JP6208850B2 - 電子デバイスおよびそのパッシベーション方法 - Google Patents
電子デバイスおよびそのパッシベーション方法 Download PDFInfo
- Publication number
- JP6208850B2 JP6208850B2 JP2016512257A JP2016512257A JP6208850B2 JP 6208850 B2 JP6208850 B2 JP 6208850B2 JP 2016512257 A JP2016512257 A JP 2016512257A JP 2016512257 A JP2016512257 A JP 2016512257A JP 6208850 B2 JP6208850 B2 JP 6208850B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electronic device
- passivation
- surface pores
- liquid passivation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002161 passivation Methods 0.000 title claims description 78
- 238000000034 method Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims description 86
- 239000011148 porous material Substances 0.000 claims description 69
- 239000007788 liquid Substances 0.000 claims description 65
- 238000004519 manufacturing process Methods 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 7
- 239000008151 electrolyte solution Substances 0.000 claims description 6
- 230000004907 flux Effects 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 3
- 239000002585 base Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 3
- 239000012454 non-polar solvent Substances 0.000 claims description 3
- 238000011282 treatment Methods 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 9
- 239000003518 caustics Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000008595 infiltration Effects 0.000 description 7
- 238000001764 infiltration Methods 0.000 description 7
- 238000001035 drying Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GIYXAJPCNFJEHY-UHFFFAOYSA-N N-methyl-3-phenyl-3-[4-(trifluoromethyl)phenoxy]-1-propanamine hydrochloride (1:1) Chemical compound Cl.C=1C=CC=CC=1C(CCNC)OC1=CC=C(C(F)(F)F)C=C1 GIYXAJPCNFJEHY-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000004064 dysfunction Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000005246 galvanizing Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012442 inert solvent Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011814 protection agent Substances 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/102—Varistor boundary, e.g. surface layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
- H01G4/22—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 impregnated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/248—Terminals the terminals embracing or surrounding the capacitive element, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/02—Forming enclosures or casings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
- H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Capacitors (AREA)
- Thermistors And Varistors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Description
有利な実施形態および変形実施例は従属請求項に示されている。
これらの表面細孔の中に、液体パッシベーション(Passivierungsflussigkeit)が配設されている。
2 : 表面細孔
3 : 液体パッシベーション
4 : 外部電極
5 : 内部電極
6 : 表面領域
7 : 表面
100 : 電子デバイス
Claims (15)
- 1つの基体(1)を有する電子デバイス(100)であって、
前記基体(1)は当該基体の1つの表面(7)に数nmの領域の直径を有する複数の表面細孔(2)を有する多孔質材料を含み、
前記表面細孔(2)の中には、液体パッシベーション(3)が持続的に配設されている、
ことを特徴とする電子デバイス。 - 前記基体(1)の前記表面(7)は、前記液体パッシベーション(3)でパッシベーションされていることを特徴とする、請求項1に記載の電子デバイス。
- 前記基体(1)は、セラミックを含むことを特徴とする、請求項1または2に記載の電子デバイス。
- 前記基体(1)の、前記表面細孔(2)間の表面領域(6)には、前記液体パッシベーション(3)が存在しないことを特徴とする、請求項1乃至3のいずれか1項に記載の電子デバイス。
