JP6224266B2 - 放電発生器とその電源装置 - Google Patents
放電発生器とその電源装置 Download PDFInfo
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- 239000007789 gas Substances 0.000 claims description 314
- 230000004888 barrier function Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000009434 installation Methods 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 150000003254 radicals Chemical class 0.000 claims 17
- -1 Oxygen radical Chemical class 0.000 claims 2
- 150000002831 nitrogen free-radicals Chemical group 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 121
- 239000010408 film Substances 0.000 description 41
- 239000010409 thin film Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000003989 dielectric material Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 210000004180 plasmocyte Anatomy 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32036—AC powered
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- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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Description
図1は、電源装置を備える、本実施の形態に係るラジカルガス発生システム(放電発生器とその電源装置)500の構成例を示す図である。また、図2は、本発明に係る放電セル70の構成例を示す拡大断面図である。また、図3は、n個の出力交流電圧を出力させる手段を有した、n相インバータ電源装置9における各インバータ素子902を駆動させるための、駆動パルス周期とパルス幅信号波形と放電セル70に出力する交流電圧波形を示す1実施例図である。
2 第一の誘電体
3 第二の誘電体
4 スペーサ
5 高電圧電極ブロック
9 n相インバータ電源装置
31 高電圧電極
40 放電空間
70 放電セル
101 原料ガス供給部
102 開口部
100 ラジカルガス生成装置
200 処理チャンバー装置
201 テーブル
202 被処理体
203 ガス排出部
300 真空ポンプ
500 ラジカルガス発生システム
901 整流回路
902 インバータ素子
903 限流リアクトル
904 トランス
905 ゲート回路
906 電流検出器
907 制御回路
G1 原料ガス
G2 ラジカルガス
Claims (8)
- 誘電体バリア放電を利用して、原料ガス(G1)からラジカルガス(G2)を生成する、ラジカルガス生成装置(100)と、
前記ラジカルガス生成装置に接続されており、内部に被処理体(202)が配設されており、当該被処理体に対して前記ラジカルガスを利用した処理が実施される、処理チャンバー装置(200)と、
前記ラジカルガス生成装置に、交流電圧を印加する電源装置(9)とを、備えており、
前記処理チャンバー装置は、
前記被処理体が載置され、当該被処理体を回転させる、テーブル(201)を、有しており、
前記ラジカルガス生成装置は、
前記誘電体バリア放電を発生させる、複数の放電セル(70)と、
前記原料ガスを、当該ラジカルガス生成装置内に供給する、原料ガス供給部(101)とを、有しており、
前記放電セルは、
第一の電極部材(5,31)を有する第一の電極部(3,5,31)と、
前記第一の電極と対向して配設され、第二の電極部材(1)を有する第二の電極部(1,2)と、
前記処理チャンバー装置内と接続され、前記テーブル上に配設された前記被処理体と面しており、前記誘電体バリア放電により前記原料ガスから生成された前記ラジカルガスを出力する、開口部(102)とを、有しており、
前記電源装置は、
1つの交流電圧を入力し、かつ、n相の交流電圧を出力制御できる電源回路構成とし、各相の前記交流電圧は、各前記放電セルに印加され、前記放電セルに印加する前記交流電圧を、前記放電セルの設置位置に対応して可変制御する、
ここで、
nは、前記放電セルの数に対応した数である、
ことを特徴とする放電発生器とその電源装置。 - 前記処理チャンバー装置は、
前記被処理体を回転させる、テーブル(201)を、有しており、
前記電源装置の電源回路構成は、
n相インバータとn相トランスとを含み、
各相の前記交流電圧は、各前記放電セルに印加され、前記被処理体の平面視において、前記回転の中心位置から遠くに配設されている前記放電セルほど、当該放電セルに印加する前記交流電圧を高める、
ことを特徴とする請求項1に記載の放電発生器とその電源装置。 - 前記電源装置は、
各相に分割した直流電流を検出し、当該検出結果を用いて、前記インバータのパルス幅もしくはパルス周期を、PID制御する、
ことを特徴とする請求項1に記載の放電発生器とその電源装置。 - 前記放電セルは、
前記誘電体バリア放電が発生する放電空間に面して配設されている誘電体(2,3)を、さらに有しており、
前記誘電体は、
単結晶サファイヤまたは石英から構成されている、
ことを特徴とする請求項1に記載の放電発生器とその電源装置。 - 前記ラジカルガス生成装置において、
内部のガス圧力は、
10kPa〜30kPaであり、
前記第一の電極部と前記第二の電極部との距離は、
0.3〜3mmである、
ことを特徴とする請求項1に記載の放電発生器とその電源装置。 - 前記原料ガスは、
窒素ガスであり、
前記ラジカルガス生成装置は、
前記窒素ガスから、前記ラジカルガスとして、窒素ラジカルガスを生成し、
前記処理チャンバー装置は、
前記窒素ラジカルガスを利用して、前記被処理体に対して、窒化膜を成膜させる、
ことを特徴とする請求項1に記載の放電発生器とその電源装置。 - 前記原料ガスは、
オゾンガスもしくは酸素ガス、
前記ラジカルガス生成装置は、
前記オゾンガスもしくは酸素ガスから、前記ラジカルガスとして、酸素ラジカルガスを生成し、
前記処理チャンバー装置は、
前記酸素ラジカルガスを利用して、前記被処理体に対して、酸化膜を成膜させる、
ことを特徴とする請求項1に記載の放電発生器とその電源装置。 - 前記原料ガスは、
水素ガスもしくは水蒸気ガスであり、
前記ラジカルガス生成装置は、
前記水素ガスもしくは水蒸気ガスから、前記ラジカルガスとして、水素ラジカルガスもしくはOHラジカルガスを生成し、
前記処理チャンバー装置は、
前記水素ラジカルガスもしくはOHラジカルガスを利用して、前記被処理体に対して、水素結合を促進させた金属膜を成膜させる、
ことを特徴とする請求項1に記載の放電発生器とその電源装置。
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WO2019138453A1 (ja) * | 2018-01-10 | 2019-07-18 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置及び成膜処理装置 |
KR102024568B1 (ko) * | 2018-02-13 | 2019-09-24 | 한국기초과학지원연구원 | 환형 면방전 플라즈마 장치를 이용한 점상 식각 모듈 및 점상 식각 모듈의 식각 프로파일을 제어하는 방법 |
CN112166650B (zh) * | 2018-05-30 | 2023-06-20 | 东芝三菱电机产业系统株式会社 | 活性气体生成装置 |
JP7085963B2 (ja) * | 2018-10-29 | 2022-06-17 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
KR102577022B1 (ko) | 2019-08-22 | 2023-09-12 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 활성 가스 생성 장치 |
KR102545951B1 (ko) | 2019-11-12 | 2023-06-22 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 활성 가스 생성 장치 |
KR102524433B1 (ko) * | 2019-11-27 | 2023-04-24 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 활성 가스 생성 장치 |
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EP3214906A1 (en) | 2017-09-06 |
EP3214906A4 (en) | 2018-03-21 |
KR101913985B1 (ko) | 2018-10-31 |
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TW201616548A (zh) | 2016-05-01 |
CN107079575B (zh) | 2020-08-04 |
JPWO2016067380A1 (ja) | 2017-04-27 |
US20170241021A1 (en) | 2017-08-24 |
TWI582822B (zh) | 2017-05-11 |
EP3214906B1 (en) | 2020-12-09 |
US11466366B2 (en) | 2022-10-11 |
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