JP6239525B2 - Ｉｇｂｔのターンオフ過電圧の制限 - Google Patents

Ｉｇｂｔのターンオフ過電圧の制限 Download PDF

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Publication number
JP6239525B2
JP6239525B2 JP2014545054A JP2014545054A JP6239525B2 JP 6239525 B2 JP6239525 B2 JP 6239525B2 JP 2014545054 A JP2014545054 A JP 2014545054A JP 2014545054 A JP2014545054 A JP 2014545054A JP 6239525 B2 JP6239525 B2 JP 6239525B2
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JP
Japan
Prior art keywords
igbt
emitter
power converter
collector
parasitic inductance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2014545054A
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English (en)
Japanese (ja)
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JP2015503319A (ja
Inventor
ジャン−マルク・カー
マーライニン・エル・ヤコウビ
モハメッド・アマール
パスカル・フルリー
Original Assignee
ティーエム４・インコーポレーテッド
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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0029—Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Inverter Devices (AREA)
JP2014545054A 2011-12-07 2012-12-05 Ｉｇｂｔのターンオフ過電圧の制限 Expired - Fee Related JP6239525B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161567800P 2011-12-07 2011-12-07
US61/567,800 2011-12-07
PCT/CA2012/001125 WO2013082705A1 (en) 2011-12-07 2012-12-05 Turn-off overvoltage limiting for igbt

Publications (2)

Publication Number Publication Date
JP2015503319A JP2015503319A (ja) 2015-01-29
JP6239525B2 true JP6239525B2 (ja) 2017-11-29

Family

ID=48573450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014545054A Expired - Fee Related JP6239525B2 (ja) 2011-12-07 2012-12-05 Ｉｇｂｔのターンオフ過電圧の制限

Country Status (8)

Country Link
US (2) US9608543B2 (enExample)
EP (1) EP2789092B1 (enExample)
JP (1) JP6239525B2 (enExample)
CN (1) CN103988410B (enExample)
BR (1) BR112014012206A2 (enExample)
CA (1) CA2851376C (enExample)
IN (1) IN2014DN03024A (enExample)
WO (1) WO2013082705A1 (enExample)

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BR112014012206A2 (pt) * 2011-12-07 2017-05-30 Tm4 Inc limitador de sobretensão de desligamento para igbt
US9112501B2 (en) 2012-09-29 2015-08-18 Infineon Technologies Ag Electronic circuit with an electronic switch and a monitoring circuit
EP2982038B1 (en) 2013-04-04 2019-06-19 TM4 Inc. Commutation cell and compensation circuit therefor
JP6556712B2 (ja) * 2013-11-01 2019-08-07 ティーエム４・インコーポレーテッド スイッチング過電圧を制限するように構成された電力変換器
US9768693B2 (en) 2013-11-14 2017-09-19 Tm4 Inc. Compensation circuit, commutation cell and power converter controlling turn-on and turn-off of a power electronic switch
CN105814781B (zh) * 2013-11-14 2018-10-12 Tm4股份有限公司 换向单元、电力变换器和具有动态控制的电压增益的补偿电路
KR20180019610A (ko) * 2015-06-23 2018-02-26 티엠4 인코포레이티드 전력 변환기를 위한 물리 토폴로지
US9812941B2 (en) 2015-09-11 2017-11-07 Nxp Usa, Inc. High power driver having multiple turn off modes
KR20180052624A (ko) * 2015-09-14 2018-05-18 티엠4 인코포레이티드 스위칭 과전압을 제한하는 구성의 전력 변환기
CN107154791A (zh) * 2016-03-02 2017-09-12 国网辽宁省电力有限公司电力科学研究院 高压大功率igbt模块的电流上升斜率检测电路及其检测方法
US10122294B2 (en) 2016-12-01 2018-11-06 Ford Global Technologies, Llc Active gate clamping for inverter switching devices with enhanced common source inductance
US9866099B1 (en) * 2016-12-30 2018-01-09 Texas Instruments Incorporated Adaptive high-side gate drive for ringing mitigation in switching power converters
JP7341885B2 (ja) * 2019-12-27 2023-09-11 川崎重工業株式会社 スイッチング回路
US12341412B2 (en) * 2021-03-19 2025-06-24 Mitsubishi Electric Corporation Direct-current power supply, refrigeration cycler, air conditioner, and refrigerator
WO2023001995A1 (fr) * 2021-07-21 2023-01-26 Valeo Systemes De Controle Moteur Systeme de commutation et convertisseur de tension ou engin de mobilite comprenant un tel systeme de commutation

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JP3379556B2 (ja) * 1993-12-30 2003-02-24 サンケン電気株式会社 スイッチング素子を有する回路装置
KR100337035B1 (ko) * 1999-11-26 2002-05-16 권영한 전력용 반도체 스위칭 소자의 직렬구동을 위한 수동형보조회로
JP3598933B2 (ja) 2000-02-28 2004-12-08 株式会社日立製作所 電力変換装置
JP3932841B2 (ja) * 2001-08-29 2007-06-20 株式会社日立製作所 半導体電力変換装置
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JP3975162B2 (ja) * 2002-12-20 2007-09-12 トヨタ自動車株式会社 インバータ装置およびそれを用いた電動機一体インバータ装置
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JP4432953B2 (ja) * 2006-09-27 2010-03-17 株式会社日立製作所 半導体電力変換装置
JP5289565B2 (ja) * 2009-05-19 2013-09-11 三菱電機株式会社 ゲート駆動回路
US8149600B2 (en) 2009-05-22 2012-04-03 Infineon Technologies Ag System and method for ringing suppression in a switched mode power supply
JP5315155B2 (ja) * 2009-07-23 2013-10-16 日立オートモティブシステムズ株式会社 半導体素子制御装置、車載用電機システム
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US9768693B2 (en) * 2013-11-14 2017-09-19 Tm4 Inc. Compensation circuit, commutation cell and power converter controlling turn-on and turn-off of a power electronic switch
CN105814781B (zh) * 2013-11-14 2018-10-12 Tm4股份有限公司 换向单元、电力变换器和具有动态控制的电压增益的补偿电路
EP3079245B1 (en) * 2013-12-03 2017-08-30 Ingeteam Power Technology, S.A. Control system and control method for controlling a switching device integrated in an electronic converter and switching cell comprising said system

Also Published As

Publication number Publication date
IN2014DN03024A (enExample) 2015-05-08
BR112014012206A2 (pt) 2017-05-30
CA2851376C (en) 2021-02-16
US20140321178A1 (en) 2014-10-30
CA2851376A1 (en) 2013-06-13
EP2789092B1 (en) 2020-02-05
WO2013082705A1 (en) 2013-06-13
EP2789092A1 (en) 2014-10-15
JP2015503319A (ja) 2015-01-29
CN103988410B (zh) 2017-10-13
US20170163172A1 (en) 2017-06-08
CN103988410A (zh) 2014-08-13
US10205405B2 (en) 2019-02-12
US9608543B2 (en) 2017-03-28
EP2789092A4 (en) 2016-05-04

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