JP6276947B2 - 加工方法 - Google Patents
加工方法 Download PDFInfo
- Publication number
- JP6276947B2 JP6276947B2 JP2013181016A JP2013181016A JP6276947B2 JP 6276947 B2 JP6276947 B2 JP 6276947B2 JP 2013181016 A JP2013181016 A JP 2013181016A JP 2013181016 A JP2013181016 A JP 2013181016A JP 6276947 B2 JP6276947 B2 JP 6276947B2
- Authority
- JP
- Japan
- Prior art keywords
- device wafer
- protective film
- processing
- laser beam
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003672 processing method Methods 0.000 title claims description 9
- 230000001681 protective effect Effects 0.000 claims description 56
- 239000011347 resin Substances 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 12
- 239000007888 film coating Substances 0.000 claims description 8
- 238000009501 film coating Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000003892 spreading Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 5
- 238000005406 washing Methods 0.000 description 4
- 238000002679 ablation Methods 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013181016A JP6276947B2 (ja) | 2013-09-02 | 2013-09-02 | 加工方法 |
TW103126219A TWI660415B (zh) | 2013-09-02 | 2014-07-31 | 加工方法 |
KR1020140111381A KR102104138B1 (ko) | 2013-09-02 | 2014-08-26 | 가공 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013181016A JP6276947B2 (ja) | 2013-09-02 | 2013-09-02 | 加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015047618A JP2015047618A (ja) | 2015-03-16 |
JP6276947B2 true JP6276947B2 (ja) | 2018-02-07 |
Family
ID=52698092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013181016A Active JP6276947B2 (ja) | 2013-09-02 | 2013-09-02 | 加工方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6276947B2 (ko) |
KR (1) | KR102104138B1 (ko) |
TW (1) | TWI660415B (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102358063B1 (ko) * | 2020-05-18 | 2022-02-04 | (주)미래컴퍼니 | 박막 제거 장치 및 박막 제거 방법 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05100435A (ja) * | 1991-10-07 | 1993-04-23 | Nikon Corp | 薄膜除去方法 |
JPH05327186A (ja) * | 1992-05-18 | 1993-12-10 | Fujitsu Ltd | パターンカット方法 |
US5493096A (en) * | 1994-05-10 | 1996-02-20 | Grumman Aerospace Corporation | Thin substrate micro-via interconnect |
US6562698B2 (en) * | 1999-06-08 | 2003-05-13 | Kulicke & Soffa Investments, Inc. | Dual laser cutting of wafers |
JP3484396B2 (ja) * | 2000-05-09 | 2004-01-06 | 新光電気工業株式会社 | ウェハーの切断方法 |
JP4447325B2 (ja) * | 2002-02-25 | 2010-04-07 | 株式会社ディスコ | 半導体ウェーハの分割方法 |
JP2004188475A (ja) * | 2002-12-13 | 2004-07-08 | Disco Abrasive Syst Ltd | レーザー加工方法 |
JP4471632B2 (ja) * | 2003-11-18 | 2010-06-02 | 株式会社ディスコ | ウエーハの加工方法 |
US7211500B2 (en) * | 2004-09-27 | 2007-05-01 | United Microelectronics Corp. | Pre-process before cutting a wafer and method of cutting a wafer |
KR100689698B1 (ko) * | 2005-01-12 | 2007-03-08 | 주식회사 이오테크닉스 | 패시베이션층이 형성된 대상물 가공 방법 |
US7265034B2 (en) * | 2005-02-18 | 2007-09-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of cutting integrated circuit chips from wafer by ablating with laser and cutting with saw blade |
JP4932372B2 (ja) * | 2006-07-31 | 2012-05-16 | オプトレックス株式会社 | マザー基板の切断方法 |
JP4959422B2 (ja) * | 2007-05-30 | 2012-06-20 | 株式会社ディスコ | ウエーハの分割方法 |
JP2012000622A (ja) * | 2010-06-14 | 2012-01-05 | Mitsuboshi Diamond Industrial Co Ltd | 脆性材料基板のレーザスクライブ方法 |
CA2772727A1 (en) * | 2011-04-01 | 2012-10-01 | Esi-Pyrophotonics Lasers Inc. | Method and apparatus to scribe thin film layers of cadium telluride solar cells |
JP5881464B2 (ja) * | 2012-02-27 | 2016-03-09 | 株式会社ディスコ | ウェーハのレーザー加工方法 |
-
2013
- 2013-09-02 JP JP2013181016A patent/JP6276947B2/ja active Active
-
2014
- 2014-07-31 TW TW103126219A patent/TWI660415B/zh active
- 2014-08-26 KR KR1020140111381A patent/KR102104138B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR102104138B1 (ko) | 2020-04-23 |
KR20150026884A (ko) | 2015-03-11 |
TWI660415B (zh) | 2019-05-21 |
TW201515082A (zh) | 2015-04-16 |
JP2015047618A (ja) | 2015-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6739873B2 (ja) | ウェーハの加工方法 | |
JP7068028B2 (ja) | ウェーハの分割方法 | |
JP5881464B2 (ja) | ウェーハのレーザー加工方法 | |
US9627242B2 (en) | Wafer processing method | |
JP4903523B2 (ja) | ウエーハのレーザー加工方法 | |
JP2013207170A (ja) | デバイスウェーハの分割方法 | |
KR102429205B1 (ko) | 웨이퍼의 가공 방법 | |
JP2016157892A (ja) | ウエーハの加工方法 | |
TW202015116A (zh) | 晶圓的加工方法 | |
JP2016025282A (ja) | パッケージ基板の加工方法 | |
JP2015138857A (ja) | ウェーハの加工方法 | |
JP6276947B2 (ja) | 加工方法 | |
JP2016042526A (ja) | ウェーハの加工方法 | |
JP6438304B2 (ja) | ウエーハの加工方法 | |
TWI713741B (zh) | 晶圓之加工方法 | |
JP6713214B2 (ja) | デバイスウェーハの加工方法 | |
JP2021068778A (ja) | 被加工物の加工方法 | |
TWI569371B (zh) | 鐳射單切晶元過程中保護安裝磁帶的方法 | |
JP2018113395A (ja) | ウェーハの加工方法 | |
JP2023077664A (ja) | ウエーハの加工方法 | |
JP7051615B2 (ja) | ウエーハの加工方法 | |
JP6823528B2 (ja) | ウエーハの加工方法 | |
JP5288785B2 (ja) | ウェーハ加工装置 | |
JP6692577B2 (ja) | ウェーハの加工方法 | |
JP2023078910A (ja) | ウエーハの加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20150428 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160719 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170512 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170518 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170714 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171019 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171208 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171219 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180115 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6276947 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |