions are converted into the elemental copper on the nickel-based semiconductor device is reduced, quality problems of bubbles, peeling and the like of the nickel-based semiconductor device after electroplating are reduced, and the electroplating reliability is improved.
Drawings
FIG. 1 is a flowchart of a method for electroplating a semiconductor device according to the present embodiment;
FIG. 2 is a diagram showing a first effect of the present embodiment after the activation treatment under the first condition;
FIG. 3 is a diagram showing a second effect of the present embodiment after the activation treatment under the first condition;
FIG. 4 is a diagram illustrating the effect of the electroplating process under the first condition in this embodiment
FIG. 5 is a diagram illustrating a first effect of the present embodiment after the activation treatment under the second condition;
FIG. 6 is a second graph showing a second effect of the present embodiment after the activation treatment under the second condition;
FIG. 7 is a diagram illustrating a first effect of the electroplating process under a second condition in the present embodiment;
FIG. 8 is a diagram illustrating a second effect of the electroplating process under the second condition in the present embodiment;
FIG. 9 is a diagram illustrating the effect of the present embodiment after the activation treatment under the third condition;
FIG. 10 is a diagram illustrating a first effect of the electroplating process under a third condition in the present embodiment;
FIG. 11 is a diagram illustrating a second effect of the electroplating process under a third condition in the present embodiment;
FIG. 12 is a diagram illustrating the effect of the activation process under the fourth condition in the present embodiment;
FIG. 13 is a diagram illustrating a first effect of the electroplating process under a fourth condition in the present embodiment;
FIG. 14 is a diagram illustrating a second effect of the electroplating process under a fourth condition in the present embodiment;
FIG. 15 is a diagram illustrating the effect of the present embodiment after the activation treatment under the fifth condition;
FIG. 16 is a diagram showing the effect of the present embodiment after the activation treatment under the sixth condition;
FIG. 17 is a schematic flow diagram of copper ions during activation of nickel in an activation tank in the prior art;
FIG. 18 is a schematic view showing the flow of copper ions during activation of nickel in the activation bath according to this embodiment.
Reference numerals: 1. activating the tank shell; 2. a semiconductor device; 3. a conductor; 4. a direct current power supply; 5. an installation position; 6. a nickel base frame; 7. and (4) clamping.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and the detailed description, and it should be noted that any combination of the embodiments or technical features described below can be used to form a new embodiment without conflict.
As shown in fig. 1, the present embodiment provides a semiconductor device electroplating method, including the steps of:
s1 preprocessing step: preprocessing a nickel substrate semiconductor device; the pretreatment is a basic step in an electroplating process, mainly aims at treating the surface of a semiconductor device, and mainly comprises the steps of electroplating the nickel-based semiconductor device, wherein the pretreatment comprises the steps of carrying out metal glue overflow treatment on the nickel-based semiconductor device, removing metal glue overflow and burrs by high-pressure water, and carrying out metal oil removal treatment. The nickel-based semiconductor device is a nickel-based frame in this embodiment.
S2 activation step: sending the pretreated nickel substrate semiconductor device into an activation tank for activation treatment, wherein a conductor is arranged in the activation tank; the conductor is electrically connected with the negative electrode of the direct current power supply so that the conductor is arranged in the activating solution as a cathode, and the conductor is made of a corrosion-resistant conductive material, such as stainless steel 316; the shape of the conductor can be plate-shaped, net-shaped or rod-shaped; the nickel substrate semiconductor device is electrically connected with the positive electrode of the direct current power supply; the applied voltage value of the direct current power supply is 0.3V-0.5V. The activation trough contains activation liquid, and in a preferred embodiment, the activation liquid is microetching liquid medicine. The activation step is mainly used for removing oxides formed on the surface of the metal, so that subsequent reliable electroplating is facilitated.
In this embodiment, the microetching solution is an acidic deoxidizer capable of directly corroding metals and oxides thereof, and can perform micron-scale corrosion on a specific substrate. Such as commercially available microetching solution having the product name ACTINAL 988 jar opener salt or DESSCABASE CU 100. The composition of ACTRONAL 988 jar-opening salt includes sodium sulfate, sodium bisulfate and sodium fluoride.
The dc power supply mentioned in this embodiment may be a conventional dc power supply such as a dry cell battery; or a direct current power source converted by an alternating current power source, for example, a direct current power source formed by commercial power through an AC-DC conversion device. Preferably, the activation treatment further comprises: and carrying out deionized water washing treatment and pre-soaking treatment on the activated nickel base material frame.
S3 electroplating step: and electroplating the nickel substrate semiconductor device subjected to the activation treatment.
Although the method is mainly an electroplating method provided for electroplating a nickel-based semiconductor device, the copper-based material frame and the nickel-based material frame can be subjected to activation treatment in the same activation tank of the same electroplating machine, namely when the copper-based material frame is treated, the nickel-based material frame can be directly placed into the activation tank for activation treatment; the activation of the nickel base material frame is not required after the activation solution in the activation tank is replaced after the copper base material frame is subjected to the activation treatment.
Specifically, a nickel substrate frame is used as an anode and connected to a positive electrode of a direct current power supply, a metal plate is used as a conductor and connected to a negative electrode of the direct current power supply, a voltage of 0.3V but not limited to 0.3V is applied between the metal plate and the nickel substrate frame, so that the nickel substrate frame is positively charged, the metal plate is negatively charged, a potential difference between the conductor and a nickel substrate semiconductor device promotes copper ions in an activating solution to be transferred to the conductor and form elemental copper on the conductor, the possibility that the copper ions are converted into the elemental copper on the nickel substrate semiconductor device is reduced, quality problems of bubble generation, peeling and the like of the nickel substrate semiconductor device after electroplating are reduced, the electroplating reliability is improved, and the like
In this embodiment, when the microetching solution reacts with copper and nickel in a reduction reaction, the reaction principle and the corresponding voltage are as follows:
| reduction reaction | Under the condition of 25 ℃ and 1mol, the standard reduction voltage of copper metal |
| Cu2++2e-<＝＝>Cu | +0.337V |
The table shows the potential situation in the standard case, but the required potential difference will also change somewhat when the temperature rises or the copper ion concentration increases. When the voltage exceeds 0.5V, the following reaction occurs: ni +2H+＝＝>Ni2++H2. When such a reaction occurs, the nickel substrate loses electrons and becomes nickel ions, which enter the activation solution. Therefore, the most preferable voltage range in this embodiment is 0.3V to 0.5V.
As shown in fig. 18, an activation tank for electroplating comprises an activation tank shell 1, wherein the activation tank shell 1 can contain an activation liquid, in a preferred embodiment, the activation liquid adopts a microetching solution, the activation tank shell is provided with a conductor 3, a mounting position 5 for mounting a copper substrate semiconductor device and/or a nickel substrate semiconductor device is further arranged in the activation tank, and the mounting position 5 is arranged at a position such that when the semiconductor device is mounted at the mounting position 5, the semiconductor device 2 is soaked in the microetching solution; the direct current power supply device further comprises a direct current power supply 4, wherein the positive electrode of the direct current power supply 4 is electrically connected with the installation position 5, and the negative electrode of the direct current power supply 4 is electrically connected with the conductor 3.
In the embodiment, specifically, the nickel base frame is installed at the installation position 5 in the electroplating machine, and the positive electrode of the direct current power supply is further connected with the nickel base frame through the installation position 5. When the nickel base material is activated, the electroplating program automatically applies voltage to ensure that copper ions in the solution are reduced into copper simple substances to be attached to the conductor by electrons, thereby preventing the copper ions of the activation solution from gathering to the nickel base material frame and generating a replacement reaction with the copper ions.
When the copper substrate frame is subjected to activation treatment, the direct current power supply is cut off, and the conductor and the copper substrate frame are not electrified; because the copper simple substance of the copper base material framework and the copper ions in the activating solution are the same chemical elements, the displacement reaction can not occur. However, the nickel base material frame is different from the nickel base material frame in that the metal activity of nickel is stronger than that of copper, and when the nickel base material frame enters the activation liquid, the copper ions exist in the activation liquid, and the copper ions and the activation liquid can generate a displacement reaction, so that the copper ions are changed into simple copper substances and are attached to the surface of the nickel base material frame, and the reliability of subsequent electroplating is further influenced. According to the invention, the metal plate is added into the activation groove to serve as the conductor so as to form a potential difference between the nickel base material frame and the conductor, so that copper ions in the activation solution are transferred to the conductor, and the reaction with nickel is avoided. In this way, the activation treatment of the copper substrate semiconductor device and the activation treatment of the nickel substrate semiconductor device can be carried out in the same activation tank of the same electroplating machine, thereby greatly improving the production flexibility.
For the nickel substrate frame, six different conditions were set for the activation treatment in this example; performing appearance inspection on the nickel substrate frame when the frame is in the first condition; the first condition is 0 volt/0 ampere, namely the anode of the product has no voltage, the conductor has no current, the nickel base material frame stays in the activation groove for 3 minutes, and the concentration of copper ions in the activation groove is 3.2 grams/liter; as shown in fig. 2 and 3, after the activation treatment, a part of small amount of copper ions are reduced to copper simple substance which is attached to the surface of the nickel substrate frame and the conveying steel belt; as shown in fig. 4, the appearance of the product was checked after the electrolytic tinning, and no defects such as bubbles and peeling were generated, but bubbles and peeling were generated on the surface of the conveyor belt.
Performing appearance inspection on the nickel substrate frame when the frame is in the second condition; the second condition is 0 volt/0 ampere, namely the positive electrode does not provide voltage, the conductor does not provide current, the nickel base material frame stays in the activation slot for 5 minutes, and the concentration of copper ions in the activation slot is 15 g/L; as shown in fig. 5 and 6, after the activation treatment, it was found that many copper ions were reduced to elemental copper adhering to the surface of the nickel base material frame and the conveying steel belt; the copper ion concentration in the microetching liquid is increased, so that the replacement reaction speed is relatively higher; as shown in fig. 7 and 8, the appearance of the product was checked after the nickel base material frame was electroplated with tin, and bubbles and peeling defects were found, and also bubbles and peeling were generated on the surface of the transport steel strip.
Performing appearance inspection on the nickel substrate frame when the frame is in the third condition; the third condition is 0.3 volt/1 ampere, and the third condition is 0.3 volt/1 ampere, namely that 0.3V voltage is provided by the positive electrode to enable the nickel base material frame to be positively charged, 1A current is provided by the conductor to enable the nickel base material frame to be formed with electrons, the nickel base material frame stays in the activation groove for 3 minutes, and the concentration of copper ions in the activation groove is 3.2 grams/liter; as shown in fig. 9, after the activation treatment, reduction of copper ions to elemental copper was not found to adhere to the nickel base material frame; as shown in fig. 10 and 11, the appearance of the product was checked after the nickel base material frame was electroplated with tin, no bubbles and peeling defects were found, and no peeling occurred on the surface of the conveying steel strip.
When in the fourth condition, performing appearance inspection on the nickel base material frame; the fourth condition is 0.3 volt/1 ampere, and the fourth condition is 0.3 volt/1 ampere, namely that 0.3V voltage is provided by the positive electrode to enable the nickel base material frame to be positively charged, 1A current is provided by the conductor to enable the nickel base material frame to form electrons, the nickel base material frame stays in the activation groove for 5 minutes, and the concentration of copper ions in the activation groove is 15 g/L; as shown in fig. 12, after the activation treatment, a small amount of copper ions were found to be reduced to copper simple substance attached to the nickel base material frame; as shown in fig. 13 and 14, when the appearance of the frame was checked after the tin plating, no bubble and peeling defect were found, and no peeling occurred on the surface of the conveyor belt.
When in the fifth condition, performing appearance inspection on the nickel base material frame; the fifth condition is 0.5 volt/3 ampere, and the fifth condition is 0.5 volt/3 ampere, namely that 0.5V voltage is provided by the positive electrode to enable the nickel base material frame to be positively charged, 3A current is provided by the conductor to enable the nickel base material frame to be formed with electrons, the nickel base material frame stays in the activation groove for 3 minutes, and the concentration of copper ions in the activation groove is 3.2 grams/liter; as shown in fig. 15, after the activation treatment, reduction of copper ions to elemental copper was not found to adhere to the nickel base material frame; the appearance of the product after the nickel base material frame was electroplated with tin was checked, no bubbles were found, and no peeling occurred on the surface of the conveying steel strip, and the final effect is shown in fig. 13 and 14.
