JP6255417B2 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
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- JP6255417B2 JP6255417B2 JP2015549174A JP2015549174A JP6255417B2 JP 6255417 B2 JP6255417 B2 JP 6255417B2 JP 2015549174 A JP2015549174 A JP 2015549174A JP 2015549174 A JP2015549174 A JP 2015549174A JP 6255417 B2 JP6255417 B2 JP 6255417B2
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H01L31/0236—Special surface textures
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
3・・・・・・・・・・・・・・・・・・・・・量子ドット
3a・・・・・・・・・・・・・・・・・・・・突出量子ドット
4・・・・・・・・・・・・・・・・・・・・・障壁部
5・・・・・・・・・・・・・・・・・・・・・量子ドット含有層
5a・・・・・・・・・・・・・・・・・・・・基礎部
7・・・・・・・・・・・・・・・・・・・・・(量子ドット含有層の)表面
9、113・・・・・・・・・・・・・・・・・光(太陽光)
10、20、30、30A、30B・・・・・・光電変換装置
11、101・・・・・・・・・・・・・・・・基板
13a、24a、103・・・・・・・・・・・p側電極
13b、24b、111・・・・・・・・・・・n側電極
15、25、105・・・・・・・・・・・・・第1の半導体層
17、107・・・・・・・・・・・・・・・・光検知層
18、26、109・・・・・・・・・・・・・第2の半導体層
19、27、37・・・・・・・・・・・・・・接合層
33、33A、33B・・・・・・・・・・・・集電層
33a・・・・・・・・・・・・・・・・・・・(集電層の)表面
35・・・・・・・・・・・・・・・・・・・・凹凸
35a・・・・・・・・・・・・・・・・・・・凹部
35b・・・・・・・・・・・・・・・・・・・凸部
C・・・・・・・・・・・・・・・・・・・・・コア部
P・・・・・・・・・・・・・・・・・・・・・複合粒子
S・・・・・・・・・・・・・・・・・・・・・シェル部
H・・・・・・・・・・・・・・・・・・・・・空隙
e・・・・・・・・・・・・・・・・・・・・・電子
h・・・・・・・・・・・・・・・・・・・・・ホール
L・・・・・・・・・・・・・・・・・・・・・直線
Claims (15)
- 光電変換層を有する光検知層を具備して構成されている光電変換装置であって、
前記光電変換層は、複数の量子ドットおよび該量子ドットを取り囲む障壁部を有する量子ドット含有層を備え、前記量子ドット含有層の厚み方向の断面において、複数の前記量子ドットが前記量子ドット含有層の表面に沿って隣接して並んでおり、該隣接する3個の量子ドットを抽出し、両側に位置する2個の量子ドットの前記表面側の端を結ぶ直線を引いたときに、中央に位置する量子ドットが、前記直線から前記表面側に、その中央に位置する量子ドットの直径の1/2以上突出している突出量子ドットを複数有しており、かつ、前記量子ドット含有層の表面を平面視したときに、複数の前記突出量子ドットが曲線状に並んでおり、
前記光検知層は、前記光電変換層の表面に集電層を配置して構成されており、該集電層は前記光電変換層側の表面に凹部および凸部を有していることを特徴とする光電変換装置。 - 前記光電変換層は、前記量子ドット含有層の表面を平面視したときに、前記突出量子ドットが離間して配置されていることを特徴とする請求項1に記載の光電変換装置。
- 前記光電変換層は、前記量子ドット含有層における前記量子ドットと前記突出量子ドットとは、同じ主成分を有するものであることを特徴とする請求項1または2に記載の光電変換装置。
- 前記光電変換層は、前記量子ドット含有層における前記量子ドットと前記突出量子ドットとは、前記障壁部により被覆されており、前記量子ドットと前記障壁部、および前記突出量子ドットと前記障壁部でそれぞれコアシェル型の複合粒子をなしていることを特徴とする請求項1乃至3のうちいずれかに記載の光電変換装置。
- 前記光電変換層は、前記量子ドット含有層における前記量子ドットがファンデルワールス力によって結合していることを特徴とする請求項1乃至4のうちいずれかに記載の光電変換装置。
- 前記光電変換層は、前記量子ドット含有層における前記量子ドット間に空隙を有していることを特徴とする請求項1乃至5のうちいずれかに記載の光電変換装置。
- 前記光電変換層は、前記量子ドット含有層における前記量子ドットは、その平均粒径が前記量子ドット含有層の厚み方向で異なっていることを特徴とする請求項1乃至6のうちいずれかに記載の光電変換装置。
- 前記量子ドット含有層は、その厚み方向に上層、中央層および下層を有しており、前記上層および前記下層の平均粒径が、前記中央層の平均粒径よりも小さいことを特徴とする請求項7に記載の光電変換装置。
- 前記光検知層は、さらに第1の半導体層および第2の半導体層を具備することを特徴とする請求項1に記載の光電変換装置。
- 前記量子ドット含有層は、p型の量子ドットを有する量子ドット含有層とn型の量子ドットを有する量子ドット含有層とを有していることを特徴とする請求項1乃至9のうちいずれかに記載の光電変換装置。
- 前記突出量子ドットが入射光側に位置するように前記光電変換層が設けられていることを特徴とする請求項1乃至10のうちいずれかに記載の光電変換装置。
- 前記集電層の厚み方向における前記凸部の断面が山切り状であることを特徴とする請求項1乃至11のうちいずれかに記載の光電変換装置。
- 前記凸部は、前記光電変換層側から前記集電層を平面視したときに、曲線状に並んでいることを特徴とする請求項1乃至12のうちいずれかに記載の光電変換装置。
- 前記光電変換層の前記突出量子ドットに前記集電層の前記凹部がかみ合うように配置されていることを特徴とする請求項1乃至13のうちいずれかに記載の光電変換装置。
- 前記集電層が、前記光電変換層を挟むように配置されていることを特徴とする請求項1乃至14のうちいずれかに記載の光電変換装置。
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PCT/JP2014/080648 WO2015076300A1 (ja) | 2013-11-19 | 2014-11-19 | 光電変換層および光電変換装置 |
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US7442320B2 (en) * | 2004-06-18 | 2008-10-28 | Ultradots, Inc. | Nanostructured materials and photovoltaic devices including nanostructured materials |
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