TWI623027B - 用於形成結合囊封的微機電系統裝置的埋入式下層電極之系統和方法 - Google Patents
用於形成結合囊封的微機電系統裝置的埋入式下層電極之系統和方法 Download PDFInfo
- Publication number
- TWI623027B TWI623027B TW102130179A TW102130179A TWI623027B TW I623027 B TWI623027 B TW I623027B TW 102130179 A TW102130179 A TW 102130179A TW 102130179 A TW102130179 A TW 102130179A TW I623027 B TWI623027 B TW I623027B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- contact
- electrode
- doped region
- wafer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims description 26
- 239000003989 dielectric material Substances 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 abstract description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 6
- 150000002500 ions Chemical class 0.000 abstract description 5
- 125000006850 spacer group Chemical group 0.000 abstract description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 abstract 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 abstract 1
- 230000008569 process Effects 0.000 description 15
- 238000002955 isolation Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 229940119177 germanium dioxide Drugs 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/092—Buried interconnects in the substrate or in the lid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/094—Feed-through, via
- B81B2207/095—Feed-through, via through the lid
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261691662P | 2012-08-21 | 2012-08-21 | |
| US61/691,662 | 2012-08-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201417152A TW201417152A (zh) | 2014-05-01 |
| TWI623027B true TWI623027B (zh) | 2018-05-01 |
Family
ID=49085201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102130179A TWI623027B (zh) | 2012-08-21 | 2013-08-22 | 用於形成結合囊封的微機電系統裝置的埋入式下層電極之系統和方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10160632B2 (https=) |
| JP (1) | JP6272329B2 (https=) |
| CN (1) | CN104736469B (https=) |
| DE (1) | DE112013004119B4 (https=) |
| TW (1) | TWI623027B (https=) |
| WO (1) | WO2014031570A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012210049A1 (de) * | 2012-06-14 | 2013-12-19 | Robert Bosch Gmbh | Hybrid integriertes Bauteil und Verfahren zu dessen Herstellung |
| WO2014123922A1 (en) | 2013-02-05 | 2014-08-14 | Butterfly Network, Inc. | Cmos ultrasonic transducers and related apparatus and methods |
| CN105174203B (zh) * | 2014-05-28 | 2016-09-28 | 无锡华润上华半导体有限公司 | 基于mems的传感器的制作方法 |
| US9067779B1 (en) | 2014-07-14 | 2015-06-30 | Butterfly Network, Inc. | Microfabricated ultrasonic transducers and related apparatus and methods |
| DE102015203393A1 (de) * | 2015-02-25 | 2016-08-25 | Infineon Technologies Ag | Halbleiterelement und Verfahren zu Herstellen von diesem |
| CN105540528A (zh) * | 2015-12-14 | 2016-05-04 | 中国科学院半导体研究所 | Mems电容式超声波传感器及其制备方法 |
| EP3397587B1 (en) * | 2015-12-30 | 2019-11-20 | Robert Bosch GmbH | System and method for maintaining a smoothed surface on a mems device |
| US10513429B2 (en) * | 2016-07-27 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integration scheme for microelectromechanical systems (MEMS) devices and complementary metal-oxide-semiconductor (CMOS) devices |
| US10196261B2 (en) | 2017-03-08 | 2019-02-05 | Butterfly Network, Inc. | Microfabricated ultrasonic transducers and related apparatus and methods |
| EP3642611B1 (en) | 2017-06-21 | 2024-02-14 | Butterfly Network, Inc. | Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections |
| US10466126B2 (en) * | 2018-02-27 | 2019-11-05 | Globalfoundries Inc. | MEMS capacitive pressure sensors in fully depleted semiconductor on insulator (FDSOI) |
| DE102018210815A1 (de) * | 2018-06-30 | 2020-01-02 | Robert Bosch Gmbh | Elektrische Kontaktierung, Verfahren zur Herstellung einer elektrischen Kontaktierung, System |
| EP3885042A1 (en) | 2020-03-24 | 2021-09-29 | Imec VZW | Method for fabricating a microfluidic device |
| IT202000011755A1 (it) * | 2020-05-20 | 2021-11-20 | St Microelectronics Srl | Procedimento di fabbricazione di un dispositivo micro-elettro-meccanico, in particolare sensore di movimento con comando/rilevazione di tipo capacitivo, e relativo dispositivo mems |
| DE102022208515A1 (de) * | 2022-08-17 | 2024-02-22 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Siliziumschichtsystems mit elektrischen Verbindungen |
| DE102022208514A1 (de) * | 2022-08-17 | 2024-02-22 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung von mikroelektromechanischen Strukturen |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI253436B (en) * | 2004-02-27 | 2006-04-21 | Opus Microsystems Corp | Micromechanical actuator with multiple-plane comb electrodes and methods of making |
| CN100339738C (zh) * | 2004-03-12 | 2007-09-26 | 先进微系统科技股份有限公司 | 具有多组梳状电极的微机电致动器及其制造方法 |
| DE102010062555A1 (de) * | 2010-12-08 | 2012-06-14 | Robert Bosch Gmbh | Mikromechanische Membranvorrichtung und entsprechendes Herstellungsverfahren |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3399336B2 (ja) | 1997-12-22 | 2003-04-21 | 株式会社豊田中央研究所 | 検出器 |
| US6664126B1 (en) | 1999-09-03 | 2003-12-16 | University Of Maryland, College Park | Process for fabrication of 3-dimensional micromechanisms |
| EP1151962B1 (en) | 2000-04-28 | 2007-06-13 | STMicroelectronics S.r.l. | Structure for electrically connecting a first body of semiconductor material overlaid by a second body of semiconductor material, composite structure using the electric connection structure, and manufacturing process thereof |
| US6913941B2 (en) | 2002-09-09 | 2005-07-05 | Freescale Semiconductor, Inc. | SOI polysilicon trench refill perimeter oxide anchor scheme |
| US6940705B2 (en) | 2003-07-25 | 2005-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capacitor with enhanced performance and method of manufacture |
| US7056757B2 (en) | 2003-11-25 | 2006-06-06 | Georgia Tech Research Corporation | Methods of forming oxide masks with submicron openings and microstructures formed thereby |
| US7825484B2 (en) | 2005-04-25 | 2010-11-02 | Analog Devices, Inc. | Micromachined microphone and multisensor and method for producing same |
| CN100452397C (zh) | 2005-11-11 | 2009-01-14 | 台湾积体电路制造股份有限公司 | 半导体结构与隔绝一第一电路和一第二电路的方法 |
| US8085964B2 (en) | 2006-05-22 | 2011-12-27 | Audio Pixels Ltd. | Apparatus and methods for generating pressure waves |
| JP4737140B2 (ja) | 2006-10-20 | 2011-07-27 | セイコーエプソン株式会社 | Ｍｅｍｓデバイスおよびその製造方法 |
| CN101953174B (zh) | 2007-11-21 | 2014-12-10 | 奥迪欧彼塞尔斯有限公司 | 数字扬声器装置 |
| US8125046B2 (en) | 2008-06-04 | 2012-02-28 | Infineon Technologies Ag | Micro-electromechanical system devices |
| US8148790B2 (en) | 2008-07-08 | 2012-04-03 | Wispry, Inc. | Thin-film lid MEMS devices and methods |
| ES2342872B1 (es) | 2009-05-20 | 2011-05-30 | Baolab Microsystems S.L. | Chip que comprende un mems dispuesto en un circuito integrado y procedimiento de fabricacion correspondiente. |
| US8563345B2 (en) * | 2009-10-02 | 2013-10-22 | National Semiconductor Corporated | Integration of structurally-stable isolated capacitive micromachined ultrasonic transducer (CMUT) array cells and array elements |
| JP5218497B2 (ja) | 2009-12-04 | 2013-06-26 | 株式会社デンソー | 半導体装置およびその製造方法 |
| IT1400096B1 (it) * | 2010-05-12 | 2013-05-17 | St Microelectronics Srl | Processo di fabbricazione di circuiti elettronici integrati e circuiti cosi' ottenuti |
| US8673756B2 (en) | 2011-04-14 | 2014-03-18 | Robert Bosch Gmbh | Out-of-plane spacer defined electrode |
-
2013
- 2013-08-17 US US13/969,522 patent/US10160632B2/en active Active
- 2013-08-20 DE DE112013004119.7T patent/DE112013004119B4/de active Active
- 2013-08-20 WO PCT/US2013/055668 patent/WO2014031570A1/en not_active Ceased
- 2013-08-20 JP JP2015528561A patent/JP6272329B2/ja active Active
- 2013-08-20 CN CN201380048541.5A patent/CN104736469B/zh active Active
- 2013-08-22 TW TW102130179A patent/TWI623027B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI253436B (en) * | 2004-02-27 | 2006-04-21 | Opus Microsystems Corp | Micromechanical actuator with multiple-plane comb electrodes and methods of making |
| CN100339738C (zh) * | 2004-03-12 | 2007-09-26 | 先进微系统科技股份有限公司 | 具有多组梳状电极的微机电致动器及其制造方法 |
| DE102010062555A1 (de) * | 2010-12-08 | 2012-06-14 | Robert Bosch Gmbh | Mikromechanische Membranvorrichtung und entsprechendes Herstellungsverfahren |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112013004119T5 (de) | 2015-05-28 |
| JP6272329B2 (ja) | 2018-01-31 |
| CN104736469A (zh) | 2015-06-24 |
| US20140054730A1 (en) | 2014-02-27 |
| WO2014031570A1 (en) | 2014-02-27 |
| JP2015527211A (ja) | 2015-09-17 |
| CN104736469B (zh) | 2017-12-26 |
| TW201417152A (zh) | 2014-05-01 |
| US10160632B2 (en) | 2018-12-25 |
| DE112013004119B4 (de) | 2024-09-19 |
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