When in the sixth condition, performing appearance inspection on the nickel base material frame; the sixth condition is 0.5V/3A, and the sixth condition is 0.5V/3A, that is, the positive electrode provides 0.5V to make the nickel substrate frame positively charged, the conductor provides 3A current to make it form electrons, the nickel substrate frame stays in the activation slot for 5 minutes, and the concentration of copper ions in the activation slot is 15 g/l; as shown in fig. 16, after the activation treatment, a small amount of copper ions are reduced to copper simple substance to adhere to the nickel base frame, but the surface of the nickel base frame is corroded and stripped by an excessive current of 3 amperes as shown in fig. 16; the appearance of the product after the electrolytic tinning was checked, no bubble and peeling defect were found, and no peeling occurred on the surface of the conveying steel strip, and the final effect is shown in fig. 13 and 14.
The above experiments under various conditions show that: if no voltage is set in the microetching liquid, so that copper ions are reduced to elemental copper at the conductor, the copper ions are reduced to elemental copper in the activating liquid and are attached to the nickel base material frame and the surface of the conveying steel strip, and the phenomena of bubbles and peeling defects are generated on the electroplated layer.
When the activation tank is provided with 0.3-0.5 volt and 1-3 ampere current parameters, copper ions can be effectively inhibited from being reduced into copper simple substances to be attached to the nickel base material frame and the surface of a machine conveying steel belt. However, when a current of 3 amperes and a voltage of 0.5V were used, it was evident that slight corrosion peeling was observed on the surface of the nickel layer, but the quality results for its frame itself were normally acceptable, and if a larger current was added, severe corrosion peeling was caused on the surface of the nickel substrate. Therefore, in the present embodiment, the voltage applied by the dc power supply is between 0.3V and 0.5V, and more preferably 0.337V.
After the semiconductor device is subjected to sufficient activation treatment, the oxide on the surface of the nickel base material frame is thoroughly removed through the activation treatment, so that the metal layer and the tin layer of the semiconductor device are firmly combined, and a good electroplating effect is obtained. The electroplating process provided by the prior art is adopted for electroplating the nickel substrate semiconductor device, and the method provided by the invention is not improved and is not repeated.
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are within the protection scope of the present invention.
Claims (8)
1. A method for electroplating a semiconductor device, comprising the steps of:
a pretreatment step: preprocessing a nickel substrate semiconductor device;
an activation step: sending the pretreated nickel substrate semiconductor device into an activation tank for activation treatment, wherein the activation tank is internally provided with an activation liquid and a conductor; the conductor is electrically connected with the negative electrode of the direct current power supply, and the nickel substrate semiconductor device is electrically connected with the positive electrode of the direct current power supply; controlling the applied voltage value of the direct current power supply to be 0.3V-0.5V;
electroplating: electroplating the nickel substrate semiconductor device subjected to the activation treatment;
wherein the activating solution adopts a microetching solution.
2. The electroplating method for the semiconductor device according to claim 1, wherein the pretreatment comprises the steps of softening the metal mold flash, removing the metal mold flash with high pressure water, deburring and degreasing the metal on the nickel-based semiconductor device.
3. A method for electroplating a semiconductor device according to claim 1 or 2, further comprising, between the activating step and the electroplating step: and carrying out deionized water washing treatment and presoaking treatment on the activated nickel substrate semiconductor device.
4. A semiconductor device plating method according to claim 1 or 2, characterized in that the temperature of said activating liquid is between 10 degrees celsius and 45 degrees celsius when the activating treatment is performed.
5. An activation tank for electroplating comprises an activation tank shell, and is characterized in that a conductor is arranged in the activation tank shell, and the conductor is arranged at a position such that at least one part of the conductor is immersed in an activation solution when the activation tank shell contains the activation solution; the conductor is electrically connected with the negative electrode of the direct current power supply, the activation tank is also provided with a semiconductor device mounting position for mounting a semiconductor device, and the semiconductor device mounting position meets the requirement that the semiconductor device can be soaked in the activation liquid when the semiconductor device is positioned at the semiconductor device mounting position and the activation tank shell is internally provided with the activation liquid; the positive pole of the direct current power supply is electrically connected with the semiconductor device mounting position, and the direct current power supply provides a voltage value of 0.3V-0.5V.
6. The activation tank for electroplating according to claim 5, wherein the semiconductor device is a copper substrate semiconductor device and a nickel substrate semiconductor device or a nickel substrate semiconductor device.
7. The activation tank for electroplating according to claim 5, wherein the activation tank shell further contains an activation liquid.
8. The activation tank for electroplating according to claim 7, wherein the activation liquid is a microetching solution.
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