JP6202208B2 - パワー半導体素子の電流検出装置 - Google Patents
パワー半導体素子の電流検出装置 Download PDFInfo
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- JP6202208B2 JP6202208B2 JP2016531168A JP2016531168A JP6202208B2 JP 6202208 B2 JP6202208 B2 JP 6202208B2 JP 2016531168 A JP2016531168 A JP 2016531168A JP 2016531168 A JP2016531168 A JP 2016531168A JP 6202208 B2 JP6202208 B2 JP 6202208B2
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- 239000004065 semiconductor Substances 0.000 title claims description 46
- 238000001514 detection method Methods 0.000 title claims description 39
- 238000010586 diagram Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000007257 malfunction Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R17/00—Measuring arrangements involving comparison with a reference value, e.g. bridge
- G01R17/10—AC or DC measuring bridges
- G01R17/16—AC or DC measuring bridges with discharge tubes or semiconductor devices in one or more arms of the bridge, e.g. voltmeter using a difference amplifier
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08128—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in composite switches
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/40—Testing power supplies
- G01R31/42—AC power supplies
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0009—Devices or circuits for detecting current in a converter
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Conversion In General (AREA)
Description
この回路図において、ここでは、電力変換装置のパワー半導体素子100として、IGBT(Insulated Gate Bipolar Transistor:絶縁ゲート型バイポーラトランジスタ)の場合を例にしている。なお、パワー半導体素子100としては、図示のIGBTに限定されるものではなく、絶縁ゲート型電界効果トランジスタのような他の絶縁ゲート型半導体素子でも構わない。
図3はパワー半導体素子および従来の第2の電流検出回路を示す回路図である。なお、図3において、図2に記載のものと同一または同等の構成要素については、同じ符号を付してある。
図1は本発明の実施の形態に係るパワー半導体素子の電流検出装置の一構成例を示す回路図である。
11 IGBT
12 センスIGBT
13 ゲート端子
14 コレクタ端子
15 IGBTのエミッタ端子
16 センスIGBTのエミッタ端子
17 グランド
20 演算増幅器
21 非反転入力端子
22 反転入力端子
23 出力端子
24,26,27,28,31 PMOSトランジスタ
25 電流源
29,30,32,41 NMOSトランジスタ
33 容量
34,42 抵抗
40 電流電圧変換器
43 出力端子
50 基準電源
60 電源
Claims (4)
- 主電流が流れるメイン素子と前記メイン素子の電流を検出する電流センス素子とを具備したパワー半導体素子の電流検出装置において、
所定の基準電圧を出力する基準電源と、
非反転入力端子に前記基準電圧を印加し、反転入力端子を出力端子および前記電流センス素子の電流出力端子に接続した演算増幅器と、
前記演算増幅器の出力段を構成するデバイスに流れる電流の比例倍の電流を流すよう構成したトランジスタおよび前記トランジスタに流れる電流を電圧に変換する抵抗を有し、前記トランジスタと前記抵抗との接続点から前記パワー半導体素子の検出電流に相当する電圧を出力する電流電圧変換器と、
を備え、
前記基準電源、前記演算増幅器および前記電流電圧変換器は、グランドの電位を基準に動作するよう構成されていることを特徴とするパワー半導体素子の電流検出装置。
- 前記演算増幅器の出力段は、ハイサイドに電流源を配置し、ローサイドに出力段の電流を調整する前記デバイスを配置してA級増幅器を構成し、前記電流源と前記デバイスとの接続点を前記出力端子としたことを特徴とする請求項1記載のパワー半導体素子の電流検出装置。
- 前記基準電源は、前記基準電圧が1ボルト以下の電圧に設定されていることを特徴とする請求項1または2に記載のパワー半導体素子の電流検出装置。
- 前記パワー半導体素子は、絶縁ゲート型バイポーラトランジスタであることを特徴とする請求項1ないし3のいずれか1項に記載のパワー半導体素子の電流検出装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014134870 | 2014-06-30 | ||
