JP6275610B2 - プラズマ処理方法およびプラズマ処理装置 - Google Patents

プラズマ処理方法およびプラズマ処理装置 Download PDF

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JP6275610B2
JP6275610B2 JP2014196467A JP2014196467A JP6275610B2 JP 6275610 B2 JP6275610 B2 JP 6275610B2 JP 2014196467 A JP2014196467 A JP 2014196467A JP 2014196467 A JP2014196467 A JP 2014196467A JP 6275610 B2 JP6275610 B2 JP 6275610B2
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plasma
coating film
sample
plasma processing
film
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JP2016072264A (ja
JP2016072264A5 (enrdf_load_stackoverflow
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義人 釜地
義人 釜地
角屋 誠浩
誠浩 角屋
基裕 田中
基裕 田中
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Hitachi High Tech Corp
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JP2014196467A 2014-09-26 2014-09-26 プラズマ処理方法およびプラズマ処理装置 Active JP6275610B2 (ja)

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JP2016072264A5 JP2016072264A5 (enrdf_load_stackoverflow) 2017-02-09
JP6275610B2 true JP6275610B2 (ja) 2018-02-07

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Publication number Priority date Publication date Assignee Title
JP6630649B2 (ja) * 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR102490700B1 (ko) * 2017-03-27 2023-01-26 주식회사 히타치하이테크 플라스마 처리 방법
JP6845773B2 (ja) 2017-09-15 2021-03-24 株式会社日立ハイテク プラズマ処理方法
CN112640062B (zh) * 2018-09-05 2024-04-12 株式会社国际电气 清扫方法、半导体装置的制造方法、记录介质和基板处理装置
CN117321740B (zh) * 2021-12-22 2024-06-25 东京毅力科创株式会社 基板处理装置的维护方法和基板处理装置

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TW422892B (en) * 1997-03-27 2001-02-21 Applied Materials Inc Technique for improving chucking reproducibility
JP2008244292A (ja) * 2007-03-28 2008-10-09 Hitachi High-Technologies Corp プラズマ処理装置の処理性能安定化方法
JP5450187B2 (ja) * 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5642427B2 (ja) * 2010-05-24 2014-12-17 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2013214584A (ja) * 2012-04-02 2013-10-17 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP6071514B2 (ja) * 2012-12-12 2017-02-01 東京エレクトロン株式会社 静電チャックの改質方法及びプラズマ処理装置

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