JP6227129B2 - カラムiii−vアイソレーション領域を有する半導体構造 - Google Patents
カラムiii−vアイソレーション領域を有する半導体構造 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 121
- 238000002955 isolation Methods 0.000 title claims description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 53
- 239000010703 silicon Substances 0.000 claims description 53
- 230000004888 barrier function Effects 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 42
- 230000005540 biological transmission Effects 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 106
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 20
- 229910002601 GaN Inorganic materials 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 8
- 239000007943 implant Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Description
[0014]一実施形態では、半導体層は、シリコンであり、カラムIVデバイスは、シリコントランジスタデバイスである。
[0017]一実施形態では、マイクロ波伝送線路は、コプレーナ導波路である。
[0018]一実施形態では、受動素子は、リアクタンス素子である。
[0020]一実施形態では、CMOSトランジスタのうちの一方は、半導体層のドープした領域内に形成され、この領域は、半導体層のドーパント型とは反対のドーパント型を有する。
[0033]ここで図3A、図3B、図4A、図4B、及び図5を参照すると、デバイスインターコネクトの前(図3A、図4A、図4B)及び最終メタライゼーションの後(図3B、図5)のMMIC半導体構造10の一部が示される。構造10の一部は、カラムIII−Vトランジスタデバイス12、ここでは例えば、GaN pHEMT、受動マイクロ波素子(図3B)14、ここでは例えば、スパイラルインダクタ、の両方、ならびに非III−Vデバイス、ここではnMOSトランジスタ26及び分離したpMOSトランジスタ18を備える一対のCMOSシリコントランジスタ16を有するように示され、そのすべてが、示したように共通基板20、ここではシリコン基板上に形成される。
Claims (20)
- 基板と、
前記基板の上に配置された非カラムIII−Vドープト半導体層であり、当該半導体層内に非カラムIII−Vトランジスタが形成された半導体層と、
前記非カラムIII−Vトランジスタから横方向に離間されて前記基板の異なる領域の上に配置された、カラムIII−V材料を有するカラムIII−Vトランジスタと、
前記非カラムIII−Vトランジスタと前記カラムIII−Vトランジスタとの間で横方向に離間され、且つ前記半導体層を縦方向に貫いて配置された、カラムIII−V材料を含むアイソレーションバリアであり、前記カラムIII−Vトランジスタを、横方向に離間された前記非カラムIII−Vトランジスタから電気的に分離するアイソレーションバリアと、
前記カラムIII−Vトランジスタの底部と前記基板との間に配置されたカラムIII−V材料と
を有し、
前記カラムIII−Vトランジスタの前記底部と前記基板との間に配置された前記カラムIII−V材料は、前記アイソレーションバリアの材料と同じであり、且つ前記カラムIII−Vトランジスタの前記カラムIII−V材料とは異なる、
半導体構造。 - 前記半導体層が、シリコンであり、かつ前記基板の第1の領域の上方の前記半導体層内に配置されたCMOSトランジスタを有し、前記アイソレーションバリアが、横方向で前記CMOSトランジスタと前記カラムIII−Vトランジスタとの間に配置されて、前記カラムIII−Vトランジスタを前記CMOSトランジスタから電気的に分離する、請求項1に記載の半導体構造。
- 前記基板がシリコンであり、前記半導体層が、シリコンであり、かつ前記シリコン基板の第1の領域の上方の前記半導体層内に配置されたシリコントランジスタと前記シリコン基板の異なる領域の上方に配置されたカラムIII−Vトランジスタとを有し、前記アイソレーションバリアが、前記カラムIII−Vトランジスタを前記シリコントランジスタから電気的に分離する、請求項1に記載の半導体構造。
- 前記半導体層の上に配置された受動素子と、
複数の横方向に間隔を空けて配置されたカラムIII−V構造であって、前記受動素子の下に配置され、前記半導体層内まで縦方向に延在する、カラムIII−V構造と
を含む、請求項1に記載の半導体構造。 - 前記半導体層の上に配置された受動素子と、
前記受動素子の下に配置された複数の横方向に間隔を空けて配置されたカラムIII−V構造であって、前記半導体層内まで縦方向に延在する、カラムIII−V構造と
を含む、請求項3に記載の半導体構造。 - カラムIII−Vトランジスタデバイス及び非カラムIII−Vトランジスタデバイスを中に有する半導体構造であって、
非カラムIII−V基板と、
前記非カラムIII−V基板の上に配置された非カラムIII−V半導体層であって、前記カラムIII−Vトランジスタデバイスは、前記非カラムIII−V基板の1つの領域の上に配置されたカラムIII−V材料を有し、前記非カラムIII−Vトランジスタデバイスは、前記非カラムIII−V基板の別の領域の上の前記半導体層の領域内に配置される、非カラムIII−V半導体層と、
前記カラムIII−Vトランジスタデバイスを前記非カラムIII−Vトランジスタデバイスから電気的に分離するよう、横方向で前記カラムIII−Vトランジスタと前記非カラムIII−Vトランジスタとの間で、前記半導体層を縦方向に貫いて配置された、カラムIII−V材料のバリアと、
前記カラムIII−Vトランジスタデバイスの底部と前記基板との間に配置されたカラムIII−V材料と
を有し、
前記カラムIII−Vトランジスタデバイスの前記底部と前記基板との間に配置された前記カラムIII−V材料は、前記バリアの材料と同じであり、且つ前記カラムIII−Vトランジスタデバイスの前記カラムIII−V材料とは異なる、 半導体構造。 - 前記非カラムIII−Vトランジスタデバイスが、カラムIVトランジスタデバイスである、請求項6に記載の半導体構造。
- 前記基板がシリコンであり、前記半導体層がシリコンであり、前記カラムIVトランジスタデバイスがシリコントランジスタデバイスである、請求項7に記載の半導体構造。
- 前記半導体層内にCMOSトランジスタデバイスを形成するように前記半導体層内に第2のシリコントランジスタデバイスを含み、前記バリアが、横方向で、前記CMOSトランジスタデバイスを前記カラムIII−Vトランジスタデバイスから電気的に分離する、請求項8に記載の半導体構造。
- 前記半導体層の上に配置された受動素子と、
前記受動素子の下に配置された複数の横方向に間隔を空けて配置されたカラムIII−V構造であって、前記半導体層内まで縦方向に延在するカラムIII−V構造と
を含む、請求項9に記載の半導体構造。 - 前記受動素子が、マイクロ波伝送線路である、請求項10に記載の半導体構造。
- 前記マイクロ波伝送線路が、コプレーナ導波路である、請求項11に記載の半導体構造。
- 前記受動素子が、リアクタンス素子である、請求項10に記載の半導体構造。
- 前記リアクタンス素子が、インダクタである、請求項13に記載の半導体構造。
- 前記CMOSトランジスタデバイスのうちの一方が、前記半導体層のドープした領域内に形成され、該領域が、前記半導体層のドーパント型とは反対のドーパント型を有する、請求項9に記載の半導体構造。
- 一対のトランジスタデバイスを有し、前記一対のデバイスのうちの一方が、カラムIII−V材料を有するカラムIII−Vトランジスタデバイスであり、前記一対のトランジスタデバイスのうちの他方が非カラムIII−Vトランジスタデバイスである半導体構造であって、
非カラムIII−V基板と、
前記基板上に配置された非カラムIII−V半導体層であって、前記カラムIII−Vトランジスタデバイスが前記基板の1つの領域の上に形成され、前記非カラムIII−Vトランジスタデバイスが前記基板の別の領域の上に形成される、非カラムIII−V半導体層と、
横方向で前記カラムIII−Vトランジスタデバイスを前記非カラムIII−Vトランジスタデバイスから分離するよう、前記カラムIII−Vトランジスタデバイスの横方向で前記半導体層を縦方向に貫いて配置された、カラムIII−V材料のバリアと、
前記カラムIII−Vトランジスタデバイスの底部と前記基板との間に配置されたカラムIII−V材料と
を有し、
前記カラムIII−Vトランジスタデバイスの前記底部と前記基板との間に配置された前記カラムIII−V材料は、前記バリアの材料と同じであり、且つ前記カラムIII−Vトランジスタデバイスの前記カラムIII−V材料とは異なる、
半導体構造。 - 前記非カラムIII−Vトランジスタデバイスが、カラムIVトランジスタデバイスである、請求項16に記載の半導体構造。
- 前記半導体層が、シリコンであり、前記カラムIVトランジスタデバイスが、シリコントランジスタデバイスである、請求項17に記載の半導体構造。
- 前記半導体層の上に配置された受動素子と、
カラムIII−V構造のメッシュであって、前記カラムIII−V構造が前記受動素子の下に配置され、前記カラムIII−V構造が前記半導体層内まで縦方向に延在する、カラムIII−V構造のメッシュと
を含み、
前記カラムIII−V構造のメッシュは、前記アイソレーションバリアと同じ材料を有する、
請求項1に記載の半導体構造。 - 前記半導体層の上に配置された受動素子と、
前記受動素子の下に配置されたカラムIII−V構造のメッシュであって、前記カラムIII−V構造が前記半導体層内まで縦方向に延在する、カラムIII−V構造のメッシュと
を含み、
前記カラムIII−V構造のメッシュは、前記アイソレーションバリアと同じ材料を有する、
請求項3に記載の半導体構造。
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US13/913,635 | 2013-06-10 | ||
US13/913,635 US9356045B2 (en) | 2013-06-10 | 2013-06-10 | Semiconductor structure having column III-V isolation regions |
PCT/US2014/037809 WO2014200646A1 (en) | 2013-06-10 | 2014-05-13 | Semiconductor structure having column iii-v isolation regions |
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WO2014200646A1 (en) | 2014-12-18 |
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