JP6200018B2 - 炭化珪素単結晶ウェハ - Google Patents

炭化珪素単結晶ウェハ Download PDF

Info

Publication number
JP6200018B2
JP6200018B2 JP2016050574A JP2016050574A JP6200018B2 JP 6200018 B2 JP6200018 B2 JP 6200018B2 JP 2016050574 A JP2016050574 A JP 2016050574A JP 2016050574 A JP2016050574 A JP 2016050574A JP 6200018 B2 JP6200018 B2 JP 6200018B2
Authority
JP
Japan
Prior art keywords
single crystal
wafer
growth
crystal
ingot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016050574A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016164120A5 (enrdf_load_stackoverflow
JP2016164120A (ja
Inventor
正史 中林
正史 中林
光太 下村
光太 下村
幸雄 永畑
幸雄 永畑
小島 清
清 小島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Chemical and Materials Co Ltd
Original Assignee
Nippon Steel and Sumikin Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel and Sumikin Materials Co Ltd filed Critical Nippon Steel and Sumikin Materials Co Ltd
Priority to JP2016050574A priority Critical patent/JP6200018B2/ja
Publication of JP2016164120A publication Critical patent/JP2016164120A/ja
Publication of JP2016164120A5 publication Critical patent/JP2016164120A5/ja
Application granted granted Critical
Publication of JP6200018B2 publication Critical patent/JP6200018B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP2016050574A 2016-03-15 2016-03-15 炭化珪素単結晶ウェハ Active JP6200018B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016050574A JP6200018B2 (ja) 2016-03-15 2016-03-15 炭化珪素単結晶ウェハ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016050574A JP6200018B2 (ja) 2016-03-15 2016-03-15 炭化珪素単結晶ウェハ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2013195010A Division JP5931825B2 (ja) 2013-09-20 2013-09-20 炭化珪素単結晶インゴットの製造方法

Publications (3)

Publication Number Publication Date
JP2016164120A JP2016164120A (ja) 2016-09-08
JP2016164120A5 JP2016164120A5 (enrdf_load_stackoverflow) 2016-10-20
JP6200018B2 true JP6200018B2 (ja) 2017-09-20

Family

ID=56876408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016050574A Active JP6200018B2 (ja) 2016-03-15 2016-03-15 炭化珪素単結晶ウェハ

Country Status (1)

Country Link
JP (1) JP6200018B2 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019167337A1 (ja) 2018-03-01 2019-09-06 住友電気工業株式会社 炭化珪素基板
CN110747504B (zh) * 2019-11-26 2021-03-23 中国科学院物理研究所 一种碳化硅单晶的生长方法
CN113322520A (zh) * 2020-02-28 2021-08-31 Skc株式会社 晶片及其制造方法
KR102195325B1 (ko) 2020-06-16 2020-12-24 에스케이씨 주식회사 탄화규소 잉곳, 웨이퍼 및 이의 제조방법
CN114540954B (zh) * 2020-11-25 2022-12-09 北京天科合达半导体股份有限公司 碳化硅单晶片、晶体及制备方法、半导体器件
KR20240072094A (ko) 2021-09-30 2024-05-23 샌트랄 글래스 컴퍼니 리미티드 탄화규소 단결정 웨이퍼, 탄화규소 단결정 잉곳 및 탄화규소 단결정의 제조방법
US12325934B2 (en) 2021-09-30 2025-06-10 Central Glass Company, Limited Single-crystal silicon carbide wafer, and single-crystal silicon carbide ingot
JPWO2024080071A1 (enrdf_load_stackoverflow) * 2022-10-11 2024-04-18
CN116334748B (zh) * 2023-03-21 2024-12-10 浙江材孜科技有限公司 一种降低碳化硅晶体应力的生长方法
WO2025121062A1 (ja) * 2023-12-08 2025-06-12 住友電気工業株式会社 炭化珪素基板、エピタキシャル基板および半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5304712B2 (ja) * 2010-04-07 2013-10-02 新日鐵住金株式会社 炭化珪素単結晶ウェハ
JP5614387B2 (ja) * 2011-08-29 2014-10-29 新日鐵住金株式会社 炭化珪素単結晶の製造方法、及び炭化珪素単結晶インゴット
WO2013031856A1 (ja) * 2011-08-29 2013-03-07 新日鐵住金株式会社 炭化珪素単結晶基板及びその製造方法

Also Published As

Publication number Publication date
JP2016164120A (ja) 2016-09-08

Similar Documents

Publication Publication Date Title
JP5931825B2 (ja) 炭化珪素単結晶インゴットの製造方法
JP6200018B2 (ja) 炭化珪素単結晶ウェハ
KR102160863B1 (ko) 탄화규소 단결정 웨이퍼
WO2017057742A1 (ja) SiC単結晶インゴット
JP4388538B2 (ja) 炭化珪素単結晶製造装置
KR101379941B1 (ko) 탄화규소 단결정 및 탄화규소 단결정 웨이퍼
JP5304712B2 (ja) 炭化珪素単結晶ウェハ
JP4926556B2 (ja) 炭化珪素単結晶インゴットの製造方法及び炭化珪素単結晶基板
KR100773624B1 (ko) 탄화 규소 단결정으로 이루어지는 종결정 및 그를 이용한잉곳의 제조 방법
US20190024257A1 (en) Silicon carbide single crystal substrate and process for producing same
US10344396B2 (en) Furnace for seeded sublimation of wide band gap crystals
TWI767309B (zh) 碳化矽晶錠之製造方法以及製造碳化矽晶錠之系統
JP7161784B2 (ja) 炭化珪素インゴット、ウエハ及びその製造方法
JP2004099340A (ja) 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法
JP5614387B2 (ja) 炭化珪素単結晶の製造方法、及び炭化珪素単結晶インゴット
JP4585359B2 (ja) 炭化珪素単結晶の製造方法
JP2018168052A (ja) 炭化珪素単結晶インゴットの製造方法
JP5131262B2 (ja) 炭化珪素単結晶及びその製造方法
JP4157326B2 (ja) 4h型炭化珪素単結晶インゴット及びウエハ
JP6594148B2 (ja) 炭化珪素単結晶インゴット
JP2003137694A (ja) 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法
JP4160769B2 (ja) 炭化珪素単結晶インゴット及びウエハ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160830

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160830

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170511

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170523

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170609

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170801

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170824

R150 Certificate of patent or registration of utility model

Ref document number: 6200018

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350