- 前記表面細孔(2)の中に配設された前記液体パッシベーション(3)は、異物質、たとえばニッケルおよび/または錫を含む電解質溶液,ナトリウム溶液またはカリウム溶液のようなアルカリを含むはんだフラックス剤および/またはエッチング保護剤が前記表面細孔(2)から前記基体(1)の中に侵入することを防止または阻害することを特徴とする、請求項1乃至4のいずれか1項に記載の電子デバイス。
- 前記液体パッシベーション(3)は、不活性溶液、たとえば脱イオン化された水または無極性溶媒を含むことを特徴とする、請求項1乃至5のいずれか1項に記載の電子デバイス。
- 前記液体パッシベーション(3)は、10〜1000kΩcmの電気比抵抗を備えることを特徴とする、請求項1乃至6のいずれか1項に記載の電子デバイス。
- 前記基体(1)の中に内部電極(複数)(5)が配設されており、当該内部電極(5)は、電気的に互いに分離されていることを特徴とする、請求項1乃至7のいずれか1項に記載の電子デバイス。
- 前記基体(1)には外部電極(複数)(4)が設けられており、当該外部電極(4)は、電気的に互いに分離されており、かつ各々の外部電極(4)は、複数の内部電極(5)と電気的に導通して結合されていることを特徴とする、請求項1乃至8のいずれか1項に記載の電子デバイス。
- 前記電子デバイスは、たとえばバリスタ,圧電デバイス,またはコンデンサであることを特徴とする、請求項1乃至9のいずれか1項に記載の電子デバイス。
- 多孔質材料からなる1つの基体(1)をパッシベーションするための方法であって、
前記基体(1)を準備するステップと、
前記基体(1)の多孔質材料の数nmの領域の直径を有する複数の表面細孔(2)を、液体パッシベーション(3)に曝露するステップであって、当該液体パッシベーション(3)は、当該表面細孔(2)の中に浸入しそこに持続的に留まることを特徴とする方法。 - 前記表面細孔(2)は、外部からの圧力の印加無しに、環境気圧の条件下で前記液体パッシベーション(3)に曝露されることを特徴とする、請求項11に記載の方法。
- 前記表面細孔(2)は、室温で前記液体パッシベーション(3)に曝露されることを特徴とする、請求項11または12に記載の方法。
- 電子デバイス(100)を製造するための方法であって、
前記電子デバイスの1つの基体(1)のために提供されたグリーン体を、この基体(1)を形成するために焼結するステップであって、当該グリーン体が、焼結される多孔質材料を含むステップと、
前記基体(1)に1つの外部電極(4)を設けるステップと、
前記外部電極(4)が設けられた多孔質の基体(1)を、請求項11乃至13のいずれか1項に記載の方法によりパッシベーションするステップと、
前記外部電極が設けられた基体(1)を電気めっき処理するステップと、
を備えることを特徴とする方法。 - 前記外部電極が設けられた基体(1)の前記電気めっき処理は、たとえばニッケルおよび亜鉛を含有する電解質溶液で行われることを特徴とする、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013104621.5 | 2013-05-06 | ||
DE201310104621 DE102013104621A1 (de) | 2013-05-06 | 2013-05-06 | Elektronisches Bauelement und Verfahren zu dessen Passivierung |
PCT/EP2014/056832 WO2014180608A1 (de) | 2013-05-06 | 2014-04-04 | Elektronisches bauelement und verfahren zu dessen passivierung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016524813A JP2016524813A (ja) | 2016-08-18 |
JP6208850B2 true JP6208850B2 (ja) | 2017-10-04 |
Family
ID=50473290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016512257A Active JP6208850B2 (ja) | 2013-05-06 | 2014-04-04 | 電子デバイスおよびそのパッシベーション方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9734948B2 (ja) |
EP (1) | EP2994934B1 (ja) |
JP (1) | JP6208850B2 (ja) |
DE (1) | DE102013104621A1 (ja) |
WO (1) | WO2014180608A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015210797B4 (de) * | 2015-06-12 | 2019-03-28 | Continental Automotive Gmbh | Verfahren zur Herstellung eines piezoelektrischen Schichtstapels |
FR3062799B1 (fr) | 2017-02-10 | 2021-09-10 | Starklab | Dispositif pour la production et le traitement de flux gazeux a travers un volume de liquide regule automatiquement |
JP7431798B2 (ja) | 2018-07-18 | 2024-02-15 | キョーセラ・エイブイエックス・コンポーネンツ・コーポレーション | バリスタパッシベーション層及びその製造方法 |
KR20220087974A (ko) * | 2020-12-18 | 2022-06-27 | 삼성전기주식회사 | 전자 부품 및 그 제조 방법 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4963396A (en) | 1989-02-23 | 1990-10-16 | Toshiba Ceramics Co., Ltd. | Method for making an impregnated ceramic material |
US5346722A (en) * | 1993-05-18 | 1994-09-13 | Corning Incorporated | Method for improving the thermal shock resistance of a washcoated body |
AU6704398A (en) * | 1997-03-19 | 1998-10-12 | Biosepra Inc. | Multifunctional ceramic particles as solid supports for solid phase and com binatorial solid phase synthesis |
JPH10265277A (ja) * | 1997-03-27 | 1998-10-06 | Sumitomo Metal Ind Ltd | 多孔質炭化ケイ素焼結体およびその製造方法 |
DE29904858U1 (de) | 1999-03-17 | 1999-07-22 | VTI Thüringer Verfahrenstechnisches Institut für Umwelt und Energie e.V., 07318 Saalfeld | Vorrichtung zur Meßwerterfassung im Hochtemperaturbereich |