JP2014134870 | 2014-06-30 | ||
PCT/JP2015/063028 WO2016002329A1 (ja) | 2014-06-30 | 2015-04-30 | パワー半導体素子の電流検出装置 |
Publications (2)
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JPWO2016002329A1 JPWO2016002329A1 (ja) | 2017-04-27 |
JP6202208B2 true JP6202208B2 (ja) | 2017-09-27 |
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JP2016531168A Active JP6202208B2 (ja) | 2014-06-30 | 2015-04-30 | パワー半導体素子の電流検出装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10680509B2 (ja) |
JP (1) | JP6202208B2 (ja) |
CN (1) | CN105874690B (ja) |
WO (1) | WO2016002329A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7026531B2 (ja) * | 2018-02-23 | 2022-02-28 | ルネサスエレクトロニクス株式会社 | 半導体装置、半導体システム、及び、制御システム |
CN115932379B (zh) * | 2022-12-27 | 2023-08-08 | 希荻微电子集团股份有限公司 | 高边电流检测电路、过流保护电路、校准方法及电子设备 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4219567B2 (ja) * | 2001-04-03 | 2009-02-04 | 三菱電機株式会社 | 半導体装置 |
JP3703435B2 (ja) * | 2002-02-05 | 2005-10-05 | 三菱電機株式会社 | 半導体装置 |
JP3681374B2 (ja) * | 2002-12-19 | 2005-08-10 | 株式会社日立製作所 | 電流検出装置及びそれを用いたpwmインバータ |
JP4237174B2 (ja) * | 2005-10-31 | 2009-03-11 | Necエレクトロニクス株式会社 | 演算増幅器、積分回路、帰還増幅器及び帰還増幅器の制御方法 |
JP4585454B2 (ja) * | 2006-01-11 | 2010-11-24 | ルネサスエレクトロニクス株式会社 | スイッチング電源装置 |
JP4905208B2 (ja) * | 2006-10-25 | 2012-03-28 | 株式会社デンソー | 過電流検出回路 |
JP5170208B2 (ja) * | 2010-10-22 | 2013-03-27 | 富士電機株式会社 | パワー半導体デバイスの電流検出回路 |
US8766671B2 (en) * | 2010-11-22 | 2014-07-01 | Denso Corporation | Load driving apparatus |
JP5627512B2 (ja) | 2011-03-04 | 2014-11-19 | 三菱電機株式会社 | パワーモジュール |
JP5664536B2 (ja) | 2011-12-19 | 2015-02-04 | 株式会社デンソー | 電流検出回路および半導体集積回路装置 |
JP5915232B2 (ja) * | 2012-02-14 | 2016-05-11 | 株式会社デンソー | スイッチング素子の制御回路及びスイッチング素子の制御方法 |
JP6089599B2 (ja) * | 2012-11-01 | 2017-03-08 | 富士電機株式会社 | 絶縁ゲート型半導体素子の駆動装置 |
US9791480B2 (en) * | 2013-05-21 | 2017-10-17 | Analog Devices Global | Current sensing of switching power regulators |
DE102014202611A1 (de) * | 2014-02-13 | 2015-08-13 | Robert Bosch Gmbh | Schaltungsanordnung und Verfahren zur Strommessung |
-
2015
- 2015-04-30 CN CN201580003577.0A patent/CN105874690B/zh active Active
- 2015-04-30 WO PCT/JP2015/063028 patent/WO2016002329A1/ja active Application Filing
- 2015-04-30 JP JP2016531168A patent/JP6202208B2/ja active Active
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2016
- 2016-06-30 US US15/198,880 patent/US10680509B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20160315531A1 (en) | 2016-10-27 |
CN105874690B (zh) | 2018-11-09 |
JPWO2016002329A1 (ja) | 2017-04-27 |
US10680509B2 (en) | 2020-06-09 |
CN105874690A (zh) | 2016-08-17 |
WO2016002329A1 (ja) | 2016-01-07 |
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