JP6275610B2 - プラズマ処理方法およびプラズマ処理装置 - Google Patents

プラズマ処理方法およびプラズマ処理装置 Download PDF

Info

Publication number
JP6275610B2
JP6275610B2 JP2014196467A JP2014196467A JP6275610B2 JP 6275610 B2 JP6275610 B2 JP 6275610B2 JP 2014196467 A JP2014196467 A JP 2014196467A JP 2014196467 A JP2014196467 A JP 2014196467A JP 6275610 B2 JP6275610 B2 JP 6275610B2
Authority
JP
Japan
Prior art keywords
plasma
coating film
sample
plasma processing
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014196467A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016072264A5 (enExample
JP2016072264A (ja
Inventor
義人 釜地
義人 釜地
角屋　誠浩
誠浩 角屋
基裕 田中
基裕 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2014196467A priority Critical patent/JP6275610B2/ja
Publication of JP2016072264A publication Critical patent/JP2016072264A/ja
Publication of JP2016072264A5 publication Critical patent/JP2016072264A5/ja
Application granted granted Critical
Publication of JP6275610B2 publication Critical patent/JP6275610B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2014196467A 2014-09-26 2014-09-26 プラズマ処理方法およびプラズマ処理装置 Active JP6275610B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014196467A JP6275610B2 (ja) 2014-09-26 2014-09-26 プラズマ処理方法およびプラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014196467A JP6275610B2 (ja) 2014-09-26 2014-09-26 プラズマ処理方法およびプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2016072264A JP2016072264A (ja) 2016-05-09
JP2016072264A5 JP2016072264A5 (enExample) 2017-02-09
JP6275610B2 true JP6275610B2 (ja) 2018-02-07

Family

ID=55864905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014196467A Active JP6275610B2 (ja) 2014-09-26 2014-09-26 プラズマ処理方法およびプラズマ処理装置

Country Status (1)

Country Link
JP (1) JP6275610B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6630649B2 (ja) * 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
CN110268508B (zh) 2017-03-27 2024-03-19 株式会社日立高新技术 等离子体处理方法
JP6845773B2 (ja) * 2017-09-15 2021-03-24 株式会社日立ハイテク プラズマ処理方法
CN112640062B (zh) * 2018-09-05 2024-04-12 株式会社国际电气 清扫方法、半导体装置的制造方法、记录介质和基板处理装置
JP7357182B1 (ja) * 2021-12-22 2023-10-05 東京エレクトロン株式会社 基板処理装置のメンテナンス方法及び基板処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW422892B (en) * 1997-03-27 2001-02-21 Applied Materials Inc Technique for improving chucking reproducibility
JP2008244292A (ja) * 2007-03-28 2008-10-09 Hitachi High-Technologies Corp プラズマ処理装置の処理性能安定化方法
JP5450187B2 (ja) * 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5642427B2 (ja) * 2010-05-24 2014-12-17 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2013214584A (ja) * 2012-04-02 2013-10-17 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP6071514B2 (ja) * 2012-12-12 2017-02-01 東京エレクトロン株式会社 静電チャックの改質方法及びプラズマ処理装置

Also Published As

Publication number Publication date
JP2016072264A (ja) 2016-05-09

Similar Documents

Publication Publication Date Title
JP5450187B2 (ja) プラズマ処理装置およびプラズマ処理方法
KR100511803B1 (ko) 반도체장치의제조방법
US9147556B2 (en) Plasma processing method and plasma processing apparatus
JP5956933B2 (ja) プラズマ処理方法及びプラズマ処理装置
JP6275610B2 (ja) プラズマ処理方法およびプラズマ処理装置
JP6422262B2 (ja) プラズマ処理方法及びプラズマ処理装置
TWI442468B (zh) Plasma processing device and plasma processing method
JP5750496B2 (ja) プラズマ処理方法
JP6845773B2 (ja) プラズマ処理方法
TW201814786A (zh) 電漿處理方法
JP4828456B2 (ja) プラズマ処理方法及びプラズマ処理装置
JP5110987B2 (ja) プラズマ処理方法およびコンピュータ読み取り可能な記録媒体
JP6169666B2 (ja) プラズマ処理方法
US20140284308A1 (en) Plasma etching method and plasma etching apparatus
US9691618B2 (en) Methods of fabricating semiconductor devices including performing an atomic layer etching process
JP5853087B2 (ja) プラズマ処理方法
JP6902941B2 (ja) プラズマ処理方法およびプラズマ処理装置
KR101953149B1 (ko) 플라스마 처리 방법
CN105702572A (zh) 等离子体蚀刻方法
JP6667400B2 (ja) プラズマエッチング方法およびプラズマエッチングシステム
JPH10242130A (ja) プラズマ処理方法及び装置
JP4224374B2 (ja) プラズマ処理装置の処理方法およびプラズマ処理方法
JP2015088696A (ja) プラズマ処理方法
US20220351981A1 (en) Etching method, plasma processing apparatus, substrate processing system, and program
JP3727312B2 (ja) プラズマ処理装置のプラズマ処理方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170104

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170123

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170925

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171003

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171127

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20171212

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180110

R150 Certificate of patent or registration of utility model

Ref document number: 6275610

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350