DE112013004119B4 - System und verfahren zum ausbilden einer vergrabenen unteren elektrode in verbindung mit einer verkapselten mems-vorrichtung - Google Patents

System und verfahren zum ausbilden einer vergrabenen unteren elektrode in verbindung mit einer verkapselten mems-vorrichtung Download PDF

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Publication number
DE112013004119B4
DE112013004119B4 DE112013004119.7T DE112013004119T DE112013004119B4 DE 112013004119 B4 DE112013004119 B4 DE 112013004119B4 DE 112013004119 T DE112013004119 T DE 112013004119T DE 112013004119 B4 DE112013004119 B4 DE 112013004119B4
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layer
contact
electrode
silicon
doped region
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German (de)
English (en)
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DE112013004119T5 (de
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Andrew B. Graham
Ando Feyh
Gary O'Brien
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Feyh Ando De
Graham Andrew B Redwood City Us
O'brien Gary Palo Alto Us
Robert Bosch GmbH
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Robert Bosch GmbH
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/092—Buried interconnects in the substrate or in the lid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/094—Feed-through, via
    • B81B2207/095—Feed-through, via through the lid

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE112013004119.7T 2012-08-21 2013-08-20 System und verfahren zum ausbilden einer vergrabenen unteren elektrode in verbindung mit einer verkapselten mems-vorrichtung Active DE112013004119B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261691662P 2012-08-21 2012-08-21
US61/691,662 2012-08-21
PCT/US2013/055668 WO2014031570A1 (en) 2012-08-21 2013-08-20 System and method for forming a buried lower electrode in conjunction with an encapsulated mems device

Publications (2)

Publication Number Publication Date
DE112013004119T5 DE112013004119T5 (de) 2015-05-28
DE112013004119B4 true DE112013004119B4 (de) 2024-09-19

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Application Number Title Priority Date Filing Date
DE112013004119.7T Active DE112013004119B4 (de) 2012-08-21 2013-08-20 System und verfahren zum ausbilden einer vergrabenen unteren elektrode in verbindung mit einer verkapselten mems-vorrichtung

Country Status (6)

Country Link
US (1) US10160632B2 (https=)
JP (1) JP6272329B2 (https=)
CN (1) CN104736469B (https=)
DE (1) DE112013004119B4 (https=)
TW (1) TWI623027B (https=)
WO (1) WO2014031570A1 (https=)

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DE102012210049A1 (de) * 2012-06-14 2013-12-19 Robert Bosch Gmbh Hybrid integriertes Bauteil und Verfahren zu dessen Herstellung
WO2014123922A1 (en) 2013-02-05 2014-08-14 Butterfly Network, Inc. Cmos ultrasonic transducers and related apparatus and methods
CN105174203B (zh) * 2014-05-28 2016-09-28 无锡华润上华半导体有限公司 基于mems的传感器的制作方法
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
DE102015203393A1 (de) * 2015-02-25 2016-08-25 Infineon Technologies Ag Halbleiterelement und Verfahren zu Herstellen von diesem
CN105540528A (zh) * 2015-12-14 2016-05-04 中国科学院半导体研究所 Mems电容式超声波传感器及其制备方法
EP3397587B1 (en) * 2015-12-30 2019-11-20 Robert Bosch GmbH System and method for maintaining a smoothed surface on a mems device
US10513429B2 (en) * 2016-07-27 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Integration scheme for microelectromechanical systems (MEMS) devices and complementary metal-oxide-semiconductor (CMOS) devices
US10196261B2 (en) 2017-03-08 2019-02-05 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
EP3642611B1 (en) 2017-06-21 2024-02-14 Butterfly Network, Inc. Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections
US10466126B2 (en) * 2018-02-27 2019-11-05 Globalfoundries Inc. MEMS capacitive pressure sensors in fully depleted semiconductor on insulator (FDSOI)
DE102018210815A1 (de) * 2018-06-30 2020-01-02 Robert Bosch Gmbh Elektrische Kontaktierung, Verfahren zur Herstellung einer elektrischen Kontaktierung, System
EP3885042A1 (en) 2020-03-24 2021-09-29 Imec VZW Method for fabricating a microfluidic device
IT202000011755A1 (it) * 2020-05-20 2021-11-20 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo micro-elettro-meccanico, in particolare sensore di movimento con comando/rilevazione di tipo capacitivo, e relativo dispositivo mems
DE102022208515A1 (de) * 2022-08-17 2024-02-22 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Siliziumschichtsystems mit elektrischen Verbindungen
DE102022208514A1 (de) * 2022-08-17 2024-02-22 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von mikroelektromechanischen Strukturen

Citations (4)

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DE60035179T2 (de) 2000-04-28 2008-02-21 Stmicroelectronics S.R.L., Agrate Brianza Struktur zur elektrischen Verbindung eines ersten mit einem darüberliegenden zweiten Halbleitermaterial, diese elektrische Verbindung verwendendes Komposit und ihre Herstellung
DE102009021244A1 (de) 2008-06-04 2009-12-17 Infineon Technologies Ag Mikroelektromechanische System-Bauelemente
DE102010062419A1 (de) 2009-12-04 2011-06-09 Denso Corporation, Kariya-City Bereichsunterteiltes Substrat und Halbleiterbauelement
DE102010062555A1 (de) 2010-12-08 2012-06-14 Robert Bosch Gmbh Mikromechanische Membranvorrichtung und entsprechendes Herstellungsverfahren

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US6664126B1 (en) 1999-09-03 2003-12-16 University Of Maryland, College Park Process for fabrication of 3-dimensional micromechanisms
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US7056757B2 (en) 2003-11-25 2006-06-06 Georgia Tech Research Corporation Methods of forming oxide masks with submicron openings and microstructures formed thereby
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US8085964B2 (en) 2006-05-22 2011-12-27 Audio Pixels Ltd. Apparatus and methods for generating pressure waves
JP4737140B2 (ja) 2006-10-20 2011-07-27 セイコーエプソン株式会社 Ｍｅｍｓデバイスおよびその製造方法
CN101953174B (zh) 2007-11-21 2014-12-10 奥迪欧彼塞尔斯有限公司 数字扬声器装置
US8148790B2 (en) 2008-07-08 2012-04-03 Wispry, Inc. Thin-film lid MEMS devices and methods
ES2342872B1 (es) 2009-05-20 2011-05-30 Baolab Microsystems S.L. Chip que comprende un mems dispuesto en un circuito integrado y procedimiento de fabricacion correspondiente.
US8563345B2 (en) * 2009-10-02 2013-10-22 National Semiconductor Corporated Integration of structurally-stable isolated capacitive micromachined ultrasonic transducer (CMUT) array cells and array elements
IT1400096B1 (it) * 2010-05-12 2013-05-17 St Microelectronics Srl Processo di fabbricazione di circuiti elettronici integrati e circuiti cosi' ottenuti
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60035179T2 (de) 2000-04-28 2008-02-21 Stmicroelectronics S.R.L., Agrate Brianza Struktur zur elektrischen Verbindung eines ersten mit einem darüberliegenden zweiten Halbleitermaterial, diese elektrische Verbindung verwendendes Komposit und ihre Herstellung
DE102009021244A1 (de) 2008-06-04 2009-12-17 Infineon Technologies Ag Mikroelektromechanische System-Bauelemente
DE102010062419A1 (de) 2009-12-04 2011-06-09 Denso Corporation, Kariya-City Bereichsunterteiltes Substrat und Halbleiterbauelement
DE102010062555A1 (de) 2010-12-08 2012-06-14 Robert Bosch Gmbh Mikromechanische Membranvorrichtung und entsprechendes Herstellungsverfahren

Also Published As

Publication number Publication date
DE112013004119T5 (de) 2015-05-28
JP6272329B2 (ja) 2018-01-31
CN104736469A (zh) 2015-06-24
US20140054730A1 (en) 2014-02-27
WO2014031570A1 (en) 2014-02-27
JP2015527211A (ja) 2015-09-17
TWI623027B (zh) 2018-05-01
CN104736469B (zh) 2017-12-26
TW201417152A (zh) 2014-05-01
US10160632B2 (en) 2018-12-25

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Owner name: ROBERT BOSCH GMBH, DE

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