JP6246685B2 - 静電チャック機構、基板処理方法及び半導体基板処理装置 - Google Patents
静電チャック機構、基板処理方法及び半導体基板処理装置 Download PDFInfo
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- H01L21/02104—Forming layers
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- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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Description
旨を逸脱しない範囲で構成要素を変形して具体化できる。また、上記実施形態に開示され
ている複数の構成要素の適宜な組み合わせにより、種々の発明を形成できる。例えば、実
施形態に示される全構成要素から幾つかの構成要素を削除してもよい。さらに、異なる実
施形態にわたる構成要素を適宜組み合わせてもよい。以下に、本願出願の当初の特許請求の範囲に記載された発明を付記する。
[1]半導体基板を吸着する静電チャック機構において、平板状のステージと、このステージに設けられ、静電気力を生じさせる電極と、前記ステージに設けられ、ステージ上面にガスを供給して前記半導体基板の下面の温度調整を行うガス供給部と、前記半導体基板の吸着時に前記ガスの温度調整を行う温度調整部と、前記ステージに設けられ、前記半導体基板を上下動させる基板上下動機構とを備えている静電チャック機構。
[2]前記温度調整部は、前記半導体基板が前記ステージから離間している場合と、前記半導体基板が前記ステージに吸着されている場合とで前記ガスの温度を変更するものである[1]に記載の静電チャック機構。
[3]前記半導体基板の一方の面には樹脂層が形成されている[1]に記載の静電チャック機構。
[4]半導体基板を処理する処理方法において、平板状のステージ上に前記半導体基板を載置し、前記半導体基板の吸着時に前記ステージと前記半導体基板との間に温度調整されたガスを供給し、前記ステージに静電気力を生じさせ、前記半導体基板を前記ステージ上に吸着し、前記ステージに吸着された前記半導体基板に所定の処理を行う基板処理方法。
[5]前記半導体基板の一方の面には樹脂層が形成されている[4]に記載の基板処理方法。
[6]半導体基板に処理を行う半導体処理装置において、前記半導体基板に処理をするための処理容器と、前記処理容器内で半導体処理を行うための半導体処理部と、前記処理容器内に設けられた平板状のステージと、このステージに設けられ、静電気力を生じさせる電極と、前記ステージに設けられ、ステージ上面にガスを供給するガス供給部と、前記半導体基板の吸着時に前記ガスの温度調整を行う温度調整部と、前記ステージに設けられ、前記半導体基板を上下動させる基板上下動機構とを備えていることを特徴とする半導体基板処理装置。
[7]前記半導体基板の一方の面には樹脂層が形成されている[6]に記載の半導体基板処理装置。
Claims (10)
- 半導体基板を吸着する静電チャック機構において、
平板状のステージと、
このステージに設けられ、静電気力を生じさせる電極と、
前記ステージに設けられ、ステージ上面にガスを供給して前記半導体基板の下面の温度調整を行うガス供給部と、
前記ガスの温度調整を行う温度調整部と、
前記ステージに設けられ、前記半導体基板を上下動させる基板上下動機構とを具備し、
前記温度調整部は、前記ガスの温度を、前記半導体基板の吸着前に前記半導体基板の歪みを矯正する温度に調整し、前記ガス供給部から供給される前記調整されたガスによって、前記半導体基板の歪みを矯正することを特徴とする静電チャック機構。 - 前記温度調整部は、前記半導体基板が前記ステージから離間している場合と、前記半導体基板が前記ステージに吸着されている場合とで前記ガスの温度を変更するものであることを特徴とする請求項1に記載の静電チャック機構。
- 前記半導体基板の一方の面には樹脂層が形成されていることを特徴とする請求項1に記載の静電チャック機構。
- 前記ステージ上面に供給された前記ガスの温度を計測する温度センサが、前記基板上下動機構の前記半導体基板を下面において支持する部分に設けられていることを特徴とする請求項1に記載の静電チャック機構。
- 半導体基板を処理する処理方法において、
平板状のステージ上に前記半導体基板を載置し、
前記半導体基板の吸着前に前記ステージと前記半導体基板との間に前記半導体基板の歪みを矯正するガスの温度に温度調整されたガスを供給することによって、前記半導体基板の歪みを矯正し、
前記ステージに静電気力を生じさせ、前記半導体基板を前記ステージ上に吸着し、
前記ステージに吸着された前記半導体基板に所定の処理を行う基板処理方法。 - 前記半導体基板の一方の面には樹脂層が形成されていることを特徴とする請求項5に記載の基板処理方法。
- 前記ステージ上面に供給された前記ガスの温度を計測することを特徴とする請求項5に記載の基板処理方法。
- 半導体基板に処理を行う半導体処理装置において、
前記半導体基板に処理をするための処理容器と、
前記処理容器内で半導体処理を行うための半導体処理部と、
前記処理容器内に設けられた平板状のステージと、
このステージに設けられ、静電気力を生じさせる電極と、
前記ステージに設けられ、ステージ上面にガスを供給するガス供給部と、
前記ガスの温度調整を行う温度調整部と、
前記ステージに設けられ、前記半導体基板を上下動させる基板上下動機構とを具備し、
前記温度調整部は、前記ガスの温度を、前記半導体基板の吸着前に前記半導体基板の歪みを矯正する温度に調整し、前記ガス供給部から供給される前記調整されたガスによって、前記半導体基板の歪みを矯正することを特徴とする半導体基板処理装置。 - 前記半導体基板の一方の面には樹脂層が形成されていることを特徴とする請求項8に記載の半導体基板処理装置。
- 前記ステージ上面に供給された前記ガスの温度を計測する温度センサが、前記基板上下動機構の前記半導体基板の下面において支持する部分に設けられていることを特徴とする請求項8に記載の半導体基板処理装置。
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JP2014187028A JP6246685B2 (ja) | 2014-09-12 | 2014-09-12 | 静電チャック機構、基板処理方法及び半導体基板処理装置 |
US14/842,209 US20160079108A1 (en) | 2014-09-12 | 2015-09-01 | Electrostatic chuck mechanism, substrate processing method and semiconductor substrate processing apparatus |
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JP6320812B2 (ja) * | 2014-03-19 | 2018-05-09 | 株式会社東芝 | 圧力センサの製造方法、成膜装置及び熱処理装置 |
KR102222455B1 (ko) * | 2018-01-15 | 2021-03-04 | 세메스 주식회사 | 기판 처리 장치 |
JP6948574B2 (ja) * | 2018-05-31 | 2021-10-13 | パナソニックIpマネジメント株式会社 | フラットパネルディスプレイ基板位置調整装置およびフラットパネルディスプレイ基板位置調整方法 |
CN112899662A (zh) * | 2019-12-04 | 2021-06-04 | 江苏菲沃泰纳米科技股份有限公司 | Dlc制备装置和制备方法 |
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JPS53104162A (en) * | 1977-02-23 | 1978-09-11 | Hitachi Ltd | Forming method for epitaxial layer on semiconductor wafer |
JPH07249586A (ja) * | 1993-12-22 | 1995-09-26 | Tokyo Electron Ltd | 処理装置及びその製造方法並びに被処理体の処理方法 |
JPH07231034A (ja) * | 1994-02-17 | 1995-08-29 | Hitachi Ltd | 板状物の固定方法および装置ならびにプラズマ処理装置 |
DE69842191D1 (de) * | 1997-11-05 | 2011-05-05 | Tokyo Electron Ltd | Halbleiterscheibenhaltevorrichtung |
US6866094B2 (en) * | 1997-12-31 | 2005-03-15 | Temptronic Corporation | Temperature-controlled chuck with recovery of circulating temperature control fluid |
JP2000031253A (ja) * | 1998-07-10 | 2000-01-28 | Komatsu Ltd | 基板処理装置及び方法 |
JP2002217180A (ja) * | 2001-10-12 | 2002-08-02 | Hitachi Ltd | 基板の真空処理方法 |
JP2003128499A (ja) * | 2001-10-18 | 2003-05-08 | Hitachi Cable Ltd | 窒化物結晶基板の製造方法及び窒化物結晶基板 |
US20040055709A1 (en) * | 2002-09-19 | 2004-03-25 | Applied Materials, Inc. | Electrostatic chuck having a low level of particle generation and method of fabricating same |
US7230204B2 (en) * | 2003-03-28 | 2007-06-12 | Tokyo Electron Limited | Method and system for temperature control of a substrate |
US7452793B2 (en) * | 2005-03-30 | 2008-11-18 | Tokyo Electron Limited | Wafer curvature estimation, monitoring, and compensation |
JP2007329247A (ja) * | 2006-06-07 | 2007-12-20 | Nikon Corp | 静電チャック装置および露光装置 |
JP4805741B2 (ja) * | 2006-07-14 | 2011-11-02 | Okiセミコンダクタ株式会社 | 半導体製造装置および半導体装置の製造方法 |
TWI448826B (zh) * | 2007-06-21 | 2014-08-11 | Asml Netherlands Bv | 將基板載於基板台上之方法,器件製造方法,電腦程式,資料載體及裝置 |
JP5635378B2 (ja) * | 2010-11-30 | 2014-12-03 | 日東電工株式会社 | 半導体ウエハ搬送方法および半導体ウエハ搬送装置 |
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