JP6244455B2 - 半導体基板上に提供されるフォトニック結晶下部クラッド層を有するフォトニックデバイス - Google Patents
半導体基板上に提供されるフォトニック結晶下部クラッド層を有するフォトニックデバイス Download PDFInfo
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- JP6244455B2 JP6244455B2 JP2016523782A JP2016523782A JP6244455B2 JP 6244455 B2 JP6244455 B2 JP 6244455B2 JP 2016523782 A JP2016523782 A JP 2016523782A JP 2016523782 A JP2016523782 A JP 2016523782A JP 6244455 B2 JP6244455 B2 JP 6244455B2
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- 239000000758 substrate Substances 0.000 title claims description 79
- 239000004038 photonic crystal Substances 0.000 title claims description 43
- 238000005253 cladding Methods 0.000 title claims description 34
- 239000004065 semiconductor Substances 0.000 title claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 230000003287 optical effect Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 21
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 4
- 239000011162 core material Substances 0.000 description 44
- 239000010410 layer Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 239000003989 dielectric material Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- -1 i.e. Chemical compound 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000013079 quasicrystal Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
Claims (19)
- 半導体基板と、
前記基板内に形成された複数の離隔された材料領域を含む、前記基板内に形成された光学クラッドと、
前記光学クラッド上に形成されたコアを含む導波路と、
を含み、
前記コアは半導体材料を含み、
前記導波路は、前記コアの側面および上部表面上にさらなるクラッドをさらに含む、
ことを特徴とする集積構造。 - 前記さらなるクラッドは酸化物材料を含む、
ことを特徴とする請求項1に記載の集積構造。 - 前記酸化物材料は二酸化シリコンを含む、
ことを特徴とする請求項2に記載の集積構造。 - 前記さらなるクラッドはBPSGまたはPSGを含む、
ことを特徴とする請求項1に記載の集積構造。 - 半導体基板と、
前記基板内に形成された複数の離隔された材料領域を含む、前記基板内に形成された光学クラッドと、
前記光学クラッド上に形成されたコアを含む導波路と、
を含み、
前記コアは、高さ(h)および幅(w)を有し、(w)≧3hである、
ことを特徴とする集積構造。 - 前記光学クラッドはフォトニック結晶を含み、前記フォトニック結晶は、0.54μmの平均周期(a)を有する、
ことを特徴とする請求項5に記載の集積構造。 - (h)は3.3μmにほぼ等しい、
ことを特徴とする請求項5に記載の集積構造。 - シリコン基板内にフォトニック結晶として形成された下部クラッドと、前記下部クラッド上に形成されたエピタキシャル結晶シリコンで形成されたコアと、前記コアの側面および上に形成された酸化物クラッドと、を含む光学導波路を含む、
ことを特徴とする集積構造。 - 前記フォトニック結晶は一次元フォトニック結晶である、
ことを特徴とする請求項8に記載の集積構造。 - 前記フォトニック結晶は二次元フォトニック結晶である、
ことを特徴とする請求項8に記載の集積構造。 - 前記フォトニック結晶は三次元フォトニック結晶である、
ことを特徴とする請求項8に記載の集積構造。 - 前記フォトニック結晶は、前記シリコン基板内の離隔された材料領域を含む、
ことを特徴とする請求項8に記載の集積構造。 - 前記材料領域は、前記シリコン基板内で周期的に離隔される、
ことを特徴とする請求項12に記載の集積構造。 - 前記材料領域は、前記シリコン基板内で準周期的に離隔される、
ことを特徴とする請求項12に記載の集積構造。 - 前記基板はその厚さの全体にわたってシリコンを含む、
ことを特徴とする請求項8に記載の集積構造。 - 前記基板上に集積された電子デバイスをさらに含む、
ことを特徴とする請求項8に記載の集積構造。 - 前記フォトニック結晶は、前記光学導波路を通る光路の方向に複数の連続する単位セルを含み、前記単位セルに対して(a)の平均周期を提供する、
ことを特徴とする請求項8に記載の集積構造。 - (a)は、約0.54μmの値を有する、
ことを特徴とする請求項17に記載の集積構造。 - 前記光学導波路は、断面幅wおよび高さhを有し、w≧3hである、
ことを特徴とする請求項8に記載の集積構造。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/927,306 US10718901B2 (en) | 2013-06-26 | 2013-06-26 | Photonic device having a photonic crystal lower cladding layer provided on a semiconductor substrate |
US13/927,306 | 2013-06-26 | ||
PCT/US2014/042496 WO2014209652A1 (en) | 2013-06-26 | 2014-06-16 | A photonic device having a photonic crystal lower cladding layer provided on a semiconductor substrate |
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JP2016528534A JP2016528534A (ja) | 2016-09-15 |
JP6244455B2 true JP6244455B2 (ja) | 2017-12-06 |
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US (3) | US10718901B2 (ja) |
EP (1) | EP3014666B1 (ja) |
JP (1) | JP6244455B2 (ja) |
KR (1) | KR101842806B1 (ja) |
CN (2) | CN105393368A (ja) |
TW (2) | TWI634649B (ja) |
WO (1) | WO2014209652A1 (ja) |
Families Citing this family (5)
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US9946018B1 (en) | 2017-03-21 | 2018-04-17 | International Business Machines Corporation | Surface-guiding photonic device with tempered glass |
US11616344B2 (en) * | 2020-05-04 | 2023-03-28 | International Business Machines Corporation | Fabrication of semiconductor structures |
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2013
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2014
- 2014-06-16 CN CN201480036559.8A patent/CN105393368A/zh active Pending
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- 2014-06-16 CN CN202010284747.XA patent/CN111367015B/zh active Active
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TW201513323A (zh) | 2015-04-01 |
US20200341195A1 (en) | 2020-10-29 |
EP3014666A4 (en) | 2017-02-08 |
EP3014666A1 (en) | 2016-05-04 |
CN105393368A (zh) | 2016-03-09 |
TW201838162A (zh) | 2018-10-16 |
EP3014666B1 (en) | 2020-09-16 |
US11550101B2 (en) | 2023-01-10 |
JP2016528534A (ja) | 2016-09-15 |
CN111367015B (zh) | 2022-06-28 |
US20150003775A1 (en) | 2015-01-01 |
US10718901B2 (en) | 2020-07-21 |
KR20160023887A (ko) | 2016-03-03 |
TWI634649B (zh) | 2018-09-01 |
US11156775B2 (en) | 2021-10-26 |
US20220043206A1 (en) | 2022-02-10 |
TWI657570B (zh) | 2019-04-21 |
CN111367015A (zh) | 2020-07-03 |
WO2014209652A1 (en) | 2014-12-31 |
KR101842806B1 (ko) | 2018-03-27 |
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