JP2001131756A (ja) * | 1999-11-01 | 2001-05-15 | Toyota Central Res & Dev Lab Inc | 多孔体表面への無電解メッキ方法 |
US20040132900A1 (en) * | 2003-01-08 | 2004-07-08 | International Business Machines Corporation | Polyimide compositions and use thereof in ceramic product defect repair |
JP4461815B2 (ja) * | 2003-07-16 | 2010-05-12 | 株式会社村田製作所 | 積層セラミック電子部品の製造方法 |
KR100568306B1 (ko) * | 2004-07-23 | 2006-04-05 | 삼성전기주식회사 | 박막형 다층 세라믹 캐패시터 및 그 제조방법 |
JP5038950B2 (ja) * | 2007-07-24 | 2012-10-03 | Tdk株式会社 | 積層電子部品およびその製造方法 |
JP4687757B2 (ja) | 2008-07-22 | 2011-05-25 | 株式会社村田製作所 | 積層セラミック電子部品の製造方法 |
JP5304800B2 (ja) | 2008-12-26 | 2013-10-02 | 株式会社村田製作所 | セラミック電子部品の製造方法およびセラミック電子部品 |
JP2012134413A (ja) | 2010-12-24 | 2012-07-12 | Murata Mfg Co Ltd | 積層型電子部品およびその製造方法 |
US8889776B2 (en) * | 2011-03-23 | 2014-11-18 | The Curators Of The University Of Missouri | High dielectric constant composite materials and methods of manufacture |
-
2013
- 2013-05-06 DE DE201310104621 patent/DE102013104621A1/de active Pending
-
2014
- 2014-04-04 EP EP14716279.6A patent/EP2994934B1/de active Active
- 2014-04-04 JP JP2016512257A patent/JP6208850B2/ja active Active
- 2014-04-04 US US14/785,753 patent/US9734948B2/en active Active
- 2014-04-04 WO PCT/EP2014/056832 patent/WO2014180608A1/de active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP2994934A1 (de) | 2016-03-16 |
JP2016524813A (ja) | 2016-08-18 |
US20160071648A1 (en) | 2016-03-10 |
DE102013104621A1 (de) | 2014-11-06 |
WO2014180608A1 (de) | 2014-11-13 |
US9734948B2 (en) | 2017-08-15 |
EP2994934B1 (de) | 2020-10-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6208850B2 (ja) | 電子デバイスおよびそのパッシベーション方法 | |
KR101996356B1 (ko) | 세라믹 전자부품 | |
US6771483B2 (en) | Electrostatic chuck member and method of producing the same | |
KR101721628B1 (ko) | 세라믹 전자 부품 및 그 제조 방법 | |
JP5236927B2 (ja) | 耐腐食性積層セラミックス部材 | |
JP5340350B2 (ja) | 電気部品及びその製造方法 | |
JP6274045B2 (ja) | セラミック電子部品およびその製造方法 | |
CN102290239A (zh) | 陶瓷电子元件的制造方法 | |
JP2015115392A (ja) | 積層型セラミック電子部品およびその製造方法 | |
KR20140009208A (ko) | 열전 모듈 및 이의 제조 방법 | |
JP2012220293A (ja) | ガスセンサ素子とその製造方法並びにガスセンサ | |
JP2007234774A (ja) | セラミック電子部品及びその製造方法 | |
JP6335436B2 (ja) | 液体吐出ヘッドの製造方法 | |
KR102127802B1 (ko) | 적층형 전자 부품 | |
JP7378210B2 (ja) | セラミック部材の製造方法 | |
JPH0696986A (ja) | 積層セラミックコンデンサ並びにその製造方法 | |
JP2007234654A (ja) | セラミック電子部品及びその製造方法 | |
JP2016076603A (ja) | 金属−セラミックス回路基板およびその製造方法 | |
JP2022530121A (ja) | セラミック絶縁体を有する電気機械アクチュエータおよびその製造方法 | |
TWI841666B (zh) | 複合生片、陶瓷構件、複合生片的製造方法及陶瓷構件的製造方法 | |
JP4742638B2 (ja) | 拡散防止膜付積層体 | |
JP2018526823A (ja) | 耐湿保護層 | |
JP6873058B2 (ja) | 基板を保持するための装置 | |
JP4556312B2 (ja) | セラミック積層電子部品およびその製造方法 | |
JP2005086073A (ja) | セラミック電子部品の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170201 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20170428 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170613 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170705 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170724 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170809 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170907 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6208850 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |