JP6272329B2 - 密閉されたｍｅｍｓデバイスと関連した埋め込み下部電極を形成するためのシステムおよび方法 - Google Patents

密閉されたｍｅｍｓデバイスと関連した埋め込み下部電極を形成するためのシステムおよび方法 Download PDF

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JP6272329B2
JP6272329B2 JP2015528561A JP2015528561A JP6272329B2 JP 6272329 B2 JP6272329 B2 JP 6272329B2 JP 2015528561 A JP2015528561 A JP 2015528561A JP 2015528561 A JP2015528561 A JP 2015528561A JP 6272329 B2 JP6272329 B2 JP 6272329B2
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layer
wafer
electrode
contact
doped region
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JP2015527211A (ja
JP2015527211A5 (https=
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アンドリュー・ビー・グラハム
アンドー・フェイ
ゲイリー・オブライエン
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/092—Buried interconnects in the substrate or in the lid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/094—Feed-through, via
    • B81B2207/095—Feed-through, via through the lid

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2015528561A 2012-08-21 2013-08-20 密閉されたｍｅｍｓデバイスと関連した埋め込み下部電極を形成するためのシステムおよび方法 Active JP6272329B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261691662P 2012-08-21 2012-08-21
US61/691,662 2012-08-21
PCT/US2013/055668 WO2014031570A1 (en) 2012-08-21 2013-08-20 System and method for forming a buried lower electrode in conjunction with an encapsulated mems device

Publications (3)

Publication Number Publication Date
JP2015527211A JP2015527211A (ja) 2015-09-17
JP2015527211A5 JP2015527211A5 (https=) 2017-09-21
JP6272329B2 true JP6272329B2 (ja) 2018-01-31

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JP2015528561A Active JP6272329B2 (ja) 2012-08-21 2013-08-20 密閉されたｍｅｍｓデバイスと関連した埋め込み下部電極を形成するためのシステムおよび方法

Country Status (6)

Country Link
US (1) US10160632B2 (https=)
JP (1) JP6272329B2 (https=)
CN (1) CN104736469B (https=)
DE (1) DE112013004119B4 (https=)
TW (1) TWI623027B (https=)
WO (1) WO2014031570A1 (https=)

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DE102012210049A1 (de) * 2012-06-14 2013-12-19 Robert Bosch Gmbh Hybrid integriertes Bauteil und Verfahren zu dessen Herstellung
WO2014123922A1 (en) 2013-02-05 2014-08-14 Butterfly Network, Inc. Cmos ultrasonic transducers and related apparatus and methods
CN105174203B (zh) * 2014-05-28 2016-09-28 无锡华润上华半导体有限公司 基于mems的传感器的制作方法
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
DE102015203393A1 (de) * 2015-02-25 2016-08-25 Infineon Technologies Ag Halbleiterelement und Verfahren zu Herstellen von diesem
CN105540528A (zh) * 2015-12-14 2016-05-04 中国科学院半导体研究所 Mems电容式超声波传感器及其制备方法
EP3397587B1 (en) * 2015-12-30 2019-11-20 Robert Bosch GmbH System and method for maintaining a smoothed surface on a mems device
US10513429B2 (en) * 2016-07-27 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Integration scheme for microelectromechanical systems (MEMS) devices and complementary metal-oxide-semiconductor (CMOS) devices
US10196261B2 (en) 2017-03-08 2019-02-05 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
EP3642611B1 (en) 2017-06-21 2024-02-14 Butterfly Network, Inc. Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections
US10466126B2 (en) * 2018-02-27 2019-11-05 Globalfoundries Inc. MEMS capacitive pressure sensors in fully depleted semiconductor on insulator (FDSOI)
DE102018210815A1 (de) * 2018-06-30 2020-01-02 Robert Bosch Gmbh Elektrische Kontaktierung, Verfahren zur Herstellung einer elektrischen Kontaktierung, System
EP3885042A1 (en) 2020-03-24 2021-09-29 Imec VZW Method for fabricating a microfluidic device
IT202000011755A1 (it) * 2020-05-20 2021-11-20 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo micro-elettro-meccanico, in particolare sensore di movimento con comando/rilevazione di tipo capacitivo, e relativo dispositivo mems
DE102022208515A1 (de) * 2022-08-17 2024-02-22 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Siliziumschichtsystems mit elektrischen Verbindungen
DE102022208514A1 (de) * 2022-08-17 2024-02-22 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von mikroelektromechanischen Strukturen

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JP3399336B2 (ja) 1997-12-22 2003-04-21 株式会社豊田中央研究所 検出器
US6664126B1 (en) 1999-09-03 2003-12-16 University Of Maryland, College Park Process for fabrication of 3-dimensional micromechanisms
EP1151962B1 (en) 2000-04-28 2007-06-13 STMicroelectronics S.r.l. Structure for electrically connecting a first body of semiconductor material overlaid by a second body of semiconductor material, composite structure using the electric connection structure, and manufacturing process thereof
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JP4737140B2 (ja) 2006-10-20 2011-07-27 セイコーエプソン株式会社 Ｍｅｍｓデバイスおよびその製造方法
CN101953174B (zh) 2007-11-21 2014-12-10 奥迪欧彼塞尔斯有限公司 数字扬声器装置
US8125046B2 (en) 2008-06-04 2012-02-28 Infineon Technologies Ag Micro-electromechanical system devices
US8148790B2 (en) 2008-07-08 2012-04-03 Wispry, Inc. Thin-film lid MEMS devices and methods
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US8563345B2 (en) * 2009-10-02 2013-10-22 National Semiconductor Corporated Integration of structurally-stable isolated capacitive micromachined ultrasonic transducer (CMUT) array cells and array elements
JP5218497B2 (ja) 2009-12-04 2013-06-26 株式会社デンソー 半導体装置およびその製造方法
IT1400096B1 (it) * 2010-05-12 2013-05-17 St Microelectronics Srl Processo di fabbricazione di circuiti elettronici integrati e circuiti cosi' ottenuti
DE102010062555B4 (de) 2010-12-08 2019-05-23 Robert Bosch Gmbh Mikromechanische Membranvorrichtung und entsprechendes Herstellungsverfahren sowie Membrananordnung
US8673756B2 (en) 2011-04-14 2014-03-18 Robert Bosch Gmbh Out-of-plane spacer defined electrode

Also Published As

Publication number Publication date
DE112013004119T5 (de) 2015-05-28
CN104736469A (zh) 2015-06-24
US20140054730A1 (en) 2014-02-27
WO2014031570A1 (en) 2014-02-27
JP2015527211A (ja) 2015-09-17
TWI623027B (zh) 2018-05-01
CN104736469B (zh) 2017-12-26
TW201417152A (zh) 2014-05-01
US10160632B2 (en) 2018-12-25
DE112013004119B4 (de) 2024-09-19

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